+

WO2008152281A3 - Transistor a effet de champ a nanotubes de carbone - Google Patents

Transistor a effet de champ a nanotubes de carbone Download PDF

Info

Publication number
WO2008152281A3
WO2008152281A3 PCT/FR2008/050894 FR2008050894W WO2008152281A3 WO 2008152281 A3 WO2008152281 A3 WO 2008152281A3 FR 2008050894 W FR2008050894 W FR 2008050894W WO 2008152281 A3 WO2008152281 A3 WO 2008152281A3
Authority
WO
WIPO (PCT)
Prior art keywords
effect transistor
nanotubes
carbon nanotubes
field effect
area
Prior art date
Application number
PCT/FR2008/050894
Other languages
English (en)
Other versions
WO2008152281A2 (fr
Inventor
Jean-Philippe Bourgoin
Marcelo Goffman
Vincent Derycke
Nicolas Chimot
Original Assignee
Commissariat Energie Atomique
Jean-Philippe Bourgoin
Marcelo Goffman
Vincent Derycke
Nicolas Chimot
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat Energie Atomique, Jean-Philippe Bourgoin, Marcelo Goffman, Vincent Derycke, Nicolas Chimot filed Critical Commissariat Energie Atomique
Priority to EP08805838A priority Critical patent/EP2150995A2/fr
Publication of WO2008152281A2 publication Critical patent/WO2008152281A2/fr
Publication of WO2008152281A3 publication Critical patent/WO2008152281A3/fr

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
    • H10K85/221—Carbon nanotubes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H10K10/472—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising only inorganic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)
  • Carbon And Carbon Compounds (AREA)

Abstract

La présente invention concerne un transistor à effet de champ flexible à base de nanotubes et son procédé de fabrication. Le transistor (1 ) à effet de champ selon l'invention comporte au moins deux électrodes (3, 4, 5) de contact respectivement de drain et de source, une zone de conduction électrique connectée aux électrodes de contact, ladite zone comportant une pluralité de nanotubes de carbone mono-paroi (13) sensiblement alignés, une électrode de grille (6, 7) pour le contrôle du courant électrique circulant dans ladite zone et un substrat flexible (2) sur lequel sont déposées les électrodes de contact et de grille (3, 4, 5, 6, 7). La densité de nanotubes dans la zone de conduction est strictement supérieure à 10 nanotubes par micron.
PCT/FR2008/050894 2007-05-31 2008-05-23 Transistor a effet de champ a nanotubes de carbone WO2008152281A2 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
EP08805838A EP2150995A2 (fr) 2007-05-31 2008-05-23 Transistor a effet de champ a nanotubes de carbone

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0755391 2007-05-31
FR0755391A FR2916902B1 (fr) 2007-05-31 2007-05-31 Transistor a effet de champ a nanotubes de carbone

Publications (2)

Publication Number Publication Date
WO2008152281A2 WO2008152281A2 (fr) 2008-12-18
WO2008152281A3 true WO2008152281A3 (fr) 2009-02-19

Family

ID=38896175

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/FR2008/050894 WO2008152281A2 (fr) 2007-05-31 2008-05-23 Transistor a effet de champ a nanotubes de carbone

Country Status (4)

Country Link
US (1) US9502659B2 (fr)
EP (1) EP2150995A2 (fr)
FR (1) FR2916902B1 (fr)
WO (1) WO2008152281A2 (fr)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005017967A2 (fr) * 2003-08-13 2005-02-24 Nantero, Inc. Structure dispositif a nanotube et son procede de production
US8679630B2 (en) * 2006-05-17 2014-03-25 Purdue Research Foundation Vertical carbon nanotube device in nanoporous templates
US8362760B2 (en) * 2008-02-19 2013-01-29 West Virginia University Research Corporation, Wvu Office Of Technology Transfer Stimulus responsive nanoparticles
US8715981B2 (en) * 2009-01-27 2014-05-06 Purdue Research Foundation Electrochemical biosensor
US8872154B2 (en) * 2009-04-06 2014-10-28 Purdue Research Foundation Field effect transistor fabrication from carbon nanotubes
US8445320B2 (en) * 2010-05-20 2013-05-21 International Business Machines Corporation Graphene channel-based devices and methods for fabrication thereof
FR2961320B1 (fr) * 2010-06-15 2013-04-26 Univ Paris Sud Composant electro-optique a nanotubes, circuit integre hybride optronique ou a lien optique integrant ce composant, et procede de fabrication.
US8288759B2 (en) * 2010-08-04 2012-10-16 Zhihong Chen Vertical stacking of carbon nanotube arrays for current enhancement and control
WO2012125727A1 (fr) * 2011-03-14 2012-09-20 Yale University Étalonnage de capteurs de nanostructure
US8557643B2 (en) * 2011-10-03 2013-10-15 International Business Machines Corporation Transistor device with reduced gate resistance
US8629010B2 (en) 2011-10-21 2014-01-14 International Business Machines Corporation Carbon nanotube transistor employing embedded electrodes
US8859439B1 (en) 2013-03-28 2014-10-14 International Business Machines Corporation Solution-assisted carbon nanotube placement with graphene electrodes
US9368723B2 (en) 2014-02-11 2016-06-14 Wisconsin Alumni Research Foundation Dose-controlled, floating evaporative assembly of aligned carbon nanotubes for use in high performance field effect transistors
US9425405B1 (en) 2015-02-11 2016-08-23 Wisconsin Alumni Research Foundation Continuous, floating evaporative assembly of aligned carbon nanotubes
US10431453B2 (en) * 2016-11-28 2019-10-01 International Business Machines Corporation Electric field assisted placement of nanomaterials through dielectric engineering
US10873026B2 (en) 2017-03-10 2020-12-22 Wisconsin Alumni Research Foundation Alignment of carbon nanotubes in confined channels
US10833284B1 (en) * 2019-06-04 2020-11-10 Carbonics Inc. Electrical devices having radiofrequency field effect transistors and the manufacture thereof
US10998424B2 (en) 2019-09-16 2021-05-04 International Business Machines Corporation Vertical metal-air transistor
CN114420695B (zh) * 2022-03-30 2022-07-15 北京元芯碳基集成电路研究院 一种碳纳米管熔丝器件及其制备方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040023514A1 (en) * 2002-08-01 2004-02-05 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing carbon nonotube semiconductor device
WO2006075968A1 (fr) * 2005-01-17 2006-07-20 Shi-Li Zhang Separation de nanotubes metalliques et de nanotubes de carbone semi-conducteurs, et cnfet produits a partir de ceux-ci

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6392271B1 (en) * 1999-06-28 2002-05-21 Intel Corporation Structure and process flow for fabrication of dual gate floating body integrated MOS transistors
CN100565783C (zh) * 2000-08-22 2009-12-02 哈佛学院董事会 包括至少四条半导体纳米线的电器件

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040023514A1 (en) * 2002-08-01 2004-02-05 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing carbon nonotube semiconductor device
WO2006075968A1 (fr) * 2005-01-17 2006-07-20 Shi-Li Zhang Separation de nanotubes metalliques et de nanotubes de carbone semi-conducteurs, et cnfet produits a partir de ceux-ci

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
AUVRAY S ET AL: "CHEMICAL OPTIMIZATION OF SELF-ASSEMBLED CARBON NANOTUBE TRANSISTORS", NANO LETTERS, ACS, WASHINGTON, DC, US, vol. 5, no. 3, March 2005 (2005-03-01), pages 451 - 455, XP008055328, ISSN: 1530-6984 *
J. BORGHETTI, V. DERYCKE, S. LENFANT, P. CHENEVIER, A. FILORAMO, M. GOFFMAN, D. VUILLAUME, J.-P. BOURGOIN: "Optoelectronic Switch and Memory Devices Based on Polymer-Functionalized Carbon Nanotube Transistors", ADVANCED MATERIALS, no. 18, 2006, pages 2535 - 2540, XP002464501 *
NAGAHARA LARRY A ET AL: "Directed placement of suspended carbon nanotubes for nanometer-scale assembly", APPLIED PHYSICS LETTERS, AIP, AMERICAN INSTITUTE OF PHYSICS, MELVILLE, NY, US, vol. 80, no. 20, 20 May 2002 (2002-05-20), pages 3826 - 3828, XP012030983, ISSN: 0003-6951 *
S. J. KANG, C. KOCABAS, T OZEL, M. SHIM, N. PIMPARKAR, M. A. ALAM, S. V. ROTKIN, J. A. ROGERS: "High-performance electronics using dense, perfectly aligned arrays of single-walled carbon nanotubes", NATURE NANOTECHNOLOGY, vol. 2, 25 March 2007 (2007-03-25), pages 230 - 236, XP002464500 *

Also Published As

Publication number Publication date
US9502659B2 (en) 2016-11-22
EP2150995A2 (fr) 2010-02-10
WO2008152281A2 (fr) 2008-12-18
FR2916902A1 (fr) 2008-12-05
FR2916902B1 (fr) 2009-07-17
US20080296563A1 (en) 2008-12-04

Similar Documents

Publication Publication Date Title
WO2008152281A3 (fr) Transistor a effet de champ a nanotubes de carbone
WO2005114747A3 (fr) Transistors a effet de champ a large bande interdite pourvus de plaques de champ connectees a la source
GB2510058A (en) Graphene or carbon nanotube devices with localized bottom gates and gate dielectric
WO2002054505A3 (fr) Systeme et procede de fragmentation par induction electrique de nanostructures
JP2010157636A5 (fr)
WO2008054411A8 (fr) Assemblage dirigé de nanotubes de carbone, et nanoparticules utilisant des nanogabarits avec des nanotranchées
JP2010532095A5 (fr)
WO2009154813A3 (fr) Procédé et appareil permettant de former une mémoire à double porte
WO2008091273A3 (fr) Transistor à effet de champ à nanotube de carbone
WO2009038606A3 (fr) Transistors à nanofils transparents et procédés de fabrication
WO2009041254A1 (fr) Transistor en couches minces organiques
TW200802888A (en) Thin film transistor and manufacturing method thereof
SG10201406869QA (en) Semiconductor device
JP2010278436A5 (fr)
JP2008091680A5 (fr)
DE602006017834D1 (de) Fet-transistornetzwerk auf basis von halbleitenden nanoröhrchen oder nanodrähten und entsprechende e
WO2008008648A3 (fr) Fets vertical à canal court
DE602006015937D1 (de) Vorrichtung zur elektrischen Feldsteuerung
GB0817058D0 (en) Biosensor using nanoscale material as transistor channel and method of fabricating the same
WO2009060934A1 (fr) Dispositif à semi-conducteur et son procédé de fabrication
WO2008099528A1 (fr) Dispositif d'affichage et procédé de fabrication du dispositif d'affichage
WO2010042344A3 (fr) Dispositifs spintroniques organiques et procédés de fabrication desdits dispositifs
GB2494012A (en) Epitaxial source/drain contacts self-aligned to gates for deposited fet channels
EP2555247A3 (fr) Transistor à film mince comprenant une couche de nanoconducteurs
TW200625464A (en) Electric device with vertical component

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 08805838

Country of ref document: EP

Kind code of ref document: A2

WWE Wipo information: entry into national phase

Ref document number: 2008805838

Country of ref document: EP

NENP Non-entry into the national phase

Ref country code: DE

点击 这是indexloc提供的php浏览器服务，不要输入任何密码和下载