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WO2008120578A1 - 金属膜研磨用パッドおよびそれを用いる金属膜の研磨方法 - Google Patents

金属膜研磨用パッドおよびそれを用いる金属膜の研磨方法 Download PDF

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Publication number
WO2008120578A1
WO2008120578A1 PCT/JP2008/055029 JP2008055029W WO2008120578A1 WO 2008120578 A1 WO2008120578 A1 WO 2008120578A1 JP 2008055029 W JP2008055029 W JP 2008055029W WO 2008120578 A1 WO2008120578 A1 WO 2008120578A1
Authority
WO
WIPO (PCT)
Prior art keywords
metal film
polishing
polishing pad
same
disclosed
Prior art date
Application number
PCT/JP2008/055029
Other languages
English (en)
French (fr)
Inventor
Mitsuru Kato
Hirofumi Kikuchi
Chihiro Okamoto
Shinya Kato
Original Assignee
Kuraray Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kuraray Co., Ltd. filed Critical Kuraray Co., Ltd.
Priority to EP08722419.2A priority Critical patent/EP2128894B1/en
Priority to KR1020097021874A priority patent/KR101084808B1/ko
Priority to CN2008800167873A priority patent/CN101681825B/zh
Priority to JP2008542957A priority patent/JP5389448B2/ja
Priority to US12/531,626 priority patent/US8308527B2/en
Publication of WO2008120578A1 publication Critical patent/WO2008120578A1/ja
Priority to IL201028A priority patent/IL201028A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G18/00—Polymeric products of isocyanates or isothiocyanates
    • C08G18/06—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen
    • C08G18/28—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen characterised by the compounds used containing active hydrogen
    • C08G18/30—Low-molecular-weight compounds
    • C08G18/32—Polyhydroxy compounds; Polyamines; Hydroxyamines
    • C08G18/3203—Polyhydroxy compounds
    • C08G18/3212—Polyhydroxy compounds containing cycloaliphatic groups
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G18/00—Polymeric products of isocyanates or isothiocyanates
    • C08G18/06—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen
    • C08G18/28—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen characterised by the compounds used containing active hydrogen
    • C08G18/40—High-molecular-weight compounds
    • C08G18/42—Polycondensates having carboxylic or carbonic ester groups in the main chain
    • C08G18/4236—Polycondensates having carboxylic or carbonic ester groups in the main chain containing only aliphatic groups
    • C08G18/4238—Polycondensates having carboxylic or carbonic ester groups in the main chain containing only aliphatic groups derived from dicarboxylic acids and dialcohols
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G18/00—Polymeric products of isocyanates or isothiocyanates
    • C08G18/06—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen
    • C08G18/28—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen characterised by the compounds used containing active hydrogen
    • C08G18/40—High-molecular-weight compounds
    • C08G18/48—Polyethers
    • C08G18/4833—Polyethers containing oxyethylene units
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G18/00—Polymeric products of isocyanates or isothiocyanates
    • C08G18/06—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen
    • C08G18/28—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen characterised by the compounds used containing active hydrogen
    • C08G18/40—High-molecular-weight compounds
    • C08G18/48—Polyethers
    • C08G18/4854—Polyethers containing oxyalkylene groups having four carbon atoms in the alkylene group
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G18/00—Polymeric products of isocyanates or isothiocyanates
    • C08G18/06—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen
    • C08G18/28—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen characterised by the compounds used containing active hydrogen
    • C08G18/65—Low-molecular-weight compounds having active hydrogen with high-molecular-weight compounds having active hydrogen
    • C08G18/66—Compounds of groups C08G18/42, C08G18/48, or C08G18/52
    • C08G18/6633—Compounds of group C08G18/42
    • C08G18/6637—Compounds of group C08G18/42 with compounds of group C08G18/32 or polyamines of C08G18/38
    • C08G18/664—Compounds of group C08G18/42 with compounds of group C08G18/32 or polyamines of C08G18/38 with compounds of group C08G18/3203
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G18/00—Polymeric products of isocyanates or isothiocyanates
    • C08G18/06—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen
    • C08G18/28—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen characterised by the compounds used containing active hydrogen
    • C08G18/65—Low-molecular-weight compounds having active hydrogen with high-molecular-weight compounds having active hydrogen
    • C08G18/66—Compounds of groups C08G18/42, C08G18/48, or C08G18/52
    • C08G18/6666—Compounds of group C08G18/48 or C08G18/52
    • C08G18/667—Compounds of group C08G18/48 or C08G18/52 with compounds of group C08G18/32 or polyamines of C08G18/38
    • C08G18/6674—Compounds of group C08G18/48 or C08G18/52 with compounds of group C08G18/32 or polyamines of C08G18/38 with compounds of group C08G18/3203

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Polyurethanes Or Polyureas (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Manufacture Of Macromolecular Shaped Articles (AREA)

Abstract

　半導体基板上などに形成された金属膜を研磨する際に、被研磨面の平坦性および平坦化効率の向上が達成でき、且つスクラッチの発生が少ない研磨パッド、および該研磨パッドを用いる金属膜の研磨方法を提供すること。 　８０°Cにおける貯蔵弾性率が２００～９００ＭＰａであり、且つ１１０°Cにおける貯蔵弾性率が４０ＭＰａ以下である金属膜研磨用パッド、および該パッドを用いる金属膜の研磨方法。
PCT/JP2008/055029 2007-03-20 2008-03-19 金属膜研磨用パッドおよびそれを用いる金属膜の研磨方法 WO2008120578A1 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
EP08722419.2A EP2128894B1 (en) 2007-03-20 2008-03-19 Metal film polishing pad and method for polishing metal film using the same
KR1020097021874A KR101084808B1 (ko) 2007-03-20 2008-03-19 금속 막 연마용 패드 및 그것을 이용하는 금속 막의 연마 방법
CN2008800167873A CN101681825B (zh) 2007-03-20 2008-03-19 金属膜抛光用垫和使用该金属膜抛光用垫的金属膜的抛光方法
JP2008542957A JP5389448B2 (ja) 2007-03-20 2008-03-19 金属膜研磨用パッドおよびそれを用いる金属膜の研磨方法
US12/531,626 US8308527B2 (en) 2007-03-20 2008-03-19 Metal film polishing pad and method for polishing metal film using the same
IL201028A IL201028A (en) 2007-03-20 2009-09-17 A metal layer polishing pad and a metal layer polishing method that uses it

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007071976 2007-03-20
JP2007-071976 2007-03-20

Publications (1)

Publication Number Publication Date
WO2008120578A1 true WO2008120578A1 (ja) 2008-10-09

Family

ID=39808160

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/055029 WO2008120578A1 (ja) 2007-03-20 2008-03-19 金属膜研磨用パッドおよびそれを用いる金属膜の研磨方法

Country Status (8)

Country Link
US (1) US8308527B2 (ja)
EP (1) EP2128894B1 (ja)
JP (1) JP5389448B2 (ja)
KR (1) KR101084808B1 (ja)
CN (1) CN101681825B (ja)
IL (1) IL201028A (ja)
TW (1) TWI386992B (ja)
WO (1) WO2008120578A1 (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010240770A (ja) * 2009-04-03 2010-10-28 Toyo Tire & Rubber Co Ltd 研磨パッド及びその製造方法
JP2019116616A (ja) * 2017-12-26 2019-07-18 Dic株式会社 研磨パッド及び研磨パッド用ウレタン樹脂組成物

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5193595B2 (ja) * 2005-09-22 2013-05-08 株式会社クラレ 高分子材料、それから得られる発泡体及びこれらを用いた研磨パッド
JP5789523B2 (ja) * 2012-01-10 2015-10-07 株式会社クラレ 研磨パッド、及び研磨パッドを用いた化学的機械的研磨方法
US20140225123A1 (en) * 2012-12-17 2014-08-14 Erdem Arkun REO/ALO/AlN TEMPLATE FOR III-N MATERIAL GROWTH ON SILICON
EP3225357B1 (en) * 2014-11-28 2019-10-30 Kuraray Co., Ltd. Polishing-layer molded body, and polishing pad
EP3038152A1 (en) * 2014-12-26 2016-06-29 Kabushiki Kaisha Toshiba Wiring board and semiconductor package including wiring board
EP3352944B1 (en) * 2015-09-25 2022-10-26 CMC Materials, Inc. Polyurethane cmp pads having a high modulus ratio
JP6619100B2 (ja) * 2016-07-29 2019-12-11 株式会社クラレ 研磨パッドおよびそれを用いた研磨方法
US20210309794A1 (en) * 2018-08-11 2021-10-07 Kuraray Co., Ltd. Polyurethane for polishing layer, polishing layer, and polishing pad
CN109535380B (zh) * 2018-12-19 2021-01-26 广州机械科学研究院有限公司 一种热交联型热塑型聚氨酯弹性体及其制备方法和应用
WO2021193468A1 (ja) * 2020-03-26 2021-09-30 富士紡ホールディングス株式会社 研磨パッド、研磨ユニット、研磨装置、及び研磨パッドの製造方法

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11322878A (ja) 1998-05-13 1999-11-26 Dainippon Ink & Chem Inc 泡含有ポリウレタン成形物の製造方法、泡含有成形物用ウレタン樹脂組成物及びそれを用いた研磨パッド
JP2000178374A (ja) 1998-12-15 2000-06-27 Toyo Tire & Rubber Co Ltd ポリウレタン発泡体の製造方法及び研磨シート
JP2000248034A (ja) 1999-03-02 2000-09-12 Mitsubishi Chemicals Corp 研磨材用ポリウレタン系樹脂組成物及びその発泡体
JP2001089548A (ja) 1999-09-22 2001-04-03 Toyo Tire & Rubber Co Ltd ポリウレタン発泡体の製造方法及び研磨シート
JP2002371154A (ja) 2000-12-08 2002-12-26 Kuraray Co Ltd 熱可塑性ポリウレタン発泡体およびその製造方法並びに該発泡体からなる研磨パッド
JP2004343016A (ja) * 2003-05-19 2004-12-02 Jsr Corp 研磨パッド及び研磨方法
JP2006111700A (ja) * 2004-10-14 2006-04-27 Jsr Corp 研磨パッド
JP2006159386A (ja) * 2004-12-10 2006-06-22 Toyo Tire & Rubber Co Ltd 研磨パッド
JP2007071976A (ja) 2005-09-05 2007-03-22 Fujifilm Corp 拡散シート

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100877383B1 (ko) * 2001-11-13 2009-01-07 도요 고무 고교 가부시키가이샤 연마 패드 및 그 제조 방법
US7871309B2 (en) * 2004-12-10 2011-01-18 Toyo Tire & Rubber Co., Ltd. Polishing pad
WO2007094869A2 (en) * 2005-10-31 2007-08-23 Applied Materials, Inc. Electrochemical method for ecmp polishing pad conditioning
JP2007214518A (ja) * 2006-02-13 2007-08-23 Fujifilm Corp 金属用研磨液

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11322878A (ja) 1998-05-13 1999-11-26 Dainippon Ink & Chem Inc 泡含有ポリウレタン成形物の製造方法、泡含有成形物用ウレタン樹脂組成物及びそれを用いた研磨パッド
JP2000178374A (ja) 1998-12-15 2000-06-27 Toyo Tire & Rubber Co Ltd ポリウレタン発泡体の製造方法及び研磨シート
JP2000248034A (ja) 1999-03-02 2000-09-12 Mitsubishi Chemicals Corp 研磨材用ポリウレタン系樹脂組成物及びその発泡体
JP2001089548A (ja) 1999-09-22 2001-04-03 Toyo Tire & Rubber Co Ltd ポリウレタン発泡体の製造方法及び研磨シート
JP2002371154A (ja) 2000-12-08 2002-12-26 Kuraray Co Ltd 熱可塑性ポリウレタン発泡体およびその製造方法並びに該発泡体からなる研磨パッド
JP2004343016A (ja) * 2003-05-19 2004-12-02 Jsr Corp 研磨パッド及び研磨方法
JP2006111700A (ja) * 2004-10-14 2006-04-27 Jsr Corp 研磨パッド
JP2006159386A (ja) * 2004-12-10 2006-06-22 Toyo Tire & Rubber Co Ltd 研磨パッド
JP2007071976A (ja) 2005-09-05 2007-03-22 Fujifilm Corp 拡散シート

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* Cited by examiner, † Cited by third party
Title
MASAHIRO KASHIWAGI ET AL.: "Science of CMP", 20 August 1997, SCIENCE FORUM K.K., pages: 113 - 119
See also references of EP2128894A4

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010240770A (ja) * 2009-04-03 2010-10-28 Toyo Tire & Rubber Co Ltd 研磨パッド及びその製造方法
JP2019116616A (ja) * 2017-12-26 2019-07-18 Dic株式会社 研磨パッド及び研磨パッド用ウレタン樹脂組成物
JP7259311B2 (ja) 2017-12-26 2023-04-18 Dic株式会社 研磨パッド及び研磨パッド用ウレタン樹脂組成物

Also Published As

Publication number Publication date
TW200908119A (en) 2009-02-16
EP2128894A1 (en) 2009-12-02
IL201028A0 (en) 2010-05-17
IL201028A (en) 2013-05-30
CN101681825B (zh) 2011-11-09
US8308527B2 (en) 2012-11-13
JPWO2008120578A1 (ja) 2010-07-15
EP2128894A4 (en) 2012-01-11
TWI386992B (zh) 2013-02-21
KR20090132607A (ko) 2009-12-30
KR101084808B1 (ko) 2011-11-21
US20100035521A1 (en) 2010-02-11
JP5389448B2 (ja) 2014-01-15
CN101681825A (zh) 2010-03-24
EP2128894B1 (en) 2018-04-25

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