+

WO2009044566A1 - Film pour traitement de tranche semi-conductrice - Google Patents

Film pour traitement de tranche semi-conductrice Download PDF

Info

Publication number
WO2009044566A1
WO2009044566A1 PCT/JP2008/056115 JP2008056115W WO2009044566A1 WO 2009044566 A1 WO2009044566 A1 WO 2009044566A1 JP 2008056115 W JP2008056115 W JP 2008056115W WO 2009044566 A1 WO2009044566 A1 WO 2009044566A1
Authority
WO
WIPO (PCT)
Prior art keywords
semiconductor wafer
film
wafer processing
adhered
processing
Prior art date
Application number
PCT/JP2008/056115
Other languages
English (en)
Japanese (ja)
Inventor
Yosuke Okawara
Hiromitsu Maruyama
Yasumasa Morishima
Shinichi Ishiwata
Original Assignee
The Furukawa Electric Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by The Furukawa Electric Co., Ltd. filed Critical The Furukawa Electric Co., Ltd.
Publication of WO2009044566A1 publication Critical patent/WO2009044566A1/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/27—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H01L2221/68336—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding involving stretching of the auxiliary support post dicing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/27—Manufacturing methods
    • H01L2224/274—Manufacturing methods by blanket deposition of the material of the layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/2919—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H01L2224/83191—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H01L2224/83855—Hardening the adhesive by curing, i.e. thermosetting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01004—Beryllium [Be]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01019—Potassium [K]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01027—Cobalt [Co]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01074—Tungsten [W]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06—Polymers
    • H01L2924/0665—Epoxy resin
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06—Polymers
    • H01L2924/078—Adhesive characteristics other than chemical
    • H01L2924/07802—Adhesive characteristics other than chemical not being an ohmic electrical conductor

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Die Bonding (AREA)
  • Dicing (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Adhesive Tapes (AREA)

Abstract

L'invention porte sur un film (10) pour un traitement de tranche semi-conductrice, qui est un film de traitement d'une structure multicouche comprenant un film adhésif sensiblement circulaire (11) devant être coupé en morceaux de la taille d'une puce conjointement avec une tranche semi-conductrice (W) par collage à la tranche semi-conductrice (W) et extension dans l'état collé, et un ruban adhésif sensiblement circulaire (12) collé à l'autre côté du film adhésif (11) qui est le côté opposé à celui collé à la tranche semi-conductrice (W). Le rapport du diamètre du film adhésif (11) sur celui du ruban adhésif (12) est inclus dans l'intervalle de 0,815-1.
PCT/JP2008/056115 2007-10-04 2008-03-28 Film pour traitement de tranche semi-conductrice WO2009044566A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-260829 2007-10-04
JP2007260829A JP2009094127A (ja) 2007-10-04 2007-10-04 半導体ウエハ加工用フィルム

Publications (1)

Publication Number Publication Date
WO2009044566A1 true WO2009044566A1 (fr) 2009-04-09

Family

ID=40525998

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/056115 WO2009044566A1 (fr) 2007-10-04 2008-03-28 Film pour traitement de tranche semi-conductrice

Country Status (2)

Country Link
JP (1) JP2009094127A (fr)
WO (1) WO2009044566A1 (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108735650A (zh) * 2017-04-17 2018-11-02 日东电工株式会社 切割芯片接合薄膜
CN109216211A (zh) * 2017-07-04 2019-01-15 日东电工株式会社 切割带、切割芯片接合薄膜和半导体装置制造方法
CN111524848A (zh) * 2019-02-01 2020-08-11 相丰科技股份有限公司 拉伸膜扩张方法及膜扩张机

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010287848A (ja) * 2009-06-15 2010-12-24 Sekisui Chem Co Ltd ダイシング−ダイボンディングテープ及び半導体チップの製造方法
JP5833005B2 (ja) * 2010-07-13 2015-12-16 日立化成株式会社 ダイシング・ダイボンディング一体型フィルム
JP2012079936A (ja) * 2010-10-01 2012-04-19 Nitto Denko Corp ダイシング・ダイボンドフィルム、及び、半導体装置の製造方法
JP5645593B2 (ja) * 2010-10-21 2014-12-24 株式会社ディスコ ウエーハの分割方法
JP5908543B2 (ja) * 2014-08-07 2016-04-26 日東電工株式会社 半導体装置の製造方法
JP6959874B2 (ja) * 2017-04-17 2021-11-05 日東電工株式会社 ダイシングダイボンドフィルム
JP6966214B2 (ja) * 2017-04-17 2021-11-10 日東電工株式会社 ダイシングダイボンドフィルム
WO2024084863A1 (fr) * 2022-10-21 2024-04-25 タキロンシーアイ株式会社 Film de base pour bande de fabrication de semi-conducteur

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005276971A (ja) * 2004-03-24 2005-10-06 Sumitomo Bakelite Co Ltd ダイシングシート機能付き半導体用接着フィルム、それを用いた半導体装置の製造方法及び半導体装置
JP2007053325A (ja) * 2005-07-20 2007-03-01 Furukawa Electric Co Ltd:The ダイシングダイボンドテープおよびダイシングテープ
JP2007288170A (ja) * 2006-03-20 2007-11-01 Hitachi Chem Co Ltd ダイボンドダイシングシート

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4770126B2 (ja) * 2003-06-06 2011-09-14 日立化成工業株式会社 接着シート
JP2007019151A (ja) * 2005-07-06 2007-01-25 Furukawa Electric Co Ltd:The ウエハ加工用テープおよびそれを用いたチップの製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005276971A (ja) * 2004-03-24 2005-10-06 Sumitomo Bakelite Co Ltd ダイシングシート機能付き半導体用接着フィルム、それを用いた半導体装置の製造方法及び半導体装置
JP2007053325A (ja) * 2005-07-20 2007-03-01 Furukawa Electric Co Ltd:The ダイシングダイボンドテープおよびダイシングテープ
JP2007288170A (ja) * 2006-03-20 2007-11-01 Hitachi Chem Co Ltd ダイボンドダイシングシート

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108735650A (zh) * 2017-04-17 2018-11-02 日东电工株式会社 切割芯片接合薄膜
CN108735650B (zh) * 2017-04-17 2023-08-04 日东电工株式会社 切割芯片接合薄膜
CN109216211A (zh) * 2017-07-04 2019-01-15 日东电工株式会社 切割带、切割芯片接合薄膜和半导体装置制造方法
CN109216211B (zh) * 2017-07-04 2023-10-13 日东电工株式会社 切割带、切割芯片接合薄膜和半导体装置制造方法
CN111524848A (zh) * 2019-02-01 2020-08-11 相丰科技股份有限公司 拉伸膜扩张方法及膜扩张机

Also Published As

Publication number Publication date
JP2009094127A (ja) 2009-04-30

Similar Documents

Publication Publication Date Title
WO2009044566A1 (fr) Film pour traitement de tranche semi-conductrice
WO2011063089A3 (fr) Adhésifs à surface modifiée
WO2012040075A3 (fr) Dispositif non plan ayant une ailette à contrainte uniaxiale et procédé de fabrication de ce dispositif
WO2012021196A3 (fr) Procédé de fabrication de dispositifs électroniques et dispositifs électroniques
WO2011112387A3 (fr) Stratifiés multicouches reconfigurables et procédés
WO2012078249A3 (fr) Dispositifs adhésifs à utilisation étendue, à retrait facile, à haute capacité
EP1719809A3 (fr) Laminés autocollants
WO2009049651A8 (fr) Bande adhésive
WO2008024739A3 (fr) Composite élastique
WO2010022154A3 (fr) Matériaux de libération
WO2010148398A3 (fr) Dispositif à couche mince et son procédé de fabrication
WO2007073520A3 (fr) Couches polymeres intermediaires comprenant un copolymere d’acetate ethylene-vinylique
WO2009066435A1 (fr) Stratifié de résine, feuille adhésive sensible à la pression, procédé de travail de partie adhérée utilisant la feuille adhésive sensible à la pression et dispositif pour séparer la feuille adhésive sensible à la pression
WO2011113008A3 (fr) Film à couches multiples pour applications photovoltaïques
WO2007011613A3 (fr) Procede pour proteger une couche de liaison dans un support de substrat utilisable dans un systeme de traitement au plasma
TW200730345A (en) Elastic laminates and methods of manufacturing same
WO2007050654A3 (fr) Films protecteurs et adhesifs autocollants
EP1757442A3 (fr) Article contenant des nanoparticules
EP2267090B8 (fr) Film adhésif et procédé d'amincissement de plaquette utilisant ledit film
WO2009078221A1 (fr) Feuille de découpage en dés, procédé de fabrication de feuille de découpage en dés et procédé de fabrication de composant électronique
WO2006108053A3 (fr) Systeme d'administration par diffusion et procedes de fabrication
WO2009028861A3 (fr) Boîtier de dispositif électroluminescent
EP1847277A4 (fr) Composition en forme de feuille utilisant un amnios et procédé de préparation de celle-ci
CA2627220A1 (fr) Stratifie extensible, procede de fabrication et article absorbant
WO2009105689A8 (fr) Récepteurs solaires à réflexions internes et motifs de réflectivité limitant le flux

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 08739233

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 08739233

Country of ref document: EP

Kind code of ref document: A1

点击 这是indexloc提供的php浏览器服务，不要输入任何密码和下载