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WO2008152845A1 - 乱数発生器 - Google Patents

乱数発生器 Download PDF

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Publication number
WO2008152845A1
WO2008152845A1 PCT/JP2008/055368 JP2008055368W WO2008152845A1 WO 2008152845 A1 WO2008152845 A1 WO 2008152845A1 JP 2008055368 W JP2008055368 W JP 2008055368W WO 2008152845 A1 WO2008152845 A1 WO 2008152845A1
Authority
WO
WIPO (PCT)
Prior art keywords
random number
magnetizing
layer
number generator
unfixed
Prior art date
Application number
PCT/JP2008/055368
Other languages
English (en)
French (fr)
Inventor
Akio Fukushima
Hitoshi Kubota
Kay Yakushiji
Shinji Yuasa
Koji Ando
Original Assignee
National Institute Of Advanced Industrial Science And Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by National Institute Of Advanced Industrial Science And Technology filed Critical National Institute Of Advanced Industrial Science And Technology
Priority to EP08722684A priority Critical patent/EP2163984B1/en
Priority to US12/452,012 priority patent/US8521795B2/en
Publication of WO2008152845A1 publication Critical patent/WO2008152845A1/ja

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Classifications

    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F7/00—Methods or arrangements for processing data by operating upon the order or content of the data handled
    • G06F7/58—Random or pseudo-random number generators
    • G06F7/588—Random number generators, i.e. based on natural stochastic processes

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Computational Mathematics (AREA)
  • Mathematical Analysis (AREA)
  • Mathematical Optimization (AREA)
  • Pure & Applied Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • Hall/Mr Elements (AREA)
  • Measuring Magnetic Variables (AREA)

Abstract

　乱数発生器を、乱数発生速度を早くすると供に、回路構成をコンパクト且つ容易に構成する。 　乱数発生器は、磁化自由層、中間層、磁化固定層の３層からなり、磁化自由層と磁化固定層の磁化の配列に応じて少なくとも二値以上の抵抗値を有する磁気抵抗素子を備え、該磁気抵抗素子にその磁化自由層の反転確率が０から１の間の任意の値になる磁化電流を流し、前記磁気抵抗素子の抵抗値を乱数として取り出す。
PCT/JP2008/055368 2007-06-12 2008-03-24 乱数発生器 WO2008152845A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
EP08722684A EP2163984B1 (en) 2007-06-12 2008-03-24 Random number generating device
US12/452,012 US8521795B2 (en) 2007-06-12 2008-03-24 Random number generating device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007155008A JP4625936B2 (ja) 2007-06-12 2007-06-12 乱数発生器
JP2007-155008 2007-06-12

Publications (1)

Publication Number Publication Date
WO2008152845A1 true WO2008152845A1 (ja) 2008-12-18

Family

ID=40129458

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/055368 WO2008152845A1 (ja) 2007-06-12 2008-03-24 乱数発生器

Country Status (4)

Country Link
US (1) US8521795B2 (ja)
EP (1) EP2163984B1 (ja)
JP (1) JP4625936B2 (ja)
WO (1) WO2008152845A1 (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010090328A1 (ja) * 2009-02-09 2010-08-12 株式会社 東芝 乱数発生器
JP2014531669A (ja) * 2011-09-20 2014-11-27 クアルコム，インコーポレイテッド 乱数生成器のための磁気抵抗素子を伴うエントロピー源

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JP4625936B2 (ja) * 2007-06-12 2011-02-02 独立行政法人産業技術総合研究所 乱数発生器
JP2011113136A (ja) 2009-11-24 2011-06-09 Sony Corp 乱数発生装置、乱数発生方法及びセキュリティチップ
JP5725735B2 (ja) * 2010-06-04 2015-05-27 株式会社日立製作所 磁気抵抗効果素子及び磁気メモリ
KR101348503B1 (ko) * 2012-06-29 2014-01-07 리켄 난수 발생기 및 이의 제조방법
US9466030B2 (en) 2012-08-30 2016-10-11 International Business Machines Corporation Implementing stochastic networks using magnetic tunnel junctions
US9110746B2 (en) * 2012-09-04 2015-08-18 Qualcomm Incorporated Magnetic tunnel junction based random number generator
US9164729B2 (en) 2013-02-05 2015-10-20 Qualcomm Incorporated Method and apparatus for generating random numbers using a physical entropy source
WO2014192153A1 (ja) * 2013-05-31 2014-12-04 株式会社日立製作所 半導体装置
WO2014203466A1 (ja) 2013-06-18 2014-12-24 パナソニックＩｐマネジメント株式会社 乱数発生装置
US9459835B2 (en) 2014-01-15 2016-10-04 HGST Netherlands B.V. Random number generator by superparamagnetism
US9916884B2 (en) * 2014-03-07 2018-03-13 Intel Corporation Physically unclonable function circuit using resistive memory device
US9442695B2 (en) * 2014-05-02 2016-09-13 International Business Machines Corporation Random bit generator based on nanomaterials
RU2677415C2 (ru) 2014-05-09 2019-01-16 Квантум Намберс Корп. Способ генерации случайных чисел и соответствующий генератор случайных чисел
US9846569B1 (en) 2014-11-17 2017-12-19 Seagate Technology Llc Random values based on a random components of noise
EP3062215B1 (en) * 2015-02-24 2018-04-04 Crocus Technology S.A. Mram-based programmable magnetic device for generating random numbers
US9813049B2 (en) * 2015-08-12 2017-11-07 Qualcomm Incorporated Comparator including a magnetic tunnel junction (MTJ) device and a transistor
DE102016207451A1 (de) * 2016-04-29 2017-11-02 Siemens Aktiengesellschaft Verfahren und Vorrichtung zum Erzeugen von Zufallsbits
US10340901B2 (en) 2017-03-01 2019-07-02 Tdk Corporation Random number generator, random number generation device, neuromorphic computer, and quantum computer
US10168996B1 (en) 2018-01-15 2019-01-01 Quantum Numbers Corp. Method and system for generating a random bit sample
US10719298B1 (en) * 2019-02-25 2020-07-21 Western Digital Technologies, Inc. System for generating random noise with a magnetic device
WO2021002115A1 (ja) * 2019-07-03 2021-01-07 国立大学法人東北大学 乱数発生ユニット及びコンピューティングシステム
US11521664B2 (en) * 2019-08-30 2022-12-06 Taiwan Semiconductor Manufacturing Company, Ltd. Memory device with tunable probabilistic state
DE102020119273A1 (de) 2019-08-30 2021-03-04 Taiwan Semiconductor Manufacturing Co. Ltd. Speichervorrichtung mit abstimmbarem probabilistischem Zustand
US20220398068A1 (en) * 2021-06-09 2022-12-15 International Business Machines Corporation Magnetic-tunnel-junction-based random number generator
JP2023050897A (ja) * 2021-09-30 2023-04-11 ソニーセミコンダクタソリューションズ株式会社 磁気検出装置
CN118974694A (zh) 2022-04-13 2024-11-15 三菱电机株式会社 量子随机数生成装置

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JP2000284944A (ja) * 1999-03-30 2000-10-13 Ntt Data Corp 乱数発生方法及び乱数発生装置
JP2003015865A (ja) * 2001-06-27 2003-01-17 Le Tekku:Kk 乱数発生方法
JP2005085821A (ja) * 2003-09-04 2005-03-31 Toshiba Corp 磁気抵抗効果素子及び磁気メモリ

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FR2817999B1 (fr) * 2000-12-07 2003-01-10 Commissariat Energie Atomique Dispositif magnetique a polarisation de spin et a empilement(s) tri-couche(s) et memoire utilisant ce dispositif
JP2003108364A (ja) 2001-09-26 2003-04-11 Toshiba Corp 乱数発生回路
JP3641255B2 (ja) 2002-06-24 2005-04-20 株式会社東芝 乱数生成装置
JP4118754B2 (ja) 2003-06-27 2008-07-16 日本電信電話株式会社 乱数発生回路
JP4692807B2 (ja) * 2004-12-21 2011-06-01 ソニー株式会社 接触式データ通信装置、送受信装置、および送受信方法
JP2008003438A (ja) * 2006-06-26 2008-01-10 Sony Corp 乱数生成装置、乱数生成制御方法、メモリアクセス制御装置、および、通信装置
JP4625936B2 (ja) * 2007-06-12 2011-02-02 独立行政法人産業技術総合研究所 乱数発生器
US7916524B2 (en) * 2007-06-26 2011-03-29 Qimonda Ag Program method with locally optimized write parameters
US20090249081A1 (en) * 2008-03-31 2009-10-01 Kabushiki Kaisha Toshiba-1 Shibaura 1-Chomominatoku Storage device encryption and method

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JP2000284944A (ja) * 1999-03-30 2000-10-13 Ntt Data Corp 乱数発生方法及び乱数発生装置
JP2003015865A (ja) * 2001-06-27 2003-01-17 Le Tekku:Kk 乱数発生方法
JP2005085821A (ja) * 2003-09-04 2005-03-31 Toshiba Corp 磁気抵抗効果素子及び磁気メモリ

Non-Patent Citations (2)

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FUKUSHIMA A. ET AL.: "Spin Chunyu Jika Hanten o Mochiita Ransu Hasseiki", 70TH (HEISEI 20 NEN) ZENKOKU TAIKAI KOEN RONBUNSHU (3), 13 March 2008 (2008-03-13), pages 3-359 - 3-360 *
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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010090328A1 (ja) * 2009-02-09 2010-08-12 株式会社 東芝 乱数発生器
JP2010182258A (ja) * 2009-02-09 2010-08-19 Toshiba Corp 乱数発生器および乱数発生方法
US8374021B2 (en) 2009-02-09 2013-02-12 Kabushiki Kaisha Toshiba Random number generator
JP2014531669A (ja) * 2011-09-20 2014-11-27 クアルコム，インコーポレイテッド 乱数生成器のための磁気抵抗素子を伴うエントロピー源
US9189201B2 (en) 2011-09-20 2015-11-17 Qualcomm Incorporated Entropy source with magneto-resistive element for random number generator

Also Published As

Publication number Publication date
EP2163984A4 (en) 2011-09-07
US20100131578A1 (en) 2010-05-27
EP2163984B1 (en) 2012-10-17
EP2163984A1 (en) 2010-03-17
JP4625936B2 (ja) 2011-02-02
US8521795B2 (en) 2013-08-27
JP2008310403A (ja) 2008-12-25

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