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WO2009031566A1 - 静電チャック装置におけるガス供給構造の製造方法及び静電チャック装置ガス供給構造並びに静電チャック装置 - Google Patents

静電チャック装置におけるガス供給構造の製造方法及び静電チャック装置ガス供給構造並びに静電チャック装置 Download PDF

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Publication number
WO2009031566A1
WO2009031566A1 PCT/JP2008/065836 JP2008065836W WO2009031566A1 WO 2009031566 A1 WO2009031566 A1 WO 2009031566A1 JP 2008065836 W JP2008065836 W JP 2008065836W WO 2009031566 A1 WO2009031566 A1 WO 2009031566A1
Authority
WO
WIPO (PCT)
Prior art keywords
gas supply
electrostatic chuck
metal base
chuck apparatus
insulating layer
Prior art date
Application number
PCT/JP2008/065836
Other languages
English (en)
French (fr)
Inventor
Kinya Miyashita
Yoshihiro Watanabe
Original Assignee
Creative Technology Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Creative Technology Corporation filed Critical Creative Technology Corporation
Priority to JP2009531252A priority Critical patent/JP5186504B2/ja
Priority to CN2008801059611A priority patent/CN101796626B/zh
Priority to US12/676,834 priority patent/US8051548B2/en
Priority to KR1020107007261A priority patent/KR101384585B1/ko
Publication of WO2009031566A1 publication Critical patent/WO2009031566A1/ja
Priority to HK10108654A priority patent/HK1142992A1/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T137/00—Fluid handling
    • Y10T137/8593—Systems
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/49126—Assembling bases
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/4913—Assembling to base an electrical component, e.g., capacitor, etc.

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Jigs For Machine Tools (AREA)

Abstract

　金属基盤（１）の上面側に静電チャックを備えた静電チャック装置において、冷却ガス噴出し量の不均一化や溶射材料等の堆積による汚染化を防ぐことができるガス供給構造の製造方法を提供する。 金属基盤（１）の下面側から供給された冷却ガスを、金属基盤（１）が備えるガス供給経路（３）を通じて上部絶縁層（６）側に吸着させた基板（W）の裏面に供給するためのガス供給構造の製造方法であり、金属基盤（１）の上面側にセラミックス粉末を溶射して下部絶縁層（４）を形成する工程、吸着電極（５）を形成する工程、及び上部絶縁層（６）を形成する工程に先駆けて、下部絶縁層（４）の形成に用いるセラミックス粉末と同じ材料からなる充填材を含んだ接着剤（８）で金属基盤（１）の上面側のガス供給経路出口（３ａ）を塞ぎ、上部絶縁層（６）の形成後に金属基盤（１）のガス供給経路出口（３ａ）に向けて孔を開け、ガス供給経路（３）に通ずる貫通孔（９）を形成するガス供給構造の製造方法である。
PCT/JP2008/065836 2007-09-06 2008-09-03 静電チャック装置におけるガス供給構造の製造方法及び静電チャック装置ガス供給構造並びに静電チャック装置 WO2009031566A1 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2009531252A JP5186504B2 (ja) 2007-09-06 2008-09-03 静電チャック装置におけるガス供給構造の製造方法及び静電チャック装置ガス供給構造並びに静電チャック装置
CN2008801059611A CN101796626B (zh) 2007-09-06 2008-09-03 静电吸盘装置中的气体供给结构的制造方法及静电吸盘装置气体供给结构以及静电吸盘装置
US12/676,834 US8051548B2 (en) 2007-09-06 2008-09-03 Method of manufacturing an electrostatic chuck
KR1020107007261A KR101384585B1 (ko) 2007-09-06 2008-09-03 정전 척 장치에서의 가스공급구조의 제조방법 및 정전 척 장치 가스공급구조 및 정전 척 장치
HK10108654A HK1142992A1 (en) 2007-09-06 2010-09-13 Method for manufacturing gas supply structure in electrostatic chuck apparatus, gas supply structure in electrostatic chuck apparatus, and electrostatic chuck apparatus

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007262714 2007-09-06
JP2007-262714 2007-09-06

Publications (1)

Publication Number Publication Date
WO2009031566A1 true WO2009031566A1 (ja) 2009-03-12

Family

ID=40428880

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/065836 WO2009031566A1 (ja) 2007-09-06 2008-09-03 静電チャック装置におけるガス供給構造の製造方法及び静電チャック装置ガス供給構造並びに静電チャック装置

Country Status (7)

Country Link
US (1) US8051548B2 (ja)
JP (1) JP5186504B2 (ja)
KR (1) KR101384585B1 (ja)
CN (1) CN101796626B (ja)
HK (1) HK1142992A1 (ja)
TW (1) TWI389246B (ja)
WO (1) WO2009031566A1 (ja)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102237292A (zh) * 2010-04-26 2011-11-09 Pmt有限公司 具有间隔物的静电吸盘
CN103222043A (zh) * 2010-09-08 2013-07-24 恩特格林斯公司 一种高传导静电夹盘
KR102724770B1 (ko) * 2023-04-24 2024-10-31 엔지케이 인슐레이터 엘티디 웨이퍼 배치대
JP7633866B2 (ja) 2021-04-08 2025-02-20 日本特殊陶業株式会社 保持部材

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US9558980B2 (en) * 2008-04-30 2017-01-31 Axcelis Technologies, Inc. Vapor compression refrigeration chuck for ion implanters
CA2704683A1 (en) * 2010-05-28 2010-08-12 Ibm Canada Limited - Ibm Canada Limitee Grounded lid for micro-electronic assemblies
US10276410B2 (en) * 2011-11-25 2019-04-30 Nhk Spring Co., Ltd. Substrate support device
US8980767B2 (en) 2012-01-13 2015-03-17 Applied Materials, Inc. Methods and apparatus for processing a substrate
CN103915309B (zh) * 2013-01-05 2016-04-13 中微半导体设备(上海)有限公司 等离子体处理腔室及其静电夹盘以及基片温度控制方法
US9314854B2 (en) 2013-01-30 2016-04-19 Lam Research Corporation Ductile mode drilling methods for brittle components of plasma processing apparatuses
US8893702B2 (en) 2013-02-20 2014-11-25 Lam Research Corporation Ductile mode machining methods for hard and brittle components of plasma processing apparatuses
CN110914971B (zh) 2018-04-05 2023-04-28 朗姆研究公司 有冷却气体区域和相应槽及单极静电夹持电极模式的静电卡盘
KR102516885B1 (ko) 2018-05-10 2023-03-30 삼성전자주식회사 증착 장비 및 이를 이용한 반도체 장치 제조 방법
CN110861113A (zh) * 2018-08-28 2020-03-06 吸力奇迹（北京）科技有限公司 静电吸附装置及其制备方法
KR102188779B1 (ko) * 2018-10-15 2020-12-08 세메스 주식회사 기판 지지 장치 및 그 제조방법
JP7153574B2 (ja) * 2019-01-17 2022-10-14 東京エレクトロン株式会社 上部電極構造、プラズマ処理装置、及び上部電極構造を組み立てる方法
US12300473B2 (en) * 2019-03-08 2025-05-13 Applied Materials, Inc. Electrostatic chuck for high bias radio frequency (RF) power application in a plasma processing chamber
US20210197236A1 (en) * 2019-12-25 2021-07-01 Temple Technology Ltd. Air curtain apparatus and an airflow accelerator for an air curtain apparatus
CN111128844A (zh) * 2019-12-31 2020-05-08 苏州芯慧联半导体科技有限公司 一种高冷却性能的静电卡盘
US11594401B2 (en) 2020-02-25 2023-02-28 Taiwan Semiconductor Manufacturing Co., Ltd. Method for manufacturing semiconductor wafer with wafer chuck having fluid guiding structure
KR102527183B1 (ko) * 2021-03-29 2023-04-28 주식회사 톱텍 밀착력이 향상된 정전척
KR102485430B1 (ko) * 2021-09-07 2023-01-06 주식회사 동탄이엔지 코팅 취약부 개선을 위한 정전척 및 정전척의 제조 방법
KR20240159576A (ko) * 2022-03-08 2024-11-05 램 리써치 코포레이션 정적 척의 세라믹 플레이트 및 금속 베이스플레이트를 본딩하기 위한 캡슐화된 압축 와셔

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JP4942364B2 (ja) * 2005-02-24 2012-05-30 京セラ株式会社 静電チャックおよびウェハ保持部材並びにウェハ処理方法

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JP2004349664A (ja) * 2003-05-23 2004-12-09 Creative Technology:Kk 静電チャック

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102237292A (zh) * 2010-04-26 2011-11-09 Pmt有限公司 具有间隔物的静电吸盘
TWI492330B (zh) * 2010-04-26 2015-07-11 Pmt Corp 具有間隔物的靜電吸盤
CN103222043A (zh) * 2010-09-08 2013-07-24 恩特格林斯公司 一种高传导静电夹盘
JP2013542590A (ja) * 2010-09-08 2013-11-21 インテグリス・インコーポレーテッド 高導電性静電チャック
CN103222043B (zh) * 2010-09-08 2016-10-12 恩特格林斯公司 一种高传导静电夹盘
US9692325B2 (en) 2010-09-08 2017-06-27 Entegris, Inc. High conductivity electrostatic chuck
JP7633866B2 (ja) 2021-04-08 2025-02-20 日本特殊陶業株式会社 保持部材
KR102724770B1 (ko) * 2023-04-24 2024-10-31 엔지케이 인슐레이터 엘티디 웨이퍼 배치대

Also Published As

Publication number Publication date
US8051548B2 (en) 2011-11-08
JP5186504B2 (ja) 2013-04-17
KR101384585B1 (ko) 2014-04-11
CN101796626A (zh) 2010-08-04
US20100254064A1 (en) 2010-10-07
JPWO2009031566A1 (ja) 2010-12-16
HK1142992A1 (en) 2010-12-17
KR20100085907A (ko) 2010-07-29
TWI389246B (zh) 2013-03-11
TW200919624A (en) 2009-05-01
CN101796626B (zh) 2012-02-01

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