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WO2009041595A1 - エレクトロルミネッセンス素子 - Google Patents

エレクトロルミネッセンス素子 Download PDF

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Publication number
WO2009041595A1
WO2009041595A1 PCT/JP2008/067457 JP2008067457W WO2009041595A1 WO 2009041595 A1 WO2009041595 A1 WO 2009041595A1 JP 2008067457 W JP2008067457 W JP 2008067457W WO 2009041595 A1 WO2009041595 A1 WO 2009041595A1
Authority
WO
WIPO (PCT)
Prior art keywords
represented
protective material
absolute value
organic compound
band gap
Prior art date
Application number
PCT/JP2008/067457
Other languages
English (en)
French (fr)
Inventor
Tomonori Akai
Yasuhiro Iizumi
Original Assignee
Dai Nippon Printing Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2008237064A external-priority patent/JP5407242B2/ja
Application filed by Dai Nippon Printing Co., Ltd. filed Critical Dai Nippon Printing Co., Ltd.
Priority to US12/680,418 priority Critical patent/US8384064B2/en
Publication of WO2009041595A1 publication Critical patent/WO2009041595A1/ja

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
    • H10K85/622—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene containing four rings, e.g. pyrene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/652—Cyanine dyes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
    • H10K85/6574—Polycyclic condensed heteroaromatic hydrocarbons comprising only oxygen in the heteroaromatic polycondensed ring system, e.g. cumarine dyes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2101/00—Properties of the organic materials covered by group H10K85/00
    • H10K2101/30—Highest occupied molecular orbital [HOMO], lowest unoccupied molecular orbital [LUMO] or Fermi energy values

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Nanotechnology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Composite Materials (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

　エレクトロルミネッセンス素子は、一対の電極と、当該電極間に配置され、少なくとも発光層を含むエレクトロルミネッセンス層と、を備えている。発光層は、少なくとも１種の有機化合物を含有するマトリックス材料と、当該マトリックス材料内に分散され、保護材料によりその表面が保護された量子ドットと、を有している。保護材料は第１の保護材料を含んでおり、当該第１の保護材料のイオン化ポテンシャルの絶対値をＩｐ（ｈ）、電子親和力の絶対値をＥａ（ｈ）、バンドギャップをＥｇ（ｈ）とし、前記有機化合物のイオン化ポテンシャルの絶対値をＩｐ（ｍ）、電子親和力の絶対値をＥａ（ｍ）、バンドギャップをＥｇ（ｍ）とし、前記量子ドットのバンドギャップをＥｇ（ｑ）としたときに、以下の条件（Ａ）～（Ｃ）；（Ａ）Ｉｐ（ｈ）＜Ｉｐ（ｍ）＋０．１ｅＶ、（Ｂ）Ｅａ（ｈ）＞Ｅａ（ｍ）－０．１ｅＶ、（Ｃ）Ｅｇ（ｑ）＜Ｅｇ（ｈ）＜Ｅｇ（ｍ）を全て満たすように構成されている。
PCT/JP2008/067457 2007-09-28 2008-09-26 エレクトロルミネッセンス素子 WO2009041595A1 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US12/680,418 US8384064B2 (en) 2007-09-28 2008-09-26 Electroluminescent device

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2007-255603 2007-09-28
JP2007255603 2007-09-28
JP2008-237064 2008-09-16
JP2008237064A JP5407242B2 (ja) 2007-09-28 2008-09-16 エレクトロルミネッセンス素子

Publications (1)

Publication Number Publication Date
WO2009041595A1 true WO2009041595A1 (ja) 2009-04-02

Family

ID=40511475

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/067457 WO2009041595A1 (ja) 2007-09-28 2008-09-26 エレクトロルミネッセンス素子

Country Status (1)

Country Link
WO (1) WO2009041595A1 (ja)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120305860A1 (en) * 2009-07-14 2012-12-06 Kurtin Juanita N Light conversion efficiency enhanced solar cell fabricated with downshifting nanomaterial
WO2013157495A1 (ja) * 2012-04-20 2013-10-24 コニカミノルタ株式会社 有機エレクトロルミネッセンス素子及び有機エレクトロルミネッセンス素子の製造方法
JP2014078381A (ja) * 2012-10-10 2014-05-01 Konica Minolta Inc 白色エレクトロルミネッセンスデバイス及び白色エレクトロルミネッセンスデバイスの製造方法
WO2020049738A1 (ja) * 2018-09-07 2020-03-12 シャープ株式会社 表示デバイス
US10763400B2 (en) 2013-08-21 2020-09-01 Osram Opto Semiconductor Gmbh Quantum dots having a nanocrystalline core, a nanocrystalline shell surrounding the core, and an insulator coating for the shell

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005502176A (ja) * 2001-09-04 2005-01-20 コーニンクレッカ　フィリップス　エレクトロニクス　エヌ　ヴィ 量子ドットを有するエレクトロルミネセント装置
JP2005026210A (ja) * 2003-06-10 2005-01-27 Fujitsu Ltd 有機ｅｌ素子
JP2006073642A (ja) * 2004-08-31 2006-03-16 Sanyo Electric Co Ltd 有機エレクトロルミネッセンス素子およびそれを備える有機エレクトロルミネッセンス装置
JP2007513478A (ja) * 2003-12-02 2007-05-24 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ エレクトロルミネッセント装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005502176A (ja) * 2001-09-04 2005-01-20 コーニンクレッカ　フィリップス　エレクトロニクス　エヌ　ヴィ 量子ドットを有するエレクトロルミネセント装置
JP2005026210A (ja) * 2003-06-10 2005-01-27 Fujitsu Ltd 有機ｅｌ素子
JP2007513478A (ja) * 2003-12-02 2007-05-24 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ エレクトロルミネッセント装置
JP2006073642A (ja) * 2004-08-31 2006-03-16 Sanyo Electric Co Ltd 有機エレクトロルミネッセンス素子およびそれを備える有機エレクトロルミネッセンス装置

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120305860A1 (en) * 2009-07-14 2012-12-06 Kurtin Juanita N Light conversion efficiency enhanced solar cell fabricated with downshifting nanomaterial
US10840403B2 (en) 2009-07-14 2020-11-17 Osram Opto Semiconductors Gmbh Optical downshifting layer
US11495703B2 (en) 2009-07-14 2022-11-08 Osram Opto Semiconductors Gmbh Optical downshifting layer
WO2013157495A1 (ja) * 2012-04-20 2013-10-24 コニカミノルタ株式会社 有機エレクトロルミネッセンス素子及び有機エレクトロルミネッセンス素子の製造方法
JPWO2013157495A1 (ja) * 2012-04-20 2015-12-21 コニカミノルタ株式会社 有機エレクトロルミネッセンス素子及び有機エレクトロルミネッセンス素子の製造方法
JP2014078381A (ja) * 2012-10-10 2014-05-01 Konica Minolta Inc 白色エレクトロルミネッセンスデバイス及び白色エレクトロルミネッセンスデバイスの製造方法
US10763400B2 (en) 2013-08-21 2020-09-01 Osram Opto Semiconductor Gmbh Quantum dots having a nanocrystalline core, a nanocrystalline shell surrounding the core, and an insulator coating for the shell
WO2020049738A1 (ja) * 2018-09-07 2020-03-12 シャープ株式会社 表示デバイス
US12268072B2 (en) 2018-09-07 2025-04-01 Sharp Kabushiki Kaisha Disclosure is related to a display device

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