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WO2009001699A1 - ２次元フォトニック結晶面発光レーザ - Google Patents

２次元フォトニック結晶面発光レーザ Download PDF

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Publication number
WO2009001699A1
WO2009001699A1 PCT/JP2008/060954 JP2008060954W WO2009001699A1 WO 2009001699 A1 WO2009001699 A1 WO 2009001699A1 JP 2008060954 W JP2008060954 W JP 2008060954W WO 2009001699 A1 WO2009001699 A1 WO 2009001699A1
Authority
WO
WIPO (PCT)
Prior art keywords
photonic crystal
dimensional photonic
light
region
emission laser
Prior art date
Application number
PCT/JP2008/060954
Other languages
English (en)
French (fr)
Inventor
Mitsuru Yokoyama
Original Assignee
Konica Minolta Holdings, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Konica Minolta Holdings, Inc. filed Critical Konica Minolta Holdings, Inc.
Priority to US12/666,389 priority Critical patent/US7991036B2/en
Priority to EP08765637.7A priority patent/EP2166627B1/en
Priority to JP2008544682A priority patent/JP4241905B2/ja
Publication of WO2009001699A1 publication Critical patent/WO2009001699A1/ja

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/11—Comprising a photonic bandgap structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/185—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/18—Semiconductor lasers with special structural design for influencing the near- or far-field
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/20—Lasers with a special output beam profile or cross-section, e.g. non-Gaussian
    • H01S2301/203—Lasers with a special output beam profile or cross-section, e.g. non-Gaussian with at least one hole in the intensity distribution, e.g. annular or doughnut mode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04252—Electrodes, e.g. characterised by the structure characterised by the material
    • H01S5/04253—Electrodes, e.g. characterised by the structure characterised by the material having specific optical properties, e.g. transparent electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1071—Ring-lasers

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

　本発明の２次元フォトニック結晶面発光レーザでは、２次元フォトニック結晶領域と光反射領域とを備えた、活性層で発生する光の波長を選択する２次元フォトニック結晶が備えられ、２次元フォトニック結晶領域から漏れ出て光反射領域の反射面で反射した反射光が２次元フォトニック結晶領域内へ戻った場合に、この反射光が伝播する方向に元々ある定在波に対し、その共振状態を乱すことなく合成されるように、光反射領域が設けられる。
PCT/JP2008/060954 2007-06-28 2008-06-16 ２次元フォトニック結晶面発光レーザ WO2009001699A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
US12/666,389 US7991036B2 (en) 2007-06-28 2008-06-16 Two-dimensional photonic crystal plane emission laser
EP08765637.7A EP2166627B1 (en) 2007-06-28 2008-06-16 Two-dimensional photonic crystal plane emission laser
JP2008544682A JP4241905B2 (ja) 2007-06-28 2008-06-16 ２次元フォトニック結晶面発光レーザ

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007170399 2007-06-28
JP2007-170399 2007-06-28

Publications (1)

Publication Number Publication Date
WO2009001699A1 true WO2009001699A1 (ja) 2008-12-31

Family

ID=40185517

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/060954 WO2009001699A1 (ja) 2007-06-28 2008-06-16 ２次元フォトニック結晶面発光レーザ

Country Status (4)

Country Link
US (1) US7991036B2 (ja)
EP (1) EP2166627B1 (ja)
JP (1) JP4241905B2 (ja)
WO (1) WO2009001699A1 (ja)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6358313A (ja) * 1986-08-29 1988-03-14 Koputeitsuku:Kk ソフト・フオ−カス・レンズ
US7991036B2 (en) 2007-06-28 2011-08-02 Konica Minolta Holdings, Inc. Two-dimensional photonic crystal plane emission laser
WO2014136653A1 (ja) * 2013-03-04 2014-09-12 国立大学法人京都大学 半導体レーザ素子
JP2018093022A (ja) * 2016-12-01 2018-06-14 株式会社東芝 フォトニック結晶内蔵基板およびその製造方法、並びに面発光量子カスケードレーザ
WO2024114803A1 (zh) * 2022-12-02 2024-06-06 微源光子(深圳)科技有限公司 光子晶体激光器及其制备方法

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4941127B2 (ja) * 2007-06-28 2012-05-30 コニカミノルタホールディングス株式会社 光共振器
US10490979B2 (en) 2017-12-27 2019-11-26 Kabushiki Kaisha Toshiba Substrate including photonic crystal and method for manufacturing the same, and surface emitting quantum cascade laser

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000332351A (ja) 1999-05-21 2000-11-30 Susumu Noda 半導体発光デバイスおよび半導体発光デバイスの製造方法
JP2001308457A (ja) 2000-04-24 2001-11-02 Matsushita Electric Ind Co Ltd 半導体面発光素子
JP2003273456A (ja) 2002-03-14 2003-09-26 Japan Science & Technology Corp ２次元フォトニック結晶面発光レーザ
JP2006332595A (ja) * 2005-04-28 2006-12-07 Canon Inc 垂直共振器型面発光レーザ装置
WO2007119273A1 (ja) * 2006-03-20 2007-10-25 Kyoto University ２次元フォトニック結晶面発光レーザ光源

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002353563A (ja) * 2001-05-24 2002-12-06 Rohm Co Ltd 半導体発光素子およびその製法
JP3561244B2 (ja) * 2001-07-05 2004-09-02 独立行政法人 科学技術振興機構 二次元フォトニック結晶面発光レーザ
WO2005086302A1 (ja) * 2004-03-05 2005-09-15 Kyoto University ２次元フォトニック結晶面発光レーザ光源
JP4027393B2 (ja) * 2005-04-28 2007-12-26 キヤノン株式会社 面発光レーザ
US7483466B2 (en) * 2005-04-28 2009-01-27 Canon Kabushiki Kaisha Vertical cavity surface emitting laser device
JPWO2007029538A1 (ja) * 2005-09-02 2009-03-19 国立大学法人京都大学 ２次元フォトニック結晶面発光レーザ光源
JP2007258260A (ja) * 2006-03-20 2007-10-04 Kyoto Univ ２次元フォトニック結晶面発光レーザ
JP5138898B2 (ja) * 2006-03-31 2013-02-06 国立大学法人京都大学 ２次元フォトニック結晶面発光レーザ光源
WO2009001699A1 (ja) 2007-06-28 2008-12-31 Konica Minolta Holdings, Inc. ２次元フォトニック結晶面発光レーザ

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000332351A (ja) 1999-05-21 2000-11-30 Susumu Noda 半導体発光デバイスおよび半導体発光デバイスの製造方法
JP2001308457A (ja) 2000-04-24 2001-11-02 Matsushita Electric Ind Co Ltd 半導体面発光素子
JP2003273456A (ja) 2002-03-14 2003-09-26 Japan Science & Technology Corp ２次元フォトニック結晶面発光レーザ
JP2006332595A (ja) * 2005-04-28 2006-12-07 Canon Inc 垂直共振器型面発光レーザ装置
WO2007119273A1 (ja) * 2006-03-20 2007-10-25 Kyoto University ２次元フォトニック結晶面発光レーザ光源

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP2166627A4

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6358313A (ja) * 1986-08-29 1988-03-14 Koputeitsuku:Kk ソフト・フオ−カス・レンズ
US7991036B2 (en) 2007-06-28 2011-08-02 Konica Minolta Holdings, Inc. Two-dimensional photonic crystal plane emission laser
WO2014136653A1 (ja) * 2013-03-04 2014-09-12 国立大学法人京都大学 半導体レーザ素子
JP2014197659A (ja) * 2013-03-04 2014-10-16 国立大学法人京都大学 半導体レーザ素子
US9583914B2 (en) 2013-03-04 2017-02-28 Kyoto University Semiconductor laser element
JP2018093022A (ja) * 2016-12-01 2018-06-14 株式会社東芝 フォトニック結晶内蔵基板およびその製造方法、並びに面発光量子カスケードレーザ
WO2024114803A1 (zh) * 2022-12-02 2024-06-06 微源光子(深圳)科技有限公司 光子晶体激光器及其制备方法

Also Published As

Publication number Publication date
EP2166627B1 (en) 2018-08-15
JP4241905B2 (ja) 2009-03-18
EP2166627A1 (en) 2010-03-24
JPWO2009001699A1 (ja) 2010-08-26
US20100172389A1 (en) 2010-07-08
US7991036B2 (en) 2011-08-02
EP2166627A4 (en) 2013-08-07

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