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WO2009050861A1 - Elément de mémoire non volatile et son procédé de fabrication et dispositif semi-conducteur non volatile utilisant un élément de mémoire non volatile - Google Patents

Elément de mémoire non volatile et son procédé de fabrication et dispositif semi-conducteur non volatile utilisant un élément de mémoire non volatile Download PDF

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Publication number
WO2009050861A1
WO2009050861A1 PCT/JP2008/002838 JP2008002838W WO2009050861A1 WO 2009050861 A1 WO2009050861 A1 WO 2009050861A1 JP 2008002838 W JP2008002838 W JP 2008002838W WO 2009050861 A1 WO2009050861 A1 WO 2009050861A1
Authority
WO
WIPO (PCT)
Prior art keywords
electrode
memory element
nonvolatile memory
voltage pulse
nonvolatile
Prior art date
Application number
PCT/JP2008/002838
Other languages
English (en)
Japanese (ja)
Inventor
Satoru Mitani
Satoru Fujii
Takeshi Takagi
Original Assignee
Panasonic Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Corporation filed Critical Panasonic Corporation
Publication of WO2009050861A1 publication Critical patent/WO2009050861A1/fr

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
    • H10B63/22—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes of the metal-insulator-metal type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/30—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • H10B63/84—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays arranged in a direction perpendicular to the substrate, e.g. 3D cell arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/021—Formation of switching materials, e.g. deposition of layers
    • H10N70/026—Formation of switching materials, e.g. deposition of layers by physical vapor deposition, e.g. sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/24—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/883—Oxides or nitrides
    • H10N70/8833—Binary metal oxides, e.g. TaOx

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)

Abstract

La présente invention concerne un élément de mémoire non volatile comprenant une première électrode (103), une seconde électrode (105) et une couche de modification de résistance (104) qui est située entre la première électrode (103) et la seconde électrode (105) et modifie de façon réversible sa valeur de résistance en fonction d'un signal électrique appliqué entre les deux électrodes (103) et (105). La couche de modification de résistance (104) comprend de l'oxyde de hafnium à faible teneur en oxygène. La valeur de résistance entre la première électrode (103) et la seconde électrode (105) est augmentée par l'application, en tant que signal électrique, d'une première impulsion de tension de polarité entre la première électrode (103) et la seconde électrode (105) et est réduite par l'application, en tant que signal électrique, d'une seconde impulsion de tension de polarité entre la première électrode (103) et la seconde électrode (105). Les première et seconde polarités ont des polarités mutuellement opposées et la valeur de tension absolue de la première impulsion de tension de polarité est supérieure à celle de la seconde impulsion de tension de polarité.
PCT/JP2008/002838 2007-10-15 2008-10-08 Elément de mémoire non volatile et son procédé de fabrication et dispositif semi-conducteur non volatile utilisant un élément de mémoire non volatile WO2009050861A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-267584 2007-10-15
JP2007267584A JP2010287582A (ja) 2007-10-15 2007-10-15 不揮発性記憶素子およびその製造方法、並びにその不揮発性記憶素子を用いた不揮発性半導体装置

Publications (1)

Publication Number Publication Date
WO2009050861A1 true WO2009050861A1 (fr) 2009-04-23

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/002838 WO2009050861A1 (fr) 2007-10-15 2008-10-08 Elément de mémoire non volatile et son procédé de fabrication et dispositif semi-conducteur non volatile utilisant un élément de mémoire non volatile

Country Status (2)

Country Link
JP (1) JP2010287582A (fr)
WO (1) WO2009050861A1 (fr)

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009136467A1 (fr) * 2008-05-08 2009-11-12 パナソニック株式会社 Élément de mémoire non volatile, mémoire non volatile et procédé d'écriture de données dans un élément de mémoire non volatile
WO2010021134A1 (fr) * 2008-08-20 2010-02-25 パナソニック株式会社 Dispositif de mémoire non volatile de type résistance variable et procédé de formation de cellule mémoire
JP2011040579A (ja) * 2009-08-11 2011-02-24 Toshiba Corp 抵抗変化メモリ
WO2011052239A1 (fr) * 2009-11-02 2011-05-05 パナソニック株式会社 Dispositif de mémoire non volatile à résistance variable et procédé de formation d'une cellule de mémoire
WO2011089682A1 (fr) * 2010-01-25 2011-07-28 パナソニック株式会社 Procédé de fabrication d'un élément de mémorisation semi-conducteur non volatile et procédé de fabrication d'un dispositif de mémorisation semi-conducteur non volatile
JP2011160370A (ja) * 2010-02-04 2011-08-18 Rohm Co Ltd プログラマブルロジックデバイスおよびそれを用いた電子機器
US8227788B2 (en) 2008-11-19 2012-07-24 Panasonic Corporation Nonvolatile memory element, and nonvolatile memory device
US8354660B2 (en) 2010-03-16 2013-01-15 Sandisk 3D Llc Bottom electrodes for use with metal oxide resistivity switching layers
US8389971B2 (en) 2010-10-14 2013-03-05 Sandisk 3D Llc Memory cells having storage elements that share material layers with steering elements and methods of forming the same
US8592798B2 (en) 2010-04-21 2013-11-26 Panasonic Corporation Non-volatile storage device and method for manufacturing the same
US8785238B2 (en) 2010-07-01 2014-07-22 Panasonic Corporation Nonvolatile memory element and method for manufacturing same
US8841648B2 (en) 2010-10-14 2014-09-23 Sandisk 3D Llc Multi-level memory arrays with memory cells that employ bipolar storage elements and methods of forming the same
US9105332B2 (en) 2012-03-15 2015-08-11 Panasonic Intellectual Property Management Co., Ltd. Variable resistance nonvolatile memory device

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8129704B2 (en) * 2008-05-01 2012-03-06 Intermolecular, Inc. Non-volatile resistive-switching memories
TWI476973B (zh) * 2014-03-25 2015-03-11 Winbond Electronics Corp 記憶體元件及形成方法
WO2021085475A1 (fr) * 2019-11-01 2021-05-06 国立研究開発法人科学技術振興機構 Capteur de courant et circuit de conversion de puissance électrique

Citations (7)

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JP2006173267A (ja) * 2004-12-14 2006-06-29 Sony Corp 記憶素子及び記憶装置
JP2006279042A (ja) * 2005-03-28 2006-10-12 Samsung Electronics Co Ltd 抵抗メモリセル、その形成方法及びこれを利用した抵抗メモリ配列
JP2007088349A (ja) * 2005-09-26 2007-04-05 Fujitsu Ltd 不揮発性半導体記憶装置及びその書き込み方法
JP2007109875A (ja) * 2005-10-13 2007-04-26 Matsushita Electric Ind Co Ltd 記憶素子，メモリ装置，半導体集積回路
JP2007184419A (ja) * 2006-01-06 2007-07-19 Sharp Corp 不揮発性メモリ装置
JP2007220768A (ja) * 2006-02-15 2007-08-30 Matsushita Electric Ind Co Ltd 不揮発性記憶素子およびその製造方法
JP2008205191A (ja) * 2007-02-20 2008-09-04 Toshiba Corp 不揮発性半導体メモリ素子および不揮発性半導体メモリ装置

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006173267A (ja) * 2004-12-14 2006-06-29 Sony Corp 記憶素子及び記憶装置
JP2006279042A (ja) * 2005-03-28 2006-10-12 Samsung Electronics Co Ltd 抵抗メモリセル、その形成方法及びこれを利用した抵抗メモリ配列
JP2007088349A (ja) * 2005-09-26 2007-04-05 Fujitsu Ltd 不揮発性半導体記憶装置及びその書き込み方法
JP2007109875A (ja) * 2005-10-13 2007-04-26 Matsushita Electric Ind Co Ltd 記憶素子，メモリ装置，半導体集積回路
JP2007184419A (ja) * 2006-01-06 2007-07-19 Sharp Corp 不揮発性メモリ装置
JP2007220768A (ja) * 2006-02-15 2007-08-30 Matsushita Electric Ind Co Ltd 不揮発性記憶素子およびその製造方法
JP2008205191A (ja) * 2007-02-20 2008-09-04 Toshiba Corp 不揮発性半導体メモリ素子および不揮発性半導体メモリ装置

Cited By (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009136467A1 (fr) * 2008-05-08 2009-11-12 パナソニック株式会社 Élément de mémoire non volatile, mémoire non volatile et procédé d'écriture de données dans un élément de mémoire non volatile
JPWO2009136467A1 (ja) * 2008-05-08 2011-09-01 パナソニック株式会社 不揮発性記憶素子、不揮発性記憶装置、および不揮発性記憶素子へのデータ書込方法
JP4469022B2 (ja) * 2008-05-08 2010-05-26 パナソニック株式会社 不揮発性記憶素子、不揮発性記憶装置、および不揮発性記憶素子へのデータ書込方法
US8830730B2 (en) 2008-08-20 2014-09-09 Panasonic Corporation Variable resistance nonvolatile storage device and method of forming memory cell
JP4555397B2 (ja) * 2008-08-20 2010-09-29 パナソニック株式会社 抵抗変化型不揮発性記憶装置
WO2010021134A1 (fr) * 2008-08-20 2010-02-25 パナソニック株式会社 Dispositif de mémoire non volatile de type résistance variable et procédé de formation de cellule mémoire
JPWO2010021134A1 (ja) * 2008-08-20 2012-01-26 パナソニック株式会社 抵抗変化型不揮発性記憶装置
US8553444B2 (en) 2008-08-20 2013-10-08 Panasonic Corporation Variable resistance nonvolatile storage device and method of forming memory cell
US8399875B1 (en) 2008-11-19 2013-03-19 Panasonic Corporation Nonvolatile memory element, and nonvolatile memory device
US8227788B2 (en) 2008-11-19 2012-07-24 Panasonic Corporation Nonvolatile memory element, and nonvolatile memory device
JP2011040579A (ja) * 2009-08-11 2011-02-24 Toshiba Corp 抵抗変化メモリ
WO2011052239A1 (fr) * 2009-11-02 2011-05-05 パナソニック株式会社 Dispositif de mémoire non volatile à résistance variable et procédé de formation d'une cellule de mémoire
CN102414819A (zh) * 2009-11-02 2012-04-11 松下电器产业株式会社 电阻变化型非易失性存储装置以及存储器单元的形成方法
JP5406314B2 (ja) * 2010-01-25 2014-02-05 パナソニック株式会社 不揮発性半導体記憶素子の製造方法および不揮発性半導体記憶装置の製造方法
WO2011089682A1 (fr) * 2010-01-25 2011-07-28 パナソニック株式会社 Procédé de fabrication d'un élément de mémorisation semi-conducteur non volatile et procédé de fabrication d'un dispositif de mémorisation semi-conducteur non volatile
US8450182B2 (en) 2010-01-25 2013-05-28 Panasonic Corporation Method of manufacturing non-volatile semiconductor memory element and method of manufacturing non-volatile semiconductor memory device
JP2011160370A (ja) * 2010-02-04 2011-08-18 Rohm Co Ltd プログラマブルロジックデバイスおよびそれを用いた電子機器
US8354660B2 (en) 2010-03-16 2013-01-15 Sandisk 3D Llc Bottom electrodes for use with metal oxide resistivity switching layers
US8772749B2 (en) 2010-03-16 2014-07-08 Sandisk 3D Llc Bottom electrodes for use with metal oxide resistivity switching layers
US8592798B2 (en) 2010-04-21 2013-11-26 Panasonic Corporation Non-volatile storage device and method for manufacturing the same
US8785238B2 (en) 2010-07-01 2014-07-22 Panasonic Corporation Nonvolatile memory element and method for manufacturing same
US8389971B2 (en) 2010-10-14 2013-03-05 Sandisk 3D Llc Memory cells having storage elements that share material layers with steering elements and methods of forming the same
US8841648B2 (en) 2010-10-14 2014-09-23 Sandisk 3D Llc Multi-level memory arrays with memory cells that employ bipolar storage elements and methods of forming the same
US8969845B2 (en) 2010-10-14 2015-03-03 Sandisk 3D Llc Memory cells having storage elements that share material layers with steering elements and methods of forming the same
US8981331B2 (en) 2010-10-14 2015-03-17 Sandisk 3D Llc Memory cells having storage elements that share material layers with steering elements and methods of forming the same
US9105576B2 (en) 2010-10-14 2015-08-11 Sandisk 3D Llc Multi-level memory arrays with memory cells that employ bipolar storage elements and methods of forming the same
US9105332B2 (en) 2012-03-15 2015-08-11 Panasonic Intellectual Property Management Co., Ltd. Variable resistance nonvolatile memory device

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