+

WO2008102499A1 - Magnetic substance device, and magnetic random access memory - Google Patents

Magnetic substance device, and magnetic random access memory Download PDF

Info

Publication number
WO2008102499A1
WO2008102499A1 PCT/JP2007/073355 JP2007073355W WO2008102499A1 WO 2008102499 A1 WO2008102499 A1 WO 2008102499A1 JP 2007073355 W JP2007073355 W JP 2007073355W WO 2008102499 A1 WO2008102499 A1 WO 2008102499A1
Authority
WO
WIPO (PCT)
Prior art keywords
layer
magnetic
magnetic substance
random access
access memory
Prior art date
Application number
PCT/JP2007/073355
Other languages
French (fr)
Japanese (ja)
Inventor
Yuukou Katou
Original Assignee
Nec Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nec Corporation filed Critical Nec Corporation
Priority to JP2009500065A priority Critical patent/JP5387908B2/en
Publication of WO2008102499A1 publication Critical patent/WO2008102499A1/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
  • Semiconductor Memories (AREA)
  • Thin Magnetic Films (AREA)

Abstract

Provided is a magnetic substance device comprising an antiferromagnetic substance layer (1) and a pin layer (2) formed over the layer (1). The pin layer (2) has a laminated structure, in which magnetic substance layers (3) and at least one non-magnetic layer (4) are alternately laminated. The two adjoining magnetic substance layers (3) are ferromagnetically or antiferromagnetically coupled to each other through the non-magnetic layer (4). The total of the magnetizations of the magnetic substance layers (3) contained in the pin layer (2) is zero. Moreover, the magnetic substance layers (3) include a first magnetic substance layer (3-1) to contact the antiferromagnetic layer (1), and a second magnetic substance layer (3-2) positioned at the longest distance from the antiferromagnetic substance layer (1). The second magnetic substance layer (3-2) has a thickness (T2) smaller than the thickness (T1) of the first magnetic substance layer (3-1).
PCT/JP2007/073355 2007-02-23 2007-12-04 Magnetic substance device, and magnetic random access memory WO2008102499A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009500065A JP5387908B2 (en) 2007-02-23 2007-12-04 Magnetic device and magnetic random access memory

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-043641 2007-02-23
JP2007043641 2007-02-23

Publications (1)

Publication Number Publication Date
WO2008102499A1 true WO2008102499A1 (en) 2008-08-28

Family

ID=39709781

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2007/073355 WO2008102499A1 (en) 2007-02-23 2007-12-04 Magnetic substance device, and magnetic random access memory

Country Status (2)

Country Link
JP (1) JP5387908B2 (en)
WO (1) WO2008102499A1 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012099816A (en) * 2010-11-01 2012-05-24 Seagate Technology Llc Magnetic tunnel junction cell, device and memory array
CN112490355A (en) * 2019-09-12 2021-03-12 铠侠股份有限公司 Magnetic storage device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004327947A (en) * 2003-04-25 2004-11-18 Korea Univ Foundation Magneto-resistive element having small and stable bias magnetic field regardless of size variation of element
JP2006032464A (en) * 2004-07-13 2006-02-02 Toshiba Corp Magnetic random access memory

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004327947A (en) * 2003-04-25 2004-11-18 Korea Univ Foundation Magneto-resistive element having small and stable bias magnetic field regardless of size variation of element
JP2006032464A (en) * 2004-07-13 2006-02-02 Toshiba Corp Magnetic random access memory

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
SUN J.J. ET AL.: "Low resistance and high thermal stability of spin-dependent tunnel junctions with synthetic antiferromagnetic CoFe/Ru/CoF epinned layers", APPLIED PHYSICS LETTERS, vol. 76, no. 17, 24 April 2000 (2000-04-24), pages 2424 - 2426, XP000954265 *

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012099816A (en) * 2010-11-01 2012-05-24 Seagate Technology Llc Magnetic tunnel junction cell, device and memory array
CN112490355A (en) * 2019-09-12 2021-03-12 铠侠股份有限公司 Magnetic storage device
CN112490355B (en) * 2019-09-12 2023-10-31 铠侠股份有限公司 Magnetic memory device

Also Published As

Publication number Publication date
JPWO2008102499A1 (en) 2010-05-27
JP5387908B2 (en) 2014-01-15

Similar Documents

Publication Publication Date Title
WO2009001706A1 (en) Magnetoresistive element and magnetic random access memory
WO2008099626A1 (en) Magnetoresistance effect element and magnetic random access memory
WO2004063760A3 (en) Magnetostatically coupled magnetic elements utilizing spin transfer and an mram device using the magnetic element
WO2007124203A3 (en) Methods and apparatus for a synthetic anti-ferromagnet structure with reduced temperature dependence
WO2009054062A1 (en) Magnetic tunnel junction element with megnetization free layer having sandwich structure
WO2009060749A1 (en) Magnetoresistive element and magnetic random access memory
JP2015002352A5 (en)
WO2009054180A1 (en) Magnetoresistive effect element and magnetic random access memory
WO2012009524A3 (en) Magnetic storage element comprising a functional layer in the pinned layers and manufacturing method thereof
WO2007075889A3 (en) Current-switched spin-transfer magnetic devices with reduced spin-transfer switching current density
TW200626922A (en) Magnetic sensor using giant magnetoresistive elements and method for manufacturing the same
WO2008060762A3 (en) Magnetic tunnel junction structure and method
SG115622A1 (en) Magnetoresistive device with exchange-coupled structure having half-metallic ferromagnetic heusler alloy in the pinned layer
GB2505578A (en) Magnetic stacks with perpendicular magnetic anisotropy for spin momentum transfer magnetoresistive random access memory
WO2005112034A3 (en) Spin barrier enhanced magnetoresistance effect element and magnetic memory using the same
WO2007035786A3 (en) Magnetic devices having stabilized free ferromagnetic layer or multilayered free ferromagnetic layer
WO2007120697A3 (en) Methods and apparatus for integrated circuit having multiple dies with at least one on chip capacitor
CN102916125A (en) Magnetic memory device and fabrication method thereof
WO2008036073A3 (en) High temperature superconducting wires and coils
JP2017505538A5 (en)
WO2005079528A3 (en) Spin transfer magnetic element having low saturation magnetization free layers
WO2004064073A3 (en) Spin-transfer multilayer stack containing magnetic layers with resettable magnetization
WO2012036734A3 (en) Spin torque transfer memory cell structures and methods
WO2008050045A3 (en) Magnetic device with perpendicular magnetisation and comprising an interaction-compensating intermediate layer
WO2006063007A3 (en) Method and system for providing a highly textured magnetoresistance element and magnetic memory

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 07850005

Country of ref document: EP

Kind code of ref document: A1

ENP Entry into the national phase

Ref document number: 2009500065

Country of ref document: JP

Kind code of ref document: A

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 07850005

Country of ref document: EP

Kind code of ref document: A1

点击 这是indexloc提供的php浏览器服务，不要输入任何密码和下载