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WO2009075530A3 - Semi-conducteur et son procédé de fabrication - Google Patents

Semi-conducteur et son procédé de fabrication Download PDF

Info

Publication number
WO2009075530A3
WO2009075530A3 PCT/KR2008/007332 KR2008007332W WO2009075530A3 WO 2009075530 A3 WO2009075530 A3 WO 2009075530A3 KR 2008007332 W KR2008007332 W KR 2008007332W WO 2009075530 A3 WO2009075530 A3 WO 2009075530A3
Authority
WO
WIPO (PCT)
Prior art keywords
light
emitting device
cavity
reflection layer
mounting region
Prior art date
Application number
PCT/KR2008/007332
Other languages
English (en)
Other versions
WO2009075530A2 (fr
Inventor
Yeunho Bang
Junseung Baek
Wongil Choi
Myungyeol Lee
Original Assignee
Amoleds Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020080035172A external-priority patent/KR100974604B1/ko
Priority claimed from KR20080045589A external-priority patent/KR100996918B1/ko
Priority claimed from KR1020080046690A external-priority patent/KR100981079B1/ko
Priority claimed from KR1020080053144A external-priority patent/KR100979174B1/ko
Priority claimed from KR1020080056355A external-priority patent/KR20090130638A/ko
Priority claimed from KR1020080056863A external-priority patent/KR101027130B1/ko
Priority claimed from KR1020080064964A external-priority patent/KR100954453B1/ko
Priority claimed from KR1020080094456A external-priority patent/KR100996919B1/ko
Priority claimed from KR1020080112001A external-priority patent/KR100987152B1/ko
Application filed by Amoleds Co., Ltd. filed Critical Amoleds Co., Ltd.
Publication of WO2009075530A2 publication Critical patent/WO2009075530A2/fr
Publication of WO2009075530A3 publication Critical patent/WO2009075530A3/fr

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/16—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of types provided for in two or more different subclasses of H10B, H10D, H10F, H10H, H10K or H10N, e.g. forming hybrid circuits
    • H01L25/167—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of types provided for in two or more different subclasses of H10B, H10D, H10F, H10H, H10K or H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)

Abstract

Le boîtier de semi-conducteur selon la présente invention inclut : un substrat doté d'une cavité dans laquelle une région de montage de dispositif électroluminescent est formée ; un dispositif électroluminescent monté dans la région de montage de dispositif électroluminescent ; et une couche de réflexion blanche qui est formée dans la cavité et recouvre une surface inférieure et une paroi latérale intérieure de la cavité autour du dispositif électroluminescent. La couche de réflexion inclut TiO2 et/ou ZnO et/ou du lithopone et/ou ZnS et/ou BaS04 et/ou SiO2 et/ou PTFE (polytétrafluoroéthylène), les principaux matériaux étant ajoutés à hauteur de 5 à 60 % en poids.
PCT/KR2008/007332 2007-12-13 2008-12-11 Semi-conducteur et son procédé de fabrication WO2009075530A2 (fr)

Applications Claiming Priority (24)

Application Number Priority Date Filing Date Title
KR10-2007-0129775 2007-12-13
KR20070129775 2007-12-13
KR20080031620 2008-04-04
KR10-2008-0031620 2008-04-04
KR10-2008-0035172 2008-04-16
KR1020080035172A KR100974604B1 (ko) 2007-12-13 2008-04-16 전자부품 패키지 및 그의 제조방법
KR20080045589A KR100996918B1 (ko) 2008-05-16 2008-05-16 전자부품 패키지
KR10-2008-0045589 2008-05-16
KR1020080046690A KR100981079B1 (ko) 2008-05-20 2008-05-20 정전기 방지 기능을 갖춘 엘이디 패키지용 기판 및 이를이용한 엘이디 패키지
KR10-2008-0046690 2008-05-20
KR1020080053144A KR100979174B1 (ko) 2008-06-05 2008-06-05 멀티칩 패키지 및 그의 제조방법
KR10-2008-0053144 2008-06-05
KR10-2008-0056355 2008-06-16
KR1020080056355A KR20090130638A (ko) 2008-06-16 2008-06-16 엘이디 패키지의 제조방법
KR1020080056863A KR101027130B1 (ko) 2008-06-17 2008-06-17 엘이디 패키지
KR10-2008-0056863 2008-06-17
KR1020080064964A KR100954453B1 (ko) 2008-07-04 2008-07-04 엘이디 패키지
KR10-2008-0064964 2008-07-04
KR10-2008-0065988 2008-07-08
KR20080065988 2008-07-08
KR1020080094456A KR100996919B1 (ko) 2008-07-08 2008-09-26 반도체 패키지
KR10-2008-0094456 2008-09-26
KR10-2008-0112001 2008-11-12
KR1020080112001A KR100987152B1 (ko) 2008-11-12 2008-11-12 반도체 패키지

Publications (2)

Publication Number Publication Date
WO2009075530A2 WO2009075530A2 (fr) 2009-06-18
WO2009075530A3 true WO2009075530A3 (fr) 2009-09-17

Family

ID=40755988

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2008/007332 WO2009075530A2 (fr) 2007-12-13 2008-12-11 Semi-conducteur et son procédé de fabrication

Country Status (1)

Country Link
WO (1) WO2009075530A2 (fr)

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US20110254030A1 (en) * 2010-04-15 2011-10-20 Perkinelmer Elcos Gmbh Liquid reflector
DE102010029368A1 (de) * 2010-05-27 2011-12-01 Osram Opto Semiconductors Gmbh Elektronische Anordnung und Verfahren zum Herstellen einer elektronischen Anordnung
DE102010021791A1 (de) 2010-05-27 2011-12-01 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements und eines Verbunds
DE102010023955A1 (de) 2010-06-16 2011-12-22 Osram Opto Semiconductors Gmbh Optoelektronisches Bauteil
DE102010026344A1 (de) 2010-07-07 2012-01-12 Osram Opto Semiconductors Gmbh Leuchtdiode
DE102010038396B4 (de) 2010-07-26 2021-08-05 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Bauelement und Leuchtvorrichung damit
DE102010047303A1 (de) * 2010-10-01 2012-04-05 Osram Opto Semiconductors Gmbh Reflektorelement, optoelektronisches Bauelement und Verfahren zur Herstellung eines Reflektorelements und eines optoelektronischen Bauelements
JP5582048B2 (ja) * 2011-01-28 2014-09-03 日亜化学工業株式会社 発光装置
EP2500623A1 (fr) * 2011-03-18 2012-09-19 Koninklijke Philips Electronics N.V. Procédé de fourniture d'un revêtement réfléchissant à un substrat pour un dispositif électroluminescent
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WO2013112435A1 (fr) * 2012-01-24 2013-08-01 Cooledge Lighting Inc. Dispositifs électroluminescents présentant des puces distinctes à luminophore et procédés de fabrication associés
WO2013121787A1 (fr) * 2012-02-15 2013-08-22 パナソニック株式会社 Appareil électroluminescent et son procédé de fabrication
KR101483259B1 (ko) 2012-08-28 2015-01-14 주식회사 아모센스 무수축 바리스타 기판 및 그 제조 방법
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JP6056336B2 (ja) * 2012-09-28 2017-01-11 日亜化学工業株式会社 発光装置
DE102013100711B4 (de) * 2013-01-24 2021-07-01 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung einer Vielzahl optoelektronischer Bauelemente
CN103175012B (zh) * 2013-04-02 2015-11-25 四川新力光源股份有限公司 发光二极管照明装置和提高发光二极管照明装置的显色性的方法
CN105378949B (zh) * 2013-05-20 2019-01-18 亮锐控股有限公司 具有圆顶的芯片级发光器件封装
JP2015032740A (ja) * 2013-08-05 2015-02-16 豊田合成株式会社 発光装置
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DE102014100469A1 (de) * 2013-11-29 2015-06-03 Epcos Ag Elektronisches Bauelement und Verwendung desselben
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JP6341261B2 (ja) * 2015-12-26 2018-06-13 日亜化学工業株式会社 発光装置ならびに発光装置の製造方法
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DE102016107497B4 (de) 2016-03-24 2020-01-30 Tdk Electronics Ag Multi-LED System und Verfahren zu seiner Herstellung
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JP6913445B2 (ja) * 2016-07-28 2021-08-04 シーシーエス株式会社 Ｌｅｄ発光装置及びその製造方法
JP6562027B2 (ja) * 2017-02-03 2019-08-21 日亜化学工業株式会社 発光装置
JP6760324B2 (ja) * 2018-03-27 2020-09-23 日亜化学工業株式会社 発光装置
JP6669208B2 (ja) * 2018-08-02 2020-03-18 日亜化学工業株式会社 発光装置
JP7181459B2 (ja) * 2018-11-22 2022-12-01 日亜化学工業株式会社 発光装置
JP7208490B2 (ja) * 2018-12-26 2023-01-19 日亜化学工業株式会社 樹脂パッケージ及び発光装置
JP2019087763A (ja) * 2019-03-01 2019-06-06 パイオニア株式会社 光半導体デバイスおよび光半導体デバイスの製造方法
CN109994459B (zh) * 2019-04-08 2023-12-29 东莞市铱源光电科技有限公司 一种高集成度led芯片模组全色配光的方法和结构
DE102019123886A1 (de) 2019-09-05 2021-03-11 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches bauelement und verfahren zur herstellung eines optoelektronischen bauelements
DE102020111728B4 (de) * 2020-04-29 2022-06-23 Schott Ag Elektro-optisches Wandlerbauteil mit einem Abstandhalter, sowie Abstandhalter-Wafer zur Herstellung eines elektro-optischen Wandlerbauteils
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