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WO2008119766A1 - Capteur de luminosité ambiante - Google Patents

Capteur de luminosité ambiante Download PDF

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Publication number
WO2008119766A1
WO2008119766A1 PCT/EP2008/053751 EP2008053751W WO2008119766A1 WO 2008119766 A1 WO2008119766 A1 WO 2008119766A1 EP 2008053751 W EP2008053751 W EP 2008053751W WO 2008119766 A1 WO2008119766 A1 WO 2008119766A1
Authority
WO
WIPO (PCT)
Prior art keywords
ambient light
light sensor
sensor according
photodiodes
organic
Prior art date
Application number
PCT/EP2008/053751
Other languages
German (de)
English (en)
Inventor
Jens FÜRST
Original Assignee
Siemens Aktiengesellschaft
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Aktiengesellschaft filed Critical Siemens Aktiengesellschaft
Publication of WO2008119766A1 publication Critical patent/WO2008119766A1/fr

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/02—Details
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/02—Details
    • G01J1/0266—Field-of-view determination; Aiming or pointing of a photometer; Adjusting alignment; Encoding angular position; Size of the measurement area; Position tracking; Photodetection involving different fields of view for a single detector
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/02—Details
    • G01J1/0271—Housings; Attachments or accessories for photometers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/02—Details
    • G01J1/029—Multi-channel photometry
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/02—Details
    • G01J1/04—Optical or mechanical part supplementary adjustable parts
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/02—Details
    • G01J1/04—Optical or mechanical part supplementary adjustable parts
    • G01J1/0403—Mechanical elements; Supports for optical elements; Scanning arrangements
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G01J1/4204—Photometry, e.g. photographic exposure meter using electric radiation detectors with determination of ambient light
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G01J1/4228—Photometry, e.g. photographic exposure meter using electric radiation detectors arrangements with two or more detectors, e.g. for sensitivity compensation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
    • H10K39/30—Devices controlled by radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
    • H10K39/601—Assemblies of multiple devices comprising at least one organic radiation-sensitive element
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
    • H10K85/211—Fullerenes, e.g. C60
    • H10K85/215—Fullerenes, e.g. C60 comprising substituents, e.g. PCBM
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Definitions

  • the invention relates to an ambient light sensor for monitoring the intensity of room light in enclosed spaces with at least one photodetector.
  • photodetectors with the largest possible reception angle are required. Such detectors are particularly necessary for so-called “adaptive-light” applications in which the illumination in the room is selectively adaptable elaborate optics is provided to capture the largest possible solid angle.
  • the sensitivity curve of silicon (Si) photodiodes is very poorly matched to that of the human eye.
  • Si photodiode is particularly sensitive in the infrared spectral range around 850 nm, while the human eye best recognizes green light around 530 nm.
  • additional interference filters are therefore necessary which filter away the long-wave light. It should be noted that the blocking of long-wave light is much more complex than of short-wave light.
  • WO 2004/026012 Al a multi-functional housing is already known, which can be used for the above purposes. If necessary, nanoporous fullerene layers according to DE 10 2004 036 793 A1 could also be used in conjunction with organic photovoltaics.
  • the invention relates to an ambient light sensor in which photodiodes based on organic semiconductor materials are present.
  • photodiodes can be formed in a large area in predeterminable geometry and, when used as an ambient light sensor in closed rooms, can be directed to different areas of the room.
  • the invention makes use of the easy handling of the organic semiconductor materials. It is now possible either to provide large-area flexible substrates with planar photodiodes in regions and then to bend them into the appropriate spatial form, or to standardize individual detectors, each having a planar photodiode, to form a suitable spatial form. In the first case, in particular a truncated cone and in the second case, in particular a cube come into question as a three-dimensional form. In both cases, it is possible to cover a specifiable spatial area which depends on the number of planar photodiodes, in particular an area with a nearly 360 ° solid angle.
  • Photodiodes based on organic semiconductor materials offer the possibility of producing large-area photodiodes with high quantum efficiencies, for example 50 to 85%, in the visible region of the spectrum.
  • the thin organic layer systems used in this case can be produced cost-effectively with known production methods such as so-called spin-coating, doctoring or printing methods, thereby enabling a considerable price advantage over known semiconductor components, especially for large-area arrangements (devices).
  • the organic photodiodes consist z. B. from a vertical Layer system: ITO bottom electrode / PEDOT: PSS / P3HT PCBM blend / Ca-Ag top electrode. Selective electrodes are necessary to ensure a diode behavior of the device.
  • the anode should be characterized by a high, the cathode by a low work function.
  • the blend of the two components, namely P3HT (absorber and hole transport component) and PCBM (electron acceptor and transport component) acts as a bulk heterojunction material form within the entire layer volume.
  • the proposed material system has a sensitivity curve very close to that of the human eye. Thus eliminating path filtering of the infrared spectral components as in silicon technology.
  • organic photodetectors can be processed over a large area on flexible substrates such as PET films.
  • a plurality of large-area photodetector elements of a few mm 2 to cm 2 are preferably applied to a flexible substrate, such as a PET film. Subsequently, the detector is bent into a circle or cone and installed in a holder which contains the control electronics. Such a detector has a solid angle sensitivity range of 360 °.
  • rigid substrates for the large-area photodetector elements with several such elements being able to be combined to form a geometrical spatial body. In particular, five elements can form surfaces of a cube and cover the main directions of a room.
  • the described sensor can be advantageously designed as an energy-autonomous sensor by combination with an organic solar cell.
  • the figures show a schematic representation for the production of a cost-effective 360 ° photodetector. In detail shows
  • FIG. 1 shows the production of large area detectors on flexible substrates
  • Figure 2 shows the bending of the substrate with the detectors to a
  • FIG. 3 shows a large-area detector on a rigid substrate and FIG. 4 shows the combination of detectors from FIG. 3 with a room light sensor.
  • Photodetectors based on semiconductors i. Silicon photodiodes are known in the art. For example, they have a detection angle of up to 130 °. Such photodetectors require a housing with precise centering of the actual silicon crystal, for which appropriate holding means are necessary. What is essential here is optics in order to realize a suitable detection angle.
  • Organic photodiodes and their preparation are known from the prior art, for which reference is made, in particular, to the earlier German patent applications of the applicant with file references 10 2005 055 278 and 10 2005 038 123. Apart from that, such a construction is in principle also known from the general state of the art of organic semiconductors. It is essential in each case that a substrate is present, which in particular can be flexible, on which an anode as the first metal electrode, an organic semiconductor with a semiconductor junction and thereon a cathode as a further electrode are arranged. A voltage can be applied between the electrodes. For organic photodiodes is still essential that a protection of the component is present by means of an encapsulation.
  • the photoconductive organic layer can be formed from a so-called "bulk heterojunction" material, which is realized, for example, as a so-called blend of a hole-transporting polythiophene and an electron-transporting fullerene derivative.
  • a flexible substrate is denoted by 1.
  • six large-area detectors 2 X are applied, each having a structure described above.
  • the flexible substrate 1 with the detectors 2 X applied thereto is bent into a circle and, in particular, fitted in a funnel-shaped fitting into an existing housing, which is delimited by covers 3 and 4.
  • the housing thus forms a truncated cone-like sensor.
  • this sensor cone can be fastened to a room ceiling.
  • the inclination of the funnel-shaped housing indicates in each case the focus on certain areas of space.
  • a single large-area detector 12 is applied to a rigid substrate 11. For example, square surfaces are formed.
  • FIG. 3 Elements according to FIG. 3 can be combined to geometric space bodies.
  • four detectors 12i form the circumferential surfaces of a cube and a fifth detector 12i its base, which is illustrated with reference to FIG.
  • FIG. 2 or FIG. be varied very different way. It is common in each case that organic photodetectors, which can be produced areally, are used.
  • the sensors described can be completed by solar cells, so that self-powered sensors are formed.

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  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Light Receiving Elements (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)

Abstract

Il est connu d'utiliser des photodétecteurs à base de semi-conducteurs comme capteurs de luminosité ambiante. De tels photodétecteurs à monocristaux de silicium nécessitent, en particulier, un boîtier et une optique associée. L'invention est, en conséquence, caractérisée en ce que le capteur (6, 10) présente un nombre prédéterminé de photodiodes (2i, 12i) à base de matériaux semi-conducteurs organiques, et en ce que les photodiodes organiques (2i, 12i) sont réalisées, en grande surface, suivant une géométrie prédéterminée et peuvent être orientées dans différentes régions d'un espace.
PCT/EP2008/053751 2007-03-30 2008-03-28 Capteur de luminosité ambiante WO2008119766A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102007015471A DE102007015471B3 (de) 2007-03-30 2007-03-30 Umgebungslichtsensor
DE102007015471.4 2007-03-30

Publications (1)

Publication Number Publication Date
WO2008119766A1 true WO2008119766A1 (fr) 2008-10-09

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DE (1) DE102007015471B3 (fr)
WO (1) WO2008119766A1 (fr)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009024467A1 (fr) * 2007-08-17 2009-02-26 Siemens Aktiengesellschaft Capteur optique de position à base organique
CN102338660A (zh) * 2010-07-08 2012-02-01 赫拉胡克公司 用于检测环境条件的传感器装置
CN102569653A (zh) * 2011-12-26 2012-07-11 浙江大学 一种锥体结构的有机太阳能电池
DE102013109506A1 (de) * 2013-08-30 2015-03-05 CiS Forschungsinstitut für Mikrosensorik und Photovoltaik GmbH Richtungssensitiver Fotosensor zur Erfassung der Einfallsrichtung von Licht
DE102013219011A1 (de) * 2013-09-20 2015-03-26 Osram Gmbh Sensoreinheit zur Lichtsteuerung
DE102015201460A1 (de) * 2015-01-28 2016-07-28 Siemens Healthcare Gmbh Positionsbestimmung eines medizinischen Instruments

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102010011025B3 (de) * 2010-03-11 2011-07-28 Siemens Aktiengesellschaft, 80333 Sensoranordnung
DE102011077961A1 (de) * 2011-06-22 2012-12-27 Siemens Aktiengesellschaft Schwachlichtdetektion mit organischem fotosensitivem Bauteil
CN107076670A (zh) * 2014-09-19 2017-08-18 哈希公司 具有轴向照明和圆形的光电探测器的散射式浊度计

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3821743A1 (de) * 1988-06-28 1990-01-11 Bosch Gmbh Robert Sensor zur erfassung der einstrahlung
US20030188776A1 (en) * 2002-01-25 2003-10-09 Konarka Technologies, Inc. Photovoltaic powered multimedia greeting cards and smart cards
DE102004053958B3 (de) * 2004-11-09 2005-09-01 Behr Hella Thermocontrol Gmbh Vorrichtung zur Erfassung von elektromagnetischer Strahlung, insbesondere Sonnenlicht, zur Verwendung bei einem Fahrzeug
WO2007017475A1 (fr) * 2005-08-08 2007-02-15 Siemens Aktiengesellschaft Photodetecteur organique a sensibilite accrue et utilisation d'un polymere de triarylamine et de fluorene comme couche intermediaire dans un photodetecteur

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004026012A1 (fr) * 2002-09-05 2004-03-25 Siemens Aktiengesellschaft Boitier multifonction
DE102004036793A1 (de) * 2004-07-29 2006-03-23 Konarka Technologies, Inc., Lowell Nanoporöse Fullerenschichten und deren Verwendung in der organischen Photovoltaik
DE102005055278B4 (de) * 2005-11-17 2010-12-02 Siemens Ag Organischer pixelierter Flachdetektor mit erhöhter Empfindlichkeit

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3821743A1 (de) * 1988-06-28 1990-01-11 Bosch Gmbh Robert Sensor zur erfassung der einstrahlung
US20030188776A1 (en) * 2002-01-25 2003-10-09 Konarka Technologies, Inc. Photovoltaic powered multimedia greeting cards and smart cards
DE102004053958B3 (de) * 2004-11-09 2005-09-01 Behr Hella Thermocontrol Gmbh Vorrichtung zur Erfassung von elektromagnetischer Strahlung, insbesondere Sonnenlicht, zur Verwendung bei einem Fahrzeug
WO2007017475A1 (fr) * 2005-08-08 2007-02-15 Siemens Aktiengesellschaft Photodetecteur organique a sensibilite accrue et utilisation d'un polymere de triarylamine et de fluorene comme couche intermediaire dans un photodetecteur

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
RAUCH T ET AL: "Performance of bulk-heterojunction organic photodetectors", NANOTECHNOLOGY, 2004. 4TH IEEE CONFERENCE ON MUNICH, GERMANY 16-19 AUG. 2004, PISCATAWAY, NJ, USA,IEEE, 16 August 2004 (2004-08-16), pages 632 - 634, XP010767372, ISBN: 978-0-7803-8536-8 *

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009024467A1 (fr) * 2007-08-17 2009-02-26 Siemens Aktiengesellschaft Capteur optique de position à base organique
CN102338660A (zh) * 2010-07-08 2012-02-01 赫拉胡克公司 用于检测环境条件的传感器装置
CN102569653A (zh) * 2011-12-26 2012-07-11 浙江大学 一种锥体结构的有机太阳能电池
DE102013109506A1 (de) * 2013-08-30 2015-03-05 CiS Forschungsinstitut für Mikrosensorik und Photovoltaik GmbH Richtungssensitiver Fotosensor zur Erfassung der Einfallsrichtung von Licht
DE102013219011A1 (de) * 2013-09-20 2015-03-26 Osram Gmbh Sensoreinheit zur Lichtsteuerung
US10292240B2 (en) 2013-09-20 2019-05-14 Osram Gmbh Sensor unit for light control
DE102015201460A1 (de) * 2015-01-28 2016-07-28 Siemens Healthcare Gmbh Positionsbestimmung eines medizinischen Instruments
DE102015201460B4 (de) 2015-01-28 2023-05-17 Siemens Healthcare Gmbh Positionsbestimmung eines medizinischen Instruments

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