+

WO2009031677A1 - 半導体装置 - Google Patents

半導体装置 Download PDF

Info

Publication number
WO2009031677A1
WO2009031677A1 PCT/JP2008/066164 JP2008066164W WO2009031677A1 WO 2009031677 A1 WO2009031677 A1 WO 2009031677A1 JP 2008066164 W JP2008066164 W JP 2008066164W WO 2009031677 A1 WO2009031677 A1 WO 2009031677A1
Authority
WO
WIPO (PCT)
Prior art keywords
layer side
magnetoresistive element
magnetoresistive
free layer
pinned layer
Prior art date
Application number
PCT/JP2008/066164
Other languages
English (en)
French (fr)
Inventor
Yasuhiro Taniguchi
Kosuke Okuyama
Original Assignee
Renesas Technology Corp.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Technology Corp. filed Critical Renesas Technology Corp.
Priority to US12/676,387 priority Critical patent/US20100188891A1/en
Priority to JP2009531302A priority patent/JPWO2009031677A1/ja
Publication of WO2009031677A1 publication Critical patent/WO2009031677A1/ja

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C14/00—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
    • G11C14/0054—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down in which the volatile element is a SRAM cell
    • G11C14/0081—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down in which the volatile element is a SRAM cell and the nonvolatile element is a magnetic RAM [MRAM] element or ferromagnetic cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1659—Cell access
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1673—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1677—Verifying circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1051—Data output circuits, e.g. read-out amplifiers, data output buffers, data output registers, data output level conversion circuits
    • G11C7/106—Data output latches

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)

Abstract

　記憶データの信頼性を向上させる。 　第１磁気抵抗素子（２０３）及び第２磁気抵抗素子（２０４）を設ける。上記第１磁気抵抗素子及び上記第２磁気抵抗素子は、スピンの向きを変更可能なフリー層と、スピンの向きが固定されたピン層とを含む。上記第１磁気抵抗素子は、フリー層側が第１トランジスタ（２０５）に結合され、ピン層側が第１電源端子（２０７）に結合される。上記第２磁気抵抗素子は、フリー層側が第２トランジスタ（２０６）に結合され、ピン層側が第１電源端子（２０７）に結合される。磁気抵抗メモリセルにおける不所望な抵抗状態変化を阻止することによって記憶データの信頼性を向上させる。
PCT/JP2008/066164 2007-09-07 2008-09-08 半導体装置 WO2009031677A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US12/676,387 US20100188891A1 (en) 2007-09-07 2008-09-08 Semiconductor device
JP2009531302A JPWO2009031677A1 (ja) 2007-09-07 2008-09-08 半導体装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
PCT/JP2007/067472 WO2009031231A1 (ja) 2007-09-07 2007-09-07 半導体装置
JPPCT/JP2007/067472 2007-09-07

Publications (1)

Publication Number Publication Date
WO2009031677A1 true WO2009031677A1 (ja) 2009-03-12

Family

ID=40428554

Family Applications (2)

Application Number Title Priority Date Filing Date
PCT/JP2007/067472 WO2009031231A1 (ja) 2007-09-07 2007-09-07 半導体装置
PCT/JP2008/066164 WO2009031677A1 (ja) 2007-09-07 2008-09-08 半導体装置

Family Applications Before (1)

Application Number Title Priority Date Filing Date
PCT/JP2007/067472 WO2009031231A1 (ja) 2007-09-07 2007-09-07 半導体装置

Country Status (3)

Country Link
US (1) US20100188891A1 (ja)
JP (1) JPWO2009031677A1 (ja)
WO (2) WO2009031231A1 (ja)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010279035A (ja) * 2009-05-26 2010-12-09 Crocus Technology Sa 磁気トンネル接合を使用する不揮発性論理装置
JP2011211148A (ja) * 2010-03-08 2011-10-20 Toshiba Corp 半導体記憶装置
JP2013062319A (ja) * 2011-09-12 2013-04-04 Tohoku Univ 半導体記憶装置
KR101363656B1 (ko) * 2011-07-28 2014-02-14 가부시끼가이샤 도시바 반도체 집적 회로 및 프로세서
JP2018101456A (ja) * 2016-12-16 2018-06-28 学校法人 芝浦工業大学 半導体装置
JP7532730B2 (ja) 2021-10-04 2024-08-14 インベンション アンド コラボレーション ラボラトリー プライベート リミテッド Ｓｒａｍセル構造

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8421164B2 (en) * 2010-01-05 2013-04-16 Micron Technology, Inc. Memory cell array with semiconductor selection device for multiple memory cells
FR2970593B1 (fr) * 2011-01-19 2013-08-02 Centre Nat Rech Scient Cellule mémoire volatile/non volatile compacte
FR2970589B1 (fr) 2011-01-19 2013-02-15 Centre Nat Rech Scient Cellule mémoire volatile/non volatile
FR2970592B1 (fr) 2011-01-19 2013-02-15 Centre Nat Rech Scient Cellule mémoire volatile/non volatile programmable
FR2976711B1 (fr) * 2011-06-15 2014-01-31 Centre Nat Rech Scient Cellule memoire avec memorisation volatile et non volatile
JP2013125513A (ja) * 2011-12-16 2013-06-24 Samsung Electronics Co Ltd 不揮発性半導体記憶装置及びその管理方法
JP5480321B2 (ja) * 2012-03-21 2014-04-23 株式会社東芝 磁気メモリ及びその製造方法
FR2990089B1 (fr) * 2012-04-27 2014-04-11 Commissariat Energie Atomique Dispositif logique reprogrammable resistant aux rayonnements.
JP5814867B2 (ja) * 2012-06-27 2015-11-17 株式会社東芝 半導体記憶装置
WO2014022304A1 (en) * 2012-07-30 2014-02-06 The Regents Of The University Of California Multiple-bits-per-cell voltage-controlled magnetic memory
WO2014104131A1 (ja) * 2012-12-28 2014-07-03 国立大学法人東北大学 記憶装置、メモリセル及びデータ書き込み方法
FR3004576B1 (fr) 2013-04-15 2019-11-29 Commissariat A L'energie Atomique Et Aux Energies Alternatives Cellule memoire avec memorisation de donnees non volatile
FR3004577A1 (ja) 2013-04-15 2014-10-17 Commissariat Energie Atomique
FR3008219B1 (fr) 2013-07-05 2016-12-09 Commissariat Energie Atomique Dispositif a memoire non volatile
JP6146178B2 (ja) * 2013-07-12 2017-06-14 凸版印刷株式会社 不揮発性メモリ
WO2015041305A1 (ja) * 2013-09-20 2015-03-26 国立大学法人東北大学 メモリセル及び記憶装置
US9691471B2 (en) 2014-09-15 2017-06-27 Taiwan Semiconductor Manufacturing Company, Ltd. SRAM cells with vertical gate-all-round MOSFETs
KR20170051039A (ko) * 2015-11-02 2017-05-11 에스케이하이닉스 주식회사 반도체 장치 및 그 구동 방법
CN110544499B (zh) * 2018-05-28 2021-07-13 联华电子股份有限公司 静态随机存取存储器结构
US11152067B2 (en) * 2018-08-30 2021-10-19 Sandisk Technologies Llc Content addressable memory with spin-orbit torque devices
JP2020187811A (ja) * 2019-05-15 2020-11-19 キオクシア株式会社 半導体記憶装置
US11107530B2 (en) 2019-12-31 2021-08-31 Taiwan Semiconductor Manufacturing Company Limited Non-volatile static random access memory (nvSRAM) with multiple magnetic tunnel junction cells
US11404424B2 (en) * 2020-04-28 2022-08-02 Taiwan Semiconductor Manufacturing Company Limited Static random access memory with magnetic tunnel junction cells
TWI770950B (zh) 2020-04-28 2022-07-11 台灣積體電路製造股份有限公司 記憶體單元、記憶體系統與記憶體單元的操作方法
TWI805219B (zh) * 2022-02-10 2023-06-11 力晶積成電子製造股份有限公司 非揮發性靜態隨機存取記憶體

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002216468A (ja) * 2000-11-08 2002-08-02 Canon Inc 半導体記憶装置
WO2003105156A1 (ja) * 2002-06-05 2003-12-18 松下電器産業株式会社 不揮発性メモリ回路及びその駆動方法並びにそのメモリ回路を用いた半導体装置
JP2007052879A (ja) * 2005-08-19 2007-03-01 Sony Corp 不揮発性メモリセルおよび記憶装置と不揮発性論理回路
JP2007134027A (ja) * 2005-10-13 2007-05-31 Renesas Technology Corp 不揮発性記憶装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4751677A (en) * 1986-09-16 1988-06-14 Honeywell Inc. Differential arrangement magnetic memory cell
US6269027B1 (en) * 1998-04-14 2001-07-31 Honeywell, Inc. Non-volatile storage latch
KR100479810B1 (ko) * 2002-12-30 2005-03-31 주식회사 하이닉스반도체 불휘발성 메모리 장치
US7599210B2 (en) * 2005-08-19 2009-10-06 Sony Corporation Nonvolatile memory cell, storage device and nonvolatile logic circuit
JP4760225B2 (ja) * 2005-08-26 2011-08-31 ソニー株式会社 記憶装置
US7646627B2 (en) * 2006-05-18 2010-01-12 Renesas Technology Corp. Magnetic random access memory having improved read disturb suppression and thermal disturbance resistance

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002216468A (ja) * 2000-11-08 2002-08-02 Canon Inc 半導体記憶装置
WO2003105156A1 (ja) * 2002-06-05 2003-12-18 松下電器産業株式会社 不揮発性メモリ回路及びその駆動方法並びにそのメモリ回路を用いた半導体装置
JP2007052879A (ja) * 2005-08-19 2007-03-01 Sony Corp 不揮発性メモリセルおよび記憶装置と不揮発性論理回路
JP2007134027A (ja) * 2005-10-13 2007-05-31 Renesas Technology Corp 不揮発性記憶装置

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010279035A (ja) * 2009-05-26 2010-12-09 Crocus Technology Sa 磁気トンネル接合を使用する不揮発性論理装置
JP2011211148A (ja) * 2010-03-08 2011-10-20 Toshiba Corp 半導体記憶装置
KR101363656B1 (ko) * 2011-07-28 2014-02-14 가부시끼가이샤 도시바 반도체 집적 회로 및 프로세서
JP2013062319A (ja) * 2011-09-12 2013-04-04 Tohoku Univ 半導体記憶装置
JP2018101456A (ja) * 2016-12-16 2018-06-28 学校法人 芝浦工業大学 半導体装置
JP7007173B2 (ja) 2016-12-16 2022-01-24 ソニーセミコンダクタソリューションズ株式会社 半導体装置
JP7532730B2 (ja) 2021-10-04 2024-08-14 インベンション アンド コラボレーション ラボラトリー プライベート リミテッド Ｓｒａｍセル構造

Also Published As

Publication number Publication date
US20100188891A1 (en) 2010-07-29
JPWO2009031677A1 (ja) 2010-12-16
WO2009031231A1 (ja) 2009-03-12

Similar Documents

Publication Publication Date Title
WO2009031677A1 (ja) 半導体装置
TW200802365A (en) Semiconductor device
MX2010006978A (es) Dispositivo de mram con linea fuente compartida.
WO2006113205A3 (en) Aryl-ethylene substituted aromatic compounds and their use as organic semiconductors
WO2008126166A1 (ja) 不揮発性半導体記憶装置及びその読み出し方法
WO2007100626A3 (en) Current driven memory cells having enhanced current and enhanced current symmetry
TW200713263A (en) Magnetic elements having improved switching characteristics and magnetic memory devices using the magnetic elements
TW200723275A (en) Nonvolatile memory device
WO2007117392A3 (en) On-plug magnetic tunnel junction devices based on spin torque transfer switching
TW200739580A (en) Nonvolatile semiconductor memory device
WO2007014117A3 (en) Non-volatile memory
WO2008099863A1 (ja) 半導体，半導体装置及び相補型トランジスタ回路装置
WO2008100869A3 (en) Non-volatile magnetic memory with low switching current and high thermal stablity
EP2782100A3 (en) Memory to read and write data at a magnetic tunnel junction element
WO2009028298A1 (ja) スピン注入磁化反転ｍｔｊを用いた不揮発性ｓｒａｍ／ラッチ回路
WO2010036210A8 (en) Graphene memory cell and fabrication methods thereof
JP2006148080A5 (ja)
WO2007047311A3 (en) Spin transfer based magnetic storage cells utilizing granular free layers and magnetic memories using such cells
WO2008057371A3 (en) Trap-charge non-volatile switch connector for programmable logic
TW200638422A (en) Magnetic random access memory device
ATE536618T1 (de) Auswahlvorrichtung für einen magnetoresistiven speicher mit spin-transfer
WO2008004179A3 (en) Non-volatile memory and-array and method for operating the game
WO2008114716A1 (ja) Ｓｒａｍ装置
TW200632923A (en) Reduced power magnetoresistive random access memory elements
TW200636974A (en) Semiconductor device and method for controlling operation thereof

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 08829500

Country of ref document: EP

Kind code of ref document: A1

ENP Entry into the national phase

Ref document number: 2009531302

Country of ref document: JP

Kind code of ref document: A

WWE Wipo information: entry into national phase

Ref document number: 12676387

Country of ref document: US

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 08829500

Country of ref document: EP

Kind code of ref document: A1

点击 这是indexloc提供的php浏览器服务，不要输入任何密码和下载