WO2009068690A1 - Capteur de pression contenant du siliciure de molybdène pour le blindage - Google Patents
Capteur de pression contenant du siliciure de molybdène pour le blindage Download PDFInfo
- Publication number
- WO2009068690A1 WO2009068690A1 PCT/EP2008/066557 EP2008066557W WO2009068690A1 WO 2009068690 A1 WO2009068690 A1 WO 2009068690A1 EP 2008066557 W EP2008066557 W EP 2008066557W WO 2009068690 A1 WO2009068690 A1 WO 2009068690A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- pressure
- pressure sensor
- sensor chip
- passivation layer
- layer
- Prior art date
Links
- YXTPWUNVHCYOSP-UHFFFAOYSA-N bis($l^{2}-silanylidene)molybdenum Chemical compound [Si]=[Mo]=[Si] YXTPWUNVHCYOSP-UHFFFAOYSA-N 0.000 title abstract description 16
- 229910021344 molybdenum silicide Inorganic materials 0.000 title abstract description 16
- 239000012528 membrane Substances 0.000 claims abstract description 24
- 238000002161 passivation Methods 0.000 claims abstract description 24
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 13
- 239000010703 silicon Substances 0.000 claims abstract description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 8
- 239000004020 conductor Substances 0.000 claims description 6
- 239000000126 substance Substances 0.000 claims description 6
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 5
- 238000004544 sputter deposition Methods 0.000 claims description 5
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 4
- 238000003486 chemical etching Methods 0.000 claims description 3
- 230000001419 dependent effect Effects 0.000 abstract description 8
- 238000005259 measurement Methods 0.000 abstract description 6
- 230000007774 longterm Effects 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 38
- 229910052782 aluminium Inorganic materials 0.000 description 15
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 15
- 239000000463 material Substances 0.000 description 13
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 10
- 229920005591 polysilicon Polymers 0.000 description 10
- 238000000151 deposition Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 108010053481 Antifreeze Proteins Proteins 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 238000002513 implantation Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 230000006978 adaptation Effects 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000008646 thermal stress Effects 0.000 description 2
- 229910016006 MoSi Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 238000009530 blood pressure measurement Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 150000002751 molybdenum Chemical class 0.000 description 1
- KVMWOOXRTBUMIS-UHFFFAOYSA-N molybdenum zirconium Chemical compound [Zr].[Mo].[Mo] KVMWOOXRTBUMIS-UHFFFAOYSA-N 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0051—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance
- G01L9/0052—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements
- G01L9/0054—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements integral with a semiconducting diaphragm
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
Definitions
- the invention relates to a Halbieiter pressure sensor chip with an electrical shield.
- Pressure sensors are used to detect pressures and are used in pressure gauges, e.g. used in industrial metrology, used for the measurement of absolute pressures, relative pressures and differential pressures.
- semiconductor sensors are often used as pressure sensors.
- Semiconductor sensors are now regularly silicon-based, e.g. Produced using Silicon-on-Insulator (SOI) technology. They are regularly formed as a pressure sensor chip, which typically has a carrier and a measuring membrane arranged on a carrier. The measuring diaphragm is exposed to the pressure to be measured during measuring operation.
- SOI Silicon-on-Insulator
- Pressure sensor chips are usually very sensitive and are therefore not usually exposed directly to a medium whose pressure is to be measured. Instead, liquid seals filled with liquid are placed in front of them, which transmit the pressure to be measured to the measuring membrane.
- a pressure acting on the measuring membrane causes a pressure-dependent deflection of the measuring membrane, which is detected by arranged on the measuring membrane sensor elements and converted into an electrical output signal that is then available for further processing and / or evaluation.
- piezoresistive resistors are, for example, by suitable doping methods, such as eg diffusion or implantation.
- the piezoresistive resistors are formed, for example, by regions on the measuring membrane which have a positive doping. These regions are, for example, applied to a silicon layer having a negative doping.
- at least four resistors are used, which are for example distributed on the measuring diaphragm in such a way that their resistance values increase or decrease in pairs as a function of a deflection of the measuring diaphragm caused by the acting pressure.
- the resistors are typically connected together to form a bridge circuit, eg, a Wheatstone bridge, and an output signal dependent on the applied pressure is taken from the bridge circuit.
- Output signal is essentially caused by an acting field at higher temperatures drift movement of ions on the chip. It is further stated there that a shield in the form of a metallically conductive covering layer on the chip surface can prevent these ions from drift if the covering layer is at the same potential as the substrate.
- Aluminum layer used. Aluminum has the advantage that one can produce the aluminum screen together with aluminum tracks and aluminum contact pads in a sputtering process.
- needle-shaped Auskristailmaschineen of AISi - so-called "spikes” can form, which penetrate the chip surface.When these Auskristalüstechniken reach the sensor elements creates a short circuit.
- doped polysilicon Another material commonly used for electrical shielding is doped polysilicon. Many material properties of polysilicon are very similar to those of single-crystal silicon. Here are mainly the thermal expansion coefficient, the hardness, as well as the elasticity and shear modules to call. As dopants, for example, boron or phosphorus are used in the production of polysilicon. However, the dopants reduce the resistivity of the material and affect the intrinsic stress in the thin film.
- the doping takes place for example by diffusion, by implantation or by the addition of a dopant gas during the deposition of serving as a shielding layer, depending on the temperature prevailing during the manufacturing process and the pressure prevailing during the manufacturing process amorphous or polycrystalline material.
- the grain size of the polycrystalline material is also strongly dependent on the production conditions. Due to the strong dependence of the material properties on the production conditions, a large scattering of the material properties occurs in doped polysilicon. This has a negative effect on the reproducibility of the production of doped polysilicon layers.
- the invention consists in a pressure sensor chip for measuring a pressure, with
- a measuring membrane made of silicon to which a pressure to be measured acts during measurement operation
- a passivation layer arranged on the upper side of the measuring diaphragm and covering the sensor elements
- the sensor elements are piezoresistive resistors.
- the passivation layer comprises a silicon oxide layer.
- the passivation layer comprises a further layer applied to the silicon oxide layer, in particular a silicon nitride layer.
- a contact pad is arranged on the upper side of the measuring diaphragm, which is connected via a conductor track to the electrical shield, and via which an electrical connection of the shield takes place.
- the contact pad and the conductor track are applied to the passivation layer.
- the shield of MoJybdänsiiizid a layer thickness in the order of 100 nm.
- the invention further includes a method for producing a pressure sensor chip according to the invention, in which the electrical shielding made of molybdenum silicide is applied to the passivation layer by sputtering, and is structured by means of a wet-chemical or a dry-chemical etching method.
- Moiybdänsiiicide has the advantage of having excellent thermal, chemical and mechanical properties for this application.
- MoiybdänsiÜzid has a resistivity of 4.5 10 '5 ⁇ cm and thus ensures a reliable shielding. As a result, an ion drift on the chip surface is reliably prevented and the pressure sensor is protected from externally applied electric fields.
- Molybdenum silicide has a coefficient of thermal expansion much more similar to that of silicon than the thermal expansion coefficient of aluminum. This results in a very favorable material adaptation and thermal stresses, which could affect the stability of the output signal are largely avoided. In addition, molybdenum silicide has a very high mechanical stability, which is in particular significantly higher than that of polysilicon and aluminum, so that the risk of mechanical hysteresis is also largely eliminated.
- Another advantage! consists in that the shield of molybdenum silicide can be applied in a simple and very economical manner by Suttertern and the applied layer by ageschemisches or trochenchemisches etching icht structure.
- Fig. 1 shows a section through a pressure sensor chip according to the invention
- Fig. 2 shows a view of an upper side of the pressure sensor chip according to the invention.
- the pressure sensor chip comprises a membrane carrier 1 and a measuring membrane 3.
- the membrane carrier 1 carries the measuring membrane 3.
- Membrane carrier 1 and measuring membrane 3 are made of silicon and are preferably made of a single Subrat made on the underside of a here circular disc-shaped measuring membrane 3 exposing recess 5 is provided. Particularly suitable for this purpose is monocrystalline Silicon with negative doping, Alternatively, however, a monocrystalline substrate without doping or with positive doping can be used.
- a pressure to be measured p which is fed to the measuring diaphragm 3 directly or via an upstream diaphragm seal. This is shown in Fig. 1 by an arrow p.
- the acting pressure p causes a pressure-dependent deflection of the measuring diaphragm 1. In the illustrated embodiment, the pressure p acts on an upper side of the measuring diaphragm 1.
- Fig. 2 shows a view of the top of the pressure sensor chip.
- the connection lines 9 lead from the sensor elements 7 to contact pads 11 arranged in the corners of the illustrated pressure sensor chip.
- the sensor elements 7 are preferably piezoresistive resistors. These are obtained, for example, by suitable doping methods, e.g. Diffusion or implantation. If the substrate mentioned above is used with negative doping, then the resistors can be produced, for example, by implanting boron in the uppermost layer of the substrate and then structuring the uppermost layer such that only the areas of the uppermost layer serving as sensor elements 7 on the Membrane surface remain. Usually, at least four resistors are used, e.g. are distributed on the measuring diaphragm such that their resistance values increase or decrease in pairs as a function of a deflection of the measuring diaphragm caused by the applied pressure. The resistors are typically one
- Bridge circuit such as a Wheatstone bridge, connected together, and there is a dependent of the applied pressure p output at the Bridge circuit removed.
- the arrangement of the sensor elements 7 and the connected connecting lines 9 are shown in FIG. 2.
- the pressure sensor chip has a passivation layer 13 arranged on the upper side of the measuring diaphragm 3, which covers at least the sensor elements 7.
- the passivation layer 13 is made of an insulating material, such as. As silicon dioxide (SiO 2 ) or silicon nitride (SIaN 4 ). In principle, a single layer, eg of silicon dioxide, is sufficient. Silicon dioxide (SiO 2 ) has the advantage that it forms a very good mechanical bond with the chip.
- the passivation layer 13 preferably comprises a further layer applied to the silicon oxide layer, in particular a silicon nitride layer. Silicon nitride (Si 3 N 4 ) offers the advantage of a very good shielding.
- the deposition of the material or the material layers is preferably carried out by chemical vapor deposition under vacuum (low pressure chemical vapor deposition (LPCVD)) or plasma-enhanced chemical vapor deposition (PECVD).
- LPCVD low pressure chemical vapor deposition
- PECVD plasma-enhanced chemical vapor deposition
- classical photolithographic methods can be used for this purpose in order to limit the deposition to individual areas of the chip surface. In this case, preferably a small area is recessed in the immediate vicinity of each sensor element 7, in which subsequently an electrical contacting of the sensor element 7 can take place.
- the areas may e.g. by appropriate photolithographic processes by means of appropriately shaped masks during the
- the large-area deposition of the passivation layer 13 on the chip surface shown here has the advantage that it effects a primary passivation of the chip surface and, in particular, of the sensor elements 7.
- Passivation layer 13 forms a protection of the sensor elements 7 Moisture while preventing charge transport on the surface of the pressure sensor chip.
- the pressure sensor chip has an electrical shield 15 made of molybdenum salt (MoSi 2 ) applied to the passivation layer 13 on the upper side of the measuring diaphragm 3.
- Fig. 2 shows a view of the chip top, showing the arrangement of the shield 15.
- the shield 15 is circular disk-shaped in the illustrated embodiment. It covers the sensor elements 7 located underneath.
- the sensor elements 7 located underneath, as well as the sections 17 of the connection lines 9 connected thereto, which run under the passivation layer 13, are shown in dashed lines in FIG.
- the electrical shielding 15 of molybdenum silicide is preferably applied to the top of the measuring membrane 3 by sputtering, and patterned by means of a wet-chemical or a dry-chemical etching process.
- the passivation layer 13 located between the shield 15 and the sensor elements 7 causes electrical isolation of the sensor elements 7 with respect to the shield 15.
- Molybdenum silicide has the advantage of having excellent thermal, chemical and mechanical properties for this application.
- Molybdenum silicide has a resistivity of 4.5 10 "5 ⁇ cm and thus ensures reliable shielding, resulting in ion drift on the surface
- Molybdenum silicide has a coefficient of thermal expansion much more similar to that of silicon than the thermal expansion coefficient of aluminum. This results in a very favorable material adaptation and thermal stresses, which could affect the stability of the output signal are largely avoided.
- molybdenum silicide has a very high mechanical stability, which in particular is higher than that of polysilicon and aluminum, so that the risk of mechanical hysteresis is also largely eliminated.
- the elastic modulus of molybdenum silicide is between 242 GPa and 377 GPa.
- polysilicon only has a modulus of elasticity of 120 GPa to 180 GPa.
- the modulus of elasticity of aluminum is as low as 70 GPa.
- the modulus of molybdenum silicide is 180 GPa, that of polysilicon is only 69 GPa and the aluminum is only 25 GPa. Molybdenum silicide is therefore more stable, harder and more elastic than polysilicon or aluminum.
- a further advantage is that the molybdenum zirconium screen 15 can be applied by sputtering in a simple and very economical manner, and the applied layer can easily be structured by wet-chemical or trochlear etching.
- the shield 15 made of molybdenum silicide has a layer thickness of the order of 100 nm, in comparison with the use of Polysiiizium due to the polycrystalline structure of this material layer thicknesses of the order of a few hundred nm required to a comparable quality of Shielding to achieve.
- a small layer thickness offers the advantage of less reaction to the measuring properties of the pressure sensor.
- the electrical connection of the electrical shield 15 takes place via a contact pad 19 which is arranged on the upper side of the measuring diaphragm 3 and which is connected to the electrical shield 15 via a conductor track 21.
- a contact pad 19 which is arranged on the upper side of the measuring diaphragm 3 and which is connected to the electrical shield 15 via a conductor track 21.
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Pressure Sensors (AREA)
- Measuring Fluid Pressure (AREA)
Abstract
L'invention concerne une puce de capteur de pression destinée à mesurer une pression, permettant de produire un signal de sortie dépendant de la pression, présentant une grande stabilité à long terme. La puce de capteur comporte un support de membrane (1) en silicium, une membrane de mesure (3) en silicium sur laquelle une pression à mesurer (p) est appliquée lors du fonctionnement de mesure, des éléments de capteur (7) disposés sur un côté supérieur de la membrane de mesure (3), servant à convertir une déviation de la membrane de mesure (3), dépendant de la pression appliquée (p), en un signal de sortie électrique, une couche de passivation (13) disposée sur le côté supérieur de la membrane de mesure (3), recouvrant les éléments de capteur (7), et un blindage électrique (15) en siliciure de molybdène disposé sur la couche de passivation (13), recouvrant les éléments de capteur (7).
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102007057877A DE102007057877A1 (de) | 2007-11-29 | 2007-11-29 | Drucksensor |
| DE102007057877.8 | 2007-11-29 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2009068690A1 true WO2009068690A1 (fr) | 2009-06-04 |
Family
ID=40512154
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/EP2008/066557 WO2009068690A1 (fr) | 2007-11-29 | 2008-12-01 | Capteur de pression contenant du siliciure de molybdène pour le blindage |
Country Status (2)
| Country | Link |
|---|---|
| DE (1) | DE102007057877A1 (fr) |
| WO (1) | WO2009068690A1 (fr) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11573143B2 (en) | 2021-04-21 | 2023-02-07 | Vitesco Technologies USA, LLC | Mems pressure sensing element with stress adjustors to minimize thermal hysteresis induced by electrical field |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102005049792A1 (de) * | 2005-05-30 | 2006-12-07 | Mitsubishi Denki K.K. | Halbleiterdrucksensor |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| AU503379B1 (en) | 1978-08-28 | 1979-08-30 | Babcock & Wilcox Co., The | Pressure transducer |
-
2007
- 2007-11-29 DE DE102007057877A patent/DE102007057877A1/de not_active Ceased
-
2008
- 2008-12-01 WO PCT/EP2008/066557 patent/WO2009068690A1/fr active Application Filing
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102005049792A1 (de) * | 2005-05-30 | 2006-12-07 | Mitsubishi Denki K.K. | Halbleiterdrucksensor |
Non-Patent Citations (1)
| Title |
|---|
| T. MOCHIZUKI, K SHIBATA, T. INOUE, K. OHUCHI: "A New MOS Process Using MoSi2 as a Gate Material", JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 17, no. Suppl.17-1, 1978, pages 37 - 42, XP002523020 * |
Also Published As
| Publication number | Publication date |
|---|---|
| DE102007057877A1 (de) | 2009-06-04 |
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