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WO2009041466A1 - Annealing apparatus - Google Patents

Annealing apparatus Download PDF

Info

Publication number
WO2009041466A1
WO2009041466A1 PCT/JP2008/067244 JP2008067244W WO2009041466A1 WO 2009041466 A1 WO2009041466 A1 WO 2009041466A1 JP 2008067244 W JP2008067244 W JP 2008067244W WO 2009041466 A1 WO2009041466 A1 WO 2009041466A1
Authority
WO
WIPO (PCT)
Prior art keywords
wafer
light emitting
light
annealing apparatus
face
Prior art date
Application number
PCT/JP2008/067244
Other languages
French (fr)
Japanese (ja)
Inventor
Shigeru Kasai
Tomohiro Suzuki
Sumi Tanaka
Masatake Yoneda
Hiroyuki Miyashita
Original Assignee
Tokyo Electron Limited
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2008009503A external-priority patent/JP2009099925A/en
Application filed by Tokyo Electron Limited filed Critical Tokyo Electron Limited
Priority to CN200880102499A priority Critical patent/CN101828251A/en
Priority to KR1020117016768A priority patent/KR101168827B1/en
Priority to US12/680,221 priority patent/US8440939B2/en
Publication of WO2009041466A1 publication Critical patent/WO2009041466A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Recrystallisation Techniques (AREA)

Abstract

An annealing apparatus is provided with a processing chamber (1) wherein a wafer (W) is stored; heating sources (17a, 17b) which are arranged to face the surface of the wafer (W) and have a plurality of LEDs (33) for irradiating the wafer (W) with light; and light transmitting members (18a, 18b), which are arranged corresponding to the heating sources (17a, 17b) and transmit light emitted from the light emitting element (33). The heat sources (17a, 17b) are constituted by attaching a plurality of the light emitting elements (33) on a supporting body (32) to face the wafer (W), and each of the light emitting elements is separately covered with a lens layer (20) composed of a transparent resin.
PCT/JP2008/067244 2007-09-27 2008-09-25 Annealing apparatus WO2009041466A1 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN200880102499A CN101828251A (en) 2007-09-27 2008-09-25 Annealing apparatus
KR1020117016768A KR101168827B1 (en) 2007-09-27 2008-09-25 Led array
US12/680,221 US8440939B2 (en) 2007-09-27 2008-09-25 Annealing device

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2007251533 2007-09-27
JP2007-251533 2007-09-27
JP2008009503A JP2009099925A (en) 2007-09-27 2008-01-18 Annealing equipment
JP2008-009503 2008-01-18

Publications (1)

Publication Number Publication Date
WO2009041466A1 true WO2009041466A1 (en) 2009-04-02

Family

ID=40511349

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/067244 WO2009041466A1 (en) 2007-09-27 2008-09-25 Annealing apparatus

Country Status (1)

Country Link
WO (1) WO2009041466A1 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012014516A1 (en) * 2010-07-30 2012-02-02 Ｎｋワークス株式会社 Led light-emitting device
JP2012049164A (en) * 2010-08-24 2012-03-08 Disco Abrasive Syst Ltd Method for manufacturing light-emitting device

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05226693A (en) * 1992-02-17 1993-09-03 Nec Kansai Ltd Infrared light emitting diode
JP2002049326A (en) * 2000-08-02 2002-02-15 Fuji Photo Film Co Ltd Plane light source and display element using the same
JP2004506321A (en) * 2000-08-04 2004-02-26 オスラム　オプト　セミコンダクターズ　ゲゼルシャフト　ミット　ベシュレンクテル　ハフツング Radiation source and lens mold manufacturing method
JP2005175417A (en) * 2003-07-28 2005-06-30 Ricoh Co Ltd Light emitting element array, optical writing unit, and image forming apparatus
JP2005259847A (en) * 2004-03-10 2005-09-22 Nitto Denko Corp Manufacturing method of optical semiconductor device
JP2007116072A (en) * 2005-09-21 2007-05-10 Tokyo Electron Ltd Heat treatment device and storage medium
JP2008016545A (en) * 2006-07-04 2008-01-24 Tokyo Electron Ltd Device and method of annealing
JP2008227435A (en) * 2006-09-05 2008-09-25 Tokyo Electron Ltd Annealing equipment

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05226693A (en) * 1992-02-17 1993-09-03 Nec Kansai Ltd Infrared light emitting diode
JP2002049326A (en) * 2000-08-02 2002-02-15 Fuji Photo Film Co Ltd Plane light source and display element using the same
JP2004506321A (en) * 2000-08-04 2004-02-26 オスラム　オプト　セミコンダクターズ　ゲゼルシャフト　ミット　ベシュレンクテル　ハフツング Radiation source and lens mold manufacturing method
JP2005175417A (en) * 2003-07-28 2005-06-30 Ricoh Co Ltd Light emitting element array, optical writing unit, and image forming apparatus
JP2005259847A (en) * 2004-03-10 2005-09-22 Nitto Denko Corp Manufacturing method of optical semiconductor device
JP2007116072A (en) * 2005-09-21 2007-05-10 Tokyo Electron Ltd Heat treatment device and storage medium
JP2008016545A (en) * 2006-07-04 2008-01-24 Tokyo Electron Ltd Device and method of annealing
JP2008227435A (en) * 2006-09-05 2008-09-25 Tokyo Electron Ltd Annealing equipment

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012014516A1 (en) * 2010-07-30 2012-02-02 Ｎｋワークス株式会社 Led light-emitting device
JPWO2012014516A1 (en) * 2010-07-30 2013-09-12 Ｎｋワークス株式会社 LED light emitting device
JP2012049164A (en) * 2010-08-24 2012-03-08 Disco Abrasive Syst Ltd Method for manufacturing light-emitting device

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