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WO2008142759A1 - アーク放電装置 - Google Patents

アーク放電装置 Download PDF

Info

Publication number
WO2008142759A1
WO2008142759A1 PCT/JP2007/060251 JP2007060251W WO2008142759A1 WO 2008142759 A1 WO2008142759 A1 WO 2008142759A1 JP 2007060251 W JP2007060251 W JP 2007060251W WO 2008142759 A1 WO2008142759 A1 WO 2008142759A1
Authority
WO
WIPO (PCT)
Prior art keywords
module
semiconductor
discharge device
arc discharge
plane
Prior art date
Application number
PCT/JP2007/060251
Other languages
English (en)
French (fr)
Inventor
Osamu Soda
Yuji Ohnishi
Kazunori Inami
Toshio Uchida
Original Assignee
Sansha Electric Manufacturing Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sansha Electric Manufacturing Co., Ltd. filed Critical Sansha Electric Manufacturing Co., Ltd.
Priority to JP2009515028A priority Critical patent/JP5240863B2/ja
Priority to PCT/JP2007/060251 priority patent/WO2008142759A1/ja
Priority to EP07743686.3A priority patent/EP2149902B1/en
Priority to KR1020097014564A priority patent/KR101081622B1/ko
Priority to SI200732088T priority patent/SI2149902T1/sl
Priority to CN2007800511876A priority patent/CN101681905B/zh
Priority to KR1020117019494A priority patent/KR101081724B1/ko
Priority to US12/451,155 priority patent/US8223496B2/en
Publication of WO2008142759A1 publication Critical patent/WO2008142759A1/ja

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group subclass H10D
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K7/00—Constructional details common to different types of electric apparatus
    • H05K7/20—Modifications to facilitate cooling, ventilating, or heating
    • H05K7/2089—Modifications to facilitate cooling, ventilating, or heating for power electronics, e.g. for inverters for controlling motor
    • H05K7/209—Heat transfer by conduction from internal heat source to heat radiating structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/10—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices having separate containers
    • H01L25/11—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices having separate containers the devices being of a type provided for in subclass H10D
    • H01L25/115—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices having separate containers the devices being of a type provided for in subclass H10D the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/18—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of the types provided for in two or more different main groups of the same subclass of H10B, H10D, H10F, H10H, H10K or H10N
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of AC power input into DC power output; Conversion of DC power input into AC power output
    • H02M7/003—Constructional details, e.g. physical layout, assembly, wiring or busbar connections

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Thermal Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Inverter Devices (AREA)
  • Cooling Or The Like Of Electrical Apparatus (AREA)
  • Arc Welding Control (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

　アーク放電装置に備えられた小型軽量の電力用半導体モジュール内により多くの半導体素子を内蔵する。 　アーク放電装置の電源装置が、半導体モジュール１及び半導体モジュール１に取り付けられる放熱器からなる。半導体モジュール１は、モジュール筐体２と、モジュール筐体２によって保持される共通ユニット３ａ～３ｃからなる。共通ユニット３ａ～３ｃは、半導体素子５４が配設された回路面及びその反対側の放熱面を有するセラミック基板５０と、上記放熱面を露出させ回路面を耐熱性樹脂によって封止するパッケージ３５とを有する。放電器は、モジュール筐体２に取り付けられることにより、共通ユニット３ａ～３ｃの全ての放熱面に当接する。この様な構成により、小型軽量の電力用半導体モジュール内に多くの半導体素子を内蔵することができる。
PCT/JP2007/060251 2007-05-18 2007-05-18 アーク放電装置 WO2008142759A1 (ja)

Priority Applications (8)

Application Number Priority Date Filing Date Title
JP2009515028A JP5240863B2 (ja) 2007-05-18 2007-05-18 電力用半導体モジュール及びアーク放電装置
PCT/JP2007/060251 WO2008142759A1 (ja) 2007-05-18 2007-05-18 アーク放電装置
EP07743686.3A EP2149902B1 (en) 2007-05-18 2007-05-18 Power semiconductor module and arc discharge device using the same
KR1020097014564A KR101081622B1 (ko) 2007-05-18 2007-05-18 아크방전장치
SI200732088T SI2149902T1 (sl) 2007-05-18 2007-05-18 Močnostni polprevodniški moduli in naprava za električni oblok, ki le-tega uporablja
CN2007800511876A CN101681905B (zh) 2007-05-18 2007-05-18 电弧放电装置
KR1020117019494A KR101081724B1 (ko) 2007-05-18 2007-05-18 아크방전장치
US12/451,155 US8223496B2 (en) 2007-05-18 2007-05-18 Arc discharge device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2007/060251 WO2008142759A1 (ja) 2007-05-18 2007-05-18 アーク放電装置

Publications (1)

Publication Number Publication Date
WO2008142759A1 true WO2008142759A1 (ja) 2008-11-27

Family

ID=40031486

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2007/060251 WO2008142759A1 (ja) 2007-05-18 2007-05-18 アーク放電装置

Country Status (7)

Country Link
US (1) US8223496B2 (ja)
EP (1) EP2149902B1 (ja)
JP (1) JP5240863B2 (ja)
KR (2) KR101081622B1 (ja)
CN (1) CN101681905B (ja)
SI (1) SI2149902T1 (ja)
WO (1) WO2008142759A1 (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102024803A (zh) * 2009-09-18 2011-04-20 株式会社东芝 功率模块
US8637971B2 (en) 2012-04-20 2014-01-28 Mitsubishi Electric Corporation Semiconductor device and method of manufacturing semiconductor device

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8289514B2 (en) 2008-03-05 2012-10-16 Aggredyne, Inc. Systems for measuring properties of a physiological fluid suspension
EP2833405A4 (en) 2012-03-28 2016-01-13 Fuji Electric Co Ltd SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD THEREOF
CN104160504B (zh) 2012-03-28 2017-05-17 富士电机株式会社 半导体装置和半导体装置的制造方法
EP2804212A4 (en) * 2012-03-28 2015-12-09 Fuji Electric Co Ltd Semiconductor device
JPWO2014034411A1 (ja) * 2012-08-27 2016-08-08 三菱電機株式会社 電力用半導体装置
CN105229785B (zh) * 2013-04-24 2018-01-16 富士电机株式会社 功率半导体模块及其制造方法、电力变换器
JP2016518030A (ja) * 2013-04-29 2016-06-20 アーベーベー・テクノロジー・アーゲー パワー半導体装置のモジュール配列
JP6171586B2 (ja) 2013-06-04 2017-08-02 富士電機株式会社 半導体装置
CN105742252B (zh) * 2014-12-09 2019-05-07 台达电子工业股份有限公司 一种功率模块及其制造方法
US9663096B2 (en) 2015-02-20 2017-05-30 Ford Global Technologies, Llc Methods and systems for mitigating fuel injector leak
US20210134510A1 (en) * 2019-10-31 2021-05-06 Analog Devices International Unlimited Company Electronic device
WO2022066250A1 (en) * 2020-09-24 2022-03-31 Hrl Laboratories, Llc Wafer-level integrated micro-structured heat spreaders
US20230238310A1 (en) * 2020-10-12 2023-07-27 Mitsubishi Electric Corporation Semiconductor module

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Publication number Priority date Publication date Assignee Title
JPH0550239A (ja) * 1991-08-23 1993-03-02 Daihen Corp 交流アーク溶接用電源装置
JPH09237869A (ja) 1996-02-29 1997-09-09 Hitachi Ltd 樹脂封止型パワーモジュール装置及びその製造方法
JPH10146068A (ja) * 1996-11-05 1998-05-29 Sansha Electric Mfg Co Ltd 直流アークスタート補助回路
JP2001036005A (ja) * 1999-07-23 2001-02-09 Fuji Electric Co Ltd 半導体装置
JP2006332291A (ja) * 2005-05-25 2006-12-07 Keihin Corp パワードライブユニット

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CA2255441C (en) * 1997-12-08 2003-08-05 Hiroki Sekiya Package for semiconductor power device and method for assembling the same
JP3919398B2 (ja) * 1999-10-27 2007-05-23 三菱電機株式会社 半導体モジュール
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JP4151209B2 (ja) * 2000-08-29 2008-09-17 三菱電機株式会社 電力用半導体装置
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Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0550239A (ja) * 1991-08-23 1993-03-02 Daihen Corp 交流アーク溶接用電源装置
JPH09237869A (ja) 1996-02-29 1997-09-09 Hitachi Ltd 樹脂封止型パワーモジュール装置及びその製造方法
JPH10146068A (ja) * 1996-11-05 1998-05-29 Sansha Electric Mfg Co Ltd 直流アークスタート補助回路
JP2001036005A (ja) * 1999-07-23 2001-02-09 Fuji Electric Co Ltd 半導体装置
JP2006332291A (ja) * 2005-05-25 2006-12-07 Keihin Corp パワードライブユニット

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102024803A (zh) * 2009-09-18 2011-04-20 株式会社东芝 功率模块
CN102024803B (zh) * 2009-09-18 2013-06-19 株式会社东芝 功率模块
US8637971B2 (en) 2012-04-20 2014-01-28 Mitsubishi Electric Corporation Semiconductor device and method of manufacturing semiconductor device

Also Published As

Publication number Publication date
CN101681905A (zh) 2010-03-24
KR101081724B1 (ko) 2011-11-08
EP2149902B1 (en) 2018-11-28
KR20090092318A (ko) 2009-08-31
CN101681905B (zh) 2012-06-13
EP2149902A1 (en) 2010-02-03
EP2149902A4 (en) 2011-11-09
JP5240863B2 (ja) 2013-07-17
US8223496B2 (en) 2012-07-17
SI2149902T1 (sl) 2019-03-29
KR20110098866A (ko) 2011-09-01
JPWO2008142759A1 (ja) 2010-08-05
US20100128441A1 (en) 2010-05-27
KR101081622B1 (ko) 2011-11-10

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