WO2009009076A3 - Error correction for memory - Google Patents
Error correction for memory Download PDFInfo
- Publication number
- WO2009009076A3 WO2009009076A3 PCT/US2008/008436 US2008008436W WO2009009076A3 WO 2009009076 A3 WO2009009076 A3 WO 2009009076A3 US 2008008436 W US2008008436 W US 2008008436W WO 2009009076 A3 WO2009009076 A3 WO 2009009076A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- error correction
- level
- memory
- row
- differing
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F11/00—Error detection; Error correction; Monitoring
- G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
- G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
- G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
- G06F11/1008—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices
- G06F11/1072—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices in multilevel memories
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
Landscapes
- Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- Quality & Reliability (AREA)
- Physics & Mathematics (AREA)
- General Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Read Only Memory (AREA)
- Techniques For Improving Reliability Of Storages (AREA)
- For Increasing The Reliability Of Semiconductor Memories (AREA)
Abstract
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020107002788A KR101371830B1 (en) | 2007-07-09 | 2008-07-09 | Error correction for memory |
CN200880102644.4A CN101779194B (en) | 2007-07-09 | 2008-07-09 | Error correction for memory |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/774,825 | 2007-07-09 | ||
US11/774,825 US7747903B2 (en) | 2007-07-09 | 2007-07-09 | Error correction for memory |
Publications (3)
Publication Number | Publication Date |
---|---|
WO2009009076A2 WO2009009076A2 (en) | 2009-01-15 |
WO2009009076A3 true WO2009009076A3 (en) | 2009-07-16 |
WO2009009076A9 WO2009009076A9 (en) | 2010-02-25 |
Family
ID=40229346
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2008/008436 WO2009009076A2 (en) | 2007-07-09 | 2008-07-09 | Error correction for memory |
Country Status (5)
Country | Link |
---|---|
US (2) | US7747903B2 (en) |
KR (1) | KR101371830B1 (en) |
CN (1) | CN101779194B (en) |
TW (1) | TWI394167B (en) |
WO (1) | WO2009009076A2 (en) |
Families Citing this family (86)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4524309B2 (en) * | 2006-03-13 | 2010-08-18 | パナソニック株式会社 | Memory controller for flash memory |
US7685494B1 (en) | 2006-05-08 | 2010-03-23 | Marvell International, Ltd. | Error correction coding for varying signal-to-noise ratio channels |
US8209580B1 (en) | 2006-05-08 | 2012-06-26 | Marvell International Ltd. | Error correction coding for varying signal-to-noise ratio channels |
US7966547B2 (en) * | 2007-07-02 | 2011-06-21 | International Business Machines Corporation | Multi-bit error correction scheme in multi-level memory storage system |
US7747903B2 (en) | 2007-07-09 | 2010-06-29 | Micron Technology, Inc. | Error correction for memory |
TWI382422B (en) * | 2008-07-11 | 2013-01-11 | Genesys Logic Inc | Storage device for refreshing data pages of flash memory based on error correction code and method for the same |
KR20100012605A (en) * | 2008-07-29 | 2010-02-08 | 삼성전자주식회사 | Non-volatile memory device and method for program using ecc |
US8555143B2 (en) * | 2008-12-22 | 2013-10-08 | Industrial Technology Research Institute | Flash memory controller and the method thereof |
US8386883B2 (en) * | 2009-02-24 | 2013-02-26 | International Business Machines Corporation | Lengthening life of a limited life memory |
US20110035540A1 (en) * | 2009-08-10 | 2011-02-10 | Adtron, Inc. | Flash blade system architecture and method |
US8077515B2 (en) | 2009-08-25 | 2011-12-13 | Micron Technology, Inc. | Methods, devices, and systems for dealing with threshold voltage change in memory devices |
CN102034552A (en) * | 2009-09-25 | 2011-04-27 | 威刚科技(苏州)有限公司 | Memory device and data processing method applied by same |
US8271697B2 (en) | 2009-09-29 | 2012-09-18 | Micron Technology, Inc. | State change in systems having devices coupled in a chained configuration |
US8589766B2 (en) * | 2010-02-24 | 2013-11-19 | Apple Inc. | Codeword remapping schemes for non-volatile memories |
JP5017407B2 (en) * | 2010-03-24 | 2012-09-05 | 株式会社東芝 | Semiconductor memory device |
US8429391B2 (en) | 2010-04-16 | 2013-04-23 | Micron Technology, Inc. | Boot partitions in memory devices and systems |
US8451664B2 (en) | 2010-05-12 | 2013-05-28 | Micron Technology, Inc. | Determining and using soft data in memory devices and systems |
US8990660B2 (en) * | 2010-09-13 | 2015-03-24 | Freescale Semiconductor, Inc. | Data processing system having end-to-end error correction and method therefor |
CN102419734B (en) * | 2010-09-27 | 2016-05-11 | 北京中星微电子有限公司 | A kind of method of data storage and device |
US8825945B2 (en) * | 2011-01-31 | 2014-09-02 | Marvell World Trade Ltd. | Mapping different portions of data to different pages of multi-level non-volatile memory |
US8909851B2 (en) | 2011-02-08 | 2014-12-09 | SMART Storage Systems, Inc. | Storage control system with change logging mechanism and method of operation thereof |
US8484542B2 (en) * | 2011-02-08 | 2013-07-09 | Sandisk Technologies Inc. | Data recovery using additional error correction coding data |
US8935466B2 (en) * | 2011-03-28 | 2015-01-13 | SMART Storage Systems, Inc. | Data storage system with non-volatile memory and method of operation thereof |
CN102279803A (en) * | 2011-04-13 | 2011-12-14 | 西安交通大学 | Spare area distribution method for enhancing storage reliability of multilayer unit NAND-Flash |
US8732557B2 (en) * | 2011-05-31 | 2014-05-20 | Micron Technology, Inc. | Data protection across multiple memory blocks |
US8990657B2 (en) | 2011-06-14 | 2015-03-24 | Freescale Semiconductor, Inc. | Selective masking for error correction |
US9098399B2 (en) | 2011-08-31 | 2015-08-04 | SMART Storage Systems, Inc. | Electronic system with storage management mechanism and method of operation thereof |
US9021231B2 (en) | 2011-09-02 | 2015-04-28 | SMART Storage Systems, Inc. | Storage control system with write amplification control mechanism and method of operation thereof |
US9063844B2 (en) | 2011-09-02 | 2015-06-23 | SMART Storage Systems, Inc. | Non-volatile memory management system with time measure mechanism and method of operation thereof |
US9021319B2 (en) | 2011-09-02 | 2015-04-28 | SMART Storage Systems, Inc. | Non-volatile memory management system with load leveling and method of operation thereof |
US9588883B2 (en) * | 2011-09-23 | 2017-03-07 | Conversant Intellectual Property Management Inc. | Flash memory system |
US9239781B2 (en) | 2012-02-07 | 2016-01-19 | SMART Storage Systems, Inc. | Storage control system with erase block mechanism and method of operation thereof |
US8954825B2 (en) * | 2012-03-06 | 2015-02-10 | Micron Technology, Inc. | Apparatuses and methods including error correction code organization |
US9298252B2 (en) | 2012-04-17 | 2016-03-29 | SMART Storage Systems, Inc. | Storage control system with power down mechanism and method of operation thereof |
WO2013180714A1 (en) * | 2012-05-31 | 2013-12-05 | Hewlett-Packard Development Company, L.P. | Local error detection and global error correction |
US8949689B2 (en) | 2012-06-11 | 2015-02-03 | SMART Storage Systems, Inc. | Storage control system with data management mechanism and method of operation thereof |
KR101979734B1 (en) | 2012-08-07 | 2019-05-17 | 삼성전자 주식회사 | Method for controlling a read voltage of memory device and data read operating method using method thereof |
KR101419335B1 (en) * | 2012-11-23 | 2014-07-16 | 한양대학교 산학협력단 | Apparatus and method for page unit clustering of multi level cell flash memory |
US9671962B2 (en) | 2012-11-30 | 2017-06-06 | Sandisk Technologies Llc | Storage control system with data management mechanism of parity and method of operation thereof |
US9059736B2 (en) * | 2012-12-03 | 2015-06-16 | Western Digital Technologies, Inc. | Methods, solid state drive controllers and data storage devices having a runtime variable raid protection scheme |
US9123445B2 (en) | 2013-01-22 | 2015-09-01 | SMART Storage Systems, Inc. | Storage control system with data management mechanism and method of operation thereof |
EP2951834A4 (en) | 2013-01-31 | 2016-08-31 | Hewlett Packard Entpr Dev Lp | Non-volatile multi-level-cell memory with decoupled bits for higher performance and energy efficiency |
US9214965B2 (en) | 2013-02-20 | 2015-12-15 | Sandisk Enterprise Ip Llc | Method and system for improving data integrity in non-volatile storage |
US9329928B2 (en) | 2013-02-20 | 2016-05-03 | Sandisk Enterprise IP LLC. | Bandwidth optimization in a non-volatile memory system |
US9183137B2 (en) | 2013-02-27 | 2015-11-10 | SMART Storage Systems, Inc. | Storage control system with data management mechanism and method of operation thereof |
US9470720B2 (en) | 2013-03-08 | 2016-10-18 | Sandisk Technologies Llc | Test system with localized heating and method of manufacture thereof |
US9043780B2 (en) | 2013-03-27 | 2015-05-26 | SMART Storage Systems, Inc. | Electronic system with system modification control mechanism and method of operation thereof |
US9170941B2 (en) | 2013-04-05 | 2015-10-27 | Sandisk Enterprises IP LLC | Data hardening in a storage system |
US10049037B2 (en) | 2013-04-05 | 2018-08-14 | Sandisk Enterprise Ip Llc | Data management in a storage system |
US9543025B2 (en) | 2013-04-11 | 2017-01-10 | Sandisk Technologies Llc | Storage control system with power-off time estimation mechanism and method of operation thereof |
US10546648B2 (en) | 2013-04-12 | 2020-01-28 | Sandisk Technologies Llc | Storage control system with data management mechanism and method of operation thereof |
TWI502601B (en) * | 2013-04-24 | 2015-10-01 | Ind Tech Res Inst | Hybrid error repair method and memory apparatus thereof |
US9898056B2 (en) | 2013-06-19 | 2018-02-20 | Sandisk Technologies Llc | Electronic assembly with thermal channel and method of manufacture thereof |
US9313874B2 (en) | 2013-06-19 | 2016-04-12 | SMART Storage Systems, Inc. | Electronic system with heat extraction and method of manufacture thereof |
US9244519B1 (en) | 2013-06-25 | 2016-01-26 | Smart Storage Systems. Inc. | Storage system with data transfer rate adjustment for power throttling |
US9367353B1 (en) | 2013-06-25 | 2016-06-14 | Sandisk Technologies Inc. | Storage control system with power throttling mechanism and method of operation thereof |
US9146850B2 (en) | 2013-08-01 | 2015-09-29 | SMART Storage Systems, Inc. | Data storage system with dynamic read threshold mechanism and method of operation thereof |
US9431113B2 (en) | 2013-08-07 | 2016-08-30 | Sandisk Technologies Llc | Data storage system with dynamic erase block grouping mechanism and method of operation thereof |
US9361222B2 (en) | 2013-08-07 | 2016-06-07 | SMART Storage Systems, Inc. | Electronic system with storage drive life estimation mechanism and method of operation thereof |
US9448946B2 (en) | 2013-08-07 | 2016-09-20 | Sandisk Technologies Llc | Data storage system with stale data mechanism and method of operation thereof |
US9152555B2 (en) | 2013-11-15 | 2015-10-06 | Sandisk Enterprise IP LLC. | Data management with modular erase in a data storage system |
US20150161001A1 (en) * | 2013-12-06 | 2015-06-11 | Western Digital Technologies, Inc. | Misprogramming prevention in solid-state memory |
US10417090B2 (en) * | 2013-12-23 | 2019-09-17 | Cnex Labs, Inc. | Computing system with data protection mechanism and method of operation thereof |
TWI570549B (en) * | 2014-03-01 | 2017-02-11 | 希耐克斯實驗室公司 | Computing system with data protection mechanism and method of operation thereof |
US9405624B2 (en) * | 2014-06-19 | 2016-08-02 | Seagate Technology Llc | On-die error detection and correction during multi-step programming |
US9213602B1 (en) * | 2014-06-23 | 2015-12-15 | Seagate Technology Llc | Write mapping to mitigate hard errors via soft-decision decoding |
US9558066B2 (en) * | 2014-09-26 | 2017-01-31 | Intel Corporation | Exchanging ECC metadata between memory and host system |
TWI556254B (en) * | 2014-10-14 | 2016-11-01 | 慧榮科技股份有限公司 | Data storage device and data accessing method thereof |
TWI555028B (en) * | 2015-02-12 | 2016-10-21 | 慧榮科技股份有限公司 | Data storage device and error correction method |
US9690656B2 (en) * | 2015-02-27 | 2017-06-27 | Microsoft Technology Licensing, Llc | Data encoding on single-level and variable multi-level cell storage |
US9786386B2 (en) * | 2015-02-27 | 2017-10-10 | Microsoft Technology Licensing, Llc | Dynamic approximate storage for custom applications |
US10303622B2 (en) * | 2015-03-06 | 2019-05-28 | Hewlett Packard Enterprise Development Lp | Data write to subset of memory devices |
CN106297881B (en) * | 2015-05-27 | 2020-09-11 | 旺宏电子股份有限公司 | Health management of non-volatile memory |
US9679661B1 (en) | 2016-06-28 | 2017-06-13 | Sandisk Technologies Llc | Non-volatile storage system with self-test for read performance enhancement feature setup |
DE102016115272A1 (en) * | 2016-08-17 | 2018-02-22 | Infineon Technologies Ag | MEMORY WITH DIFFERENT RELIABILITIES |
US9672940B1 (en) | 2016-08-18 | 2017-06-06 | Sandisk Technologies Llc | Non-volatile memory with fast read process |
US10613924B2 (en) * | 2017-05-17 | 2020-04-07 | Rambus Inc. | Energy-efficient error-correction-detection storage |
GB201710839D0 (en) * | 2017-07-05 | 2017-08-16 | Irdeto Bv | Data protection |
US10719398B1 (en) * | 2017-07-18 | 2020-07-21 | EMC IP Holding Company LLC | Resilience of data storage systems by managing partial failures of solid state drives |
US10269422B2 (en) * | 2017-09-08 | 2019-04-23 | Cnex Labs, Inc. | Storage system with data reliability mechanism and method of operation thereof |
US11190217B2 (en) | 2018-08-23 | 2021-11-30 | Phison Electronics Corp. | Data writing method, memory controlling circuit unit and memory storage device |
TWI658463B (en) * | 2018-08-23 | 2019-05-01 | 群聯電子股份有限公司 | Data access method,memory control circuit unit and memory storage device |
CN109446157B (en) * | 2018-10-18 | 2021-10-29 | 武汉虹旭信息技术有限责任公司 | A data format checking system and method based on formatted data |
DE102020120719A1 (en) * | 2020-08-05 | 2022-02-10 | Infineon Technologies Ag | ACCESSING A STORAGE |
US11798647B2 (en) | 2022-02-28 | 2023-10-24 | Micron Technology, Inc. | Apparatus and methods for determining memory cell data states |
CN119068968B (en) * | 2024-11-05 | 2025-01-17 | 湖北长江万润半导体技术有限公司 | A method for quickly testing flash memory using flash memory weak pages and their distribution types |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020048202A1 (en) * | 2000-10-25 | 2002-04-25 | Fujitsu Limited | Method of managing a defect in a flash memory |
WO2006013529A1 (en) * | 2004-08-02 | 2006-02-09 | Koninklijke Philips Electronics N.V. | Data storage and replay apparatus |
WO2007043042A2 (en) * | 2005-10-13 | 2007-04-19 | Ramot At Tel-Aviv University Ltd. | Method of error correction in mbc flash memory |
Family Cites Families (34)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6151253A (en) * | 1984-08-20 | 1986-03-13 | Nec Corp | Memory error correctng circuit |
KR900002664B1 (en) * | 1985-08-16 | 1990-04-21 | 가부시끼가이샤 히다찌세이사꾸쇼 | Serial Data Storage Semiconductor Memory |
US5043940A (en) * | 1988-06-08 | 1991-08-27 | Eliyahou Harari | Flash EEPROM memory systems having multistate storage cells |
JPH0387000A (en) * | 1989-08-30 | 1991-04-11 | Mitsubishi Electric Corp | Semiconductor memory device |
US5276834A (en) * | 1990-12-04 | 1994-01-04 | Micron Technology, Inc. | Spare memory arrangement |
US5218569A (en) * | 1991-02-08 | 1993-06-08 | Banks Gerald J | Electrically alterable non-volatile memory with n-bits per memory cell |
US5513192A (en) * | 1992-08-28 | 1996-04-30 | Sun Microsystems, Inc. | Fault tolerant disk drive system with error detection and correction |
US5450354A (en) * | 1992-08-31 | 1995-09-12 | Nippon Steel Corporation | Non-volatile semiconductor memory device detachable deterioration of memory cells |
JP3999822B2 (en) * | 1993-12-28 | 2007-10-31 | 株式会社東芝 | Storage system |
US5452473A (en) | 1994-02-28 | 1995-09-19 | Qualcomm Incorporated | Reverse link, transmit power correction and limitation in a radiotelephone system |
US5450363A (en) * | 1994-06-02 | 1995-09-12 | Intel Corporation | Gray coding for a multilevel cell memory system |
US5475693A (en) * | 1994-12-27 | 1995-12-12 | Intel Corporation | Error management processes for flash EEPROM memory arrays |
US5513137A (en) * | 1995-02-23 | 1996-04-30 | Micron Technology, Inc. | Flash memory having transistor redundancy |
US5559742A (en) * | 1995-02-23 | 1996-09-24 | Micron Technology, Inc. | Flash memory having transistor redundancy |
US5524096A (en) * | 1995-06-29 | 1996-06-04 | Micron Quantum Devices, Inc. | Circuit for generating a delayed standby signal in response to an external standby command |
US5557576A (en) * | 1995-07-28 | 1996-09-17 | Micron Quantum Devices, Inc. | Method and apparatus for monitoring illegal conditions in a nonvolatile memory circuit |
US5729489A (en) * | 1995-12-14 | 1998-03-17 | Intel Corporation | Programming flash memory using predictive learning methods |
US5754567A (en) * | 1996-10-15 | 1998-05-19 | Micron Quantum Devices, Inc. | Write reduction in flash memory systems through ECC usage |
US5864569A (en) * | 1996-10-18 | 1999-01-26 | Micron Technology, Inc. | Method and apparatus for performing error correction on data read from a multistate memory |
CN1306337C (en) * | 1998-12-10 | 2007-03-21 | Az电子材料日本株式会社 | Positively photosensitive resin composition |
US6784889B1 (en) * | 2000-12-13 | 2004-08-31 | Micron Technology, Inc. | Memory system and method for improved utilization of read and write bandwidth of a graphics processing system |
US6741253B2 (en) * | 2001-10-09 | 2004-05-25 | Micron Technology, Inc. | Embedded memory system and method including data error correction |
US8412879B2 (en) * | 2002-10-28 | 2013-04-02 | Sandisk Technologies Inc. | Hybrid implementation for error correction codes within a non-volatile memory system |
US7023735B2 (en) * | 2003-06-17 | 2006-04-04 | Ramot At Tel-Aviv University Ltd. | Methods of increasing the reliability of a flash memory |
US7019998B2 (en) * | 2003-09-09 | 2006-03-28 | Silicon Storage Technology, Inc. | Unified multilevel cell memory |
US7389465B2 (en) * | 2004-01-30 | 2008-06-17 | Micron Technology, Inc. | Error detection and correction scheme for a memory device |
US7099221B2 (en) * | 2004-05-06 | 2006-08-29 | Micron Technology, Inc. | Memory controller method and system compensating for memory cell data losses |
US7322002B2 (en) * | 2004-05-26 | 2008-01-22 | Micron Technology, Inc. | Erasure pointer error correction |
JP4457041B2 (en) * | 2005-05-20 | 2010-04-28 | 株式会社日立製作所 | Verify processing method and optical disc apparatus |
US8055833B2 (en) * | 2006-10-05 | 2011-11-08 | Google Inc. | System and method for increasing capacity, performance, and flexibility of flash storage |
US7502254B2 (en) * | 2006-04-11 | 2009-03-10 | Sandisk Il Ltd | Method for generating soft bits in flash memories |
US7904780B2 (en) * | 2006-11-03 | 2011-03-08 | Sandisk Corporation | Methods of modulating error correction coding |
US8055988B2 (en) * | 2007-03-30 | 2011-11-08 | International Business Machines Corporation | Multi-bit memory error detection and correction system and method |
US7747903B2 (en) | 2007-07-09 | 2010-06-29 | Micron Technology, Inc. | Error correction for memory |
-
2007
- 2007-07-09 US US11/774,825 patent/US7747903B2/en active Active
-
2008
- 2008-07-09 KR KR1020107002788A patent/KR101371830B1/en active Active
- 2008-07-09 CN CN200880102644.4A patent/CN101779194B/en active Active
- 2008-07-09 WO PCT/US2008/008436 patent/WO2009009076A2/en active Application Filing
- 2008-07-09 TW TW097126019A patent/TWI394167B/en active
-
2010
- 2010-06-25 US US12/823,716 patent/US7996727B2/en active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020048202A1 (en) * | 2000-10-25 | 2002-04-25 | Fujitsu Limited | Method of managing a defect in a flash memory |
WO2006013529A1 (en) * | 2004-08-02 | 2006-02-09 | Koninklijke Philips Electronics N.V. | Data storage and replay apparatus |
WO2007043042A2 (en) * | 2005-10-13 | 2007-04-19 | Ramot At Tel-Aviv University Ltd. | Method of error correction in mbc flash memory |
Also Published As
Publication number | Publication date |
---|---|
US7996727B2 (en) | 2011-08-09 |
CN101779194B (en) | 2013-06-05 |
WO2009009076A2 (en) | 2009-01-15 |
TWI394167B (en) | 2013-04-21 |
KR101371830B1 (en) | 2014-03-07 |
KR20100046178A (en) | 2010-05-06 |
WO2009009076A9 (en) | 2010-02-25 |
US20100262890A1 (en) | 2010-10-14 |
TW200907989A (en) | 2009-02-16 |
US20090019321A1 (en) | 2009-01-15 |
US7747903B2 (en) | 2010-06-29 |
CN101779194A (en) | 2010-07-14 |
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