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WO2009089499A3 - Système à faisceaux multiples - Google Patents

Système à faisceaux multiples Download PDF

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Publication number
WO2009089499A3
WO2009089499A3 PCT/US2009/030671 US2009030671W WO2009089499A3 WO 2009089499 A3 WO2009089499 A3 WO 2009089499A3 US 2009030671 W US2009030671 W US 2009030671W WO 2009089499 A3 WO2009089499 A3 WO 2009089499A3
Authority
WO
WIPO (PCT)
Prior art keywords
sample
multibeam system
beam column
produces
column
Prior art date
Application number
PCT/US2009/030671
Other languages
English (en)
Other versions
WO2009089499A2 (fr
WO2009089499A4 (fr
Inventor
Mark W. Utlaut
Noel Smith
Paul P. Tesch
Tom Miller
David H. Narum
Craig Henry
Liang Hong
Stacey Stone
David Tuggle
Original Assignee
Fei Company
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fei Company filed Critical Fei Company
Priority to US12/812,221 priority Critical patent/US20110163068A1/en
Publication of WO2009089499A2 publication Critical patent/WO2009089499A2/fr
Publication of WO2009089499A3 publication Critical patent/WO2009089499A3/fr
Publication of WO2009089499A4 publication Critical patent/WO2009089499A4/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0279—Ionlithographic processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
    • G03F1/84—Inspecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/22—Optical, image processing or photographic arrangements associated with the tube
    • H01J37/226—Optical arrangements for illuminating the object; optical arrangements for collecting light from the object
    • H01J37/228—Optical arrangements for illuminating the object; optical arrangements for collecting light from the object whereby illumination or light collection take place in the same area of the discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/3002—Details
    • H01J37/3007—Electron or ion-optical systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching
    • H01J37/3056—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching for microworking, e. g. etching of gratings or trimming of electrical components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/2633—Bombardment with radiation with high-energy radiation for etching, e.g. sputteretching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Drying Of Semiconductors (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Welding Or Cutting Using Electron Beams (AREA)
  • Plasma Technology (AREA)
  • Electron Sources, Ion Sources (AREA)

Abstract

Système à faisceaux multiples dans lequel un faisceau de particules chargé et un ou plusieurs faisceaux supplémentaires peuvent être dirigés sur la cible dans une chambre à vide unique. Une première colonne de faisceau produit de préférence un faisceau pour traitement rapide, et une deuxième colonne de faisceau produit un faisceau pour traitement plus précis. Une troisième colonne de faisceau peut être utilisée pour produire un faisceau utile pour la formation d'une image de l'échantillon tout en produisant peu ou pas de modification dans l'échantillon.
PCT/US2009/030671 2008-01-09 2009-01-09 Système à faisceaux multiples WO2009089499A2 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US12/812,221 US20110163068A1 (en) 2008-01-09 2009-01-09 Multibeam System

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US2010208P 2008-01-09 2008-01-09
US61/020,102 2008-01-09

Publications (3)

Publication Number Publication Date
WO2009089499A2 WO2009089499A2 (fr) 2009-07-16
WO2009089499A3 true WO2009089499A3 (fr) 2009-10-08
WO2009089499A4 WO2009089499A4 (fr) 2009-12-03

Family

ID=40853782

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2009/030671 WO2009089499A2 (fr) 2008-01-09 2009-01-09 Système à faisceaux multiples

Country Status (2)

Country Link
US (1) US20110163068A1 (fr)
WO (1) WO2009089499A2 (fr)

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EP1501115B1 (fr) 2003-07-14 2009-07-01 FEI Company Système à deux faisceaux
US10493559B2 (en) 2008-07-09 2019-12-03 Fei Company Method and apparatus for laser machining
US8168961B2 (en) 2008-11-26 2012-05-01 Fei Company Charged particle beam masking for laser ablation micromachining
EP2233907A1 (fr) * 2009-03-27 2010-09-29 FEI Company Formation d'une image pendant le fraisage d'une pièce de travail
JP5702552B2 (ja) 2009-05-28 2015-04-15 エフ イー アイ カンパニＦｅｉ Ｃｏｍｐａｎｙ デュアルビームシステムの制御方法
US8524139B2 (en) * 2009-08-10 2013-09-03 FEI Compay Gas-assisted laser ablation
US8253118B2 (en) * 2009-10-14 2012-08-28 Fei Company Charged particle beam system having multiple user-selectable operating modes
US8642974B2 (en) 2009-12-30 2014-02-04 Fei Company Encapsulation of electrodes in solid media for use in conjunction with fluid high voltage isolation
EP2341525B1 (fr) 2009-12-30 2013-10-23 FEI Company Source de plasma pour système de faisceau à particules chargées
CN102812533B (zh) * 2010-04-07 2015-12-02 Fei公司 组合激光器和带电粒子束系统
DE102010024625A1 (de) * 2010-06-22 2011-12-22 Carl Zeiss Nts Gmbh Verfahren zum Bearbeiten eines Objekts
US10112257B1 (en) * 2010-07-09 2018-10-30 General Lasertronics Corporation Coating ablating apparatus with coating removal detection
US8211717B1 (en) 2011-01-26 2012-07-03 International Business Machines Corporation SEM repair for sub-optimal features
EP2492950B1 (fr) 2011-02-25 2018-04-11 FEI Company Procédé de commutation rapide entre un mode à courant élevé et un mode à faible courant dans un système à faisceau de particules chargées
US20130098871A1 (en) 2011-10-19 2013-04-25 Fei Company Internal Split Faraday Shield for an Inductively Coupled Plasma Source
JP2013101929A (ja) 2011-11-07 2013-05-23 Fei Co 荷電粒子ビーム・システムの絞り
DE102012202519A1 (de) * 2012-02-17 2013-08-22 Carl Zeiss Microscopy Gmbh Verfahren und Vorrichtungen zur Präparation mikroskopischer Proben mit Hilfe von gepulstem Licht
US9895771B2 (en) 2012-02-28 2018-02-20 General Lasertronics Corporation Laser ablation for the environmentally beneficial removal of surface coatings
US9216475B2 (en) 2012-03-31 2015-12-22 Fei Company System for protecting light optical components during laser ablation
US9733164B2 (en) 2012-06-11 2017-08-15 Fei Company Lamella creation method and device using fixed-angle beam and rotating sample stage
US8759764B2 (en) 2012-06-29 2014-06-24 Fei Company On-axis detector for charged particle beam system
US8766213B2 (en) 2012-09-07 2014-07-01 Fei Company Automated method for coincident alignment of a laser beam and a charged particle beam
US9655223B2 (en) * 2012-09-14 2017-05-16 Oregon Physics, Llc RF system, magnetic filter, and high voltage isolation for an inductively coupled plasma ion source
US8884247B2 (en) 2012-09-25 2014-11-11 Fei Company System and method for ex situ analysis of a substrate
US9991090B2 (en) 2012-11-15 2018-06-05 Fei Company Dual laser beam system used with an electron microscope and FIB
EP2924710A1 (fr) * 2014-03-25 2015-09-30 Fei Company Imagerie d'un échantillon à l'aide de faisceaux multiples et un seul détecteur
US20160032281A1 (en) * 2014-07-31 2016-02-04 Fei Company Functionalized grids for locating and imaging biological specimens and methods of using the same
KR102257901B1 (ko) * 2014-09-19 2021-05-31 삼성전자주식회사 반도체 검사 장비 및 이를 이용한 반도체 소자의 검사 방법
JP6967340B2 (ja) * 2016-09-13 2021-11-17 株式会社日立ハイテクサイエンス 複合ビーム装置
JP2018152183A (ja) * 2017-03-10 2018-09-27 株式会社日立製作所 微細構造体の製造方法および製造装置
US10361064B1 (en) * 2018-02-28 2019-07-23 National Electrostatics Corp. Beam combiner
CN108511309A (zh) * 2018-05-28 2018-09-07 河南太粒科技有限公司 一种激光离子源装置
KR102374612B1 (ko) * 2019-08-22 2022-03-15 삼성디스플레이 주식회사 레이저 장치 및 레이저 가공 방법
JP7280983B2 (ja) * 2020-01-29 2023-05-24 株式会社日立ハイテク イオンミリング装置
KR20220162896A (ko) * 2021-06-01 2022-12-09 삼성디스플레이 주식회사 레이저 가공 장치 및 레이저 가공 방법

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JPH06318443A (ja) * 1994-03-31 1994-11-15 Hitachi Ltd イオンビーム装置
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JPH09257670A (ja) * 1996-03-19 1997-10-03 Hitachi Ltd 電子顕微鏡用試料作製装置

Also Published As

Publication number Publication date
WO2009089499A2 (fr) 2009-07-16
WO2009089499A4 (fr) 2009-12-03
US20110163068A1 (en) 2011-07-07

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