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WO2008148705A1 - Photodétecteur organique à transmission réglable, et procédé de fabrication correspondant - Google Patents

Photodétecteur organique à transmission réglable, et procédé de fabrication correspondant Download PDF

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Publication number
WO2008148705A1
WO2008148705A1 PCT/EP2008/056660 EP2008056660W WO2008148705A1 WO 2008148705 A1 WO2008148705 A1 WO 2008148705A1 EP 2008056660 W EP2008056660 W EP 2008056660W WO 2008148705 A1 WO2008148705 A1 WO 2008148705A1
Authority
WO
WIPO (PCT)
Prior art keywords
layer
transmission
organic
components
blend
Prior art date
Application number
PCT/EP2008/056660
Other languages
German (de)
English (en)
Inventor
Jens FÜRST
Debora Henseler
Edgar Zaus
Original Assignee
Siemens Aktiengesellschaft
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Aktiengesellschaft filed Critical Siemens Aktiengesellschaft
Publication of WO2008148705A1 publication Critical patent/WO2008148705A1/fr

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
    • H10K39/30—Devices controlled by radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/20—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising organic-organic junctions, e.g. donor-acceptor junctions
    • H10K30/211—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising organic-organic junctions, e.g. donor-acceptor junctions comprising multiple junctions, e.g. double heterojunctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/114—Poly-phenylenevinylene; Derivatives thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/115—Polyfluorene; Derivatives thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/151—Copolymers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
    • H10K85/211—Fullerenes, e.g. C60
    • H10K85/215—Fullerenes, e.g. C60 comprising substituents, e.g. PCBM
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the invention relates to an organic photodetector having an adjustable transmission and a manufacturing method thereof.
  • Organic photodetectors such as those from the
  • DE 10 2005 037 290.2 are known, usually comprise a layer system of a lower possibly metallic electrode, a photoactive layer which may be, for example, a blend of different components and a counter electrode, which in turn may be metallic.
  • organic photodetectors with an organic photoactive layer can be produced semitransparently.
  • This layer usually comprises two components, which may be present either as separate layers or as a blend.
  • the layer thickness of the layer system is reduced in such a way that the layers alone become translucent due to the reduction in their layer thickness, ie have increased transmission.
  • the disadvantage of this is that the spectral distribution of the transmission can not be influenced by the reduction of the layer thickness, so that only by accepting an otherwise poorer performance of the detector, especially with respect to dark currents, because of the small layer thickness increases the transmission of the detector as a whole can be.
  • the object of the present invention is therefore to provide an organically based photodetector, in 200 6174 96
  • the invention therefore relates to a photodetector based on organic semiconductors, comprising a layer system in which between a lower electrode and an upper
  • Counter-electrode is a photoactive layer containing at least three components in a blend and / or in a layer structure, which act as a hole and / or electron transport component.
  • the invention relates to a method for producing a photodetector, wherein on an at least semitransparent lower electrode, a blend layer is spun onto which in turn a further at least semitransparent top electrode is applied.
  • hole transport components act as electron donors and electron transport components as electron acceptors.
  • two or more hole transport components are combined, since these usually dominate the absorption behavior of the blend.
  • the light distribution associated with the image penetrates the electrode which faces the light distribution and is therefore made of an at least semitransparent material. Furthermore, the semiconductor layer in conjunction with the two electrodes converts the light distribution into electrical signals which are applied to the individual sub-electrodes of the structured electrode.
  • this semiconductor layer is, for example, a blend of the two components P3HT (absorber, electron 200 6174 96
  • the semiconductor layer may be constructed as a multiple monolayer comprising layer in the hole transport component and electron transport component in separate layers.
  • further materials are now added which change the transmission spectrum of the BuIk heterojunction, preferably selectively alter it.
  • further hole transport components are added, for example those which absorb little in the visible range or absorb at wavelengths other than the components present in the blend.
  • the proportions of the additional hole transport components must be selected accordingly.
  • absorber, hole transport, electron acceptor and / or electron transport components which can be introduced into the BuIk heterojunction in addition to the basic components such as P3HT / PCBM, for example copolymers of triarylamine components and fluorene (such as ADS250BE from American Dye Source) and or copolymers of triarylamine components and spirobifluorene components and / or poly (para-phenylenevinylene) derivatives (eg MEH-PPV or MDMO-PPV) and / or further polythiophene derivatives (eg P3OT).
  • copolymers of triarylamine components and fluorene such as ADS250BE from American Dye Source
  • copolymers of triarylamine components and spirobifluorene components and / or poly (para-phenylenevinylene) derivatives eg MEH-PPV or MDMO-PPV
  • polythiophene derivatives eg P3OT
  • the transmission spectrum can be adapted to the respective application.
  • the color with which the detector surface is perceived be influenced.
  • Another advantage is that by substituting the absorbing component, for example P3HT, with a transparent material having similar charge transport properties or a transparent material which does not hinder the electrical transport, the transmission can be varied over a wide range at a constant layer thickness without increasing the dark current and the short circuit susceptibility of the photodetectors.
  • the absorbing component for example P3HT
  • the invention not only relates to photodiodes on a polymer basis, but can also be applied to photoactive layers based on so-called small molecules or nanoparticles.
  • the procedure is, for example, as follows: onto a semitransparent bottom electrode (for example ITO), a blend layer is spin-coated. For this, the blend components are dissolved in a suitable solvent (e.g., chloroform or xylene).
  • a semitransparent top electrode e.g., a thin layer system of Ca and Ag is applied to the blend layer (e.g., by thermal evaporation).
  • Organic-based photodetectors can be produced relatively simply by applying the organic semiconductor layer to the solution using printing methods.
  • organic photodetectors have relatively high compatibility with various electronic driver technologies.
  • An organic photodetector may be used in addition to the photoactive layer, for example P3HT / PCBM, CuPc / PTCBI, 200 6174 96
  • ZNPC / C60 conjugated polymer components or fullerene components, comprise an electron / hole blocking layer.
  • Electron / hole blocking layers are known from organic LED technology.
  • a suitable organic material for the electron blocking layer is, for example, TFB.
  • FIG. 1 shows an example of a layer structure of a photodetector
  • FIG. 2 shows transmission spectra according to the prior art
  • FIG. 3 shows a graph in which transmission spectra are directly compared
  • FIG. 4 shows the influence on the electronic properties of the system
  • FIG. 5 shows an example of an additionally introduced component according to the invention.
  • FIG. 1 An exemplary embodiment of the structure of the organic photodiodes can be seen from FIG.
  • the structure is shown in the form of a stack consisting of top electrode 5, bottom electrode 3, the carrier substrate 1 and the organic photodiode layer 4.
  • Layer 6 shows a hole transporter that may be present but not necessarily present.
  • the actual photoconductive layer is designated by the reference numeral 4.
  • the photoconductive organic layer 4 may be a so-called "bulk heterojunction", for example realized as a blend of a hole-transporting polythiophene and an electron-transporting fullerene derivative.
  • the bottom electrode 3 may consist of indium tin oxide (ITO) or of another metal.
  • the top electrode 5 can consist of aluminum (Al) or, for example, also of a Ca / Ag layer system or of LiF / Al.
  • FIG. 2 shows the state of the art:
  • the transmission spectra of P3HT: PCBM layers as a function of the layer thicknesses can be seen.
  • the top, only 22nm thick layer is the one with the highest transmission, which can be explained simply by the layer thickness.
  • the other layers are in between, both in the layer thicknesses as well as in the transmission. It can be seen that the variation of the layer thicknesses alters the strength of the transmission, but not the shape of the spectrum.
  • the processing technologies of organic materials e.g. Spin coating makes it possible to produce very thin layers and to adjust their thickness within certain limits.
  • the transmission can be increased by reducing the layer thickness, the spectral distribution is not.
  • the electronic performance of the diodes usually becomes significantly worse, since with the low layer thicknesses ( ⁇ 70 nm), the dark currents and also the frequency of device short circuits increase sharply.
  • FIG. 3 shows the transmission spectra of different photoactive layers of approximately the same thickness (about 40 nm).
  • the shape of the spectrum can be changed.
  • the P3HT: PCBM layer (graph with a minimum at about 520 nm) has a higher transmission at about 390 nm, while the layer (maximum at about 420 nm) according to the invention shows a higher transmission in the range of 500 nm.
  • FIG. 4 shows a comparison of the current-voltage characteristics of equally thick photoactive layers, one according to the prior art and one according to the invention with and without illumination. It can be seen that the graphs differ only slightly from each other, so that the influence of the additional component (s) on the electronic properties of the system can be described as low.
  • the layer thicknesses of the layers shown are the same and about 40nm.
  • FIG. 5 shows an example of an additionally introduced component, the material ADS250BE from American Dye Source.
  • the invention features an organic semiconductor blend or organic photoactive layer comprising a layer of a hole transporting and an electron transporting component with optimized transmission properties.
  • the transmission is optimized by introducing into the organic photoactive layer a further component which alters the transmission spectrum of the mixture or of the layers.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Electromagnetism (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Light Receiving Elements (AREA)

Abstract

La présente invention concerne un photodétecteur organique à transmission réglable et un procédé de fabrication correspondant. L'invention concerne plus particulièrement un mélange semi-conducteur organique ou une couche photo-active organique, comprenant au moins une couche d'un composant transporteur de trous ou d'un composant transporteur d'électrons, aux propriétés de transmission optimisées. Pour optimiser la transmission, on a intégré à la couche photo-active organique un autre composant qui modifie le spectre de transmission du mélange ou des couches.
PCT/EP2008/056660 2007-06-04 2008-05-30 Photodétecteur organique à transmission réglable, et procédé de fabrication correspondant WO2008148705A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102007025975A DE102007025975A1 (de) 2007-06-04 2007-06-04 Organischer Photodetektor mit einstellbarer Transmission, sowie Herstellungsverfahren dazu
DE102007025975.3 2007-06-04

Publications (1)

Publication Number Publication Date
WO2008148705A1 true WO2008148705A1 (fr) 2008-12-11

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2008/056660 WO2008148705A1 (fr) 2007-06-04 2008-05-30 Photodétecteur organique à transmission réglable, et procédé de fabrication correspondant

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DE (1) DE102007025975A1 (fr)
WO (1) WO2008148705A1 (fr)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2849539A1 (fr) * 2002-12-30 2004-07-02 Nanoledge Dispositif comprenant au moins un type de nanostructure tubulaire ayant a sa surface au moins un pigment complexe
WO2007017475A1 (fr) * 2005-08-08 2007-02-15 Siemens Aktiengesellschaft Photodetecteur organique a sensibilite accrue et utilisation d'un polymere de triarylamine et de fluorene comme couche intermediaire dans un photodetecteur

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102005037289A1 (de) * 2005-08-08 2007-02-22 Siemens Ag Fotodetektor, Röntgenstrahlenflachbilddetektor und Verfahren zur Herstellung dergleichen
DE102005037290A1 (de) 2005-08-08 2007-02-22 Siemens Ag Flachbilddetektor

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2849539A1 (fr) * 2002-12-30 2004-07-02 Nanoledge Dispositif comprenant au moins un type de nanostructure tubulaire ayant a sa surface au moins un pigment complexe
WO2007017475A1 (fr) * 2005-08-08 2007-02-15 Siemens Aktiengesellschaft Photodetecteur organique a sensibilite accrue et utilisation d'un polymere de triarylamine et de fluorene comme couche intermediaire dans un photodetecteur

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
BELCHER ET AL: "The effect of porphyrin inclusion on the spectral response of ternary P3HT:porphyrin:PCBM bulk heterojunction solar cells", SOLAR ENERGY MATERIALS AND SOLAR CELLS, ELSEVIER SCIENCE PUBLISHERS, AMSTERDAM, NL, vol. 91, no. 6, 16 February 2007 (2007-02-16), pages 447 - 452, XP005892264, ISSN: 0927-0248 *
BRABEC C J ET AL: "Photoinduced FT-IR spectroscopy and CW-photocurrent measurements of conjugated polymers and fullerenes blended into a conventional polymer matrix", SOLAR ENERGY MATERIALS AND SOLAR CELLS, ELSEVIER SCIENCE PUBLISHERS, AMSTERDAM, NL, vol. 61, no. 1, 15 February 2000 (2000-02-15), pages 19 - 33, XP004244746, ISSN: 0927-0248 *
CHUN CHEN L ET AL: "Self organised polymer photodiodes for extended spectral coverage", THIN SOLID FILMS, ELSEVIER-SEQUOIA S.A. LAUSANNE, CH, vol. 363, no. 1-2, 1 March 2000 (2000-03-01), pages 286 - 289, XP004189328, ISSN: 0040-6090 *
WINDER C ET AL: "Sensitization of low bandgap polymer bulk heterojunction solar cells", THIN SOLID FILMS, ELSEVIER-SEQUOIA S.A. LAUSANNE, CH, vol. 403-404, 1 February 2002 (2002-02-01), pages 373 - 379, XP004430387, ISSN: 0040-6090 *

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