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WO2008146994A1 - Procédé de nettoyage et procédé de liaison de tranche l'utilisant - Google Patents

Procédé de nettoyage et procédé de liaison de tranche l'utilisant Download PDF

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Publication number
WO2008146994A1
WO2008146994A1 PCT/KR2007/005446 KR2007005446W WO2008146994A1 WO 2008146994 A1 WO2008146994 A1 WO 2008146994A1 KR 2007005446 W KR2007005446 W KR 2007005446W WO 2008146994 A1 WO2008146994 A1 WO 2008146994A1
Authority
WO
WIPO (PCT)
Prior art keywords
wafer
bonding
cleaning
bonding surface
process chamber
Prior art date
Application number
PCT/KR2007/005446
Other languages
English (en)
Inventor
In Sung Kim
Chien Yun Tao
Jeong Il Kang
Original Assignee
Ltrin Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020070097037A external-priority patent/KR100936778B1/ko
Application filed by Ltrin Co., Ltd. filed Critical Ltrin Co., Ltd.
Priority to JP2010510186A priority Critical patent/JP2010528484A/ja
Priority to US12/602,285 priority patent/US8278186B2/en
Publication of WO2008146994A1 publication Critical patent/WO2008146994A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02054—Cleaning before device manufacture, i.e. Begin-Of-Line process combining dry and wet cleaning steps
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
    • H01L21/02065—Cleaning during device manufacture during, before or after processing of insulating layers the processing being a planarization of insulating layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/185—Joining of semiconductor bodies for junction formation
    • H01L21/187—Joining of semiconductor bodies for junction formation by direct bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H01L21/2003—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate
    • H01L21/2007—Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76248—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using lateral overgrowth techniques, i.e. ELO techniques
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

Definitions

  • the present invention relates to a wafer cleaning method that can improve a yield of cleaning process and bonding properly in bonding the cleaned wafer by using atmospheric pressure plasma and cleaning solution.
  • the present invention relates to a wafer bonding method that can improve a process yield and bonding proeprty by surface-treating the wafer while cleaning the wafer by using atmospheric pressure plasma and cleaning solution.
  • a direct bonding method for wafers is known as a high integration method for a semiconductor device.
  • wafers are directly bonded to each other by using organic/inorganic adhesives or without using the adhesives in a method of manufacturing a SOI (Silicon On Insulator) or forming P-N junction by combining a P type wafer with a N type wafer.
  • SOI Silicon On Insulator
  • the wafers can be bonded at a low temperature, but the method is not widely used because of interfacial stress and thermally or chemically unstable adhesive layer.
  • cleaning and surface treatment are performed to reduce bonding defects before bonding the wafer.
  • the cleaning and the surface treatment are separately performed, there is a problem that the process yield is reduced.
  • planarization process of wafer surface is performed for reducing bonding defects before bonding the wafers.
  • a chemical mechanical polishing (CMP) is usually used as the planarization method.
  • CMP chemical mechanical polishing
  • polishing is performed in a separate CMP process device and then the wafer bonding process is performed and thus, the processes should be separately performed. Accordingly, the process efficiency is reduced and a pollution problem is caused by slurry used in the CMP process.
  • surface steps remain even after completion of polishing, thereby causing bonding defects in bonding of the final wafer.
  • an object of the present invention is to provide a wafer cleaning method that can improve a yield of cleaning process and bonding properly in bonding the cleaned wafer by surface-treating the wafer while cleaning the wafer by using atmospheric pressure plasma and cleaning solution in a single process.
  • Another object of the present invention is to provide a wafer bonding method that can improve a process yield and bonding property by surface-treating the wafer while cleaning the wafer by using atmospheric pressure plasma and cleaning solution in a single process.
  • a still another object of the present invention is to provide a wafer bonding method that can perform planarization process and wafer bonding process in situ.
  • a wafer cleaning • method which includes: (a) providing a process chamber with a wafer whose bonding surface faces upward; (b) cleaning and surface-treating the bonding surface of the wafer by supplying atmospheric pressure plasma and a cleaning solution to the bonding surface of the wafer; and (c) withdrawing out the wafer from the process chamber.
  • the process chamber may be formed so as to supply the atmospheric pressure plasma and cleaning solution simultaneously.
  • an activated gas for the atmospheric pressure plasma may be formed of any one selected from a group consisting of nitrogen, oxygen, argon (Ar) and helium (He), or mixture thereof.
  • the cleaning solution may be formed of a deionized water or a H 2 O r NH 4 OH-H 2 O(SC-I) solution.
  • the atmospheric pressure plasma and cleaning solution may be supplied simultaneously or sequentially.
  • the cleaning solution may be supplied in vaporized particles by heating or ultrasonic wave. Or, the cleaning solution may be supplied in particles by nozzle spray.
  • the atmospheric pressure plasma and cleaning solution may be supplied to the wafer while the wafer is rotated.
  • the atmospheric pressure plasma and cleaning solution may be sequentially supplied from one side of the wafer to the other side.
  • the wafer cleaning method may further include (d) drying the wafer after the step (b).
  • the step (d) may be performed by a spin drying method of drying the wafer by rotating it or a blowing drying method of drying the wafer by blowing inert gas to the bonding surface.
  • a wafer bonding method which includes: (a 1 ) providing a first process chamber with a first wafer whose bonding surface faces upward; (b 1 ) cleaning and surface-treating the bonding surface of the first wafer by supplying atmospheric pressure plasma and a cleaning solution to the bonding surface of the first wafer; (c 1 ) withdrawing out the first wafer from the first process chamber and providing a second process chamber with the first wafer; (d 1 ) providing a third process chamber with a second wafer whose bonding surface faces upward; (e 1 ) cleaning and surface-treating the bonding surface of the second wafer by supplying atmospheric pressure plasma and a cleaning solution to the bonding surface of the second wafer; (f ) withdrawing out the second wafer from the third process chamber and providing the second process chamber with the second wafer whose bonding surface faces to the bonding surface of the first wafe ⁇ and (g 1 ) bonding the bonding surfaces of the first and second wafers to each other
  • the first and third process chambers may be formed so as to supply the atmospheric pressure plasma and cleaning solution simultaneously, and the second process chamber may be formed of a vacuum chamber.
  • the first and third process chambers may be formed of the same process chamber.
  • an activated gas for forming the atmospheric pressure plasma may be formed of any one selected from a group consisting of nitrogen, oxygen, argon (Ar) and helium (He), or mixture thereof.
  • the cleaning solution may be formed of a deionized water or a H 2 O 2 - NH 4 OH-H 2 O(SC-I ) solution.
  • the atmospheric pressure plasma and cleaning solution may be supplied simultaneously or sequentially.
  • the cleaning solution may be supplied in vaporized particles by heating or ultrasonic wave. Or, the cleaning solution may be supplied in particles by nozzle spray.
  • the atmospheric pressure plasma and cleaning solution may be supplied to the first or second wafer while the first or second wafer is rotated.
  • the atmospheric pressure plasma and cleaning solution may be sequentially supplied from one side of the first or second wafer to the other side.
  • the wafer cleaning method may further include (h 1 ) drying the first or second wafer after the step (b 1 ) or (e 1 ).
  • the step (h 1 ) may be performed by a spin drying method of drying the first or second wafer by rotating it or a blowing drying method of drying the first or second wafer by blowing inert gas to the bonding surface of the first or second wafer.
  • a wafer bonding method which includes: (a") coating a SOG layer on a bonding surface of a first wafer by supplying a SOG solution; (b") forming a SOG film on the bonding surface of the first wafer by planarizing the SOG layer by pressing it with a flat plate panel and curing the SOG laye ⁇ (c") providing a first process chamber with the first wafer having the SOG film formed thereon, the bonding surface of the first waferfacing upward; (d”) cleaning and surface-treating the bonding surface of the first wafer by supplying atmospheric pressure plasma and a cleaning solution to the bonding surface of the first wafer, (e") withdrawing out the first wafer from the first process chamber and providing a second process chamber with the first wafer; (f ) providing a third process chamber with a second wafer whose bonding surface faces upward; (g”) cleaning and surface-treating the bonding surface of the second wafer by supplying atmospheric pressure plasma and
  • the SOG solution may be formed of silicate group or siloxane group materials.
  • the flat plate panel may be formed of any one selected from a group consisting of polyether ether ketone (PEEK), polyether imide (PEI), polycarbonate (PC), polybutilene terephthalate (PBT) and mono cast nylon.
  • the flat plate panel is formed of transparent panel.
  • the SOG film may be formed by curing the SOG layer by irradiating UV ray to the SOG layer pressed with the transparent panel.
  • steps (a") to (i") may be performed in situ.
  • the wafer cleaning method according to the present invention produces the following effects.
  • the surface treatment and cleaning of the wafer are performed while supplying the atmospheric pressure plasma and cleaning solution in a single process, thereby improving yields of the cleaning process.
  • the surface treatment and cleaning of the wafer are performed in a single process, thereby improving productivity of wafer bonding and bonding property.
  • the contact area between a semiconductor device and a susceptor is relatively narrow at the inside part. Accordingly, amount of heat transferred to the inside of the semiconductor becomes smaller than that transferred to the outside and thus the whole of the semiconductor device is uniformly pre-heated, thereby preventing the semiconductor from being deformed by local temperature difference.
  • the wafer bonding method according to the present invention produces the following effects.
  • the surface treatment and cleaning of the wafer are performed while supplying the atmospheric pressure plasma and cleaning solution in a single process, thereby improving bonding property.
  • the surface treatment and cleaning of the wafer are performed in a single process, thereby improving yields of the process, productivity and bonding properly.
  • the wafer planarizing process and wafer bonding process are performed in situ and thus pollution of the surface of the wafer is prevented, thereby improving bonding property.
  • FIG. 1 is a schematic diagram illustrating a system for a wafer cleaning method according to an exemplary embodiment of the present invention
  • FIG. 2 is a flow chart illustrating the wafer cleaning method
  • FIG. 3 is a schematic diagram illustrating a system for a wafer bonding method according to an exemplary embodiment of the present invention
  • FIG.4 is a flow chart illustrating the wafer bonding method
  • FIG. 5 is a flow chart illustrating a wafer bonding method according to another exemplary embodiment of the present invention.
  • FIGS. 6 and 7 are views illustrating states of a bonding surface of wafer before and after the cleaning and surface treatment according to a first embodiment of the present invention respectively;
  • FIGS. 8 and 9 are views illustrating states of bonding surfaces of wafer before and after cleaning and surface treatment according to a second embodiment of the present invention respectively;
  • FIGS. 10 and 11 are views illustrating states of bonding surfaces of wafer before and after cleaning and surface treatment according to a first comparison example of the present invention respectively; and FIG. 12 is a view illustrating a state of a bonding surface of wafer after cleaning according to a second comparison example.
  • FIG. 1 is a schematic diagram illustrating a system for a wafer cleaning method according to an exemplary embodiment of the present invention.
  • the system for the wafer cleaning method includes a process chamber 10.
  • the system for the wafer cleaning method may further include a vacuum chamber 20.
  • the process chamber 10 is a chamber for cleaning and surface-treating a surface of a wafer provided in the process chamber 10.
  • the process chamber 10 is formed so as to simultaneously supply atmospheric pressure plasma and cleaning solution to the surface of the wafer. That is, the process chamber 10 includes both of a atmospheric pressure plasma forming device and a cleaning solution supply device 12. Further, the process chamber 10 includes a vacuum chuck 14 for fixing the wafer 1. In addition, the process chamber 10 may further include a drying unit 16 for drying the cleaned wafer.
  • the vacuum chamber 20 is a chamber for bonding the wafer 2 provided after cleaning and surface-treatment.
  • the vacuum chamber 20 can form a vacuum state and may further include a heater.
  • the vacuum chamber 20 includes a vacuum chuck 24a, 24b for fixing the wafer 2.
  • a system for only the wafer cleaning method may not include the vacuum chamber 20.
  • FIG. 2 shows a flow chart illustrating the wafer cleaning method.
  • the wafer cleaning method includes providing a wafer (S10), cleaning and surface-treating the wafer (S20) and withdrawing out the wafer (S30).
  • the wafer cleaning method may further include a step of drying the wafer (S25) after the step S20.
  • the wafer cleaning method may be used in a bonding process for bonding the wafer and applied to the cleaning and surface-treating process performed before the wafer bonding process.
  • the surface of the wafer is surface-treated while cleaning it in a single process, thereby improving a yield of the cleaning and surface- treating process.
  • the surface of the wafer is surface-treated while cleaning it by supplying the atmospheric pressure plasma and cleaning solution simultaneously or sequentially on the surface of the wafer in one process chamber.
  • efficiency and productivity of the wafer cleaning process are improved.
  • the wafer cleaning method can be performed in one process chamber provided in one system. That is, the step of wafer cleaning and surface-treating is performed in one process chamber and accordingly the cleaning process is more efficiently performed, thereby improving productivity. Further, the wafer cleaning and surface-treatment are performed in one process chamber and thus, additional pollution is prevented, thereby improving quality of the wafer cleaning and surface-treatment.
  • the process chamber is provided with a wafer whose bonding surface faces upward.
  • -the bonding surface of the wafer means one surface of both surfaces of the wafer, the surface being bonded to other wafer.
  • the process chamber is provided with the wafer for bonding and seated with the wafer, and supplied with the atmospheric pressure plasma and cleaning solution together.
  • the wafer is provided in the process chamber so that the bonding surface faces upward, and fixed by an electrostatic chuck or a vacuum chuck.
  • the bonding surface of the wafer may be a state that a silicon oxide film is formed on single crystal silicon in a predetermined thickness.
  • the bonding surface of the wafer may be a state that a native oxide film of SiO 2 is formed on single crystal silicon.
  • the bonding surface of the wafer is cleaned and surface-treated by supplying the atmospheric pressure plasma and cleaning solution to the bonding surface of the wafer.
  • the process chamber can supply the atmospheric pressure plasma and cleaning solution simultaneously.
  • the process chamber supplies the atmospheric pressure plasma and cleaning solution to the bonding surface of the wafer, thereby removing pollutants such as organic materials and fingerprints existing on the surface of the wafer by the cleaning solution.
  • the bonding surface of the wafer is surface-treated while being cleaned by the atmospheric pressure plasma.
  • Si-O bonds of the silicon oxide film existing on the bonding surface of the wafer are broken by the atmospheric pressure plasma, and thus Si groups are exposed on the bonding surface of the wafer.
  • H 2 O bonds existing in the cleaning solution are broken by the atmospheric pressure plasma and thus 0-H groups are released. Accordingly, the Si group existing on the surface of the wafer keeps a state of being bonded to the 0-H group.
  • the atmospheric pressure plasma and cleaning solution may be simultaneously or sequentially supplied. More particularly, the atmospheric pressure plasma and cleaning solution may be simultaneously supplied to the bonding surface of the wafer. Or, the atmospheric pressure plasma and cleaning solution may be alternatively supplied. In other words, the cleaning solution is firstly supplied to the bonding surface of the wafer, and then the atmospheric pressure plasma is supplied to the wafer. In addition, each of the cleaning solution and atmospheric pressure plasma may be alternatively supplied more than two times.
  • the atmospheric pressure plasma and cleaning solution are supplied in a single process performed in the process chamber and thus cleaning and surface-treating process can be more efficiently performed.
  • the wafer is surface-treated simultaneously with cleaning by the cleaning solution, and thus the cleaning and surface- treating can be more efficiently performed.
  • a process time can be controlled according to a state of pollution of the wafer, thereby improving productivity.
  • a gas for forming the atmospheric pressure plasma may be formed of any one selected from a group consisting of nitrogen, oxygen, argon (Ar) and helium (He), or mixture thereof, but not limited thereto. Various gases capable of forming the atmospheric pressure plasma may be used.
  • a deionized water or a H 2 O 2 -NH 4 OH-H 2 O(SC-I) solution may be used as the cleaning solution.
  • the cleaning solution removes pollutants such as organic materials, dusts, etc. existing on the bonding surface of the wafer.
  • the cleaning solution cleans the bonding surface of the wafer together with the atmospheric pressure plasma, and thus the surface of the wafer is more efficiently cleaned.
  • the cleaning solution supplies 0-H ions bonded to Si ions existing on the bonding surface of the wafer.
  • Various cleaning solutions available in a semiconductor process may be used as the cleaning solution.
  • the cleaning solution may be supplied in vaporized particles by heating or ultrasonic wave. Or, the cleaning solution may be supplied in particles by nozzle spray.
  • the cleaning solution is supplied to the bonding surface of the wafer in particles such as vapors or mists, and thus it can be more uniformly supplied to the bonding surface of the wafer.
  • the cleaning solution is uniformly supplied in particles on the whole, and thus does not affect formation of the atmospheric pressure plasma.
  • the cleaning solution and atmospheric pressure plasma may be supplied sequentially from one side of the wafer to the other side.
  • a unit supplying the cleaning solution and atmospheric pressure plasma may scan from one side of the wafer to the other side and supply the cleaning solution and atmospheric pressure plasma. Accordingly, the cleaning solution and atmospheric pressure plasma are uniformly supplied to the wafer, and thus cleaning and surface-treating can be uniformly performed on the whole.
  • the cleaning solution existing on the bonding surface of the wafer is removed and the bonding surface of the wafer is dried.
  • the cleaning solution supplied for bonding with other wafer remains on the bonding surface of the wafer. Accordingly, the cleaning solution on the bonding surface of the wafer should be removed for bonding with other wafer.
  • the cleaning solution is removed while the wafer passes through annealing process after it is bonded. Therefore, the cleaning solution existing on the bonding surface of the wafer may be not completely removed. However, it is desirable to remove the cleaning solution because it disturbs bonding when a large amount of cleaning solution exists on the bonding surface of the wafer.
  • the step S25 may be performed by a spin drying method of drying the wafer by rotating it or a blowing drying method of drying the wafer by blowing an inert gas such as nitrogen to the bonding surface.
  • the cleaning solution remained on the bonding surface of the wafer can be dried by the spin drying method or the blowing drying method because it may be not completely removed as described above.
  • the wafer is withdrawn out from the process chamber.
  • the process chamber can supply the atmospheric pressure plasma and cleaning solution.
  • the wafer withdrawn out from the process chamber is provided to a separate vacuum chamber for bonding with other wafer.
  • the vacuum chamber is a chamber for bonding the wafer and is kept in vacuum.
  • the vacuum chamber is provided with a separate heater so as to anneal the bonded wafer.
  • the vacuum chamber may be included in the same system as the process chamber.
  • the wafer and other wafer can be sequentially provided to the vacuum chamber and bonded to each other.
  • the wafer and other wafer without being cleaned and surface-treated may be sequentially provided to the vacuum chamber and then bonded to each other.
  • the wafer bonding method uses the wafer cleaning method as described above.
  • FIG. 3 is a schematic diagram illustrating the system for the wafer bonding method.
  • the system for the wafer cleaning method includes a first process chamber 110, a second process chamber 120 and a third process chamber 130.
  • the first and third process chambers 110 and 130 are chambers for cleaning and surface-treating the surface of provided wafer.
  • the first and third process chambers 110 and 130 are formed so as to simultaneously supply atmospheric pressure plasma and cleaning solution to the surfaces of the wafers 11 and 12. That is, the first and third process chambers 110 and 130 include both of a atmospheric pressure plasma forming device and a cleaning solution supply device 112, 132. Further, the first and third process chambers 110 and 130 include vacuum chucks 114 and 134 for fixing the wafers 11 and 12. On the other hand, the first and third process chambers may be formed in one chamber.
  • the second process chamber 120 is a chamber for bonding the wafers 13 and 14 provided after cleaning and surface-treatment. The second process chamber 120 can form a vacuum and may further include a heater. In addition, the second process chamber 120 includes vacuum chucks 124a and 124b fixing provided wafers 13 and 14.
  • FIG.4 shows a flow chart illustrating the wafer cleaning method.
  • the wafer cleaning method includes providing a first wafer (S110), cleaning and surface-treating the first wafer (S120), withdrawing out and providing the first wafer (S130), providing a second wafer (S140), cleaning and surface-treating the second wafer (S150), withdrawing out and providing the second wafer (S160) and bonding the wafer (S170).
  • the wafer bonding method may further include a step of drying the second wafer (S155) after the step (S150).
  • the surface of the wafer is surface-treated while cleaning it in a single process, thereby reducing bonding combination during the wafer bonding process.
  • the surface of the wafer is surface-treated while cleaning it by supplying the atmospheric pressure plasma and cleaning solution simultaneously or sequentially on the surface of the wafer in one process chamber.
  • the wafer bonding method may be performed in situ process in one system. That is, the steps S120, S150 and S170 may be respectively performed in separate process chambers included in one system.
  • the in situ process all processes for wafer bonding are 5 performed in one system, and thus the process is more efficiently performed, thereby improving productivity. Further, the in situ process prevents the surface of the wafer from being additionally polluted, thereby minimizing bonding defects of the wafer.
  • a first process chamber is provided with a first wafer whose bonding surface faces upward.
  • the bonding surface of the first wafer means one surface of both 0 surfaces of the wafer, the surface being bonded to other wafer.
  • the first process chamber is provided with the wafer for bonding and seated with the wafer, and supplied with the atmospheric pressure plasma and cleaning solution together.
  • the first wafer is provided in the process chamber so that the bonding surface faces upward, and fixed by an electrostatic chuck or a vacuum chuck.
  • the bonding surface of the first wafer may be a state that a silicon oxide 5 film is formed on single crystal silicon in a predetermined thickness.
  • the bonding surface of the first wafer may be a state that a native oxide film of SiO 2 is formed on single crystal silicon.
  • the bonding surface is cleaned and surface-treated by supplying the atmospheric pressure plasma and cleaning solution to the bonding surface of the first wafer.
  • the first process chamber can supply the atmospheric pressure plasma and O cleaning solution simultaneously.
  • the first process chamber supplies the atmospheric pressure plasma and cleaning solution to the bonding surface of the first wafer, thereby removing pollutants such as organic materials and fingerprints existing on the surface of the first wafer by the cleaning solution. 5
  • the bonding surface of the first wafer is surface-treated while being cleaned by the atmospheric pressure plasma.
  • Si-O bonds of the silicon oxide film existing on the bonding surface of the first wafer are broken by the atmospheric pressure plasma, and thus Si groups are exposed on the bonding surface of the first wafer.
  • H 2 O bonds existing in the cleaning solution are broken by the atmospheric pressure plasma and thus 0-H groups are O released. Accordingly, the Si group existing on the surface of the wafer keeps a state of being bonded to the 0-H group.
  • the atmospheric pressure plasma and cleaning solution may be simultaneously or sequentially supplied. More particularly, the atmospheric pressure plasma and cleaning solution may be simultaneously supplied to the bonding surface of the first wafer. Or 1 the atmospheric 5 pressure plasma and cleaning solution may be alternatively supplied. In other words, the cleaning solution is firstly supplied to the bonding surface of the first wafer, and then the atmospheric pressure plasma is supplied to the first wafer. In addition, each of the cleaning solution and atmospheric pressure plasma may be alternatively supplied more than two times. In the step S120, the atmospheric pressure plasma and cleaning solution are supplied in a single process performed in the first process chamber and thus cleaning and surface- treating process can be more efficiently performed. In addition, the first wafer is surface-treated simultaneously with cleaning by the cleaning solution, and thus the cleaning and surface- treating can be more efficiently performed.
  • a gas for forming the atmospheric pressure plasma may be formed of any one selected from a group consisting of nitrogen, oxygen, argon (Ar) and helium (He), or mixture thereof, but not limited thereto.
  • gases capable of forming the atmospheric pressure plasma may be used.
  • a deionized water or a H 2 O 2 -NH 4 OH-H 2 O(SC-I) solution may be used as the cleaning solution.
  • the cleaning solution removes pollutants such as organic materials, dusts, etc. existing on the bonding surface of the first wafer.
  • the cleaning solution cleans the bonding surface of the first wafer together with the atmospheric pressure plasma, and thus the surface of the first wafer is more efficiently cleaned.
  • the cleaning solution supplies O- H ions bonded to Si ions existing on the bonding surface of the first surface.
  • Various cleaning solutions available in a semiconductor process may be used as the cleaning solution.
  • the cleaning solution may be supplied in vaporized particles by heating or ultrasonic wave. Or, the cleaning solution may be supplied in particles by nozzle spray.
  • the cleaning solution is supplied to the bonding surface of the first wafer in particles such as vapors or mists, and thus it can be more uniformly supplied to the bonding surface of the first wafer.
  • the cleaning solution is uniformly supplied in particles on the whole, and thus does not affect formation of the atmospheric pressure plasma.
  • the cleaning solution may be supplied while rotating the first wafer. Accordingly, the cleaning solution and atmospheric pressure plasma are uniformly supplied to the first wafer, and thus cleaning and surface-treating can be uniformly performed on the whole.
  • the cleaning solution and atmospheric pressure plasma may be supplied sequentially from one side of the first wafer to the other side. In other words, a unit supplying the cleaning solution and atmospheric pressure plasma may scan from one side of the first wafer to the other side and supply the cleaning solution and atmospheric pressure plasma. Accordingly, the cleaning solution and atmospheric pressure plasma are uniformly supplied to the first wafer, and thus cleaning and surface-treating can be uniformly performed on the whole.
  • the cleaning solution existing on the bonding surface of the first wafer is removed and the bonding surface is dried.
  • the cleaning solution supplied for bonding with other wafer remains on the bonding surface of the first wafer. Accordingly, the cleaning solution on the bonding surface of the first wafer should be removed for bonding with other wafer.
  • the cleaning solution is removed while the first wafer passes through annealing process after it is bonded with a second wafer. Therefore, the cleaning solution existing on the bonding surface of the first wafer may be not completely removed. However, it is desirable to remove the cleaning solution because it disturbs bonding when a large amount of cleaning solution exists on the bonding surface of the first wafer.
  • the step S125 may be performed by a spin drying method of drying the first wafer by rotating it or a blowing drying method of drying the first wafer by blowing an inert gas such as nitrogen to the bonding surface of the first wafer.
  • the cleaning solution remained on the bonding surface of the first wafer can be dried by the spin drying method or the blowing drying method because it may be not completely removed as described above.
  • the first wafer is withdrawn out from the first process chamber and provided to the second process chamber.
  • the first process chamber can supply the atmospheric pressure plasma and cleaning solution.
  • the second process chamber can form a vacuum.
  • the second process chamber may include a heater for heating its inside according to a need.
  • the first wafer is withdrawn out from the first process chamber after cleaning and surface-treating is completed, and provided to the second process chamber for bonding with other wafer. In this time, the first wafer may be provided so that its bonding surface faces upward.
  • the third process chamber is provided with the second wafer whose bonding surface faces upward.
  • the step S140 is the same as the step S110 except that the second wafer is provided to the third process chamber, and therefore detailed explanation will be omitted.
  • the third process chamber can supply the atmospheric pressure plasma and cleaning solution together similar to the first process chamber.
  • a process time for wafer bonding can be reduced.
  • the step S140 may be performed in the first process chamber where the first wafer is cleaned and surface-treated.
  • the third process chamber may be the same process chamber as the first process chamber.
  • the process timed may be relatively extended.
  • a structure of the bonding device for wafer can be more simplified.
  • step S150 the bonding surface of the second wafer is cleaned and surface- treated by supplying the atmospheric pressure plasma and cleaning solution to the bonding surface of the second wafer.
  • the step S150 is the same as the step S120 except that the second wafer is cleaned and surface-treated in the third process chamber, and therefore detailed explanation will be omitted.
  • step S155 the bonding surface of the second wafer is dried by removing the cleaning solution existing on the bonding surface of the second wafer.
  • the step S155 is the same as the step S125 except that the second wafer is dried in the third process chamber, and therefore detailed explanation will be omitted.
  • the second wafer is withdrawn out from the third process chamber and provided to the second process chamber so that the bonding surface of the second wafer faces upward.
  • the step S160 is similar to the step S130, and therefore detailed explanation will be omitted.
  • the bonding surface of the second wafer is provided so as to face to the bonding surface of the first wafer.
  • the bonding surface of the second wafer is provided so as to be spaced from the bonding surface of the first wafer.
  • the second and first wafers may be spaced from each other by a spacer plated arranged at the outside.
  • the bonding surfaces of the first and second wafers are bonded to each other in the second process chamber.
  • the bonding surfaces of the first and second wafers are contacted to each other, and then pressurized by a predetermined pressure applied by a pressing unit located on them.
  • the first and second wafers are bonded while being contacted to each other.
  • the first and second wafers are contacted by pressing, and then completely bonded by completely removing the cleaning solution through annealing. More particularly, when the bonding surfaces of the first and second wafers are bonded to each other by pressing, Si-O-H group existing on the bonding surface of the first wafer is bonded to Si-O-H group existing on the bonding surface of the second wafer.
  • 0-H groups existing on the bonding surface of the first wafer form Van der Waals bonds with O-H groups existing on the bonding surface of the second wafer.
  • water (H 2 O) exist between the bonding surfaces of the first and second wafers.
  • the first and second wafers are completely bonded by Si-O-Si bond while H 2 O is released from bonds of S-O-H groups of the first and second wafers through annealing process.
  • the water existing between the bonding surfaces of the first and second wafers is completely removed through the annealing process.
  • the wafer bonding method includes the steps of coating a SOG (spin on glass) layer (S11), forming a SOG film (S15), providing a first wafer (S110), cleaning and surface-treating the first wafer (S120), withdrawing out the first wafer and providing it (S130), providing a second wafer (S140), cleaning and surface-treating the second wafer (S150), withdrawing out the second wafer and providing it (S160) and bonding the wafers (S170).
  • the wafer bonding method may further include a step S125 of drying the first wafer after the step S120.
  • the wafer bonding method may further include a step S155 of drying the second wafer after the step S150.
  • the wafer bonding method further includes the steps S11 and S15 in comparison with the wafer bonding method shown in FIG.4. That is, according to the wafer bonding method, the bonding surface of at least one wafer before the step S120 or S150 is planarized for improving the contact state of the bonding surface, thereby allowing the wafer to be strongly bonded.
  • the steps S11 and S15 may be performed for any one of the first and second wafers depending on the planarized state of the first and second wafers.
  • the steps S11 and S15 may be performed for both of the first and second wafers. There will be explained about the case where the SOG film is formed on the first wafer below.
  • the bonding surface of the first wafer is coated with the SOG layer by supplying a SOG solution to it.
  • the SOG solution is a liquid substance formed by melting glass in an organic solvent.
  • the SOG solution may be formed of a copolymer made by reacting silicate group or siloxane group dielectric material with a solvent such as toluene.
  • the SOG layer has a photocurable property and is cured to a hard film by UV ray radiation.
  • Various solutions generally used in a semiconductor process may be used as the SOG solution, but not limited thereto.
  • the bonding surface of the first wafer is coated with the SOG solution by the spin coating method, that is, by spraying the SOG solution on the bonding surface of the first wafer while rotating the first wafer whose bonding surface faces upward.
  • the first wafer is rotated in a speed of 200rpm to 500rpm, and the rotation speed may be changed according to viscosity of the SOG solution.
  • the SOG layer is formed in thickness of thousands of A to tens of thousands of A .
  • the SOG layer is planarized by pressing with a flat plate panel and cured, thereby forming the SOG film on the bonding surface of the first wafer.
  • the surface of the SOG layer coated on the bonding surface of the first wafer may be uneven. Therefore, the SOG layer is planarized by pressing with the flat plate panel before it is cured.
  • the flat plate panel may be formed of an engineering plastic material of high mechanical strength such as polyether ether ketone (PEEK), polyether imide (PEI), polycarbonate (PC), polybutilene terephthalate (PBT) or mono cast nylon materials.
  • PEEK polyether ether ketone
  • PEI polyether imide
  • PC polycarbonate
  • PBT polybutilene terephthalate
  • mono cast nylon materials it is desirable that the flat plate panel is formed of a transparent material such as a polycarbonate resin that can transmit UV ray.
  • the SOG layer is planarized by pressing with the flat plate panel, and then cured by UV ray radiation, thereby forming the SOG film.
  • the SOG layer may be cured by UV ray radiation after the flat plate panel is removed.
  • the SOG layer may be cured by UV ray irradiated through the flat plate panel while the SOG layer is pressed by the flat plate panel.
  • the SOG film can be formed in more planar. The surface of the first wafer provided with the SOG film becomes the bonding surface.
  • the steps S11 to S170 may be performed in situ in one system.
  • each of the steps S11 , S120, S150 and S170 may be performed in a separate chamber provided in one system.
  • the in situ process all processes for wafer bonding are performed in one system and thus the process is more efficiently performed, thereby improving productivity.
  • the in situ process prevents the surface of the wafer from being additionally polluted during the wafer bonding process, thereby minimizing bonding defects of the wafer.
  • FIGS. 6 and 7 are photographs illustrating a wafer surface before and after cleaning and surface treatment according to the example 1.
  • First (RMA: about 1 nm) and second wafers of 8 inches were seated on a chuck of process chamber of an A type atmospheric pressure plasma device having power of 1 ,00OW.
  • the first and second wafers may be planarized by CMP (Chemical Mechanical Polishing) process if it is needed. Fingerprints were arbitrarily formed on a bonding surface of the first wafer for evaluating cleanness of the wafer in the step of cleaning and surface-treating.
  • the first and second wafers were cleaned and surface-treated by supplying atmospheric pressure plasma and water vapor together to the bonding surfaces of the wafers, where the atmospheric pressure plasma was formed by supplying nitrogen in 300 liter/min under atmospheric pressure, and the water vapor was formed by heating a deionized water.
  • the atmospheric pressure plasma and water vapor were simultaneously supplied to the bonding surface of the wafer by a scan method.
  • the water vapor was supplied in vaporized particles formed by heating the deionized water.
  • the water vapor was supplied together with nitrogen, and the feed amount of the nitrogen was 5 liter/min.
  • the bonding surfaces of the first and second wafers were dried by a spin drying process after the cleaning and surface-treatment was completed. Then, the first and second wafers were sequentially transferred to a vacuum chamber and aligned, then pressurized, bonded and annealed.
  • fingerprints were formed on the bonding surface of the first wafer before the cleaning and surface-treatment.
  • fingerprints were removed from the bonding surface of the first wafer after the cleaning and surface-treatment. Accordingly, it was confirmed that the cleaning and surface-treatment was completely performed for the bonding surface of the first wafer in the step of cleaning and surface-treating.
  • the wafers bonded according to the example 1 had improved bonding states. That is, bonding strength between the first and second wafers bonded in the vacuum chamber was higher than 220m JM. After annealing at a temperature of 300 ° C , the bonding strength of the bonded wafers was higher than 2300m JM. Thus, it was confirmed that the first and second wafers bonded according to the example 1 had improved bonding strength.
  • FIGS. 8 and 9 are photographs illustrating a wafer surface before and after cleaning and surface treatment according to the example 2.
  • the bonding strength of the wafers before annealing was higher than 22OmJM After annealing at a temperature of 300 ° C , the bonding strength of the bonded wafers was higher than 2300m J/rrf. Thus, it was confirmed that the first and second wafers bonded according to the example 2 had improved bonding strength.
  • a bonding surface of a first wafer of 3 inches was coated with a SOG solution by spin coating so as to form a SOG layer.
  • the SOG layer was planarized by pressing its upper part with a transparent panel and photocured by irradiating UV ray to the upper part of the transparent panel, thereby forming a SOG film.
  • the first and second wafers were cleaned and surface-treated, and bonded to each other through the same processes as the example 1.
  • FIGS. 10 and 11 are photographs illustrating a wafer surface before and after cleaning and surface treatment according to the comparison example 1.
  • First (RMA: about 1 nm) and second wafers of 8 inches were seated on a chuck of process chamber of an A type atmospheric pressure plasma device having power of 1 ,00OW.
  • the first and second wafers may be planarized by CMP (Chemical Mechanical Polishing) process if it is needed. Fingerprints were arbitrarily formed on a bonding surface of the first wafer for evaluating cleanness of the wafer in the step of cleaning and surface-treating according to the comparison example 1.
  • CMP Chemical Mechanical Polishing
  • the first and second wafers were cleaned and surface-treated by supplying atmospheric pressure plasma to the bonding surfaces of the wafers, where the atmospheric pressure plasma was formed by supplying nitrogen in 300 liter/min under atmospheric pressure. In this time, water vapor was not supplied, differently from the example 1. Then, the first and second wafers were sequentially transferred to a vacuum chamber and aligned, then pressurized, bonded and annealed.
  • fingerprints were formed on the bonding surface of the first wafer before the cleaning and surface-treatment. Also, as shown in FIG. 11 , fingerprints existed on the bonding surface of the first wafer even after the cleaning and surface-treatment was completed. Accordingly, it was confirmed that the cleaning and surface-treatment was not completely performed for the bonding surface of the first wafer in the step of cleaning and surface-treating according to the comparison example 1.
  • FIG. 12 is a photograph illustrating a wafer surface after cleaning according to the comparison example 2.
  • First (RMA: about 1 nm) and second wafers of 8 inches were seated on a vacuum chuck of a process chamber.
  • the first and second wafers may be planarized by CMP
  • Fingerprints were arbitrarily formed on a bonding surface of the first wafer for evaluating cleanness of the wafer in the step of cleaning process according to the comparison example 2.
  • the first and second wafers were cleaned by supplying water vapor formed by heating a deionized water to the bonding surfaces of the wafers. In this time, the atmospheric pressure plasma was not supplied, differently from the example 1.
  • the water vapor was supplied together with nitrogen, and the feed amount of the nitrogen was 5 liter/min.
  • the bonding surfaces of the first and second wafers were dried by a spin drying process after the cleaning process was completed. Then, the first and second wafers were transferred to a separate process chamber, and sequentially surface-treated by atmospheric pressure plasma. In addition, the first and second wafers were transferred to a separate vacuum chamber and aligned, then pressurized, bonded and annealed.
  • the wafer cleaning method and wafer bonding method using the same can be ustilized for improving a yield of cleaning process and bonding properly of the semiconductor wafer.

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Abstract

La présente invention concerne un procédé de nettoyage et de liaison de tranche pouvant améliorer le rendement du processus de nettoyage et la propriété de liaison lors de la liaison de la tranche nettoyée par nettoyage de la tranche au moyen d'un plasma sous pression atmosphérique et d'une solution détergente. Le procédé de nettoyage de tranche comprend les étapes consistant à placer dans une chambre de procédé une tranche dont la surface de liaison est orientée vers le haut, à nettoyer et appliquer un traitement de surface à la surface de liaison de la tranche, et à extraire la tranche de la chambre de procédé. Le procédé de liaison de la tranche comprend les étapes consistant à : placer dans une première tranche de procédé une première tranche dont la surface de liaison est orientée vers le haut ; nettoyer et appliquer un traitement de surface à la surface de liaison de la première tranche en appliquant un plasma sous pression atmosphérique et une solution détergente à la surface de liaison de la première tranche ; extraire la première tranche de la première chambre de procédé et placer dans une seconde chambre de procédé la première tranche ; placer dans une troisième chambre de procédé une seconde tranche dont la surface de liaison est orientée vers le haut ; nettoyer et appliquer un traitement de surface à la seconde tranche en appliquant un plasma à pression atmosphérique et une solution détergente à la surface de liaison de la seconde tranche ; extraire la seconde tranche de la troisième chambre de procédé et placer dans la seconde chambre de procédé la seconde tranche dont la surface de liaison est orientée vers la surface de liaison de la première tranche et lier les surfaces de liaison des première et seconde tranches l'une à l'autre.
PCT/KR2007/005446 2007-06-01 2007-10-31 Procédé de nettoyage et procédé de liaison de tranche l'utilisant WO2008146994A1 (fr)

Priority Applications (2)

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JP2010510186A JP2010528484A (ja) 2007-06-01 2007-10-31 ウェーハ洗浄方法及びそれを利用したウェーハボンディング方法
US12/602,285 US8278186B2 (en) 2007-06-01 2007-10-31 Wafer cleaning method and wafer bonding method using the same

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KR20070053932 2007-06-01
KR10-2007-0053932 2007-06-01
KR1020070097037A KR100936778B1 (ko) 2007-06-01 2007-09-21 웨이퍼 본딩방법
KR1020070097038A KR100893182B1 (ko) 2007-06-01 2007-09-21 웨이퍼 세정방법
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011079170A2 (fr) * 2009-12-23 2011-06-30 Suss Microtec, Inc., Séparateur à glissement thermique automatisé

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Publication number Priority date Publication date Assignee Title
US5529631A (en) * 1989-10-30 1996-06-25 Bridgestone Corporation Apparatus for the continuous surface treatment of sheet material
JPH09167757A (ja) * 1995-12-14 1997-06-24 Seiko Epson Corp プラズマ処理方法及びその装置
KR20030004527A (ko) * 2001-07-05 2003-01-15 사단법인 고등기술연구원 연구조합 건식 세정/에싱 방법 및 장치

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5529631A (en) * 1989-10-30 1996-06-25 Bridgestone Corporation Apparatus for the continuous surface treatment of sheet material
JPH09167757A (ja) * 1995-12-14 1997-06-24 Seiko Epson Corp プラズマ処理方法及びその装置
KR20030004527A (ko) * 2001-07-05 2003-01-15 사단법인 고등기술연구원 연구조합 건식 세정/에싱 방법 및 장치

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011079170A2 (fr) * 2009-12-23 2011-06-30 Suss Microtec, Inc., Séparateur à glissement thermique automatisé
WO2011079170A3 (fr) * 2009-12-23 2011-10-27 Suss Microtec, Inc., Séparateur à glissement thermique automatisé
US8343300B2 (en) 2009-12-23 2013-01-01 Suss Microtec Lithography, Gmbh Automated thermal slide debonder

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