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WO2009001693A1 - アモルファス複合酸化膜、結晶質複合酸化膜、アモルファス複合酸化膜の製造方法、結晶質複合酸化膜の製造方法および複合酸化物焼結体 - Google Patents

アモルファス複合酸化膜、結晶質複合酸化膜、アモルファス複合酸化膜の製造方法、結晶質複合酸化膜の製造方法および複合酸化物焼結体 Download PDF

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Publication number
WO2009001693A1
WO2009001693A1 PCT/JP2008/060861 JP2008060861W WO2009001693A1 WO 2009001693 A1 WO2009001693 A1 WO 2009001693A1 JP 2008060861 W JP2008060861 W JP 2008060861W WO 2009001693 A1 WO2009001693 A1 WO 2009001693A1
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Prior art keywords
composite oxide
oxide film
film
producing
amorphous
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PCT/JP2008/060861
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English (en)
French (fr)
Inventor
Masakatsu Ikisawa
Masataka Yahagi
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Nippon Mining & Metals Co., Ltd.
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Publication date
Application filed by Nippon Mining & Metals Co., Ltd. filed Critical Nippon Mining & Metals Co., Ltd.
Priority to KR1020147006910A priority Critical patent/KR20140041950A/ko
Priority to CN200880021931A priority patent/CN101688288A/zh
Priority to JP2009520462A priority patent/JP4885274B2/ja
Priority to US12/666,306 priority patent/US8252206B2/en
Priority to KR1020167012721A priority patent/KR20160063403A/ko
Publication of WO2009001693A1 publication Critical patent/WO2009001693A1/ja

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Abstract

　実質的にインジウム、スズ、マグネシウムおよび酸素からなり、スズがSn / (In + Sn + Mg )の原子数比で5～15％の割合、マグネシウムが、Mg / ( In + Sn + Mg )の原子数比で0.1～2.0％の割合で含有されており、残部がインジウムと酸素からなるアモルファス膜であって、かつ、260°C以下の温度でアニールすることによって、膜が結晶化して、膜の抵抗率が0.4mΩ以下となることを特徴とする膜。 　フラットパネルディスプレイ用表示電極等に用いられるITO系薄膜を、基板無加熱で、成膜時に水添加することなく、スパッタ成膜して、非晶質のITO系膜が得られるとともに、当該ITO系膜が、260°C以下というあまり高温でないアニールで結晶化して、結晶化後の抵抗率が低くなる特性を有するITO系膜、該膜の製造方法および該膜製造のための焼結体の提供を目的とする。
PCT/JP2008/060861 2007-06-26 2008-06-13 アモルファス複合酸化膜、結晶質複合酸化膜、アモルファス複合酸化膜の製造方法、結晶質複合酸化膜の製造方法および複合酸化物焼結体 WO2009001693A1 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
KR1020147006910A KR20140041950A (ko) 2007-06-26 2008-06-13 아모르퍼스 복합 산화막, 결정질 복합 산화막, 아모르퍼스 복합 산화막의 제조 방법, 결정질 복합 산화막의 제조 방법 및 복합 산화물 소결체
CN200880021931A CN101688288A (zh) 2007-06-26 2008-06-13 非晶质复合氧化膜、结晶质复合氧化膜、非晶质复合氧化膜的制造方法、结晶质复合氧化膜的制造方法及复合氧化物烧结体
JP2009520462A JP4885274B2 (ja) 2007-06-26 2008-06-13 アモルファス複合酸化膜、結晶質複合酸化膜、アモルファス複合酸化膜の製造方法および結晶質複合酸化膜の製造方法
US12/666,306 US8252206B2 (en) 2007-06-26 2008-06-13 Amorphous film of composite oxide, crystalline film of composite oxide, method of producing said films and sintered compact of composite oxide
KR1020167012721A KR20160063403A (ko) 2007-06-26 2008-06-13 아모르퍼스 복합 산화막, 결정질 복합 산화막, 아모르퍼스 복합 산화막의 제조 방법, 결정질 복합 산화막의 제조 방법 및 복합 산화물 소결체

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-167961 2007-06-26
JP2007167961 2007-06-26

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WO2009001693A1 true WO2009001693A1 (ja) 2008-12-31

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PCT/JP2008/060861 WO2009001693A1 (ja) 2007-06-26 2008-06-13 アモルファス複合酸化膜、結晶質複合酸化膜、アモルファス複合酸化膜の製造方法、結晶質複合酸化膜の製造方法および複合酸化物焼結体

Country Status (6)

Country Link
US (1) US8252206B2 (ja)
JP (1) JP4885274B2 (ja)
KR (4) KR20100012040A (ja)
CN (2) CN105063555B (ja)
TW (1) TWI395826B (ja)
WO (1) WO2009001693A1 (ja)

Cited By (2)

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WO2012157699A1 (ja) 2011-05-18 2012-11-22 味の素株式会社 動物用免疫賦活剤、それを含む飼料及びその製造方法
CN104952965A (zh) * 2014-03-24 2015-09-30 三菱电机株式会社 光电变换元件以及光电变换元件的制造方法

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US8277694B2 (en) 2007-07-13 2012-10-02 Jx Nippon Mining & Metals Corporation Sintered compact of composite oxide, amorphous film of composite oxide, process for producing said film, crystalline film of composite oxide and process for producing said film
WO2010140548A1 (ja) 2009-06-05 2010-12-09 Jx日鉱日石金属株式会社 酸化物焼結体、その製造方法及び酸化物焼結体製造用原料粉末
CN102666429B (zh) 2009-10-26 2015-05-06 吉坤日矿日石金属株式会社 氧化铟系烧结体及氧化铟系透明导电膜
JP5679925B2 (ja) * 2010-07-06 2015-03-04 日東電工株式会社 透明導電性フィルムの製造方法
KR20150059798A (ko) * 2010-07-06 2015-06-02 닛토덴코 가부시키가이샤 투명 도전성 필름 및 그 제조 방법
US20120213949A1 (en) * 2011-02-18 2012-08-23 Chien-Min Weng Method for producing indium tin oxide layer with controlled surface resistance
CN102324271A (zh) * 2011-10-14 2012-01-18 南昌欧菲光科技有限公司 一种结晶型ito透明导电薄膜及其制备方法
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