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WO2009031276A1 - Ｉｉｉ族窒化物構造体およびｉｉｉ族窒化物半導体微細柱状結晶の製造方法 - Google Patents

Ｉｉｉ族窒化物構造体およびｉｉｉ族窒化物半導体微細柱状結晶の製造方法 Download PDF

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Publication number
WO2009031276A1
WO2009031276A1 PCT/JP2008/002322 JP2008002322W WO2009031276A1 WO 2009031276 A1 WO2009031276 A1 WO 2009031276A1 JP 2008002322 W JP2008002322 W JP 2008002322W WO 2009031276 A1 WO2009031276 A1 WO 2009031276A1
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WIPO (PCT)
Prior art keywords
iii nitride
columnar crystal
fine columnar
semiconductor fine
nitride semiconductor
Prior art date
Application number
PCT/JP2008/002322
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English (en)
French (fr)
Inventor
Katsumi Kishino
Akihiko Kikuchi
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Sophia School Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sophia School Corporation filed Critical Sophia School Corporation
Priority to US12/676,061 priority Critical patent/US8896100B2/en
Priority to CN200880105385.0A priority patent/CN101796212B/zh
Priority to KR1020107007206A priority patent/KR101464802B1/ko
Priority to JP2009531102A priority patent/JP5464518B2/ja
Priority to EP08829248.7A priority patent/EP2202329B1/en
Publication of WO2009031276A1 publication Critical patent/WO2009031276A1/ja

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02639—Preparation of substrate for selective deposition
    • H01L21/02642—Mask materials other than SiO2 or SiN
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/605—Products containing multiple oriented crystallites, e.g. columnar crystallites
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/02433—Crystal orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02603—Nanowires

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Nanotechnology (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Led Devices (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

ＩＩＩ族窒化物構造体が、基板１０２表面の所定領域に形成された金属からなる表面を有する膜１０８と、少なくとも基板１０２表面上に形成されたＩＩＩ族窒化物半導体からなる微細柱状結晶１１０とを含み、前記膜１０８が形成されていない前記基板１０２表面上において、前記膜１０８上よりも前記微細柱状結晶１１０の空間占有率が高い。
PCT/JP2008/002322 2007-09-03 2008-08-27 Ｉｉｉ族窒化物構造体およびｉｉｉ族窒化物半導体微細柱状結晶の製造方法 WO2009031276A1 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
US12/676,061 US8896100B2 (en) 2007-09-03 2008-08-27 III nitride structure and method for manufacturing III nitride semiconductor fine columnar crystal
CN200880105385.0A CN101796212B (zh) 2007-09-03 2008-08-27 Iii族氮化物结构体以及iii族氮化物半导体微细柱状晶体的制造方法
KR1020107007206A KR101464802B1 (ko) 2007-09-03 2008-08-27 Ⅰⅰⅰ족 질화물 구조체 및 ⅰⅰⅰ족 질화물 반도체 미세 주상 결정의 제조방법
JP2009531102A JP5464518B2 (ja) 2007-09-03 2008-08-27 Ｉｉｉ族窒化物構造体およびｉｉｉ族窒化物半導体微細柱状結晶の製造方法
EP08829248.7A EP2202329B1 (en) 2007-09-03 2008-08-27 Iii nitride structure and method for manufacturing iii nitride semiconductor fine columnar crystal

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-227935 2007-09-03
JP2007227935 2007-09-03

Publications (1)

Publication Number Publication Date
WO2009031276A1 true WO2009031276A1 (ja) 2009-03-12

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PCT/JP2008/002322 WO2009031276A1 (ja) 2007-09-03 2008-08-27 Ｉｉｉ族窒化物構造体およびｉｉｉ族窒化物半導体微細柱状結晶の製造方法

Country Status (7)

Country Link
US (1) US8896100B2 (ja)
EP (1) EP2202329B1 (ja)
JP (1) JP5464518B2 (ja)
KR (1) KR101464802B1 (ja)
CN (1) CN101796212B (ja)
TW (1) TW200933702A (ja)
WO (1) WO2009031276A1 (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
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WO2010139546A1 (de) * 2009-06-05 2010-12-09 Fraunhofer Gesellschaft zur Förderung der angewandten Forschung e.V. Halbleiterbauelement und verfahren zu seiner herstellung
EP3696300A1 (de) 2019-02-18 2020-08-19 Aixatech GmbH Verfahren zur herstellung eines verbundmaterialkörpers insbesondere für die verwendung bei der herstellung von elektronischen oder optoelektronischen bauelementen

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DE102013009824A1 (de) * 2013-06-11 2014-12-11 Forschungsverbund Berlin E.V. Halbleitervorrichtung mit Nanosäulen aus Gruppe III-Nitridmaterial und Herstellungsverfahren für eine solche Halbleitervorrichtung
FR3019188B1 (fr) * 2014-03-27 2017-11-24 Commissariat Energie Atomique Procede de croissance d'un element allonge a partir d'un germe forme dans un creux d'une couche ou d'un plot de nucleation
US10696899B2 (en) 2017-05-09 2020-06-30 International Business Machines Corporation Light emitting shell in multi-compartment microcapsules
US10357921B2 (en) 2017-05-24 2019-07-23 International Business Machines Corporation Light generating microcapsules for photo-curing
US10900908B2 (en) 2017-05-24 2021-01-26 International Business Machines Corporation Chemiluminescence for tamper event detection
US10392452B2 (en) 2017-06-23 2019-08-27 International Business Machines Corporation Light generating microcapsules for self-healing polymer applications
CN110760797B (zh) * 2019-11-27 2021-05-28 宁波工业技术研究院 一种表面强韧抗冲蚀防护涂层及其制备方法与应用

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JP2007131527A (ja) * 2006-12-21 2007-05-31 Sharp Corp 窒化物半導体基板、窒化物半導体レーザ素子、窒化物半導体基板の製造方法、および窒化物半導体レーザ素子の製造方法

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010139546A1 (de) * 2009-06-05 2010-12-09 Fraunhofer Gesellschaft zur Förderung der angewandten Forschung e.V. Halbleiterbauelement und verfahren zu seiner herstellung
EP3696300A1 (de) 2019-02-18 2020-08-19 Aixatech GmbH Verfahren zur herstellung eines verbundmaterialkörpers insbesondere für die verwendung bei der herstellung von elektronischen oder optoelektronischen bauelementen

Also Published As

Publication number Publication date
JP5464518B2 (ja) 2014-04-09
US20100193910A1 (en) 2010-08-05
CN101796212A (zh) 2010-08-04
JPWO2009031276A1 (ja) 2010-12-09
EP2202329A1 (en) 2010-06-30
KR101464802B1 (ko) 2014-11-24
EP2202329B1 (en) 2016-05-04
KR20100067101A (ko) 2010-06-18
TW200933702A (en) 2009-08-01
US8896100B2 (en) 2014-11-25
EP2202329A4 (en) 2012-08-08
CN101796212B (zh) 2014-04-09

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