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WO2008031370A1 - Module à semi-conducteur de puissance pour répartir l'énergie, présentant une protection anti-explosion - Google Patents

Module à semi-conducteur de puissance pour répartir l'énergie, présentant une protection anti-explosion Download PDF

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Publication number
WO2008031370A1
WO2008031370A1 PCT/DE2006/001638 DE2006001638W WO2008031370A1 WO 2008031370 A1 WO2008031370 A1 WO 2008031370A1 DE 2006001638 W DE2006001638 W DE 2006001638W WO 2008031370 A1 WO2008031370 A1 WO 2008031370A1
Authority
WO
WIPO (PCT)
Prior art keywords
power semiconductor
power
semiconductor module
terminal
housing
Prior art date
Application number
PCT/DE2006/001638
Other languages
German (de)
English (en)
Inventor
Markus Billmann
Jörg DORN
Werner Hartmann
Original Assignee
Siemens Aktiengesellschaft
Fraunhofer Gesellschaft Zur Förderung Der Angewandten Forschung E. V.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Aktiengesellschaft, Fraunhofer Gesellschaft Zur Förderung Der Angewandten Forschung E. V. filed Critical Siemens Aktiengesellschaft
Priority to DE112006004135T priority Critical patent/DE112006004135A5/de
Priority to PCT/DE2006/001638 priority patent/WO2008031370A1/fr
Publication of WO2008031370A1 publication Critical patent/WO2008031370A1/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/16—Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
    • H01L23/18—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device
    • H01L23/24—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device solid or gel at the normal operating temperature of the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group subclass H10D
    • H01L25/072—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group subclass H10D the devices being arranged next to each other
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of AC power input into DC power output; Conversion of DC power input into AC power output
    • H02M7/003—Constructional details, e.g. physical layout, assembly, wiring or busbar connections
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of AC power input into DC power output; Conversion of DC power input into AC power output
    • H02M7/42—Conversion of DC power input into AC power output without possibility of reversal
    • H02M7/44—Conversion of DC power input into AC power output without possibility of reversal by static converters
    • H02M7/48—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/483—Converters with outputs that each can have more than two voltages levels
    • H02M7/4835—Converters with outputs that each can have more than two voltages levels comprising two or more cells, each including a switchable capacitor, the capacitors having a nominal charge voltage which corresponds to a given fraction of the input voltage, and the capacitors being selectively connected in series to determine the instantaneous output voltage
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/18—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of the types provided for in two or more different main groups of the same subclass of H10B, H10D, H10F, H10H, H10K or H10N
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]

Definitions

  • the invention relates to a power semiconductor module having at least one power semiconductor and terminals for connecting the power semiconductor module.
  • the invention further relates to a power converter valve branch of a series circuit of such power semiconductor modules and a power converter from such power converter valve branches.
  • a power semiconductor module of the aforementioned type is already known from DE 303 21 33. There, a pressure-contacted power semiconductor is described, which is jammed between two electrodes.
  • the power semiconductor has a hollow-cylindrical ceramic component filled with silicon rubber as an explosion-proof element.
  • silicon rubber as an explosion-proof element.
  • the semiconductor material such as silicon
  • the semiconductor material locally becomes so hot that it vaporizes. This in turn leads to a pressure increase in the ceramic housing with possibly locally hot spots in the interior of the ceramic. In the case of extreme loads, this can lead to a bursting of the ceramic housing.
  • the hollow cylindrical housing and the silicone rubber therefore serve to absorb the forces occurring in the explosion of the semiconductor.
  • the prior art power semiconductor module has the disadvantage that the hollow-cylindrical component with the introduced filler is an integral part of the power semiconductor itself and therefore has to be manufactured together with the power semiconductor.
  • the object of the invention is therefore to provide a power semiconductor module of the type mentioned, in which a far-reaching explosion protection is ensured even when an arc occurs.
  • the invention solves this problem by a housing which is filled with a temperature-resistant filler, wherein each power semiconductor and each AnSchlussklemme are arranged in the housing and the filler for damping a through
  • a housing in which all components of the power semiconductor electronics are arranged.
  • the housing can be produced independently of the power semiconductor or semiconductors.
  • the power semiconductor electronics include, for example, the power semiconductors, their opposing freewheeling diodes and the control electronics for igniting the power semiconductors.
  • the housing has sufficient strength to effectively absorb the explosion forces that occur in the event of a fault.
  • the housing is supported by the temperature- and / or heat-resistant filling of the housing in the form of the temperature-resistant filler.
  • the filler supports the housing in its protective effect even when an arc occurs, so that even when using bonded power semiconductors, an effective explosion protection is provided. All components are arranged inside the housing.
  • the power semiconductor module according to the invention is provided in particular for use in the field of energy transmission and power distribution.
  • the temperature-resistant filler is a plastically-elastically deformable polymer. Due to the plastic elastic properties of the elastomer, the explosive forces can be safely absorbed.
  • the housing is filled with the temperature-resistant filler.
  • the components are initially placed in the housing during manufacture. Subsequently, the interior of the housing is filled with foam.
  • foaming we introduced the filler as a foam in the housing and then cured. In this way it is ensured that the temperature-resistant filler is everywhere between the inner wall of the housing and the remaining components of the power semiconductor module. Only terminals are led out with their free ends from the housing and from the filler. Deviating from this, foam moldings are introduced into the housing in another embodiment.
  • One such power semiconductor module is removable and thus possibly repairable.
  • the temperature-resistant filler is a fine-pored foam. It has been found that a temperature-resistant, fine-pored foam such as polyurethane has outstanding plastic-elastic properties, so that a sufficient explosion protection is given. Here, the fine closed pores of the foam supported the plastic-elastic properties.
  • the temperature-resistant filler is an open-pore foam. Open-pored foams exhibit in the
  • the one or more power semiconductors are at least partially so-called bonded power semiconductors.
  • Bonded power semiconductors are inexpensive compared to pressure-contacted power semiconductors. As a rule, they consist of a multiplicity of semiconductor chips connected in parallel to one another and connected to one another via wires. In the event of a fault, however, the high currents cause the connections to break up or melt, with simultaneous arcing. However, the effects of the arc are reliably absorbed by the heat-resistant filler and the housing, so that damage to components arranged outside the housing of the power semiconductor module is largely avoided.
  • the one or more power semiconductors are at least partially turn-off power semiconductors.
  • Switchable power semiconductors can be actively transferred, so by control pulses, both from a blocking position to a through position and from a passage position to a blocking position, so that the possibilities of control for the power semiconductor module are significantly increased.
  • Switchable power semiconductors are, for example, IGBTs, IGCTs, GTOs or the like.
  • each power semiconductor which can be switched off is connected in parallel with an opposite freewheeling diode.
  • the power semiconductor module comprises a first connection terminal, a second connection terminal, an energy store arranged outside the housing and a power semiconductor branch connected in parallel to the energy store, wherein the power semiconductor branch has two power semiconductors connected in series and each Power semiconductor an opposite freewheeling diode is connected in parallel, wherein the connection point of the emitter of a first power semiconductor of the power semiconductor branch and the anode of the first power semiconductor associated opposing freewheeling diode form the first terminal and the connection point of the power semiconductor of the power semiconductor branch or freewheeling diodes, the second terminal.
  • the power semiconductor module comprises a so-called Marquardt circuit, which is already known from other publications. Such power semiconductor modules are for
  • a converter valve branch suitable which consists of a series circuit of power semiconductor modules.
  • the power converter valve branch is then part of a Stromrich- ters, which has a bridge circuit of converter valve branches.
  • the power semiconductor module has a first connection terminal, a second connection terminal, an energy store and a power semiconductor branch having two series-connected power semiconductors connected in parallel to the energy store, wherein each power semiconductor is connected in parallel with an opposite freewheeling diode and the connection point of the collector of a first power semiconductor Power semiconductor branch and the cathode of the first power semiconductor associated opposing freewheeling diode, the first terminal and the connection point of the power semiconductor of the power semiconductor branch and the freewheeling diode form the second Anschlußklem- me.
  • the energy store is expediently arranged outside the housing.
  • the housing is advantageously made of metal or plastic, in particular reinforced with fibers and / or fillers plastics. In principle, however, any suitable material can be used to manufacture the housing. What is essential here is that the housing has the necessary strength to be able to withstand the explosion forces in the event of a fault as far as possible without damage.
  • pressure relief openings for the targeted discharge of hot gases and / or particles are provided.
  • the pressure relief openings are in the. Housing provided at locations which are remote from adjacent components.
  • the energy of the filler which can be absorbed by plastically elastic deformation corresponds to the expected maximum arc energy.
  • the maximum arc energy results, for example, from that in an energy store such as a
  • Capacitor stored energy The deformation energy of the filler, that is to say the energy which can be absorbed by plastically elastic deformation, can be determined by experimental experiments. The deformation energy in turn depends on the material properties.
  • FIG. 1 shows an embodiment of power converter branches according to the invention
  • FIG. 2 shows a replacement image representation of an exemplary embodiment of the power semiconductor module according to the invention
  • FIG. 3 shows a replacement image representation of a further exemplary embodiment of the power semiconductor module according to the invention
  • FIG. 4 shows an embodiment of the invention
  • FIG. 1 shows an exemplary embodiment of converter branches 1 according to the invention, each consisting of a series connection of power semiconductor modules 2.
  • the power converter valve branches 1 are arranged in series with each other.
  • the number of power semiconductor modules 2 within a power converter valve branch 1 depends on the particular application, in particular according to the required voltages. The number may therefore vary between a few tens to several hundred power semiconductor modules 2.
  • an AC voltage connection 3 is provided, which is provided for connection to a phase of an AC voltage network.
  • Power converter valve branch 1 a DC voltage connection 4 is provided.
  • each power converter valve branch 1 is arranged between an AC voltage terminal 3 and a DC voltage terminal 4.
  • An exemplary embodiment of a power converter according to the invention would therefore be, for example, six power converter valve branches connected in a bridge circuit, which is known as such, in the case of a three-phase alternating current network to be connected. This may be a so-called six-pulse bridge circuit but also a twelve-pulse bridge circuit.
  • each power semiconductor module 2 has an energy 'gie Eatin in the form of a capacitor. 5
  • the capacitor 5 is connected in parallel to a power semiconductor branch 6, wherein the power semiconductor branch 6 consists of a series circuit of two so-called IGBTs 7.
  • Each IGBT 7 is a freewheeling diode 8 connected in opposite directions in parallel.
  • the consisting of the controllable power semiconductors 7 and the opposing diodes 8 component together with the control electronics is hereinafter referred to as power electronics.
  • the power electronics are connected to the capacitor 5 switched in parallel.
  • connection terminal 9 also shows a first connection terminal 9 and a second connection terminal 10, the first connection terminal 9 being connected to the emitter of the controllable power semiconductor 7 and simultaneously to the anode of the opposing diode 8 assigned to it, in other words to its connection point. connected is.
  • the second connection terminal 10 is connected to the connection point of the controllable power semiconductors 7 and to the connection point of the opposing diodes 8. If the controllable power semiconductor 7 arranged between the connection terminals 9 and 10 is in its passage position, the voltage zero drops at the connection terminals 9 and 10. If, however, the said power semiconductor is in its blocking position, the controllable power semiconductor 7 not arranged between the connection terminals 9 and 10, however, in its through position, the voltage applied to the capacitor 5 drops between the connection terminals 9 and 10.
  • FIG. 3 shows an alternative embodiment of the power semiconductor module 2 according to FIG. 2.
  • the first terminal 9 in FIG. 3 is connected to the collector of the turn-off power semiconductor 7 and to the cathode opposite freewheeling diode 8 connected.
  • the second terminal 10 is connected to the connection point of the turn-off power semiconductor 7 and the freewheeling diodes 8.
  • the exemplary embodiments of the Marquardt circuit shown in the figures are equivalent to one another and therefore have the same properties.
  • FIG. 4 shows an exemplary embodiment of the power semiconductor module 2 according to the invention in a schematic representation.
  • the power semiconductor module 2 has a power semiconductor circuit according to FIG. 2 or FIG. 3. In FIG 4, however, only two power semiconductors 7 can be seen.
  • each power semiconductor 7 is a bonded IGBT, thus having its own power semiconductor housing, in which a plurality of semiconductor chips are connected to each other in parallel with each other conductor connections.
  • the opposing freewheeling diodes are also arranged.
  • the power semiconductor module 2 further comprises the said first connection terminal 9 and the said second connection terminal 10, which are designed for the supply and discharge of currents which are driven by a voltage, in particular high voltage.
  • the terminals 9 and 10 and the IGBT 7 are arranged in a housing 11 made of plastic with high mechanical strength.
  • the space between the inner wall of the housing 11 is filled with a temperature-resistant filler 12.
  • the temperature-resistant filler 12 is in the illustrated embodiment of a fine-pored open-cell foam whose flow resistance is large enough to retain the hot gas produced during arcing until its cooling to a few hundred degrees Celsius, so that adjacent structures or modules in their function not be affected.
  • the temperature-resistant foam is able to completely absorb the energy released during the arcing by means of plastic-elastic deformation. The explosive escape of hot gases or particles from the housing 11 is avoided in this way.

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Dispersion Chemistry (AREA)
  • Inverter Devices (AREA)

Abstract

La présente invention a pour objet la mise à disposition d'un module à semi-conducteur de puissance (2) comprenant au moins un semi-conducteur de puissance (7), et des bornes de connexion (9,10) destinées à la connexion du module à semi-conducteur de puissance (2), une protection contre l'explosion largement suffisante étant assurée même lors de l'impact d'un arc lumineux. A cet effet, l'invention a trait à un boîtier (11) qui est rempli d'une substance de remplissage (12) résistant à la température, chaque semi-conducteur de puissance (7) et chaque borne de connexion (9,10) étant disposés dans le boîtier (11) et la substance de remplissage (12) servant à vaporiser une explosion résultant de la formation d'un arc lumineux.
PCT/DE2006/001638 2006-09-14 2006-09-14 Module à semi-conducteur de puissance pour répartir l'énergie, présentant une protection anti-explosion WO2008031370A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
DE112006004135T DE112006004135A5 (de) 2006-09-14 2006-09-14 Leistungshalbleitermodul für die Energieverteilung mit Explosionsschutz
PCT/DE2006/001638 WO2008031370A1 (fr) 2006-09-14 2006-09-14 Module à semi-conducteur de puissance pour répartir l'énergie, présentant une protection anti-explosion

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/DE2006/001638 WO2008031370A1 (fr) 2006-09-14 2006-09-14 Module à semi-conducteur de puissance pour répartir l'énergie, présentant une protection anti-explosion

Publications (1)

Publication Number Publication Date
WO2008031370A1 true WO2008031370A1 (fr) 2008-03-20

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2006/001638 WO2008031370A1 (fr) 2006-09-14 2006-09-14 Module à semi-conducteur de puissance pour répartir l'énergie, présentant une protection anti-explosion

Country Status (2)

Country Link
DE (1) DE112006004135A5 (fr)
WO (1) WO2008031370A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016000762A1 (fr) * 2014-07-01 2016-01-07 Siemens Aktiengesellschaft Attache de serrage comportant un élément de compression

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4162514A (en) * 1976-10-27 1979-07-24 Bbc Brown, Boveri & Company, Limited Arrangement for semiconductor power components
DE3032133A1 (de) * 1979-08-31 1981-03-12 Tokyo Shibaura Denki K.K., Kawasaki, Kanagawa Explosionssichere halbleitervorrichtung.
JPS60177658A (ja) * 1984-02-24 1985-09-11 Fuji Electric Co Ltd 電子回路のパツケ−ジ
JPS61145851A (ja) * 1984-12-20 1986-07-03 Toshiba Corp 半導体モジユ−ル
US5744860A (en) * 1996-02-06 1998-04-28 Asea Brown Boveri Ag Power semiconductor module
EP0845809A2 (fr) * 1996-12-02 1998-06-03 Abb Research Ltd. Module semi-conducteur de puissance
JP2001244386A (ja) * 2000-02-28 2001-09-07 Hitachi Ltd パワー半導体モジュール
US20030042624A1 (en) * 2001-08-28 2003-03-06 Mitsubishi Denki Kabushiki Kaisha Power semiconductor device

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4162514A (en) * 1976-10-27 1979-07-24 Bbc Brown, Boveri & Company, Limited Arrangement for semiconductor power components
DE3032133A1 (de) * 1979-08-31 1981-03-12 Tokyo Shibaura Denki K.K., Kawasaki, Kanagawa Explosionssichere halbleitervorrichtung.
JPS60177658A (ja) * 1984-02-24 1985-09-11 Fuji Electric Co Ltd 電子回路のパツケ−ジ
JPS61145851A (ja) * 1984-12-20 1986-07-03 Toshiba Corp 半導体モジユ−ル
US5744860A (en) * 1996-02-06 1998-04-28 Asea Brown Boveri Ag Power semiconductor module
EP0845809A2 (fr) * 1996-12-02 1998-06-03 Abb Research Ltd. Module semi-conducteur de puissance
JP2001244386A (ja) * 2000-02-28 2001-09-07 Hitachi Ltd パワー半導体モジュール
US20030042624A1 (en) * 2001-08-28 2003-03-06 Mitsubishi Denki Kabushiki Kaisha Power semiconductor device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016000762A1 (fr) * 2014-07-01 2016-01-07 Siemens Aktiengesellschaft Attache de serrage comportant un élément de compression
RU2660397C1 (ru) * 2014-07-01 2018-07-06 Сименс Акциенгезелльшафт Стяжной узел с прижимным элементом
US10103085B2 (en) 2014-07-01 2018-10-16 Siemens Aktiengesellschaft Clamping assembly having a pressure element
KR101921585B1 (ko) 2014-07-01 2018-11-26 지멘스 악티엔게젤샤프트 가압 요소를 갖는 클램핑 조립체

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