WO2008068721A1 - Dispositif de détecteur semi-conducteur, instrument de diagnostic comprenant un tel dispositif et procédé de fabrication d'un tel dispositif - Google Patents
Dispositif de détecteur semi-conducteur, instrument de diagnostic comprenant un tel dispositif et procédé de fabrication d'un tel dispositif Download PDFInfo
- Publication number
- WO2008068721A1 WO2008068721A1 PCT/IB2007/054937 IB2007054937W WO2008068721A1 WO 2008068721 A1 WO2008068721 A1 WO 2008068721A1 IB 2007054937 W IB2007054937 W IB 2007054937W WO 2008068721 A1 WO2008068721 A1 WO 2008068721A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- semiconductor
- sensor device
- subregion
- mesa
- substance
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 131
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 10
- 239000000463 material Substances 0.000 claims abstract description 48
- 239000000126 substance Substances 0.000 claims abstract description 44
- 230000005670 electromagnetic radiation Effects 0.000 claims abstract description 18
- 239000011149 active material Substances 0.000 claims abstract description 8
- 230000008859 change Effects 0.000 claims abstract description 7
- 239000012530 fluid Substances 0.000 claims abstract description 6
- 239000002070 nanowire Substances 0.000 claims description 39
- 229910052710 silicon Inorganic materials 0.000 claims description 13
- 239000010703 silicon Substances 0.000 claims description 13
- 150000001875 compounds Chemical class 0.000 claims description 11
- 230000003287 optical effect Effects 0.000 claims description 11
- 239000002096 quantum dot Substances 0.000 claims description 7
- 108090000623 proteins and genes Proteins 0.000 claims description 6
- 102000004169 proteins and genes Human genes 0.000 claims description 6
- 230000027455 binding Effects 0.000 claims description 5
- 238000009739 binding Methods 0.000 claims description 5
- 239000013078 crystal Substances 0.000 claims description 4
- 229910021480 group 4 element Inorganic materials 0.000 claims description 4
- 239000012620 biological material Substances 0.000 claims description 3
- 229910052732 germanium Inorganic materials 0.000 claims description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 3
- 238000001228 spectrum Methods 0.000 claims description 3
- 230000000737 periodic effect Effects 0.000 claims description 2
- 230000005855 radiation Effects 0.000 abstract description 22
- 239000000758 substrate Substances 0.000 description 19
- 230000035945 sensitivity Effects 0.000 description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 230000004048 modification Effects 0.000 description 7
- 238000012986 modification Methods 0.000 description 7
- 239000010410 layer Substances 0.000 description 6
- 238000001514 detection method Methods 0.000 description 5
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 4
- 108020004414 DNA Proteins 0.000 description 4
- 102000053602 DNA Human genes 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- 201000010099 disease Diseases 0.000 description 3
- 208000037265 diseases, disorders, signs and symptoms Diseases 0.000 description 3
- 238000000407 epitaxy Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- 108020004635 Complementary DNA Proteins 0.000 description 2
- 229910000673 Indium arsenide Inorganic materials 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 229910005542 GaSb Inorganic materials 0.000 description 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 229910007709 ZnTe Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 239000000427 antigen Substances 0.000 description 1
- 102000036639 antigens Human genes 0.000 description 1
- 108091007433 antigens Proteins 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000008280 blood Substances 0.000 description 1
- 210000004369 blood Anatomy 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- VTGARNNDLOTBET-UHFFFAOYSA-N gallium antimonide Chemical compound [Sb]#[Ga] VTGARNNDLOTBET-UHFFFAOYSA-N 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 208000015181 infectious disease Diseases 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000000069 prophylactic effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 1
- 230000011664 signaling Effects 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 238000001429 visible spectrum Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/47—Scattering, i.e. diffuse reflection
- G01N21/4738—Diffuse reflection, e.g. also for testing fluids, fibrous materials
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y15/00—Nanotechnology for interacting, sensing or actuating, e.g. quantum dots as markers in protein assays or molecular motors
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
Definitions
- the invention also relates to a diagnostic instrument comprising such a sensor device and to a method of manufacturing such a semiconductor sensor device.
- a diagnostic instrument comprising such a sensor device and to a method of manufacturing such a semiconductor sensor device.
- Such a device is very suitable for detecting chemical and/or biochemical substances. In the latter case it can e.g. be used for detecting biomolecules like antigen/antibody bindings, biomolecules and others with a high sensitivity and reproducibility, and thus it can be used advantageously in protein and gene analysis, disease diagnostics and the like.
- the mesa-shaped semiconductor region may comprise a nano-wire.
- a nano-wire a body is intended having at least one lateral dimension between 1 and 100 nm and more in particular between 10 and 50 nm.
- a nano-wire has dimensions in two lateral directions that are in the said ranges.
- Another attractive way of using a semiconductor sensor device according to the invention is to use an external radiation source, e.g. a laser or a LED of which the emitted radiation is directed towards the second subregion.
- an external radiation source e.g. a laser or a LED of which the emitted radiation is directed towards the second subregion.
- the sensor device should be formed such that said radiation can reach the second subregion. This can be realized if the mesa- shaped semiconductor region is freely admissible (e.g. open) at the side where the radiation source is positioned. If the semiconductor sensor device forms a closed space in which the mesa-shaped semiconductor region is locked, this can be obtained by closing the sensor device at the side where the radiation source is to be positioned by means of a radiation transparent substrate.
- the III-V compound has an effective bandgap in the visible part of the spectrum.
- suitable materials for the second subregion may be a material having a bandgap which is just outside the visible spectrum a the IR side thereof.
- suitable materials are GaP, GaAs or InP and more preferably materials having a lower (bulk) bandgap like InAs and mixed crystals like InGaAs or InAsP.
- Mixed crystals offer the additional advantage that the structure of the semiconductor region can be made such that the strain induced in case of passive regions of silicon is made minimal.
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Health & Medical Sciences (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Molecular Biology (AREA)
- Pathology (AREA)
- Immunology (AREA)
- Biochemistry (AREA)
- Analytical Chemistry (AREA)
- Composite Materials (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Materials Engineering (AREA)
- Biophysics (AREA)
- Optics & Photonics (AREA)
- Light Receiving Elements (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
Abstract
L'invention concerne un dispositif (10) de détecteur semi-conducteur destiné à détecter une substance (30) comprenant une région (11, 11') semi-conductrice à structure mesa qui est formée sur une surface d'un corps semi-conducteur (12) tandis qu'un fluide (20) comprenant la substance (30) devant être détectée peut s'écouler le long de la région (11) semi-conductrice à structure mesa, la région (11) semi-conductrice à structure mesa comprenant, observée ultérieurement dans une direction longitudinale, une première sous-région semi-conductrice (1) comprenant un premier matériau semi-conducteur, une seconde sous-région semi-conductrice (2) comprenant un second matériau semi-conducteur différent du premier matériau semi-conducteur et une troisième sous-région (3) comprenant un troisième matériau semi-conducteur différent du second matériau semi-conducteur. Selon l'invention, les premier et troisième matériaux semi-conducteurs comprennent un matériau optiquement passif et le second matériau semi-conducteur comprend un matériau optiquement actif, la substance (30) devant être détectée peut changer une propriété de rayonnement électromagnétique (E) provenant de la seconde sous-région (2) et le dispositif (10) de détecteur semi-conducteur est formé de telle sorte que le rayonnement électromagnétique (E) dont la propriété a été changée puisse atteindre un détecteur (50). Le dispositif de détecteur (10) selon l'invention peut être très sensible, relativement compact et facile à fabriquer. Le rayonnement (E) peut provenir d'une source externe (40) ou peut être généré dans le dispositif (10).
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009539862A JP2010511886A (ja) | 2006-12-08 | 2007-12-06 | 半導体センサ装置、そのような装置を有する診断機器、およびそのような装置を製造する方法 |
| EP07849347A EP2092307A1 (fr) | 2006-12-08 | 2007-12-06 | Dispositif de détecteur semi-conducteur, instrument de diagnostic comprenant un tel dispositif et procédé de fabrication d'un tel dispositif |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP06125723.4 | 2006-12-08 | ||
| EP06125723 | 2006-12-08 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2008068721A1 true WO2008068721A1 (fr) | 2008-06-12 |
Family
ID=39126175
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/IB2007/054937 WO2008068721A1 (fr) | 2006-12-08 | 2007-12-06 | Dispositif de détecteur semi-conducteur, instrument de diagnostic comprenant un tel dispositif et procédé de fabrication d'un tel dispositif |
Country Status (4)
| Country | Link |
|---|---|
| EP (1) | EP2092307A1 (fr) |
| JP (1) | JP2010511886A (fr) |
| CN (1) | CN101558290A (fr) |
| WO (1) | WO2008068721A1 (fr) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102018125050A1 (de) * | 2018-10-10 | 2020-04-16 | Osram Opto Semiconductors Gmbh | Optoelektronischer Sensor |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030089899A1 (en) * | 2000-08-22 | 2003-05-15 | Lieber Charles M. | Nanoscale wires and related devices |
| US20050032100A1 (en) * | 2003-06-24 | 2005-02-10 | California Institute Of Technology | Electrochemical method and resulting structures for attaching molecular and biomolecular structures to semiconductor micro and nanostructures |
| WO2005064664A1 (fr) * | 2003-12-23 | 2005-07-14 | Koninklijke Philips Electronics N.V. | Composant a semi-conducteur comportant une heterojonction |
-
2007
- 2007-12-06 WO PCT/IB2007/054937 patent/WO2008068721A1/fr active Application Filing
- 2007-12-06 EP EP07849347A patent/EP2092307A1/fr not_active Withdrawn
- 2007-12-06 JP JP2009539862A patent/JP2010511886A/ja active Pending
- 2007-12-06 CN CNA2007800452346A patent/CN101558290A/zh active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030089899A1 (en) * | 2000-08-22 | 2003-05-15 | Lieber Charles M. | Nanoscale wires and related devices |
| US20050032100A1 (en) * | 2003-06-24 | 2005-02-10 | California Institute Of Technology | Electrochemical method and resulting structures for attaching molecular and biomolecular structures to semiconductor micro and nanostructures |
| WO2005064664A1 (fr) * | 2003-12-23 | 2005-07-14 | Koninklijke Philips Electronics N.V. | Composant a semi-conducteur comportant une heterojonction |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101558290A (zh) | 2009-10-14 |
| EP2092307A1 (fr) | 2009-08-26 |
| JP2010511886A (ja) | 2010-04-15 |
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