+

WO2008143017A1 - レジスト除去方法及びその装置 - Google Patents

レジスト除去方法及びその装置 Download PDF

Info

Publication number
WO2008143017A1
WO2008143017A1 PCT/JP2008/058577 JP2008058577W WO2008143017A1 WO 2008143017 A1 WO2008143017 A1 WO 2008143017A1 JP 2008058577 W JP2008058577 W JP 2008058577W WO 2008143017 A1 WO2008143017 A1 WO 2008143017A1
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
ozone
resist
susceptor
chamber
Prior art date
Application number
PCT/JP2008/058577
Other languages
English (en)
French (fr)
Inventor
Toshinori Miura
Original Assignee
Meidensha Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Meidensha Corporation filed Critical Meidensha Corporation
Priority to CN2008800170471A priority Critical patent/CN101715601B/zh
Priority to US12/598,501 priority patent/US8187389B2/en
Priority to KR1020097023735A priority patent/KR101160258B1/ko
Publication of WO2008143017A1 publication Critical patent/WO2008143017A1/ja

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • H01L21/31138—Etching organic layers by chemical means by dry-etching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/423—Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S134/00—Cleaning and liquid contact with solids
    • Y10S134/902—Semiconductor wafer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/906—Cleaning of wafer as interim step

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Drying Of Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

　レジスト除去装置１はポッピング現象の発生を防止させながら基板のレジストを除去すると共にレジストを除去する際のエネルギーコストの低減と装置構成の単純化させる。レジスト除去装置１は基板１６（例えば高ドーズイオン注入レジストを有するもの）を格納するチャンバ２を備え、このチャンバ２には大気圧よりも低圧のもとでオゾンガスと不飽和炭化水素ガスと水蒸気とが供給される。前記オゾンガスとしてはオゾン含有ガスを蒸気圧の差に基づいてオゾンのみを液化分離した後に再び気化して得られる超高濃度オゾンガスが挙げられる。前記処理した基板１６には洗浄するために超純水を供給するとよい。チャンバ２は基板１６を保持するサセプタ１５を備える。サセプタ１５はその温度が１００°C以下となるように加熱される。前記サセプタを加熱する手段としては例えば赤外光を発する光源４が挙げられる。
PCT/JP2008/058577 2007-05-23 2008-05-08 レジスト除去方法及びその装置 WO2008143017A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN2008800170471A CN101715601B (zh) 2007-05-23 2008-05-08 去除抗蚀剂的方法和装置
US12/598,501 US8187389B2 (en) 2007-05-23 2008-05-08 Method of removing resist and apparatus therefor
KR1020097023735A KR101160258B1 (ko) 2007-05-23 2008-05-08 레지스트 제거방법과 그를 위한 장치

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007137288A JP4952375B2 (ja) 2007-05-23 2007-05-23 レジスト除去方法及びその装置
JP2007-137288 2007-05-23

Publications (1)

Publication Number Publication Date
WO2008143017A1 true WO2008143017A1 (ja) 2008-11-27

Family

ID=40031729

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/058577 WO2008143017A1 (ja) 2007-05-23 2008-05-08 レジスト除去方法及びその装置

Country Status (6)

Country Link
US (1) US8187389B2 (ja)
JP (1) JP4952375B2 (ja)
KR (1) KR101160258B1 (ja)
CN (1) CN101715601B (ja)
TW (1) TW200913007A (ja)
WO (1) WO2008143017A1 (ja)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009072402A1 (ja) * 2007-12-04 2009-06-11 Meidensha Corporation レジスト除去方法及びその装置
JP5581648B2 (ja) * 2009-10-19 2014-09-03 株式会社明電舎 炭素汚染除去処理方法及び炭素汚染除去処理装置
JP5678671B2 (ja) * 2011-01-07 2015-03-04 富士通セミコンダクター株式会社 クリーニング方法およびクリーニング装置
JP2012243852A (ja) * 2011-05-17 2012-12-10 Renesas Electronics Corp 露光装置、露光方法、半導体装置の製造方法、検査装置、検査方法及びクリーニング方法
US9123507B2 (en) 2012-03-20 2015-09-01 Mapper Lithography Ip B.V. Arrangement and method for transporting radicals
US9522844B2 (en) * 2014-09-03 2016-12-20 Shenzhen China Star Optoelectronics Technology Co., Ltd. Low temperature poly-silicon thin film preparation apparatus and method for preparing the same
WO2016143897A1 (ja) 2015-03-12 2016-09-15 株式会社明電舎 樹脂の改質方法及び改質装置
WO2016186096A1 (ja) 2015-05-21 2016-11-24 株式会社明電舎 樹脂の改質方法及び改質装置
DE102015209529A1 (de) * 2015-05-22 2016-11-24 BSH Hausgeräte GmbH Haushaltsgerät
US9981293B2 (en) 2016-04-21 2018-05-29 Mapper Lithography Ip B.V. Method and system for the removal and/or avoidance of contamination in charged particle beam systems
JP6985803B2 (ja) * 2017-03-01 2021-12-22 株式会社Ｓｃｒｅｅｎホールディングス 露光装置、基板処理装置、基板の露光方法および基板処理方法
JP7092478B2 (ja) * 2017-09-15 2022-06-28 株式会社Ｓｃｒｅｅｎホールディングス レジスト除去方法およびレジスト除去装置
KR102099433B1 (ko) 2018-08-29 2020-04-10 세메스 주식회사 기판 처리 방법 및 기판 처리 장치
KR102037902B1 (ko) * 2018-11-26 2019-10-29 세메스 주식회사 기판 처리 장치 및 방법
CN111333034A (zh) * 2020-03-06 2020-06-26 费勉仪器科技（上海）有限公司 一种液化型超高纯臭氧制备装置

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11219926A (ja) * 1997-11-20 1999-08-10 Interuniv Micro Electronica Centrum Vzw 半導体基板表面からの有機汚染物の除去方法
JP2001223206A (ja) * 1999-12-03 2001-08-17 Mitsubishi Electric Corp 基板処理方法および装置
JP2003188137A (ja) * 2001-12-14 2003-07-04 Dainippon Screen Mfg Co Ltd 基板処理装置
JP2003273059A (ja) * 2002-03-19 2003-09-26 Mitsubishi Electric Corp 基板処理方法およびその装置
JP2003330206A (ja) * 2001-10-23 2003-11-19 Ums:Kk 有機被膜の除去方法および除去装置
JP2006156919A (ja) * 2004-12-01 2006-06-15 Purex:Kk 有機被膜の除去方法及び除去剤

Family Cites Families (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6481318A (en) 1987-09-24 1989-03-27 Toshiba Corp Ashing of organic polymer film and device therefor
JPH04150013A (ja) 1990-10-15 1992-05-22 Hitachi Ltd レジストアッシング方法
JP3058979B2 (ja) 1991-02-22 2000-07-04 宮城沖電気株式会社 Ａｌ合金のドライエッチング後の腐蝕防止方法
JPH0869896A (ja) * 1994-08-30 1996-03-12 Sony Corp プラズマ処理装置およびプラズマ処理方法
JPH08139004A (ja) 1994-11-14 1996-05-31 Sony Corp プラズマ処理装置およびプラズマ処理方法
JPH0927473A (ja) 1995-07-10 1997-01-28 Hitachi Ltd レジスト除去方法およびその装置
EP0867924B1 (en) 1997-02-14 2011-08-31 Imec Method for removing organic contaminants from a semiconductor surface
US6551409B1 (en) 1997-02-14 2003-04-22 Interuniversitair Microelektronica Centrum, Vzw Method for removing organic contaminants from a semiconductor surface
US20020011257A1 (en) 1997-02-14 2002-01-31 Degendt Stefan Method for removing organic contaminants from a semiconductor surface
US7416611B2 (en) * 1997-05-09 2008-08-26 Semitool, Inc. Process and apparatus for treating a workpiece with gases
US20060137723A1 (en) * 1997-05-09 2006-06-29 Bergman Eric J Workpiece processing using ozone gas and solvents
US6231676B1 (en) * 1998-01-27 2001-05-15 Seagate Technology Llc Cleaning process for disc drive components
US6503405B1 (en) * 1999-04-14 2003-01-07 Seagate Technology Llc Surface treatment with ZP process for GMR media
US6634368B1 (en) * 1999-11-12 2003-10-21 Texas Instruments Incorporated Application of ozonated DI water to scrubbers for resist strip and particle removal processes
US20010027023A1 (en) 2000-02-15 2001-10-04 Shigenori Ishihara Organic substance removing methods, methods of producing semiconductor device, and organic substance removing apparatuses
JP2001308078A (ja) 2000-02-15 2001-11-02 Canon Inc 有機物除去方法、半導体装置の製造方法及び有機物除去装置並びにシステム
JP4285885B2 (ja) * 2000-04-20 2009-06-24 独立行政法人産業技術総合研究所 オゾン生成装置
JP3948913B2 (ja) 2001-07-04 2007-07-25 独立行政法人産業技術総合研究所 オゾン生成装置
BR0311827A (pt) 2002-06-07 2005-03-29 Mallinckrodt Baker Inc Composições de limpeza microeletrÈnicas contendo oxidantes e solventes orgânicos
US7374696B2 (en) * 2003-02-14 2008-05-20 Applied Materials, Inc. Method and apparatus for removing a halogen-containing residue
US8580076B2 (en) 2003-05-22 2013-11-12 Lam Research Corporation Plasma apparatus, gas distribution assembly for a plasma apparatus and processes therewith
JP4361056B2 (ja) * 2003-12-17 2009-11-11 東京エレクトロン株式会社 オゾン処理方法及びオゾン処理装置
US20050279453A1 (en) * 2004-06-17 2005-12-22 Uvtech Systems, Inc. System and methods for surface cleaning
US20070054492A1 (en) * 2004-06-17 2007-03-08 Elliott David J Photoreactive removal of ion implanted resist
JP4150013B2 (ja) * 2005-03-31 2008-09-17 Ｔｄｋ株式会社 トンネル効果素子
JP4408830B2 (ja) 2005-04-11 2010-02-03 株式会社ルネサステクノロジ 半導体装置の製造方法
WO2007019287A2 (en) * 2005-08-04 2007-02-15 Uvtech Systems, Inc. Photoreactive removal of ion implanted resist
US7655571B2 (en) * 2006-10-26 2010-02-02 Applied Materials, Inc. Integrated method and apparatus for efficient removal of halogen residues from etched substrates
US7846845B2 (en) * 2006-10-26 2010-12-07 Applied Materials, Inc. Integrated method for removal of halogen residues from etched substrates in a processing system

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11219926A (ja) * 1997-11-20 1999-08-10 Interuniv Micro Electronica Centrum Vzw 半導体基板表面からの有機汚染物の除去方法
JP2001223206A (ja) * 1999-12-03 2001-08-17 Mitsubishi Electric Corp 基板処理方法および装置
JP2003330206A (ja) * 2001-10-23 2003-11-19 Ums:Kk 有機被膜の除去方法および除去装置
JP2003188137A (ja) * 2001-12-14 2003-07-04 Dainippon Screen Mfg Co Ltd 基板処理装置
JP2003273059A (ja) * 2002-03-19 2003-09-26 Mitsubishi Electric Corp 基板処理方法およびその装置
JP2006156919A (ja) * 2004-12-01 2006-06-15 Purex:Kk 有機被膜の除去方法及び除去剤

Also Published As

Publication number Publication date
TWI369720B (ja) 2012-08-01
CN101715601B (zh) 2013-06-12
JP2008294168A (ja) 2008-12-04
CN101715601A (zh) 2010-05-26
TW200913007A (en) 2009-03-16
KR101160258B1 (ko) 2012-06-26
US8187389B2 (en) 2012-05-29
KR20100002280A (ko) 2010-01-06
JP4952375B2 (ja) 2012-06-13
US20100139708A1 (en) 2010-06-10

Similar Documents

Publication Publication Date Title
WO2008143017A1 (ja) レジスト除去方法及びその装置
WO2009072402A1 (ja) レジスト除去方法及びその装置
US8771429B2 (en) Supercritical drying method for semiconductor substrate and supercritical drying apparatus
TW200746289A (en) Post-etch treatment system for removing residue on a substrate
TW200727325A (en) Method of treating a gas stream
JP4968028B2 (ja) レジスト除去装置
WO2013052509A3 (en) Remote plasma burn-in
WO2007056369A3 (en) Batch photoresist dry strip and ash system and process
TW200802589A (en) Apparatus for cleaning exhaust part and vacuum pump of reaction chamber for semiconductor device and LCD manufacturing equipment
ATE466637T1 (de) Verfahren und vorrichtung zur gewinnung von kohlendioxid aus dämpfen
TW200644123A (en) Methods of removing resist from substrates in resist stripping chambers
WO2007027350A3 (en) Method of removing surface deposits and passivating interior surfaces of the interior of a chemical vapour deposition (cvd) chamber
WO2012018375A3 (en) Plasma mediated ashing processes
WO2006104819A3 (en) A method and system for removing an oxide from a substrate
DE502006004463D1 (de) Vorrichtung und verfahren zur kontinuierlichen gasphasenabscheidung unter atmosphärendruck und deren verwendung
US20150279693A1 (en) Method and system for delivering hydrogen peroxide to a semiconductor processing chamber
DE112006002434A5 (de) Verfahren und Vorrichtung zum Aufbereiten von Kohlenwasserstoffhaltigen Produkten
WO2008146584A1 (ja) 高濃度オゾン水製造方法とその装置及び基板表面処理方法とその装置
EP1012679A4 (en) IMPROVED POLLUTION DETERGENT
WO2009104917A3 (en) Apparatus and method for processing substrate
JP2007285196A (ja) ガス燃料機関装置
WO2010038972A3 (ko) 소스가스 공급장치
JP2012129239A (ja) エッチング装置及び方法
TW200723352A (en) Medium pressure plasma system for removal of surface layers without substrate loss
Köhler et al. Experimental investigations on a plasma assisted in situ restoration process for sidewall damaged ultra low-k dielectrics

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 200880017047.1

Country of ref document: CN

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 08752463

Country of ref document: EP

Kind code of ref document: A1

WWE Wipo information: entry into national phase

Ref document number: 12598501

Country of ref document: US

ENP Entry into the national phase

Ref document number: 20097023735

Country of ref document: KR

Kind code of ref document: A

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 08752463

Country of ref document: EP

Kind code of ref document: A1

点击 这是indexloc提供的php浏览器服务，不要输入任何密码和下载