+

WO2009030727A1 - Composant électronique avec organe de réception et de commande, notamment contact de commande sans fil - Google Patents

Composant électronique avec organe de réception et de commande, notamment contact de commande sans fil Download PDF

Info

Publication number
WO2009030727A1
WO2009030727A1 PCT/EP2008/061689 EP2008061689W WO2009030727A1 WO 2009030727 A1 WO2009030727 A1 WO 2009030727A1 EP 2008061689 W EP2008061689 W EP 2008061689W WO 2009030727 A1 WO2009030727 A1 WO 2009030727A1
Authority
WO
WIPO (PCT)
Prior art keywords
receiving
antenna
driving
electronic component
component
Prior art date
Application number
PCT/EP2008/061689
Other languages
German (de)
English (en)
Inventor
Michael Kaspar
Markus Richter
Gernot Schimetta
Robert Weinke
Original Assignee
Siemens Aktiengesellschaft
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Aktiengesellschaft filed Critical Siemens Aktiengesellschaft
Publication of WO2009030727A1 publication Critical patent/WO2009030727A1/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q23/00—Antennas with active circuits or circuit elements integrated within them or attached to them
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
    • H02M1/088—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices

Definitions

  • the present invention relates to a device according to the preamble of the main claim, and a method according to the preamble of the independent claim.
  • Power semiconductors are contacted in a conventional manner by means of wire bonding technology and thin wires or in the wire bond-free planar connection technology according to WO 03030247 by means of deposited conductor tracks.
  • control contacts When contacting components, for example, line semiconductors, in particular MOSFETs, thyristors or insulated gate bipolar transistors (IGBTs), the control contacts are contacted.
  • component for example, line semiconductors, in particular MOSFETs, thyristors or insulated gate bipolar transistors (IGBTs)
  • control contacts ⁇ flat take on a component surface a lot of space, which reduces the area of the line contacts.
  • such a contact must be electrically contacted in a conventional manner by means of wires or printed conductors.
  • power semiconductors such as thyristors or insulated gate bipolar transistors
  • a device according to the main claim, namely by the fact that at least one conventional control contact is avoided.
  • three-cycle components have only two contacts. Due to the possible enlargement of the remaining contact flat such devices can advantageously be easily contacted electrically and / or switch larger powers.
  • the device for generating signals for driving a transmitter has an antenna, which is in particular a radio antenna.
  • an antenna which is in particular a radio antenna.
  • a wireless control contact is generated particularly easily.
  • Particularly advantageous are the galvanic separation of transmitter and antenna and an associated reduction of Stor- large.
  • all switching and non-switching (diode) elements of a power module have only one connection surface at the top and one connection surface at the bottom. In this way, a multi ⁇ number of additionalmaschinetechniksmogzieren ready overall represents.
  • the antenna is a ring antenna.
  • a ring antenna is a metallized frame with dimensions adapted to the transmission frequency.
  • the antenna is a patch antenna. This can be integrated on the electronic component.
  • a patch antenna is a metallized surface with select ⁇ on the transmission frequency agreed dimensions.
  • the antenna is formed in an outer region of the component. Because of ⁇ sufficient space for the remaining contacts is also available.
  • the receiving and driving device has a logic device. This is particularly advantageous integrated into the device, so that a control is particularly easy ausvigbar.
  • the logic device is an application-specific integrated circuit (ASIC). That is, the logic device is adaptable to the individual requirements of the electronic component.
  • ASIC application-specific integrated circuit
  • the transmitter is positioned in close proximity to the receiving and driving device.
  • the transmitter is arranged on a control circuit board.
  • the surfaces of the power contacts may have an enlargement compared to conventional sizes.
  • FIG. 1 is an exemplary embodiment of a conventional Vorrich ⁇ tion
  • FIG. 2 shows an exemplary embodiment of a device according to the invention
  • FIG. 1 shows an exemplary embodiment of a conventional device with an electronic component 1.
  • an electronic component is for example a switchable power semiconductor, such as a thyristor, a MOSFET or an Insulated Gate Bepolar transistor (IGBT).
  • This switching power semiconductor is located on a substrate 13, wherein its lower power contact is electrically contacted and fixed.
  • On the upper side of the power semiconductor there is a power contact 11, as well as a conventional control contact 7 for driving the component 1.
  • FIG. 1 also shows a power contact Means 3 for generating signals for controlling the electronic device 1.
  • an IGBT can be used just so ⁇ a MOSFET, a thyristor or similar power semiconductors.
  • ignition by means of light can take place by means of an integrated light-emitting diode.
  • a line-connected control terminal is also used.
  • FIG 2 shows an exemplary embodiment of an inventive device.
  • the electronic component 1 is here as well, for example, a switchable power semiconductor.
  • the power semiconductor is electrically contacted and fixed on a substrate 13.
  • the device 3 for generating signals for activation is a transmitter 3b.
  • the receiving and control device 5 has an antenna 5a, in particular radio antenna on.
  • the antenna 5a may be a ring antenna.
  • the antenna 5a is advantageously formed in an outer region of the component 1, but not outside of the silicon, but on the upper side in the outer region - directly next to the sawing edge.
  • Figure 2 shows the loop antenna cross-section ⁇ .
  • An antenna 5a may also be a patch antenna.
  • 5b logic means ⁇ example, an Application- Specific- Integrated- Circuit (ASIC) to allow gikein ⁇ chtung special way an adjustment of the Lo 5b are provided to the electronic device.
  • ASIC Application- Specific- Integrated- Circuit
  • the transmitter 3b is positioned in unitzba ⁇ rer close to the receiving and driving means 5, 5a, 5b, on a An horrungsplatme.
  • FIG. 2 also shows that the area of the upper power contact 11 can have an enlargement IIa compared to the conventional one since a conventional control contact 7 can be avoided.
  • planar contacting according to WO 03030247 can be implemented in a simplified manner.
  • a loop antenna 5a in the outer region of the device 1 a receiving and An horrungsem ⁇ chtung 5 is provided for receiving the signals and for driving the device 1, via radio signals from a located in the immediate nearby transmitter 3b (at ⁇ play, on a drive board 9) is capable of ensuring the control function for a chip.
  • An integrated in the component 1 ASIC provides the logic device 5b for the control.

Landscapes

  • Electronic Switches (AREA)

Abstract

L'invention concerne la mise en contact électrique de composants électroniques (1), notamment de semiconducteurs de puissance assurant une commutation, comme par exemple des thyristors, des transistors MOS à effet de champ ou des transistors bipolaires à porte isolée. L'invention vise à améliorer la mise en contact de composants électroniques (1) de façon à la simplifier et/ou à augmenter les surfaces de contact de contacts de puissance (11), par rapport à l'état de la technique. A cet effet, un dispositif selon la revendication principale permet d'éviter au moins un contact de commande classique (7). La mise en contact plane selon le document WO 03030247 peut ainsi être réalisée d'une manière simplifiée.
PCT/EP2008/061689 2007-09-06 2008-09-04 Composant électronique avec organe de réception et de commande, notamment contact de commande sans fil WO2009030727A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102007042444.4 2007-09-06
DE102007042444A DE102007042444A1 (de) 2007-09-06 2007-09-06 Elektronisches Bauelement mit Empfangs- und Ansteuereinrichtung, insbesondere drahtlosem Steuerkontakt

Publications (1)

Publication Number Publication Date
WO2009030727A1 true WO2009030727A1 (fr) 2009-03-12

Family

ID=40134943

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2008/061689 WO2009030727A1 (fr) 2007-09-06 2008-09-04 Composant électronique avec organe de réception et de commande, notamment contact de commande sans fil

Country Status (2)

Country Link
DE (1) DE102007042444A1 (fr)
WO (1) WO2009030727A1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4781400B2 (ja) 2008-06-20 2011-09-28 三菱電機株式会社 半導体装置

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2224393A1 (de) * 1971-05-19 1972-11-30 Gen Electric Schaltung zur Einschaltung von Thyristoren
DE2360645A1 (de) * 1973-12-05 1975-06-19 Siemens Ag Zuendeinrichtung fuer eine anzahl von elektrischen ventilen, insbesondere von thyristoren
DE2413164A1 (de) * 1974-03-19 1975-09-25 Siemens Ag Schaltungsanordnung zur drahtlosen uebertragung eines steuersignals an die steuerstrecke eines steuerbaren halbleiterventils
US5903239A (en) * 1994-08-11 1999-05-11 Matsushita Electric Industrial Co., Ltd. Micro-patch antenna connected to circuits chips
WO2004093002A1 (fr) * 2003-04-11 2004-10-28 Infineon Technologies Ag Transpondeur et procede de fabrication
WO2007043602A1 (fr) * 2005-10-14 2007-04-19 Semiconductor Energy Laboratory Co., Ltd. Composant à semiconducteur et système de communication utilisant le composant à semiconducteur

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1430524A2 (fr) 2001-09-28 2004-06-23 Siemens Aktiengesellschaft Procede d'etablissement de contact pour des surfaces de contact electriques situees sur un substrat et dispositif constitue d'un substrat pourvu de surfaces de contact electriques
DE102004060821B4 (de) * 2004-12-17 2011-04-28 Telefunken Semiconductors Gmbh & Co. Kg Verfahren zur Herstellung einer Deep-Trench-Struktur in einer STI-Struktur eines Halbleiterkörpers
DE102006023123B4 (de) * 2005-06-01 2011-01-13 Infineon Technologies Ag Abstandserfassungsradar für Fahrzeuge mit einem Halbleitermodul mit Komponenten für Höchstfrequenztechnik in Kunststoffgehäuse und Verfahren zur Herstellung eines Halbleitermoduls mit Komponenten für ein Abstandserfassungsradar für Fahrzeuge in einem Kunststoffgehäuse

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2224393A1 (de) * 1971-05-19 1972-11-30 Gen Electric Schaltung zur Einschaltung von Thyristoren
DE2360645A1 (de) * 1973-12-05 1975-06-19 Siemens Ag Zuendeinrichtung fuer eine anzahl von elektrischen ventilen, insbesondere von thyristoren
DE2413164A1 (de) * 1974-03-19 1975-09-25 Siemens Ag Schaltungsanordnung zur drahtlosen uebertragung eines steuersignals an die steuerstrecke eines steuerbaren halbleiterventils
US5903239A (en) * 1994-08-11 1999-05-11 Matsushita Electric Industrial Co., Ltd. Micro-patch antenna connected to circuits chips
WO2004093002A1 (fr) * 2003-04-11 2004-10-28 Infineon Technologies Ag Transpondeur et procede de fabrication
WO2007043602A1 (fr) * 2005-10-14 2007-04-19 Semiconductor Energy Laboratory Co., Ltd. Composant à semiconducteur et système de communication utilisant le composant à semiconducteur

Also Published As

Publication number Publication date
DE102007042444A1 (de) 2009-03-12

Similar Documents

Publication Publication Date Title
DE102017118349B4 (de) Optische emitterbaugruppen
DE102014111252B4 (de) Elektronisches Bauteil und Verfahren
DE102007012154B4 (de) Halbleitermodul mit Halbleiterchips und Verfahren zur Herstellung desselben
EP1389820B1 (fr) Disposition de circuit à faible inductance pour modules à sémi-conducteur de puissance
DE102015121680B4 (de) Leistungshalbleitermodul, das eine flexible leiterplattenverbindung mit einer niedrigen gate-treiberinduktivität aufweist und verfahren zum herstellen
DE102017214248B4 (de) Vorrichtung mit einer an ein induktives Element angebrachten Leistungsstufe und Herstellungsverfahren dafür
EP2525397B2 (fr) Semi-conducteur de puissance
DE102015115999B4 (de) Elektronische Komponente
DE10258570A1 (de) Gehäuse für Leistungshalbleitermodule
EP1952439B1 (fr) Dispositif a semi-conducteur pourvu d'un boitier contenant une unite de commande
DE102017213872B4 (de) Einseitige Leistungsvorrichtungsbaugruppe und Verfahren zur Herstellung
DE102017213873A1 (de) Leistungsschalter-Packaging mit vorgeformten elektrischen Verbindungen zum Verbinden eines Induktors mit einem oder mehreren Transistoren
EP1318545A1 (fr) Sous-module semi-conducteur à haut prestation et module semi-conducteur à haut prestation
DE102015104995B4 (de) Verbindungshalbleitervorrichtung mit einem mehrstufigen Träger
EP2557595A1 (fr) Système électronique de puissance avec un dispositif de commutation et un dispositif de commande
WO2009030727A1 (fr) Composant électronique avec organe de réception et de commande, notamment contact de commande sans fil
DE102015111479B4 (de) Halbleitervorrichtung mit einer klemmstruktur
DE102010000908B4 (de) Leistungshalbleitermodul mit niederinduktiven Hochstromkontakten, Leistungshalbleitermodulsystem, Leistungshalbleitermodulanordnung und Verfahren zur Herstellung einer Leisungshalbleitermodulanordnung
DE202013105809U1 (de) Leistungshalbleitermodul und Kontaktierungsanordnung
DE102019120886A1 (de) Halbleitergehäuse mit einem Hohlraum in seinem Gehäusekörper
DE112021003557T5 (de) Halbleiterbauteil
DE10022268B4 (de) Halbleiterbauelement mit zwei Halbleiterkörpern in einem gemeinsamen Gehäuse
DE102022120578B4 (de) Halbleitervorrichtung und elektronische vorrichtung
WO2016142372A1 (fr) Module de semi-conducteur de puissance pourvu d'une structure de connexion par soudage améliorée
WO2011098534A1 (fr) Structure échelonnée pour composants semi-conducteurs latéraux à courant admissible élevé

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 08803659

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 08803659

Country of ref document: EP

Kind code of ref document: A1

点击 这是indexloc提供的php浏览器服务，不要输入任何密码和下载