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WO2008148978A3 - Substrat transparent muni d'une couche electrode perfectionnee - Google Patents

Substrat transparent muni d'une couche electrode perfectionnee Download PDF

Info

Publication number
WO2008148978A3
WO2008148978A3 PCT/FR2008/050768 FR2008050768W WO2008148978A3 WO 2008148978 A3 WO2008148978 A3 WO 2008148978A3 FR 2008050768 W FR2008050768 W FR 2008050768W WO 2008148978 A3 WO2008148978 A3 WO 2008148978A3
Authority
WO
WIPO (PCT)
Prior art keywords
electrode layer
transparent substrate
layer
advanced electrode
substrate
Prior art date
Application number
PCT/FR2008/050768
Other languages
English (en)
Other versions
WO2008148978A2 (fr
Inventor
Guillaume Counil
Michele Schiavoni
Fabrice Abbott
Original Assignee
Saint Gobain
Guillaume Counil
Michele Schiavoni
Fabrice Abbott
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Saint Gobain, Guillaume Counil, Michele Schiavoni, Fabrice Abbott filed Critical Saint Gobain
Priority to EP08805722A priority Critical patent/EP2153471A2/fr
Priority to JP2010504812A priority patent/JP2010526430A/ja
Priority to BRPI0810891-9A2A priority patent/BRPI0810891A2/pt
Priority to CN200880014796A priority patent/CN101681937A/zh
Priority to US12/598,042 priority patent/US20100116332A1/en
Priority to MX2009011912A priority patent/MX2009011912A/es
Publication of WO2008148978A2 publication Critical patent/WO2008148978A2/fr
Publication of WO2008148978A3 publication Critical patent/WO2008148978A3/fr

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H10F77/707—Surface textures, e.g. pyramid structures of the substrates or of layers on substrates, e.g. textured ITO layer on a glass substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H10F77/703—Surface textures, e.g. pyramid structures of the semiconductor bodies, e.g. textured active layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24479—Structurally defined web or sheet [e.g., overall dimension, etc.] including variation in thickness
    • Y10T428/24521—Structurally defined web or sheet [e.g., overall dimension, etc.] including variation in thickness with component conforming to contour of nonplanar surface
    • Y10T428/24529—Structurally defined web or sheet [e.g., overall dimension, etc.] including variation in thickness with component conforming to contour of nonplanar surface and conforming component on an opposite nonplanar surface
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24479—Structurally defined web or sheet [e.g., overall dimension, etc.] including variation in thickness
    • Y10T428/24521—Structurally defined web or sheet [e.g., overall dimension, etc.] including variation in thickness with component conforming to contour of nonplanar surface
    • Y10T428/24537—Parallel ribs and/or grooves
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24479—Structurally defined web or sheet [e.g., overall dimension, etc.] including variation in thickness
    • Y10T428/24521—Structurally defined web or sheet [e.g., overall dimension, etc.] including variation in thickness with component conforming to contour of nonplanar surface
    • Y10T428/24545—Containing metal or metal compound

Landscapes

  • Photovoltaic Devices (AREA)
  • Laminated Bodies (AREA)
  • Non-Insulated Conductors (AREA)

Abstract

Substrat à fonction verrière (1) associé à une électrode texturée comprenant au moins une couche transparente conductrice (3) à base d'oxyde (s) métallique (s), ladite couche étant recouverte par au moins une couche fonctionnelle (4) d'un élément capable de collecter de la lumière caractérisé en ce que le substrat (1) est recouvert par une couche d'interface (2) lprésentant une partie texturée comportant une répétition de motifs périodiques ou non périodiques en relief.
PCT/FR2008/050768 2007-05-04 2008-04-28 Substrat transparent muni d'une couche electrode perfectionnee WO2008148978A2 (fr)

Priority Applications (6)

Application Number Priority Date Filing Date Title
EP08805722A EP2153471A2 (fr) 2007-05-04 2008-04-28 Substrat transparent muni d'une couche electrode perfectionnee
JP2010504812A JP2010526430A (ja) 2007-05-04 2008-04-28 改良型電極層を備えた透明基材
BRPI0810891-9A2A BRPI0810891A2 (pt) 2007-05-04 2008-04-28 Substrato de função vítrea associado a um eletrodo texturado, processo de elaboração de um substrato, utilização de um substrato e célula solar
CN200880014796A CN101681937A (zh) 2007-05-04 2008-04-28 提供有改进的电极层的透明基底
US12/598,042 US20100116332A1 (en) 2007-05-04 2008-04-28 Transparent substrate provided with an improved electrode layer
MX2009011912A MX2009011912A (es) 2007-05-04 2008-04-28 Sustrato transparente provisto con una capa mejorada de electrodo.

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0754875A FR2915834B1 (fr) 2007-05-04 2007-05-04 Substrat transparent muni d'une couche electrode perfectionnee
FR0754875 2007-05-04

Publications (2)

Publication Number Publication Date
WO2008148978A2 WO2008148978A2 (fr) 2008-12-11
WO2008148978A3 true WO2008148978A3 (fr) 2009-02-19

Family

ID=39281154

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/FR2008/050768 WO2008148978A2 (fr) 2007-05-04 2008-04-28 Substrat transparent muni d'une couche electrode perfectionnee

Country Status (9)

Country Link
US (1) US20100116332A1 (fr)
EP (1) EP2153471A2 (fr)
JP (1) JP2010526430A (fr)
KR (1) KR20100016182A (fr)
CN (1) CN101681937A (fr)
BR (1) BRPI0810891A2 (fr)
FR (1) FR2915834B1 (fr)
MX (1) MX2009011912A (fr)
WO (1) WO2008148978A2 (fr)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2919429B1 (fr) * 2007-07-27 2009-10-09 Saint Gobain Substrat de face avant de cellule photovoltaique et utilisation d'un substrat pour une face avant de cellule photovoltaique
AU2008332347B2 (en) * 2007-12-05 2011-08-25 Kaneka Corporation Multilayer thin-film photoelectric converter and its manufacturing method
EP2190024A1 (fr) * 2008-11-19 2010-05-26 Université de Neuchâtel Dispositif photoélectrique a jonctions multiples et son procédé de realisation
DE102009006719A1 (de) * 2009-01-29 2010-08-12 Schott Ag Dünnschichtsolarzelle
JP5559704B2 (ja) * 2009-02-03 2014-07-23 株式会社カネカ 透明導電膜付き基板の製造方法ならびに多接合型薄膜光電変換装置および発光素子の製造方法
DE102009029944A1 (de) * 2009-06-19 2010-12-23 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Solarzelle und Verfahren zu deren Herstellung
JP5548400B2 (ja) * 2009-07-02 2014-07-16 株式会社カネカ 薄膜光電変換装置、及びその製造方法
FR2948230B1 (fr) 2009-07-16 2011-10-21 Saint Gobain Plaque transparente texturee et procede de fabrication d'une telle plaque
JP2011029289A (ja) * 2009-07-22 2011-02-10 Toray Eng Co Ltd 薄膜付基板及びそれを用いた太陽電池
US20120204953A1 (en) * 2009-10-08 2012-08-16 SolarExcel B.V. Optical structure with a flat apex
JP5659551B2 (ja) * 2010-04-28 2015-01-28 ソニー株式会社 透明導電性素子、入力装置、および表示装置
JP2012044147A (ja) * 2010-06-11 2012-03-01 Moser Baer India Ltd 光電デバイスでの反射防止バリア層
DE102010030301A1 (de) 2010-06-21 2011-12-22 Solayer Gmbh Substrat mit oberflächlich strukturierter Flächenelektrode
DE102010049976B4 (de) * 2010-10-18 2017-02-02 Universität Stuttgart Solarzelle mit texturierter Elektrodenschicht und Verfahren zur Herstellung einer solchen
DE102010051606A1 (de) * 2010-11-16 2012-05-16 Schott Solar Ag Glasscheibe zur Dünnschichtsolarmodul-Herstellung
KR20120053403A (ko) * 2010-11-17 2012-05-25 삼성전자주식회사 박막형 태양전지 및 그 제조방법
JP5071563B2 (ja) * 2011-01-19 2012-11-14 ソニー株式会社 透明導電性素子、入力装置、および表示装置
KR101143477B1 (ko) * 2011-01-28 2012-05-22 (재)나노소자특화팹센터 유기 태양전지 및 그 제조 방법
FR2971060B1 (fr) * 2011-01-31 2013-08-09 Saint Gobain Element transparent a reflexion diffuse
JP5494771B2 (ja) * 2011-09-30 2014-05-21 ダイキン工業株式会社 集光フィルム、太陽電池モジュール、及び、転写モールド
KR101421026B1 (ko) * 2012-06-12 2014-07-22 코닝정밀소재 주식회사 유기발광소자용 광추출층 기판 및 그 제조방법
DE102012214253A1 (de) * 2012-08-10 2014-06-12 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Laserbasiertes Verfahren und Bearbeitungstisch zur Metallisierung der Rückseite eines Halbleiterbauelements
CN103646998B (zh) * 2013-12-16 2016-08-17 陕西师范大学 增强硅薄膜太阳电池光吸收的织构横向错位方法
KR101441607B1 (ko) * 2014-02-13 2014-09-24 인천대학교 산학협력단 고효율 광전소자 및 그 제조방법
CN104867995B (zh) * 2015-04-27 2017-03-01 电子科技大学 二维余弦波形面陷光结构及基于该结构的太阳能薄膜电池
US10439062B2 (en) * 2016-09-09 2019-10-08 Infineon Technologies Ag Metallization layers for semiconductor devices and methods of forming thereof
US10937915B2 (en) 2016-10-28 2021-03-02 Tesla, Inc. Obscuring, color matching, and camouflaging solar panels
KR102500535B1 (ko) * 2017-12-06 2023-02-16 타타 스틸 리미티드 하이브리드 투명 전도성 전극
FR3089683B1 (fr) * 2018-12-10 2020-12-11 Commissariat Energie Atomique dispositif optronique

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4512848A (en) * 1984-02-06 1985-04-23 Exxon Research And Engineering Co. Procedure for fabrication of microstructures over large areas using physical replication
JPS61241983A (ja) * 1985-04-18 1986-10-28 Sanyo Electric Co Ltd 光起電力装置
EP0234222A2 (fr) * 1986-02-25 1987-09-02 Fuji Electric Corporate Research And Development Ltd. Batterie solaire
WO1997019473A1 (fr) * 1995-11-23 1997-05-29 Unisearch Limited Films de revetement conformes pour le piegeage de lumiere dans les cellules solaires a fine couche de silicium
JP2000124485A (ja) * 1998-10-12 2000-04-28 Sharp Corp 光電変換装置とその製造方法
WO2003019676A1 (fr) * 2001-08-23 2003-03-06 Pacific Solar Pty Limited Processus de revetement de billes de verre
EP1443527A1 (fr) * 2001-10-19 2004-08-04 Asahi Glass Company Ltd. Substrat a couche d'oxyde conductrice transparente, son procede de production et element de conversion photoelectrique
US6958207B1 (en) * 2002-12-07 2005-10-25 Niyaz Khusnatdinov Method for producing large area antireflective microtextured surfaces

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4497974A (en) * 1982-11-22 1985-02-05 Exxon Research & Engineering Co. Realization of a thin film solar cell with a detached reflector
JPS59152673A (ja) * 1983-02-19 1984-08-31 Semiconductor Energy Lab Co Ltd 光電変換装置作製方法
JPS63143875A (ja) * 1986-12-08 1988-06-16 Hitachi Ltd 太陽電池
US4808462A (en) * 1987-05-22 1989-02-28 Glasstech Solar, Inc. Solar cell substrate
JP3286577B2 (ja) * 1997-09-10 2002-05-27 株式会社日野樹脂 太陽電池モジュ−ル
US6335479B1 (en) * 1998-10-13 2002-01-01 Dai Nippon Printing Co., Ltd. Protective sheet for solar battery module, method of fabricating the same and solar battery module
JP3776606B2 (ja) * 1998-11-06 2006-05-17 三洋電機株式会社 透明電極基板の作製方法
JP2004172496A (ja) * 2002-11-21 2004-06-17 Tdk Corp 光電変換素子および光電変換素子の製造方法
JP4606775B2 (ja) * 2004-05-25 2011-01-05 電源開発株式会社 凹型酸化膜構造体

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4512848A (en) * 1984-02-06 1985-04-23 Exxon Research And Engineering Co. Procedure for fabrication of microstructures over large areas using physical replication
JPS61241983A (ja) * 1985-04-18 1986-10-28 Sanyo Electric Co Ltd 光起電力装置
EP0234222A2 (fr) * 1986-02-25 1987-09-02 Fuji Electric Corporate Research And Development Ltd. Batterie solaire
WO1997019473A1 (fr) * 1995-11-23 1997-05-29 Unisearch Limited Films de revetement conformes pour le piegeage de lumiere dans les cellules solaires a fine couche de silicium
JP2000124485A (ja) * 1998-10-12 2000-04-28 Sharp Corp 光電変換装置とその製造方法
WO2003019676A1 (fr) * 2001-08-23 2003-03-06 Pacific Solar Pty Limited Processus de revetement de billes de verre
EP1443527A1 (fr) * 2001-10-19 2004-08-04 Asahi Glass Company Ltd. Substrat a couche d'oxyde conductrice transparente, son procede de production et element de conversion photoelectrique
US6958207B1 (en) * 2002-12-07 2005-10-25 Niyaz Khusnatdinov Method for producing large area antireflective microtextured surfaces

Also Published As

Publication number Publication date
JP2010526430A (ja) 2010-07-29
BRPI0810891A2 (pt) 2014-10-29
FR2915834B1 (fr) 2009-12-18
CN101681937A (zh) 2010-03-24
EP2153471A2 (fr) 2010-02-17
US20100116332A1 (en) 2010-05-13
WO2008148978A2 (fr) 2008-12-11
FR2915834A1 (fr) 2008-11-07
KR20100016182A (ko) 2010-02-12
MX2009011912A (es) 2009-11-18

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