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WO2008136316A1 - Structure de substrat laminé et son procédé de fabrication - Google Patents

Structure de substrat laminé et son procédé de fabrication Download PDF

Info

Publication number
WO2008136316A1
WO2008136316A1 PCT/JP2008/057801 JP2008057801W WO2008136316A1 WO 2008136316 A1 WO2008136316 A1 WO 2008136316A1 JP 2008057801 W JP2008057801 W JP 2008057801W WO 2008136316 A1 WO2008136316 A1 WO 2008136316A1
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
manufacturing
same
substrate structure
laminated substrate
Prior art date
Application number
PCT/JP2008/057801
Other languages
English (en)
Japanese (ja)
Inventor
Manabu Tamura
Shigefumi Sakai
Original Assignee
Alps Electric Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Alps Electric Co., Ltd. filed Critical Alps Electric Co., Ltd.
Priority to JP2009512938A priority Critical patent/JPWO2008136316A1/ja
Publication of WO2008136316A1 publication Critical patent/WO2008136316A1/fr

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/50—Devices controlled by mechanical forces, e.g. pressure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/0032—Packages or encapsulation
    • B81B7/007—Interconnections between the MEMS and external electrical signals
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/0802—Details
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/125—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by capacitive pick-up
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/62—Capacitors having potential barriers
    • H10D1/66—Conductor-insulator-semiconductor capacitors, e.g. MOS capacitors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Printing Elements For Providing Electric Connections Between Printed Circuits (AREA)
  • Micromachines (AREA)
  • Pressure Sensors (AREA)

Abstract

L'invention concerne une structure de substrat laminé dans laquelle une conductivité électrique entre un élément conducteur pénétrant à travers un substrat et un substrat conducteur assemblé au substrat est élevée. De manière spécifique, un élément conducteur (12) est noyé dans un substrat en verre (11). Une couche métallique (13) servant de couche conductrice est formée sur une surface majeure (11b) du substrat en verre (11) de façon à être électriquement connectée avec l'une des parties exposées de l'élément conducteur (12). Une couche de siliciure de métal (14) est formée sur la couche métallique (13). Un substrat de silicium (15) est assemblé à la surface majeure (11b) du substrat en verre (11).
PCT/JP2008/057801 2007-04-26 2008-04-23 Structure de substrat laminé et son procédé de fabrication WO2008136316A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009512938A JPWO2008136316A1 (ja) 2007-04-26 2008-04-23 積層基板構造体及びその製造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007117422 2007-04-26
JP2007-117422 2007-04-26

Publications (1)

Publication Number Publication Date
WO2008136316A1 true WO2008136316A1 (fr) 2008-11-13

Family

ID=39943428

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/057801 WO2008136316A1 (fr) 2007-04-26 2008-04-23 Structure de substrat laminé et son procédé de fabrication

Country Status (2)

Country Link
JP (1) JPWO2008136316A1 (fr)
WO (1) WO2008136316A1 (fr)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012102252A1 (fr) * 2011-01-27 2012-08-02 パナソニック株式会社 Substrat équipé d'une électrode traversante et son procédé de fabrication
CN103508410A (zh) * 2012-06-21 2014-01-15 罗伯特·博世有限公司 用于制造具有电覆镀通孔的构件的方法
JP2014016165A (ja) * 2012-07-05 2014-01-30 Seiko Epson Corp 半導体素子および電子機器
CN109425757A (zh) * 2017-09-01 2019-03-05 精工爱普生株式会社 物理量传感器、电子设备和移动体
JP2022027842A (ja) * 2015-10-02 2022-02-14 Ａｇｃ株式会社 ガラス基板、積層基板、および積層体

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11177200A (ja) * 1997-12-05 1999-07-02 Toshiba Corp 回路基板、回路基板の製造方法、回路基板の検査方法および回路基板の製造装置
JP2001129800A (ja) * 1999-11-04 2001-05-15 Japan Science & Technology Corp フィードスルー付き基板とその製造方法
JP2001264677A (ja) * 2000-03-15 2001-09-26 Olympus Optical Co Ltd 走査ミラー

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10259039A (ja) * 1997-03-18 1998-09-29 Fujitsu Ltd 陽極接合方法及び装置
US6078103A (en) * 1998-10-29 2000-06-20 Mcdonnell Douglas Corporation Dimpled contacts for metal-to-semiconductor connections, and methods for fabricating same
DE60035179T2 (de) * 2000-04-28 2008-02-21 Stmicroelectronics S.R.L., Agrate Brianza Struktur zur elektrischen Verbindung eines ersten mit einem darüberliegenden zweiten Halbleitermaterial, diese elektrische Verbindung verwendendes Komposit und ihre Herstellung
EP1219565A1 (fr) * 2000-12-29 2002-07-03 STMicroelectronics S.r.l. Méthode de fabrication de dispositifs intégrés avec des interconnexions sur des tranches séparées et leur empilage

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11177200A (ja) * 1997-12-05 1999-07-02 Toshiba Corp 回路基板、回路基板の製造方法、回路基板の検査方法および回路基板の製造装置
JP2001129800A (ja) * 1999-11-04 2001-05-15 Japan Science & Technology Corp フィードスルー付き基板とその製造方法
JP2001264677A (ja) * 2000-03-15 2001-09-26 Olympus Optical Co Ltd 走査ミラー

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012102252A1 (fr) * 2011-01-27 2012-08-02 パナソニック株式会社 Substrat équipé d'une électrode traversante et son procédé de fabrication
CN103081094A (zh) * 2011-01-27 2013-05-01 松下电器产业株式会社 附带贯通电极的基板及其制造方法
JPWO2012102252A1 (ja) * 2011-01-27 2014-06-30 パナソニック株式会社 貫通電極付基板およびその製造方法
CN103508410A (zh) * 2012-06-21 2014-01-15 罗伯特·博世有限公司 用于制造具有电覆镀通孔的构件的方法
CN103508410B (zh) * 2012-06-21 2017-07-18 罗伯特·博世有限公司 用于制造具有电覆镀通孔的构件的方法
JP2014016165A (ja) * 2012-07-05 2014-01-30 Seiko Epson Corp 半導体素子および電子機器
JP2022027842A (ja) * 2015-10-02 2022-02-14 Ａｇｃ株式会社 ガラス基板、積層基板、および積層体
JP7298075B2 (ja) 2015-10-02 2023-06-27 Ａｇｃ株式会社 ガラス基板、積層基板、および積層体
CN109425757A (zh) * 2017-09-01 2019-03-05 精工爱普生株式会社 物理量传感器、电子设备和移动体
EP3450991A1 (fr) * 2017-09-01 2019-03-06 Seiko Epson Corporation Capteur de quantité physique, dispositif électronique et véhicule

Also Published As

Publication number Publication date
JPWO2008136316A1 (ja) 2010-07-29

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