WO2009021364A1 - Procédé de contrôle du grattage de la surface polie d'une tranche de silicium - Google Patents
Procédé de contrôle du grattage de la surface polie d'une tranche de silicium Download PDFInfo
- Publication number
- WO2009021364A1 WO2009021364A1 PCT/CN2007/002754 CN2007002754W WO2009021364A1 WO 2009021364 A1 WO2009021364 A1 WO 2009021364A1 CN 2007002754 W CN2007002754 W CN 2007002754W WO 2009021364 A1 WO2009021364 A1 WO 2009021364A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- polishing
- silicon wafer
- scratching
- controlling
- pressure
- Prior art date
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 69
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 69
- 239000010703 silicon Substances 0.000 title claims abstract description 69
- 238000000034 method Methods 0.000 title claims abstract description 35
- 238000006748 scratching Methods 0.000 title claims abstract description 28
- 230000002393 scratching effect Effects 0.000 title claims abstract description 28
- 238000005498 polishing Methods 0.000 claims abstract description 141
- 239000007788 liquid Substances 0.000 claims abstract description 25
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 17
- 239000008367 deionised water Substances 0.000 claims abstract description 16
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 16
- -1 pH regulator Substances 0.000 claims abstract description 16
- 239000002738 chelating agent Substances 0.000 claims abstract description 15
- 239000004094 surface-active agent Substances 0.000 claims abstract description 15
- 239000000314 lubricant Substances 0.000 claims abstract description 10
- 239000002245 particle Substances 0.000 claims description 26
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 claims description 16
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 14
- 238000006116 polymerization reaction Methods 0.000 claims description 14
- 229920002113 octoxynol Polymers 0.000 claims description 11
- 239000003002 pH adjusting agent Substances 0.000 claims description 10
- 229940051841 polyoxyethylene ether Drugs 0.000 claims description 10
- 229920000056 polyoxyethylene ether Polymers 0.000 claims description 10
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical group OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 claims description 9
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical group [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 9
- JYCQQPHGFMYQCF-UHFFFAOYSA-N 4-tert-Octylphenol monoethoxylate Chemical compound CC(C)(C)CC(C)(C)C1=CC=C(OCCO)C=C1 JYCQQPHGFMYQCF-UHFFFAOYSA-N 0.000 claims description 8
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 8
- 235000011187 glycerol Nutrition 0.000 claims description 7
- 239000002736 nonionic surfactant Substances 0.000 claims description 7
- 239000000377 silicon dioxide Substances 0.000 claims description 7
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 claims description 6
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 6
- AVXURJPOCDRRFD-UHFFFAOYSA-N Hydroxylamine Chemical compound ON AVXURJPOCDRRFD-UHFFFAOYSA-N 0.000 claims description 6
- 150000001412 amines Chemical class 0.000 claims description 6
- 150000007529 inorganic bases Chemical group 0.000 claims description 6
- 239000000203 mixture Substances 0.000 claims description 6
- 150000007530 organic bases Chemical class 0.000 claims description 6
- 230000008569 process Effects 0.000 claims description 6
- 239000003795 chemical substances by application Substances 0.000 claims description 5
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 5
- WDVWEDIMFKEWMT-UHFFFAOYSA-N 1-amino-2-hydroxytetradecan-3-one Chemical group CCCCCCCCCCCC(=O)C(O)CN WDVWEDIMFKEWMT-UHFFFAOYSA-N 0.000 claims description 4
- BYACHAOCSIPLCM-UHFFFAOYSA-N 2-[2-[bis(2-hydroxyethyl)amino]ethyl-(2-hydroxyethyl)amino]ethanol Chemical compound OCCN(CCO)CCN(CCO)CCO BYACHAOCSIPLCM-UHFFFAOYSA-N 0.000 claims description 4
- MHTXZLMNGBRJLU-UHFFFAOYSA-N 4,4-diaminohexane-1,1,1,2,3,3-hexol Chemical compound OC(C(O)(O)C(CC)(N)N)C(O)(O)O MHTXZLMNGBRJLU-UHFFFAOYSA-N 0.000 claims description 4
- 229910019142 PO4 Inorganic materials 0.000 claims description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 4
- 150000002191 fatty alcohols Chemical class 0.000 claims description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 4
- 230000000149 penetrating effect Effects 0.000 claims description 4
- 239000010452 phosphate Substances 0.000 claims description 4
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 claims description 4
- IEORSVTYLWZQJQ-UHFFFAOYSA-N 2-(2-nonylphenoxy)ethanol Chemical group CCCCCCCCCC1=CC=CC=C1OCCO IEORSVTYLWZQJQ-UHFFFAOYSA-N 0.000 claims description 3
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 3
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical group OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 claims description 3
- 229910021529 ammonia Inorganic materials 0.000 claims description 3
- 125000000373 fatty alcohol group Chemical group 0.000 claims description 3
- JVKAWJASTRPFQY-UHFFFAOYSA-N n-(2-aminoethyl)hydroxylamine Chemical group NCCNO JVKAWJASTRPFQY-UHFFFAOYSA-N 0.000 claims description 3
- 229920000847 nonoxynol Polymers 0.000 claims description 3
- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 claims description 2
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 claims description 2
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 claims description 2
- LQZZUXJYWNFBMV-UHFFFAOYSA-N ethyl butylhexanol Natural products CCCCCCCCCCCCO LQZZUXJYWNFBMV-UHFFFAOYSA-N 0.000 claims description 2
- MWKFXSUHUHTGQN-UHFFFAOYSA-N n-decyl alcohol Natural products CCCCCCCCCCO MWKFXSUHUHTGQN-UHFFFAOYSA-N 0.000 claims description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims 1
- QXNVGIXVLWOKEQ-UHFFFAOYSA-N Disodium Chemical compound [Na][Na] QXNVGIXVLWOKEQ-UHFFFAOYSA-N 0.000 claims 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 claims 1
- KCXMKQUNVWSEMD-UHFFFAOYSA-N benzyl chloride Chemical compound ClCC1=CC=CC=C1 KCXMKQUNVWSEMD-UHFFFAOYSA-N 0.000 claims 1
- 229940073608 benzyl chloride Drugs 0.000 claims 1
- 229910052796 boron Inorganic materials 0.000 claims 1
- 229940008099 dimethicone Drugs 0.000 claims 1
- 235000013870 dimethyl polysiloxane Nutrition 0.000 claims 1
- 239000004205 dimethyl polysiloxane Substances 0.000 claims 1
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 claims 1
- 229920002545 silicone oil Polymers 0.000 claims 1
- 239000004408 titanium dioxide Substances 0.000 claims 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 claims 1
- 229920002554 vinyl polymer Polymers 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 abstract description 67
- 230000006872 improvement Effects 0.000 abstract description 2
- 238000004519 manufacturing process Methods 0.000 description 7
- 230000003746 surface roughness Effects 0.000 description 7
- 238000007517 polishing process Methods 0.000 description 6
- 238000012545 processing Methods 0.000 description 6
- WGQKYBSKWIADBV-UHFFFAOYSA-N benzylamine Chemical compound NCC1=CC=CC=C1 WGQKYBSKWIADBV-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000002357 osmotic agent Substances 0.000 description 4
- 229910052580 B4C Inorganic materials 0.000 description 3
- BVTJGGGYKAMDBN-UHFFFAOYSA-N Dioxetane Chemical compound C1COO1 BVTJGGGYKAMDBN-UHFFFAOYSA-N 0.000 description 3
- INAHAJYZKVIDIZ-UHFFFAOYSA-N boron carbide Chemical compound B12B3B4C32B41 INAHAJYZKVIDIZ-UHFFFAOYSA-N 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910001141 Ductile iron Inorganic materials 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 229960001484 edetic acid Drugs 0.000 description 2
- 235000013399 edible fruits Nutrition 0.000 description 2
- 125000003916 ethylene diamine group Chemical group 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- CRUVUWATNULHFA-UHFFFAOYSA-M tetramethylphosphanium;hydroxide Chemical compound [OH-].C[P+](C)(C)C CRUVUWATNULHFA-UHFFFAOYSA-M 0.000 description 2
- HJTAZXHBEBIQQX-UHFFFAOYSA-N 1,5-bis(chloromethyl)naphthalene Chemical compound C1=CC=C2C(CCl)=CC=CC2=C1CCl HJTAZXHBEBIQQX-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910001018 Cast iron Inorganic materials 0.000 description 1
- SNRUBQQJIBEYMU-UHFFFAOYSA-N Dodecane Natural products CCCCCCCCCCCC SNRUBQQJIBEYMU-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 235000017858 Laurus nobilis Nutrition 0.000 description 1
- 235000005212 Terminalia tomentosa Nutrition 0.000 description 1
- 244000125380 Terminalia tomentosa Species 0.000 description 1
- 239000003082 abrasive agent Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 150000001408 amides Chemical class 0.000 description 1
- GOLCXWYRSKYTSP-UHFFFAOYSA-N arsenic trioxide Inorganic materials O1[As]2O[As]1O2 GOLCXWYRSKYTSP-UHFFFAOYSA-N 0.000 description 1
- 229910001863 barium hydroxide Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000013522 chelant Substances 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 125000003438 dodecyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000011268 mixed slurry Substances 0.000 description 1
- 239000003607 modifier Substances 0.000 description 1
- SQDFHQJTAWCFIB-UHFFFAOYSA-N n-methylidenehydroxylamine Chemical compound ON=C SQDFHQJTAWCFIB-UHFFFAOYSA-N 0.000 description 1
- GSWAOPJLTADLTN-UHFFFAOYSA-N oxidanimine Chemical compound [O-][NH3+] GSWAOPJLTADLTN-UHFFFAOYSA-N 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 125000003396 thiol group Chemical class [H]S* 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
- B24B37/08—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for double side lapping
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/16—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation taking regard of the load
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
Definitions
- the invention relates to a silicon wafer processing method, in particular to a method for controlling the scratching of a silicon wafer polishing surface for processing and polishing a single crystal silicon wafer for an integrated circuit substrate and reducing the degree of surface scratching.
- Silicon is a hard and brittle material with a diamond crystal structure and covalently bonded between atoms. It is a good semiconductor material.
- silicon wafers silicon wafers.
- the surface of the silicon wafer must be straight, especially as the integration level of the integrated circuits continues to increase, and the requirements for the flatness and roughness of the silicon wafers are proposed. Strict requirements.
- Polishing is the second mechanical processing of the surface after the silicon wafer is sliced, which is also a necessary basic process in the wafer processing technology.
- the purpose of polishing is to reduce the damage of the damage layer and surface of the surface of the silicon wafer during the grinding process, to achieve uniformity of the surface damage layer and to control the length of the scratch surface, so that the surface corrosion rate is uniform during chemical corrosion. Consistent.
- Wafer polishing includes light throwing, medium throwing, heavy throwing and water polishing. Generally, when polishing, the silicon wafer to be polished is first attached to the polishing machine polishing disc, and then the polishing disc is fixed on the polishing machine polishing head, and then adjusted. And control the appropriate pressure of the polishing machine, the appropriate rotation speed of the upper and lower polishing discs, and a reasonable flow of polishing liquid between the polishing disc and the silicon wafer, and then polish the silicon wafer.
- the surface polish of silicon wafers is one of the most important factors affecting the quality and reliability of electronic components. It is important to improve the pass rate of silicon wafer polishing products and control the scratching of polished surfaces. .
- a polishing fluid prepared by selecting a larger abrasive material in order to pursue the removal rate during the polishing process, resulting in an increase in the polishing damage layer and an increase in the number of surface scratches.
- An aluminum oxide polishing liquid having a specific particle size distribution is disclosed in Japanese Laid-Open Patent Publication No. 2001-323254.
- the polishing liquid uses nearly monodisperse colloidal boron carbide as an abrasive, and a large amount of scratches are formed on the surface of the 3 ⁇ 4 after polishing.
- U.S. Patent No. 6,143,662 discloses a polishing method using a small particle and a large particle mixed slurry, which also causes a large amount of scratch on the surface of the silicon wafer after polishing.
- Patent No. 03155318. 4 a smaller polishing scratch is achieved by controlling the abrasive particle size than the above two polishing liquids, but the removal rate of the polished silicon wafer is lowered due to the change in the abrasive particle size.
- Patent 200510055710. 5 proposed a polishing method using spherical silica abrasive, although the effect of less polishing scratch is achieved, but this method requires higher abrasive performance, increases production cost, and is in mass production. Not easy to achieve.
- the main purpose of the present invention is to overcome the above-mentioned shortcomings of existing products, and to provide a control method for scratching a silicon wafer polishing surface, which improves the processing conditions of the silicon wafer polishing, and can effectively reduce the scratch on the surface of the polished silicon wafer. 'At the same time, it can guarantee the high removal rate of wafer polishing, and the production cost is low, which is suitable for scale production.
- the object of the present invention is achieved by the following technical solutions.
- the method for controlling the scratching of the polished surface of the silicon wafer comprises: attaching the silicon wafer to the polishing machine polishing disc, and then fixing the polishing disc on the polishing machine polishing head to control the pressure of the polishing machine and the rotation speed of the upper and lower polishing discs.
- polishing liquid between the polishing disk and the silicon wafer; wherein the polishing liquid comprises an abrasive, a penetrating agent, a lubricant, a pH adjusting agent, a surfactant, a chelating agent, and deionized water; and the pressure of the polishing machine
- the control is below 50 kPa, the rotational speed of the upper polishing disk is controlled below 60 rp m , and the rotational speed of the lower polishing disk is controlled below 60 rpm.
- the 5% by weight of the osmotic agent is 5% to 5%, and the osmotic agent is 3% to 5%. 5% ⁇ 1.
- the pH of the modifier is 10% to 20%
- the surfactant is 0.1% to 1.
- the chelating agent is 1% to 3%
- deionized Water is the balance; at room temperature, abrasive, penetrant, lubricant, pH adjuster, surfactant and chelating agent are sequentially added to the deionized water, and stirred uniformly to prepare a polishing liquid.
- the foregoing method for controlling scratching of a silicon wafer polishing surface characterized in that the abrasive is silicon dioxide (SiO 2 ) having a particle diameter of 70 to 90 nm, and aluminum oxide having a particle diameter of 150 to 200 nm ( ⁇ 1 ⁇ ) ), a particle size of 100-150 nm ceria (Ce0 2), a particle size of 100 to 150 nm titanium oxide (Ti0 2) or a particle diameter of 150 to 200 nanometers boron carbide;
- the penetrant is poly An oxyethylene ether (JFC) or a phosphate;
- the pH adjuster is an inorganic base or an organic base; and
- the chelating agent is one of ethylenediaminetetraacetic acid (EDTA), disodium edetate, hydroxylamine and amine Or a combination thereof;
- the lubricant is glycerin;
- the surfactant is a nonionic surfactant.
- the foregoing method for controlling scratching of a polished surface of a silicon wafer characterized in that the hydroxylamine is triethanolamine, tetrahydroxyethylethylenediamine or hexahydroxypropylpropanediamine; the amine is ethylenediamine or tetramethyl Barium hydroxide.
- the nonionic surfactant is a fatty alcohol a polyoxyethylene ether, an alkanoyl alcohol amide or a mixture of the two;
- the fatty alcohol polyoxyethylene ether is a nonylphenol ethoxylate having a degree of polymerization of 15, and an octylphenol ethoxylate having a degree of polymerization of 20.
- the decyl alcohol amide is a laurel Acyl monoethanolamine, dihydroxyethyltridecylamide or dodecyl alcohol amide.
- the foregoing method for controlling scratching of a polished surface of a silicon wafer characterized in that the inorganic base is potassium hydroxide, sodium hydroxide or ammonia; the organic base is hydroxyethylenediamine, benzylamine, ethanolamine or tetramethylhydrogen. Ammonium oxide.
- the foregoing method for controlling scratching of a silicon wafer polishing surface is characterized in that the pressure of the polishing machine is preferably 25 kPa or less, and the pressure application process is performed by a constant pressure of 0 to a desired pressure r and polishing at a stable pressure.
- the method for controlling the scratching of the polished surface of the silicon wafer comprises: bonding the silicon wafer to the polishing machine polishing disc, and then fixing the polishing disc on the polishing machine polishing head, controlling the pressure of the polishing machine and the rotation speed of the upper and lower polishing disks, and Injecting a polishing liquid between the polishing disk and the silicon wafer; the improvement is that the polishing liquid comprises an abrasive, a penetrating agent, a lubricant, a pH adjuster, a surfactant, a chelating agent, and deionized water;
- the pressure is controlled below 50 kPa, the rotational speed of the upper polishing disk is controlled below 60 rpm, and the rotational speed of the lower polishing disk is controlled below 60 rpm.
- the 5% by weight of the osmotic agent is 5% to 5%, and the osmotic agent is 3% to 5%. 5% ⁇ 1.
- a pH adjuster of 10% to 20% a surfactant of 0.1% to 1.0%, a chelating agent of 1% to 3%, deionized water
- a chelating agent of 1% to 3% deionized water
- the method for controlling scratching of a polished surface of a silicon wafer according to the present invention is characterized in that the abrasive is silicon dioxide (SiO 2 ) having a particle diameter of 70 to 90 nm and aluminum oxide having a particle diameter of 150 to 200 nm (A1).
- SiO 2 silicon dioxide
- Al oxide aluminum oxide having a particle diameter of 150 to 200 nm
- the agent is polyoxyethylene ether (JFC) or phosphate
- the pH adjuster is an inorganic base or an organic base
- the chelating agent is ethylenediaminetetraacetic acid (EDTA), disodium edetate, hydroxylamine and amine One or a combination thereof
- the lubricant is glycerin
- the surfactant is a nonionic surfactant.
- the nonionic surfactant is a fatty alcohol polyoxyethylene ether, a mercapto alcohol amide or a mixture of the two; the fatty alcohol polyoxyethylene ether is a nonylphenol ethoxylate having a degree of polymerization of 15, and the degree of polymerization is 20 octylphenol ethoxylates (0-20), octylphenol ethoxylates with a degree of polymerization of 25 (0-25) or octylphenol ethoxylates with a degree of polymerization of 40 (0-40)
- the mercapto alcohol 'amide is lauroyl monoethanolamine, dihydroxyethyltridecylamide or dodecyl alcoholamide; the inorganic base is potassium hydroxide
- the pressure of the polishing machine is preferably 25 kPa or less, and the pressure application process is carried out by a constant pressure of 0 to the desired pressure, and is thrown under a stable pressure.
- the method for controlling the scratching of the polished surface of the silicon wafer of the present invention mainly aims at reducing the surface scratching in the polishing process of the silicon wafer by improving the processing conditions of the silicon wafer polishing. Firstly, the formulation of the polishing liquid is improved.
- the abrasive selected in the polishing liquid is a nano-scale abrasive.
- the abrasive Compared with the conventional abrasive, the abrasive has the characteristics of small particle size, high fineness, good particle stability and firm particles, so that after polishing The surface roughness is lower, and the surface scratching can be effectively reduced; the chelating agent is added to the polishing liquid to chelate the heavy metal ions which affect the subsequent processing of the silicon wafer, and the effect of adding the penetrating agent is to increase the polishing.
- the penetration and flowability of the liquid in the polishing cloth makes the mass exchange effect of the polishing liquid in the polishing process more favorable; the fatty alcohol polyoxygen J: oxime ether or alkyl alcohol amide is used as the nonionic surfactant in the polishing liquid of the invention.
- one of the two can be used alone, or a mixture of any two of them, the two surfactants can effectively reduce the scratch on the polished surface, mainly because the two are polished During the process, it acts as a wetting particle. During the polishing process, they can adsorb on the solid surface and protect the surface of the silicon wafer. Low surface tension, such that the wafer surface during polishing in resistance to cracking, formed pieces, thereby reducing the surface scratches after polishing. Secondly, the reasonable polishing machine pressure and the rotational speed of the polishing disc are designed. At this pressure and speed, the polishing machine can achieve the most efficient use efficiency, thereby reducing scratches.
- the polishing machine used in the method for controlling the scratching of the polished surface of the silicon wafer is a commercially available product, for example, a double-sided polishing machine, and the material of the polishing disk may be spherical graphite cast iron or other, so No more details are given.
- the method of the present invention can be applied to a light throwing, medium throwing, and heavy polishing process of a silicon wafer.
- the invention has the advantages of using a scientifically rationally formulated polishing liquid and adjusting and controlling the polishing machine to operate under suitable pressure and speed conditions, thereby effectively reducing the scratch on the surface of the silicon wafer, providing better surface quality and faster polishing. Rate, and does not increase production costs.
- the Lanxin 815B double-sided polishing machine is used, and the polishing disc is made of spheroidal graphite cast iron.
- silica abrasive Prepare 1 kg of silicon wafer polishing solution. Weigh 10% of the silica abrasive by weight of the preparation slurry. The particle size of the silica is 70 nm, 12% sodium hydroxide, 0.5% lauroyl monoethanolamine, 3. 5% phosphoric acid. Ester, 1% glycerol, 2% hexahydroxypropyl propylenediamine, balance to deionized water. The above-mentioned silica abrasive, sodium hydroxide, lauroyl monoethanolamine, phosphate, glycerin and hexahydroxypropylpropanediamine were added to the deionized water in this order at room temperature, and the mixture was stirred for use.
- the silicon wafer to be polished is pasted on the polishing disc of the polishing machine, and the polishing disc with the silicon wafer adhered is fixed on the machine throwing head, and the pressure of the polishing machine is adjusted to increase from 0 to 10 kPa, and controlled at 10 kPa. 5 ⁇ / ⁇ Adjusting the flow rate of the polishing liquid is 2. 5 l / min.
- the surface roughness value is about 0.03 nm, and the surface roughness value is about 0.03 nm.
- the Lanxin 815B double-sided polishing machine is used, and the polishing disc is made of spheroidal graphite cast iron.
- the arsenic trioxide abrasive having a particle size of 200 nm, 10% tetramethylammonium hydroxide, and 0.3% polymerization degree of 25 were respectively weighed.
- the silicon wafer to be polished is pasted on the polishing disc, and the polishing disc with the silicon wafer adhered is fixed on the polishing machine head, and the pressure of the polishing machine is uniformly increased from 0 to 10 kPa, and controlled at about 10 kPa, and controlled. 5 ⁇ / ⁇
- the polishing liquid flow rate is also 2.5 liters / min.
- the surface removal value is generally about 0. 5nm / m i n , and the surface roughness value is about 0.5 nm / m i n using the existing polishing process. 0. 03nra or so.
- the present invention relates to a room temperature of 20-25'C.
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Abstract
La présente invention a pour objet un procédé de contrôle du grattage des surfaces polies de tranches de silicium, qui comprend les étapes consistant à coller des tranches de silicium sur les disques de polissage d'une polisseuse, puis à maintenir les disques de polissage sur les têtes de polissage de la polisseuse, à contrôler la pression, la vitesse de rotation des disques supérieurs et inférieurs de la polisseuse, et à injecter un liquide de polissage entre les disques de polissage et la tranche de silicium. L'amélioration réside en ce que : le liquide de polissage comprend un abrasif, un pénétrant, un lubrifiant, un régulateur de pH, un agent tensioactif, un agent chélatant et de l'eau déminéralisée; la pression de la polisseuse est contrôlée au-dessous de 50 kPa, la vitesse de rotation des disques de polissage supérieurs est contrôlée au-dessous de 60 tours par minute, la vitesse de rotation des disques de polissage inférieurs est contrôlée au-dessous de 60 tours par minute. Le procédé peut réduire le grattage des surfaces polies de tranches de silicium et peut garantir au polissage de la tranche de silicium un taux de dépose plus élevé. De plus, le coût est bas et convient aux demandes à échelle industrielle.
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CN115746712A (zh) * | 2022-11-28 | 2023-03-07 | 北京航天赛德科技发展有限公司 | 一种用于硅衬底抛光的抛光组合物及其制备方法和应用 |
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CN115785822B (zh) * | 2022-12-02 | 2024-03-22 | 深圳玖创精密科技有限公司 | 一种抛光液及其制备方法 |
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