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WO2008108213A1 - Appareil de traitement au plasma, procédé de traitement au plasma et support de stockage - Google Patents

Appareil de traitement au plasma, procédé de traitement au plasma et support de stockage Download PDF

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Publication number
WO2008108213A1
WO2008108213A1 PCT/JP2008/053237 JP2008053237W WO2008108213A1 WO 2008108213 A1 WO2008108213 A1 WO 2008108213A1 JP 2008053237 W JP2008053237 W JP 2008053237W WO 2008108213 A1 WO2008108213 A1 WO 2008108213A1
Authority
WO
WIPO (PCT)
Prior art keywords
microwave
processing vessel
plasma processing
processing
plane antenna
Prior art date
Application number
PCT/JP2008/053237
Other languages
English (en)
Japanese (ja)
Inventor
Hiraku Ishikawa
Yasuhiro Tobe
Original Assignee
Tokyo Electron Limited
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Limited filed Critical Tokyo Electron Limited
Priority to US12/529,424 priority Critical patent/US8262844B2/en
Priority to CN2008800067841A priority patent/CN101622698B/zh
Priority to EP08711966A priority patent/EP2136392A1/fr
Priority to JP2009502520A priority patent/JP4927160B2/ja
Publication of WO2008108213A1 publication Critical patent/WO2008108213A1/fr

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

L'invention concerne un appareil de traitement au plasma qui comprend un récipient de traitement pour contenir une pièce à usiner, une section de génération de micro-ondes pour générer des micro-ondes, un guide d'ondes pour guider des micro-ondes générées à partir de la section de génération de micro-ondes vers le récipient de traitement, une antenne plane ayant une pluralité de trous de rayonnement de micro-ondes pour émettre les micro-ondes introduites par le guide d'ondes vers le récipient de traitement, une plaque diélectrique de transmission de micro-ondes constituant la paroi supérieure du récipient de traitement et transmettant les micro-ondes passées à travers les trous de rayonnement de micro-ondes de l'antenne plane, un mécanisme d'introduction de gaz de traitement pour introduire un gaz de traitement à l'intérieur du récipient de traitement, et une section de formation de champ magnétique disposée au-dessus de l'antenne plane et formant un champ magnétique dans le récipient de traitement, afin de commander les caractéristiques du plasma du gaz de traitement produit dans le récipient de traitement par les micro-ondes.
PCT/JP2008/053237 2007-03-08 2008-02-26 Appareil de traitement au plasma, procédé de traitement au plasma et support de stockage WO2008108213A1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
US12/529,424 US8262844B2 (en) 2007-03-08 2008-02-26 Plasma processing apparatus, plasma processing method and storage medium
CN2008800067841A CN101622698B (zh) 2007-03-08 2008-02-26 等离子体处理装置、等离子体处理方法
EP08711966A EP2136392A1 (fr) 2007-03-08 2008-02-26 Appareil de traitement au plasma, procédé de traitement au plasma et support de stockage
JP2009502520A JP4927160B2 (ja) 2007-03-08 2008-02-26 プラズマ処理装置、プラズマ処理方法、および記憶媒体

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007058537 2007-03-08
JP2007-058537 2007-03-08

Publications (1)

Publication Number Publication Date
WO2008108213A1 true WO2008108213A1 (fr) 2008-09-12

Family

ID=39738105

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/053237 WO2008108213A1 (fr) 2007-03-08 2008-02-26 Appareil de traitement au plasma, procédé de traitement au plasma et support de stockage

Country Status (7)

Country Link
US (1) US8262844B2 (fr)
EP (1) EP2136392A1 (fr)
JP (1) JP4927160B2 (fr)
KR (1) KR101098314B1 (fr)
CN (1) CN101622698B (fr)
TW (1) TW200901317A (fr)
WO (1) WO2008108213A1 (fr)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012199376A (ja) * 2011-03-22 2012-10-18 Tokyo Electron Ltd プラズマ処理装置
US8354464B2 (en) 2008-12-17 2013-01-15 Cheil Industries Inc. Mixtures of brominated diphenylethanes, method of preparing the same and resin composition using the same
US9659754B2 (en) 2012-11-06 2017-05-23 Tokyo Electron Limited Plasma processing apparatus and plasma processing method
JP2020038906A (ja) * 2018-09-04 2020-03-12 キオクシア株式会社 プラズマ処理装置および半導体装置の製造方法

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5214774B2 (ja) * 2010-11-19 2013-06-19 株式会社日立国際電気 基板処理装置及び半導体装置の製造方法
TWI465158B (zh) * 2011-01-12 2014-12-11 Ind Tech Res Inst 微波電漿激發裝置
CN103325961B (zh) * 2013-05-22 2016-05-18 上海和辉光电有限公司 Oled封装加热装置及工艺方法
US20150118416A1 (en) * 2013-10-31 2015-04-30 Semes Co., Ltd. Substrate treating apparatus and method
CN117794040A (zh) * 2016-03-03 2024-03-29 北京北方华创微电子装备有限公司 一种表面波等离子体发生装置及半导体工艺设备
JP6850636B2 (ja) * 2017-03-03 2021-03-31 東京エレクトロン株式会社 プラズマ処理装置
KR102190794B1 (ko) * 2018-07-02 2020-12-15 주식회사 기가레인 기계적으로 플라즈마 밀도를 제어하는 기판 처리 장치
CN109092227B (zh) * 2018-08-30 2021-06-29 长沙新材料产业研究院有限公司 一种mpcvd合成设备及控制方法
JP2023017411A (ja) * 2021-07-26 2023-02-07 日新電機株式会社 プラズマ処理装置

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06104184A (ja) * 1992-09-18 1994-04-15 Fujitsu Ltd プラズマ処理装置
JP2000294550A (ja) 1999-04-05 2000-10-20 Tokyo Electron Ltd 半導体製造方法及び半導体製造装置
JP2003203904A (ja) * 2002-01-04 2003-07-18 Canon Inc マイクロ波プラズマ処理装置及びプラズマ処理方法
JP2006237640A (ja) * 2006-05-08 2006-09-07 Tadahiro Omi 半導体製造方法
JP2007058537A (ja) 2005-08-24 2007-03-08 Ricoh Co Ltd デジタル機器

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06188222A (ja) 1992-12-22 1994-07-08 Canon Inc マイクロ波プラズマエッチング装置
JPH09172000A (ja) 1995-12-20 1997-06-30 Hitachi Ltd 半導体処理装置
KR100745495B1 (ko) * 1999-03-10 2007-08-03 동경 엘렉트론 주식회사 반도체 제조방법 및 반도체 제조장치
JP3709552B2 (ja) 1999-09-03 2005-10-26 株式会社日立製作所 プラズマ処理装置及びプラズマ処理方法
TWI239794B (en) * 2002-01-30 2005-09-11 Alps Electric Co Ltd Plasma processing apparatus and method
JP3870909B2 (ja) 2003-01-31 2007-01-24 株式会社島津製作所 プラズマ処理装置
CN100492591C (zh) * 2003-09-04 2009-05-27 东京毅力科创株式会社 等离子处理装置
JP4718189B2 (ja) 2005-01-07 2011-07-06 東京エレクトロン株式会社 プラズマ処理方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06104184A (ja) * 1992-09-18 1994-04-15 Fujitsu Ltd プラズマ処理装置
JP2000294550A (ja) 1999-04-05 2000-10-20 Tokyo Electron Ltd 半導体製造方法及び半導体製造装置
JP2003203904A (ja) * 2002-01-04 2003-07-18 Canon Inc マイクロ波プラズマ処理装置及びプラズマ処理方法
JP2007058537A (ja) 2005-08-24 2007-03-08 Ricoh Co Ltd デジタル機器
JP2006237640A (ja) * 2006-05-08 2006-09-07 Tadahiro Omi 半導体製造方法

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8354464B2 (en) 2008-12-17 2013-01-15 Cheil Industries Inc. Mixtures of brominated diphenylethanes, method of preparing the same and resin composition using the same
JP2012199376A (ja) * 2011-03-22 2012-10-18 Tokyo Electron Ltd プラズマ処理装置
US9659754B2 (en) 2012-11-06 2017-05-23 Tokyo Electron Limited Plasma processing apparatus and plasma processing method
JP2020038906A (ja) * 2018-09-04 2020-03-12 キオクシア株式会社 プラズマ処理装置および半導体装置の製造方法
JP7091196B2 (ja) 2018-09-04 2022-06-27 キオクシア株式会社 プラズマ処理装置および半導体装置の製造方法

Also Published As

Publication number Publication date
CN101622698A (zh) 2010-01-06
US20100089871A1 (en) 2010-04-15
KR101098314B1 (ko) 2011-12-26
EP2136392A1 (fr) 2009-12-23
JP4927160B2 (ja) 2012-05-09
CN101622698B (zh) 2012-08-29
US8262844B2 (en) 2012-09-11
JPWO2008108213A1 (ja) 2010-06-10
TWI367529B (fr) 2012-07-01
TW200901317A (en) 2009-01-01
KR20090117828A (ko) 2009-11-12

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