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WO2008120341A1 - 電子銃及び電子ビーム露光装置 - Google Patents

電子銃及び電子ビーム露光装置 Download PDF

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Publication number
WO2008120341A1
WO2008120341A1 PCT/JP2007/056800 JP2007056800W WO2008120341A1 WO 2008120341 A1 WO2008120341 A1 WO 2008120341A1 JP 2007056800 W JP2007056800 W JP 2007056800W WO 2008120341 A1 WO2008120341 A1 WO 2008120341A1
Authority
WO
WIPO (PCT)
Prior art keywords
electron
emission surface
electrons
electrode
emission
Prior art date
Application number
PCT/JP2007/056800
Other languages
English (en)
French (fr)
Inventor
Hiroshi Yasuda
Takeshi Haraguchi
Hiroshi Shimoyama
Hidekazu Murata
Original Assignee
Advantest Corporation
Educational Foundation Meijo University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advantest Corporation, Educational Foundation Meijo University filed Critical Advantest Corporation
Priority to PCT/JP2007/056800 priority Critical patent/WO2008120341A1/ja
Priority to DE112007003418T priority patent/DE112007003418T5/de
Priority to JP2009507390A priority patent/JP4975095B2/ja
Priority to PCT/JP2007/069855 priority patent/WO2008120412A1/ja
Publication of WO2008120341A1 publication Critical patent/WO2008120341A1/ja
Priority to US12/586,792 priority patent/US8330344B2/en
Priority to JP2011197862A priority patent/JP2012044191A/ja

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/06—Electron sources; Electron guns
    • H01J37/063—Geometrical arrangement of electrodes for beam-forming
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/063—Electron sources
    • H01J2237/06308—Thermionic sources
    • H01J2237/06316—Schottky emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/063—Electron sources
    • H01J2237/06375—Arrangement of electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/065—Source emittance characteristics

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Electron Beam Exposure (AREA)
  • Electron Sources, Ion Sources (AREA)

Abstract

本発明は、電子源の昇華量を削減するとともに、ビームの放出角度を小さくして長期間安定に使用することのできる電子銃及び電子ビーム露光装置を提供することを目的とする。 本発明の電子銃は、電子源（２０）の電子放出面と対向して配置され、電子を加速する加速電極（２５）と磁界発生部（４１）とを備える電子加速部（４０）と、電子放出面と加速電極との間に配置され、当該電子放出面から電子を引き出す引き出し電極（２１）と、電子放出面の引き出し電極と反対側に配置され、電子源の側面からの電子放出を抑制するサプレッサー電極（２４）とを有し、電子源の材料の昇華が発生しない程度の低い温度に保ちながら電子放出面に電界を印加して熱電界放出電子を放出させる
PCT/JP2007/056800 2007-03-29 2007-03-29 電子銃及び電子ビーム露光装置 WO2008120341A1 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
PCT/JP2007/056800 WO2008120341A1 (ja) 2007-03-29 2007-03-29 電子銃及び電子ビーム露光装置
DE112007003418T DE112007003418T5 (de) 2007-03-29 2007-10-11 Elektronenkanone und Elektronenstrahlbelichtungsgerät
JP2009507390A JP4975095B2 (ja) 2007-03-29 2007-10-11 電子銃及び電子ビーム露光装置
PCT/JP2007/069855 WO2008120412A1 (ja) 2007-03-29 2007-10-11 電子銃及び電子ビーム露光装置
US12/586,792 US8330344B2 (en) 2007-03-29 2009-09-28 Electron gun minimizing sublimation of electron source and electron beam exposure apparatus using the same
JP2011197862A JP2012044191A (ja) 2007-03-29 2011-09-12 電子銃及び電子ビーム露光装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2007/056800 WO2008120341A1 (ja) 2007-03-29 2007-03-29 電子銃及び電子ビーム露光装置

Publications (1)

Publication Number Publication Date
WO2008120341A1 true WO2008120341A1 (ja) 2008-10-09

Family

ID=39807934

Family Applications (2)

Application Number Title Priority Date Filing Date
PCT/JP2007/056800 WO2008120341A1 (ja) 2007-03-29 2007-03-29 電子銃及び電子ビーム露光装置
PCT/JP2007/069855 WO2008120412A1 (ja) 2007-03-29 2007-10-11 電子銃及び電子ビーム露光装置

Family Applications After (1)

Application Number Title Priority Date Filing Date
PCT/JP2007/069855 WO2008120412A1 (ja) 2007-03-29 2007-10-11 電子銃及び電子ビーム露光装置

Country Status (3)

Country Link
US (1) US8330344B2 (ja)
DE (1) DE112007003418T5 (ja)
WO (2) WO2008120341A1 (ja)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2264738A1 (en) * 2009-06-18 2010-12-22 Carl Zeiss SMT Limited Electron gun used in a particle beam device
CN103765544A (zh) * 2011-09-26 2014-04-30 株式会社日立高新技术 场致发射型电子源
DE102014226812A1 (de) * 2014-12-22 2016-06-23 Siemens Aktiengesellschaft Vorrichtung zum Erzeugen eines Elektronenstrahls
US9754760B2 (en) 2014-12-09 2017-09-05 Hermes Microvision Inc. Charged particle source
CN115295376A (zh) * 2022-08-19 2022-11-04 中国科学院空间应用工程与技术中心 面向空间制造用的电子束枪小型化引出结构

Families Citing this family (27)

* Cited by examiner, † Cited by third party
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EP1947674B1 (en) * 2005-11-08 2015-06-17 Advantest Corporation Electron gun, electron beam exposure system and exposure method
JP2011034734A (ja) * 2009-07-30 2011-02-17 Stanley Electric Co Ltd 電界放出型電子源
US20110294071A1 (en) * 2010-05-28 2011-12-01 Canon Kabushiki Kaisha Electron gun, lithography apparatus, method of manufacturing article, and electron beam apparatus
PL2722394T3 (pl) * 2011-06-07 2018-09-28 Hero Ag Otrzymywanie oligosacharydów za pomocą procesu biotechnologicznego
CN104024147A (zh) * 2011-12-29 2014-09-03 埃尔瓦有限公司 电子器件的石墨烯栅极
US8928228B2 (en) 2011-12-29 2015-01-06 Elwha Llc Embodiments of a field emission device
US8810161B2 (en) 2011-12-29 2014-08-19 Elwha Llc Addressable array of field emission devices
US8692226B2 (en) 2011-12-29 2014-04-08 Elwha Llc Materials and configurations of a field emission device
US9018861B2 (en) 2011-12-29 2015-04-28 Elwha Llc Performance optimization of a field emission device
US8810131B2 (en) 2011-12-29 2014-08-19 Elwha Llc Field emission device with AC output
US8575842B2 (en) 2011-12-29 2013-11-05 Elwha Llc Field emission device
US9349562B2 (en) 2011-12-29 2016-05-24 Elwha Llc Field emission device with AC output
US9646798B2 (en) 2011-12-29 2017-05-09 Elwha Llc Electronic device graphene grid
US8946992B2 (en) 2011-12-29 2015-02-03 Elwha Llc Anode with suppressor grid
US9171690B2 (en) 2011-12-29 2015-10-27 Elwha Llc Variable field emission device
US8970113B2 (en) 2011-12-29 2015-03-03 Elwha Llc Time-varying field emission device
US8779376B2 (en) * 2012-01-09 2014-07-15 Fei Company Determination of emission parameters from field emission sources
US9659735B2 (en) 2012-09-12 2017-05-23 Elwha Llc Applications of graphene grids in vacuum electronics
US9659734B2 (en) 2012-09-12 2017-05-23 Elwha Llc Electronic device multi-layer graphene grid
WO2014142745A1 (en) * 2013-03-10 2014-09-18 Tao Luo Permanent magnet based high performance multiaxis immersion electron lens array with low axial leakage field
JP2015015200A (ja) * 2013-07-08 2015-01-22 株式会社日立ハイテクノロジーズ 電子銃および電子顕微鏡
JP2019527918A (ja) 2016-08-08 2019-10-03 エーエスエムエル ネザーランズ ビー．ブイ． 電子エミッタ及びそれを製作する方法
JP6279783B2 (ja) * 2017-03-10 2018-02-14 株式会社ニューフレアテクノロジー カソード及びカソードの製造方法
CN112055886A (zh) 2018-02-27 2020-12-08 卡尔蔡司MultiSEM有限责任公司 带电粒子多束系统及方法
JP7458384B2 (ja) 2019-05-21 2024-03-29 株式会社日立ハイテク 電子銃および電子銃を備えた荷電粒子線装置
WO2021130837A1 (ja) * 2019-12-24 2021-07-01 株式会社日立ハイテク 電子源、電子線装置および電子源の製造方法
EP3940740A1 (en) * 2020-07-16 2022-01-19 ASML Netherlands B.V. Emitter for emitting charged particles

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JPS6476654A (en) * 1987-09-14 1989-03-22 Jeol Ltd Lens for field emission type electron gun
JPH06132979A (ja) * 1992-10-16 1994-05-13 Ando Electric Co Ltd セルトラヒック発生器
JP2000285839A (ja) * 1999-03-30 2000-10-13 Toshiba Corp 電子銃とそれを用いた露光装置および露光方法
JP2001325910A (ja) * 2000-05-16 2001-11-22 Denki Kagaku Kogyo Kk 電子銃とその使用方法
JP2005190758A (ja) * 2003-12-25 2005-07-14 Denki Kagaku Kogyo Kk 電子源

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JPS5912534A (ja) * 1982-07-13 1984-01-23 Fujitsu Ltd 熱電子放出陰極
JP2775071B2 (ja) 1989-02-22 1998-07-09 日本電信電話株式会社 荷電粒子ビーム発生装置
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JP4268348B2 (ja) * 2001-06-26 2009-05-27 株式会社日立製作所 ショットキー電子銃及び電子線装置
JP4601923B2 (ja) * 2003-07-16 2010-12-22 株式会社東芝 電子銃とそれを用いた電子ビーム照射装置
US7176610B2 (en) 2004-02-10 2007-02-13 Toshiba Machine America, Inc. High brightness thermionic cathode
EP1947674B1 (en) * 2005-11-08 2015-06-17 Advantest Corporation Electron gun, electron beam exposure system and exposure method

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6476654A (en) * 1987-09-14 1989-03-22 Jeol Ltd Lens for field emission type electron gun
JPH06132979A (ja) * 1992-10-16 1994-05-13 Ando Electric Co Ltd セルトラヒック発生器
JP2000285839A (ja) * 1999-03-30 2000-10-13 Toshiba Corp 電子銃とそれを用いた露光装置および露光方法
JP2001325910A (ja) * 2000-05-16 2001-11-22 Denki Kagaku Kogyo Kk 電子銃とその使用方法
JP2005190758A (ja) * 2003-12-25 2005-07-14 Denki Kagaku Kogyo Kk 電子源

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2264738A1 (en) * 2009-06-18 2010-12-22 Carl Zeiss SMT Limited Electron gun used in a particle beam device
US8890444B2 (en) 2009-06-18 2014-11-18 Carl Zeiss Microscopy Limited Electron gun used in particle beam device
CN103765544A (zh) * 2011-09-26 2014-04-30 株式会社日立高新技术 场致发射型电子源
CN103765544B (zh) * 2011-09-26 2016-05-11 株式会社日立高新技术 场致发射型电子源
US9799484B2 (en) 2014-12-09 2017-10-24 Hermes Microvision, Inc. Charged particle source
US9754760B2 (en) 2014-12-09 2017-09-05 Hermes Microvision Inc. Charged particle source
US9812283B2 (en) 2014-12-09 2017-11-07 Hermes Microvision, Inc. Charged particle source
US10032600B2 (en) 2014-12-09 2018-07-24 Hermes Microvision, Inc. Charged particle source
US10468227B2 (en) 2014-12-09 2019-11-05 Hermes Microvision, Inc. Charged particle source
US11075053B2 (en) 2014-12-09 2021-07-27 Asml Netherlands B.V. Charged particle source
DE102014226812A1 (de) * 2014-12-22 2016-06-23 Siemens Aktiengesellschaft Vorrichtung zum Erzeugen eines Elektronenstrahls
US9916960B2 (en) 2014-12-22 2018-03-13 Siemens Aktiengesellschaft Device for producing an electron beam
CN115295376A (zh) * 2022-08-19 2022-11-04 中国科学院空间应用工程与技术中心 面向空间制造用的电子束枪小型化引出结构

Also Published As

Publication number Publication date
WO2008120412A1 (ja) 2008-10-09
US8330344B2 (en) 2012-12-11
DE112007003418T5 (de) 2010-01-21
US20100019648A1 (en) 2010-01-28

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