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WO2009060585A1 - 露光装置及び露光方法、並びにデバイス製造方法 - Google Patents

露光装置及び露光方法、並びにデバイス製造方法 Download PDF

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Publication number
WO2009060585A1
WO2009060585A1 PCT/JP2008/003160 JP2008003160W WO2009060585A1 WO 2009060585 A1 WO2009060585 A1 WO 2009060585A1 JP 2008003160 W JP2008003160 W JP 2008003160W WO 2009060585 A1 WO2009060585 A1 WO 2009060585A1
Authority
WO
WIPO (PCT)
Prior art keywords
state
region
exposure
axis direction
wafer stages
Prior art date
Application number
PCT/JP2008/003160
Other languages
English (en)
French (fr)
Inventor
Yuichi Shibazaki
Original Assignee
Nikon Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corporation filed Critical Nikon Corporation
Priority to JP2009539947A priority Critical patent/JP4986185B2/ja
Priority to CN200880011784.0A priority patent/CN101675500B/zh
Publication of WO2009060585A1 publication Critical patent/WO2009060585A1/ja
Priority to HK10104656.5A priority patent/HK1137077A1/xx

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70716—Stages
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70733—Handling masks and workpieces, e.g. exchange of workpiece or mask, transport of workpiece or mask
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

　液浸領域（１４）が形成される投影光学系（ＰＬ）の下方の領域に、一方のウエハステージ（ＷＳＴ１）が位置する状態から他方のウエハステージ（ＷＳＴ２）が位置する状態に移行させる際に、両ウエハステージ（ＷＳＴ２，ＷＳＴ１）を、それぞれに設けられた庇部（２３ａ’）と段部（２３ｂ）とを係合させて、Ｘ軸方向に関してずれた状態で、Ｙ軸方向に近接又は接触させ、その状態を維持してＹ軸方向に同時に駆動する。これにより、液浸領域が、庇部を介して２つのウエハステージ間で受け渡し、液浸領域を形成する液体の漏れを抑制する。
PCT/JP2008/003160 2007-11-07 2008-11-04 露光装置及び露光方法、並びにデバイス製造方法 WO2009060585A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2009539947A JP4986185B2 (ja) 2007-11-07 2008-11-04 露光装置及び露光方法、並びにデバイス製造方法
CN200880011784.0A CN101675500B (zh) 2007-11-07 2008-11-04 曝光装置、曝光方法以及元件制造方法
HK10104656.5A HK1137077A1 (en) 2007-11-07 2010-05-13 Exposure apparatus, exposure method and device manufacturing method

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007289203 2007-11-07
JP2007-289203 2007-11-07

Publications (1)

Publication Number Publication Date
WO2009060585A1 true WO2009060585A1 (ja) 2009-05-14

Family

ID=40625493

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/003160 WO2009060585A1 (ja) 2007-11-07 2008-11-04 露光装置及び露光方法、並びにデバイス製造方法

Country Status (7)

Country Link
US (1) US8797508B2 (ja)
JP (1) JP4986185B2 (ja)
KR (1) KR101470671B1 (ja)
CN (1) CN101675500B (ja)
HK (1) HK1137077A1 (ja)
TW (1) TWI435183B (ja)
WO (1) WO2009060585A1 (ja)

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US8902402B2 (en) 2008-12-19 2014-12-02 Nikon Corporation Movable body apparatus, exposure apparatus, exposure method, and device manufacturing method
US8773635B2 (en) * 2008-12-19 2014-07-08 Nikon Corporation Exposure apparatus, exposure method, and device manufacturing method
US8599359B2 (en) 2008-12-19 2013-12-03 Nikon Corporation Exposure apparatus, exposure method, device manufacturing method, and carrier method
US8488109B2 (en) 2009-08-25 2013-07-16 Nikon Corporation Exposure method, exposure apparatus, and device manufacturing method
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US9207549B2 (en) 2011-12-29 2015-12-08 Nikon Corporation Exposure apparatus and exposure method, and device manufacturing method with encoder of higher reliability for position measurement
US8779635B2 (en) * 2012-04-10 2014-07-15 Kla-Tencor Corporation Arrangement of reticle positioning device for actinic inspection of EUV reticles
JP6362312B2 (ja) * 2013-09-09 2018-07-25 キヤノン株式会社 露光装置、それを用いたデバイスの製造方法
CN111290221B (zh) 2015-02-23 2023-07-28 株式会社尼康 测量装置、光刻系统、曝光装置、测量方法、曝光方法以及元件制造方法
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CN111948912A (zh) 2015-02-23 2020-11-17 株式会社尼康 基板处理系统及基板处理方法、以及组件制造方法
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US8599356B2 (en) 2009-09-11 2013-12-03 Asml Netherlands B.V. Shutter member, a lithographic apparatus and device manufacturing method

Also Published As

Publication number Publication date
KR101470671B1 (ko) 2014-12-08
TW200935184A (en) 2009-08-16
CN101675500B (zh) 2011-05-18
JP4986185B2 (ja) 2012-07-25
HK1137077A1 (en) 2010-07-16
US8797508B2 (en) 2014-08-05
KR20100085833A (ko) 2010-07-29
US20090225288A1 (en) 2009-09-10
CN101675500A (zh) 2010-03-17
JPWO2009060585A1 (ja) 2011-03-17
TWI435183B (zh) 2014-04-21

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