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WO2007018186A1 - Appareil et procédé pour inspecter une structure fine et programme d'inspection - Google Patents

Appareil et procédé pour inspecter une structure fine et programme d'inspection Download PDF

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Publication number
WO2007018186A1
WO2007018186A1 PCT/JP2006/315610 JP2006315610W WO2007018186A1 WO 2007018186 A1 WO2007018186 A1 WO 2007018186A1 JP 2006315610 W JP2006315610 W JP 2006315610W WO 2007018186 A1 WO2007018186 A1 WO 2007018186A1
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WO
WIPO (PCT)
Prior art keywords
sound wave
microstructure
pair
output
wave signal
Prior art date
Application number
PCT/JP2006/315610
Other languages
English (en)
Japanese (ja)
Inventor
Masami Yakabe
Naoki Ikeuchi
Original Assignee
Tokyo Electron Limited
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Limited filed Critical Tokyo Electron Limited
Priority to JP2007529578A priority Critical patent/JPWO2007018186A1/ja
Publication of WO2007018186A1 publication Critical patent/WO2007018186A1/fr

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/282—Testing of electronic circuits specially adapted for particular applications not provided for elsewhere
    • G01R31/2829—Testing of circuits in sensor or actuator systems
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C99/00—Subject matter not provided for in other groups of this subclass
    • B81C99/0035—Testing
    • B81C99/005—Test apparatus
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/18—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration in two or more dimensions
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P21/00—Testing or calibrating of apparatus or devices covered by the preceding groups
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P2015/0805—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration
    • G01P2015/0822—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass
    • G01P2015/084—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass the mass being suspended at more than one of its sides, e.g. membrane-type suspension, so as to permit multi-axis movement of the mass
    • G01P2015/0842—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass the mass being suspended at more than one of its sides, e.g. membrane-type suspension, so as to permit multi-axis movement of the mass the mass being of clover leaf shape

Definitions

  • Inspection device for inspection of minute structure Inspection device for inspection of minute structure, inspection method and inspection program
  • the present invention relates to an inspection apparatus, an inspection method, and an inspection program of a microstructure. More specifically, the present invention relates to, for example, an inspection apparatus, inspection method, and inspection program for a microstructure for inspecting a micro electro mechanical system (MEMS).
  • MEMS micro electro mechanical system
  • MEMS is a device in which various functions such as mechanical 'electronic' light 'chemistry are integrated, in particular using semiconductor fine processing technology and the like.
  • MEMS technologies that have been put into practical use so far include MEMS devices such as acceleration sensors, pressure sensors, and air flow sensors, which are micro sensors, as various sensors for automobile 'medical treatment.
  • MEMS technology for an ink jet printer head, it becomes possible to increase the number of nozzles that eject ink and to eject ink accurately. This makes it possible to improve the image quality and achieve high speed printing.
  • a micro mirror array that is used as a reflector type projector is known as a general MEMS device.
  • Japanese Patent Application Laid-Open No. 5-34371 discloses, by way of example, a resistance value of an acceleration sensor that changes by blowing air to an acceleration sensor formed on a wafer, and determines the characteristics of the acceleration sensor. An inspection method is proposed.
  • a structure having a minute moving part such as an acceleration sensor changes its response characteristic even to a minute movement. Therefore, in order to measure its characteristics, it is necessary to carry out highly accurate inspections.
  • the characteristics of the acceleration sensor must be measured by fine adjustment. For this purpose, it is necessary to control the flow rate of the gas and blow the gas uniformly to the device to carry out highly accurate inspection.
  • a complex and expensive tester must be provided.
  • an object of the present invention is to provide an inspection apparatus, an inspection method, and an inspection program of a microstructure which can inspect a structure having a minute movable part with a relatively simple configuration with high accuracy.
  • a microstructure for inspecting characteristics of a microstructure, using a probe card provided with a sound wave generating means for outputting a test sound wave to the microstructure having a movable portion.
  • Sound wave signal output means for outputting a sound wave signal for generating a test sound wave
  • an amplification means for driving the sound wave generation means with the sound wave signal output.
  • measuring means for measuring an output value output according to the movement of the movable portion of the microstructure by the generated test sound wave based on the sound wave signal output from the amplification means, and the measuring means And characterization means for characterizing the microstructure based on the measured output value.
  • the movable portion of the microstructure can be powered by the test sound wave based on the sound wave signal to evaluate the characteristics of the microstructure.
  • the microstructure is formed on a substrate provided with electrodes
  • the probe card includes at least one pair of probe needles connected to the same electrode of the microstructure, Resistance measurement means for measuring the resistance between at least one pair of probe needles when the pair of probe needles are in contact with the same electrode, a power source for supplying a voltage to the probe card, and at least one pair The voltage is applied from the power supply to at least one pair of probe needles in a state where the probe needles of the above are in contact with the same electrode, and the voltage is measured until the resistance value measured by the resistance value measuring means becomes less than the first predetermined value.
  • control means for controlling conduction between at least one pair of probe needles by raising
  • the apparatus includes a stage for raising and lowering the microstructure, and the control means controls the stage in response to the resistance value measured by the resistance value measuring means being equal to or less than a predetermined second value. Then insert at least one pair of probe needles into the electrode.
  • storage means for storing beforehand the relationship between the plurality of frequencies of the test sound wave or the sound wave signal and the output value as a table, and the characteristic evaluation means provides the corresponding output value when the test sound wave is given. Read out the table force of the storage means and evaluate whether the microstructure outputs the corresponding output value.
  • the sound wave signal output means generates one sine wave signal or a plurality of frequency signals as the sound wave signal.
  • the plurality of frequency signals are white noise signals.
  • Another aspect of the present invention is a method for inspecting a characteristic of a microstructure, using a probe card provided with a sound wave generating means for outputting a test sound wave to a microstructure having a movable part.
  • a method of inspecting a structure comprising the steps of: outputting a sound wave signal for generating a test sound wave from the sound wave generating means; amplifying the outputted sound wave signal to drive the sound wave generating means; Based on the step of measuring the output value output according to the movement of the movable portion of the microstructure by the test sound wave generated by the sound wave generation means, and evaluating the characteristics of the microstructure based on the measured output value And the step of
  • the characteristics of the microstructure can be evaluated by moving the movable portion of the microstructure with the test sound wave based on the sound wave signal.
  • the microstructure is formed on a substrate provided with electrodes
  • the probe card includes at least one pair of probe needles connected to the same electrode of the microstructure. Applying a voltage to at least one pair of probe needles while bringing at least one pair of probe needles into contact with the same electrode, and increasing the voltage until the measured resistance value falls below a first predetermined value Control the conduction between at least one pair of probe needles.
  • a characteristic of a microstructure is inspected by a computer using a probe card provided with a sound wave generating means for outputting a test sound wave to a microstructure having a movable part. And a step of outputting a sound wave signal for generating a test sound wave from the sound wave generating means, a step of amplifying the outputted sound wave signal and driving the sound wave generation means, sound wave Based on the signal, the step of measuring the output value output according to the movement of the movable part of the microstructure by the test sound wave generated by the sound wave generation means, and based on the measured output value, the microstructure Evaluating the characteristics of the body.
  • the movable portion of the microstructure is generated by the sound wave signal.
  • the characteristics of the microstructure can be measured by moving.
  • a sound wave signal is output to the sound wave generation means using the probe card provided with the sound wave generation means for outputting the test sound wave to the microstructure having the movable portion. Since the characteristics of the microstructure are evaluated based on the signal given in response to the movement of the movable portion of the microstructure by the sound wave signal, the structure having a minute movable portion can be obtained with a relatively simple configuration. It can inspect it accurately.
  • FIG. 1 is an external perspective view showing a wafer on which a microstructure is formed.
  • FIG. 2 is a schematic view showing a 3-axis acceleration sensor chip of an example of the microstructure shown in FIG.
  • FIG. 3 is a circuit diagram of a Wheatstone bridge.
  • FIG. 4 is a view for explaining a probe card.
  • FIG. 5 is a block diagram of a microstructure inspection apparatus according to an embodiment of the present invention.
  • FIG. 6 is a flow chart for explaining the overall operation of the inspection apparatus for microstructures according to an embodiment of the present invention.
  • FIG. 7 is a flowchart of chuck height control shown in FIG.
  • FIG. 8 A diagram showing a flowchart of judgment processing of “flipping normal force” shown in FIG.
  • FIG. 9 A diagram showing a flowchart of judgment processing of “DC test normal force” shown in FIG.
  • FIG. 10 A diagram showing a flowchart of determination processing of “the excitation test normal force” shown in FIG.
  • FIG. 11 is a diagram showing a flowchart of an excitation / measurement sequence shown in FIG.
  • FIG. 1 is an external perspective view showing a wafer on which a 3-axis acceleration sensor chip to be inspected by the inspection apparatus for a microstructure according to an embodiment of the present invention is formed, and FIG. 2 is shown in FIG.
  • FIG. 3 is a schematic view showing a partially broken 3-axis acceleration sensor chip, and FIG. 3 is a circuit diagram of a Wheatstone bridge.
  • a plurality of three-axis accelerations as microstructures are provided on a wafer 1 as a substrate.
  • a sensor chip 2 is formed.
  • a plurality of electrode pads PD are formed in the periphery, and four weight mass AR at the center as a movable portion having at least two or more movements.
  • Each double pyramid AR is formed of a square pole, and one corner of the square pole is supported by being connected to the central part of four plate beams BM.
  • the beams BM are formed to be orthogonal to each other in two axes of X and Y.
  • On the surface of the beam BM extending in the X-axis direction four X-axis detecting piezoresistive elements are provided as diffusion resistors per one axis. In parallel to the four piezoresistive elements, four piezoresistive elements for Z-axis detection are provided.
  • On the surface of the beam BM extending in the Y-axis direction four piezoresistive elements for Y-axis detection are provided.
  • the three-axis acceleration sensor chip 2 shown in FIG. 2 can use an inexpensive IC process, and is small in size because the sensitivity element is not reduced even if the resistance element which is a detection element is formed small. And low cost is advantageous.
  • the four piezoresistive elements provided corresponding to each axis constitute resistances R1 to R4 of the Wheatstone bridge circuit as a detection circuit shown in FIG. 3, respectively.
  • Three Wheatstone bridge circuits are provided on the 3-axis acceleration sensor chip 2 corresponding to each of the X axis, Y axis, and Z axis.
  • a piezoresistive element has a property (piezoresistance effect) in which its resistance value changes with applied strain, and in the case of tensile strain, the resistance value increases, and in the case of compressive strain, the resistance value decreases. I will be less.
  • Apply the voltage Vdd to one end of the Wheatstone bridge circuit shown in Figure 3 and ground the other end to GND.
  • the output voltage Vout output from the middle point is expressed by voltages Vx (y) out and Vzout shown in the following equations with respect to the X, ⁇ , and Z axes.
  • Vx (y) out ⁇ R3 / (R2 + R3)-R4 / (Rl + R4) ⁇ -Vdd
  • Vzout ⁇ R3Z (Rl + R3)-R4 / (R2 + R4) ⁇ ⁇ Vdd
  • the Wheatstone bridge circuit corresponding to each of the X, Y, and ⁇ ⁇ axes can detect the acceleration component of each output axis as an output voltage which is independently separated.
  • the 3-axis acceleration sensor chip 2 can also detect a DC component of acceleration, and therefore can also be used as a tilt angle sensor that detects gravitational acceleration.
  • FIG. 4 is a conceptual view for explaining a probe card used in the inspection apparatus for microstructures according to an embodiment of the present invention.
  • Wafer 1 shown in FIG. 1 is mounted on chuck 8.
  • the chuck 8 incorporates a heater so that the wafer 1 can be set to various temperature environments, and is moved in three axes by a Z stage 9 which is a moving mechanism as a stage, an X stage 10, and a Y stage 11. It is possible to move.
  • the chuck 8 can rotate the wafer 1 forward and backward in the ⁇ direction.
  • the probe card 4 is disposed above the wafer 1.
  • the probe card 4 includes a circuit board 5 and a plurality of probe needles 6 are attached to the circuit board 5 so as to face the wafer 1.
  • the circuit board 5 is provided with a speaker 3 as a sound wave generating means and a microphone 7 so as to face the wafer 1.
  • the probe needle 6 is electrically connected by contacting the electrode pad PD of the 3-axis acceleration sensor chip 2.
  • the circuit board 5 has a predetermined area so that a test sound wave is output at a predetermined frequency and a predetermined sound pressure to the movable portion of the 3-axis acceleration sensor chip 2 of the wafer 1 from the spin force 3. An opening is formed.
  • the microphone 7 detects a test sound wave.
  • the test sound wave generated from the speaker 3 has a predetermined sound pressure between the wafer 1 and the probe card 4 among the plurality of 3-axis acceleration sensor chips 2 at a predetermined sound pressure.
  • the third axis acceleration sensor chip 2 is sealed so as to be applied only to the movable portion of the predetermined three-axis acceleration sensor chip 2.
  • the electrode pad PD is an inspection electrode electrically connected to the probe needle 6, and is formed around the 3-axis acceleration sensor chip 2 as shown in FIG. Therefore, by providing the opening in the area surrounded by the probe needle 6 and arranging the speaker 3 thereon, it is possible to output a test sound wave right above the movable part of the predetermined 3-axis acceleration sensor chip 2. .
  • FIG. 5 is a block diagram of a tester of an example of a microstructure inspection apparatus according to an embodiment of the present invention.
  • the tester 20 has a probe force via the switching circuit 30. It is connected to 4 and is also connected to Prono O.
  • the switching circuit 30 switches the connection between the tester 20 and the probe needle 6.
  • the tester 20 has a controller 21 that operates as a characteristic evaluation unit and a control unit, a function generator 22 that operates as a sound wave signal output unit, and a power amplifier 23 that operates as an amplification unit that electrically drives the speaker 3.
  • the controller 21 controls the overall operation of the tester 20, and is configured by a computer. Further, the controller 21 is connected to a prono O.
  • the prober 40 performs control for moving the chuck 8, the Z stage 9, the X stage 10, and the Y stage 11 shown in FIG. 4 in the respective axial directions.
  • the function generator 22 generates a test signal waveform such as a sine wave signal or white noise as a plurality of frequency signals.
  • the output of the function generator 22 is supplied to the power amplifier 23, amplified, and supplied to the speaker 3 mounted on the probe card 4.
  • the device measuring instrument 24 is composed of, for example, an AZD converter, and converts the output voltage value and consumption current value of the Wheatstone bridge circuit given from the probe needle 6 and the output value of the test sound wave detected by the microphone 7 into digital signals. And give it to the controller 21.
  • the resistance measuring instrument 25 measures a resistance value or the like given from the probe card 4 and outputs it to the controller 21.
  • Switching circuit 30 is rendered conductive in response to a pulse signal applied from pulse generator 26 to switch the 3 V voltage output from power supply circuit 27 or the 5 V voltage output from power supply circuit 28. Supply to probe card 4. Also, the switching circuit 30 conducts in response to the pulse signal supplied from the pulse generator 26, and is included in the probe card 4. The output voltage value and current consumption value output from the Wheatstone bridge circuit, the microphone 7 The test sound wave detected in the above is output to the device measuring instrument 24. Further, the switching circuit 30 conducts in response to the pulse signal supplied from the pulse generator 26, and outputs the resistance value between the probe needle 6 and the electrode pad PD to the resistance measuring instrument 25.
  • the power supply circuit 27 supplies a voltage of, for example, 3 V to the probe card 4 via the switching circuit 30 in order to electrically operate the three-axis acceleration sensor chip 2.
  • the power supply circuit 28 supplies the probe card 4 via the switching circuit 30 with a voltage of, for example, 5 V necessary for flipping.
  • the input unit 31 inputs information necessary for the examination, and the display unit 32 displays the examination result.
  • the memory 33 stores inspection results and the like, and also stores, as a table, a relationship between a plurality of frequencies or sound signals of the test sound wave and a voltage value indicating the movement of the microstructure 2.
  • the controller 21 reads out the corresponding voltage value from the table of the memory 33 when the test sound wave is applied, and evaluates whether the microstructure 2 outputs the corresponding voltage value. That is, the controller 21 evaluates the characteristics of the microstructure based on the movement data table of the microstructure 2 and the measurement values output from the device measuring instrument 24 and the resistance measuring instrument 25.
  • FIG. 6 is a flow chart for explaining the operation of the inspection apparatus for microstructures according to an embodiment of the present invention.
  • the inspection apparatus inspects the microstructure by executing a program based on the flowchart.
  • FIG. 6 an outline operation of the inspection apparatus for microstructures according to the embodiment of the present invention will be described.
  • the main processing steps shown in FIG. 6 will be described in detail later with reference to the flowcharts shown in FIG. 7 to FIG.
  • the operator places the wafer 1 on the chuck 8 shown in FIG.
  • the controller 21 determines that the wafer 1 has been loaded in step (abbreviated as SP in the drawing) SP1
  • it outputs a drive signal in step SP2 and the probe needles 6 of the probe substrate 5 are used as electrodes of the measurement chip.
  • the pad PD Move on the pad PD. That is, in order to enable the tester 20 to measure the output voltage of the Wheatstone bridge circuit described in FIG. 4, the probe needle 6 is opposed to the electrode pad PD by the stage 10 and the Y stage 11 Position the axis direction and the Y axis direction.
  • chuck height control is performed.
  • the chuck height control detects that the needle has touched the electrode pad PD by detecting the change in the electrical resistance between the pair of probe needles 6, and a certain height from that point is detected. Minutes (hereinafter referred to as overdrive amount Do. ) Only press probe needle 6 to electrode pad PD.
  • overdrive amount Do. Minutes (hereinafter referred to as overdrive amount Do. ) Only press probe needle 6 to electrode pad PD.
  • overdrive amount Do. Only press probe needle 6 to electrode pad PD.
  • the tip of one pair of probe needles 6 contacts the electrode pad PD, and the pair of probe needles 6 is pressed against the electrode pad PD with a fixed overdrive amount to control the chuck height. Do. In this way, even if the heights of the 3-axis acceleration sensor chips 2 are different, the needle pressure when pressing the pair of probe needles 6 against the electrode pad PD is made constant.
  • the pair of probe needles 6 be in contact with the same electrode pad PD from the perpendicular direction.
  • the effect of needle pressure is a force that may appear in the X and Y axes.
  • detection of whether or not the tip of the pair of probe needles 6 has come into contact with the electrode pad PD may be performed by, for example, laser measurement using the probe needles 6 and the electrode pads PD other than measuring the resistance value. The distance between them may be measured, or the image force between the tip of the probe needle 6 and the electrode pad PD may be extracted to measure the contact state.
  • the needle pressure is maintained at a constant small value by moving the probe needle 6 toward the electrode pad PD by a fixed overdrive amount from that point. Get down.
  • the amount of overdrive is set in advance to an appropriate value so as to reduce the contact resistance between the probe needle 6 and the electrode pad PD and to suppress the stress due to the needle pressure of the probe needle 6 to be negligible.
  • the probe needles 6 are brought into contact before measurement and then displaced by a predetermined overdrive amount. As a result, inspection can be performed under the same conditions for each 3-axis acceleration sensor chip 2 while minimizing the influence on the 3-axis acceleration sensor chip 2.
  • step SP4 the flitting control based on the flitting phenomenon is performed.
  • the “fritting phenomenon” means that when the potential gradient applied to the acid film formed on the surface of the metal (in this embodiment, the electrode pad PD) becomes about 10 5 to 10 6 V / cm The phenomenon that the oxide film is destroyed due to the current flow due to the nonuniformity of film thickness and metal composition.
  • a voltage is applied from the power supply circuit 28 to one of the pair of probe needles 6 while the tips of the pair of probe needles 6 are in contact with the same electrode pad PD. Then, when the voltage is gradually raised, a flitting phenomenon based on the voltage difference applied to the pair of probe needles 6 breaks the acid film between the pair of probe needles 6 in the electrode pad. Current flows. As a result, electrical continuity is established between the probe needle 6 and the electrode pad PD. Note that the flipping control is performed for each pair of probe needles 6.
  • step SP5 it is determined whether or not the force is normally applied. That is, the switching circuit 30 switches the connection of the pair of probe needles 6 from the power supply circuit 28 to the input side of the resistance measuring instrument 25. Thereby, the contact resistance value between the probe needle 6 and the electrode pad PD is measured by the resistance measuring instrument 25 and given to the controller 21. The controller 21 determines whether or not the flipping has been normally performed by determining the contact resistance value. If it is determined that the flipping is not properly performed, the Z stage 9 is driven to lower the wafer 1 in step SP6. Then, the processing of steps SP3 to SP5 is repeated.
  • step SP7 the pulse generator 26 also outputs a pulse signal to switch the switching circuit 30.
  • a voltage is also taken out of the electrode pad PD force and applied to the device measuring instrument 24, and the controller 21 tests the DC voltage based on the output of the device measuring instrument 24.
  • the DC voltage test is to determine whether the output voltage Vout of the Wheatstone bridge circuit corresponding to each of the X, ⁇ , and Z axes is a predetermined voltage.
  • step SP8 the controller 21 determines whether or not the DC test has been successfully performed. If it is determined that the normal operation has not been performed, it is determined in step SP9 whether or not the nth DC test has been performed. If it is the nth time or less, perform the DC test again in step SP8. When the DC test is performed n times, in step SP10, the result of the DC test is saved in the memory 33, and then the process proceeds to step SP14. In this case, do not perform an excitation test because the measurement chip is defective!
  • step SP8 When it is determined in step SP8 that the DC test has been performed normally, an excitation test is performed in step SP11. Excitation test from function generator 22 It is performed by generating a sine wave signal or a white noise signal. Then, the sine wave signal or the white noise signal is amplified by the power amplifier 23 and output to the speaker 3 mounted on the probe card 4. A test sound wave of a predetermined sound pressure is generated from the speaker 3 to vibrate the movable part of the measurement chip. Since the controller 21 stores in advance the relationship between the plurality of frequencies or sound wave signals of the test sound wave and the movement of the movable part by each test sound wave in the table of the memory 33, when the test sound wave is given to the movable part Measure the movement corresponding to.
  • the change in the resistance value of the piezoresistive element which changes based on this movement, is measured based on the voltage applied through the probe needle 6.
  • the characteristics are measured by a force or the like in which the resistance value of the measurement chip changes linearly. Since the applied acceleration and the output voltage of the Wheatstone bridge circuit have a substantially linear relationship, it is possible to determine whether the measurement chip is good or not by determining whether the change is linear.
  • by sweeping a sine wave signal to generate a test sound wave it is possible to measure the resonance frequency and the amplitude at the resonance frequency.
  • test sound wave given from the speaker 3 to the measurement chip by the microphone 7 is detected.
  • the detection signal is converted to a digital signal by the device measuring instrument 24 and given to the controller 21 to determine whether a predetermined test sound wave has reached the movable portion of the measuring chip.
  • step SP12 If it is determined in step SP11 that the vibration test has not been performed normally, it is determined in step SP12 whether it is the n-th vibration test. If it is the nth time or less, an excitation test is performed again in step SP11. When it is determined that the operation has been performed n times, data such as the linearity, the resonance frequency in each axis of X, ⁇ , Z, and the amplitude at the resonance frequency are saved in the memory 33 in step SP13.
  • step SP16 it is determined whether or not the measuring tip has a force. If it is determined that there is a measurement tip, in step SP2, the X-stage 10 and the Y-stage 11 are moved so as to correspond to the position of the next measurement tip. In step SP 16, when it is determined that there is no measuring tip to be tested next, the operator removes the measuring tip from the chuck 8. If it is determined in step SP17 that the wafer 1 has been unloaded, it is determined in step SP18 whether or not there is a change in the measured temperature. If there is no temperature change, a series of processing is finished. If there is a temperature change, the temperature of the chuck 8 is changed in step SP19, and the process proceeds to step SP2, and the same processing as described above is performed.
  • Data of measured values obtained as a result of the processing of steps SP1 to SP19 are output to the controller 21.
  • the controller 21 evaluates the characteristics of the microstructure 2 based on the measurement value data.
  • FIG. 7 is a flowchart showing details of chuck height control shown in step SP3 of FIG.
  • the switching circuit 30 is switched by the pulse signal from the pulse generator 26, and the probe needle 6 is connected to the input of the resistance measuring instrument 25 of the tester 20.
  • the resistance value between the pair of probe needles 6 is measured by the resistance measuring instrument 25 and the measured resistance value is output to the controller 21.
  • step SP33 the controller 21 determines whether or not the resistance value is equal to or less than the second predetermined value, and if it is equal to or less than the predetermined value, the probe needle 6 contacts the electrode pad PD. Is judged to be good.
  • step SP34 the Z stage 9 is raised by a predetermined height, and the probe needle 6 is inserted into the electrode pad PD.
  • step SP33 When it is determined in step SP33 that the resistance value is not less than the predetermined value, it is determined that the contact between the probe needle 6 and the electrode pad PD is not good, and in step SP35, the Z stage Adjust the height of chuck 8 by raising 9. By performing this chuck height control, the contact state between the probe needle 6 and the electrode pad PD can be improved even if the 3-axis acceleration sensor chip 2 has a variation in height due to warpage of the wafer 1 or the like. .
  • FIG. 8 is a flowchart showing details of whether the flipping in step SP5 shown in FIG. 6 is normal.
  • the electrode pad n is selected, and in step SP62, the resistance measuring device 25 measures the resistance value, and outputs data indicating the resistance value to the controller 21.
  • step SP63 it is determined whether or not the resistance value is smaller than a predetermined value which is a first value. , It is determined whether or not the force is normally applied. If it is determined in step SP63 that the resistance measurement value is not equal to or less than the predetermined value, it is determined in step SP64 that the fritting is defective.
  • FIG. 9 is a flowchart of the process of determining whether the DC test is normal in step SP8 shown in FIG.
  • the controller 21 measures the voltage supplied via the device measuring instrument 24 in step SP71, and measures the current in step SP72.
  • Step SP73 Determine if the DC voltage is within the specified voltage range or not! //.
  • step SP 74 the offset voltage of the output voltage Vout of the Wheatstone bridge circuit corresponding to the X axis, Y axis, and Z axis is measured.
  • step SP75 it is determined whether or not the offset voltage is within the range of the predetermined threshold voltage and the appropriate force. If the offset voltage is correct, it is determined in step SP76 that the DC test is normal. Then, in step SP77, the DC voltage of the test result is stored in the memory 33.
  • step SP 73 When it is determined in step SP 73 that the DC voltage is out of the predetermined threshold voltage range, or in step SP 75, it is determined that the offset voltage is out of the predetermined threshold voltage range. Sometimes, in step SP78, it is determined that the DC test is defective. Then, in step SP77, the memory 33 stores that the DC test is defective. The measurement chip determined to be a DC test failure is removed by the operator.
  • FIG. 10 is a diagram showing a flowchart of the determination processing of “vibration test OK force” of step SP 11 shown in FIG. 6, and FIG. 11 is a drawing of the excitation 'measurement sequence shown in FIG. It is a figure which shows a flowchart.
  • a vibration measurement sequence is executed in step SP80.
  • selection of a waveform to be set by the function generator 22 is performed in step SP91 shown in FIG.
  • the AC amplitude of the white noise signal is set by the function generator 22.
  • the white noise signal is output at the set AC amplitude.
  • the white noise signal is amplified by the power amplifier 23 and output to the speaker 3 mounted on the probe card 4. Even if the amplified white noise signal is applied to the speaker 3, the sound wave is not stably output immediately.
  • the process waits for a predetermined time at step SP94 until the sound wave based on the white noise signal is stably output from the speaker 3. Thereafter, based on the sound wave of the white noise signal output from the speaker 3, the movable portion of the measurement chip vibrates, and the output of the Wheatstone bridge circuit changes.
  • the controller 21 measures the output value of each of the X axis, the Y axis, and the Z axis by FFT (Fast Fourier Transform) based on the change in the output of the Wheatstone bridge circuit.
  • FFT Fast Fourier Transform
  • step SP96 By measuring with FFT, it is possible to extract which frequency component is included in the output signal and how much. Then, in step SP96, the peak frequency and the amplitude are measured from the FFT result. Output of white noise is stopped at step SP97. Since white noise is a noise signal that has components of uniform magnitude over the entire frequency band, it is possible to perform an excitation test in the entire frequency band by performing an excitation test with a test sound wave based on white noise.
  • step SP 91 When a sine wave signal is selected as the waveform in step SP 91, the frequency and amplitude of the sine wave signal are set by the function generator 22 in step SP 98. In step SP99, a sine wave signal is output from the function generator 22. The sine wave signal is amplified by the power amplifier 23 and output to the speaker 3 mounted on the probe card 4.
  • step SP100 Since the sound wave is not stably output immediately even if it is given to the amplified sine wave signal power speaker 3, the sound wave based on the sine wave signal is stably output from the speaker 3 in step SP100. Wait for a predetermined time.
  • step SP101 based on the output change of the Wheatstone bridge circuit that appears due to the vibration of the movable part of the measurement chip based on the sound wave of the sine wave signal, it is measured by the change force FFT of the X axis, Y axis and Z axis output. Then, in step SP102, the peak-to-peak frequency and amplitude are also measured for the FFT result force.
  • step SP103 it is selected whether or not to stop the output of the sine wave signal, and when it is selected to stop the output of the sine wave signal, in step SP104, the frequency characteristic also has peak value, frequency and amplitude.
  • step SP97 the output of the sine wave signal by the function generator 22 is stopped.
  • step SP105 the frequency of the sine wave signal is changed by + ⁇ , and the process returns to step SP99 to output the sine wave signal.
  • step SP81 a determination process of the excitation test is performed. This determination is made by determining whether the peak frequency of the X axis falls within the range of the minimum and maximum values of the X, Y, and Z axis thresholds. If it is determined in step SP82 that the vibration test has been performed normally, the result is stored in the memory 33 in step SP83. If the vibration test is not performed normally, it is determined that the vibration test is defective in step SP84, and the memory 33 stores that the vibration test is not good. The measurement chip whose vibration test is judged to be defective is removed by the operator.
  • the change in impedance value or impedance of a capacitive element, a reactance element, or the like is not limited thereto. It is also possible to detect changes in voltage, current, frequency, phase difference, delay time, etc. based on changes in value to determine characteristics.
  • the force described in the example using the speaker 3 as the sound wave output means is not limited to this, and other movable means capable of moving the movable portion of the 3-axis acceleration sensor chip 2 Do not use.
  • the force described in the case of testing the characteristics of the three-axis acceleration sensor chip 2 according to the present invention is not limited to the micro structure of other MEMS devices.
  • the present invention can also be applied to a case where a test is performed on a movable part of a structure.
  • the inspection apparatus and inspection method of a microstructure according to the present invention can be used to inspect an EMS device such as a 3-axis acceleration sensor.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • General Engineering & Computer Science (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Micromachines (AREA)
  • Pressure Sensors (AREA)
  • Measurement Of Mechanical Vibrations Or Ultrasonic Waves (AREA)

Abstract

La présente invention décrit une puce à mesurer dans un capteur d'accélération en trois dimensions qui est chargée sur un mandrin (SP1), une aiguille de sonde est décalée vers la puce à mesurer (SP2), une commande de frittage est réalisée (SP4), l'aiguille de sonde est reliée à un tampon d'électrode de la puce à mesurer et un test CC est réalisé (SP7-SP10). Un test de vibration est alors réalisé en appliquant des ondes acoustiques de test vers une section mobile de la puce à mesurer à partir d'un haut-parleur (SP11-SP13) et, en fonction des résultats, les caractéristiques du capteur d'accélération à trois dimensions sont mesurées.
PCT/JP2006/315610 2005-08-11 2006-08-07 Appareil et procédé pour inspecter une structure fine et programme d'inspection WO2007018186A1 (fr)

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JP2009139172A (ja) * 2007-12-05 2009-06-25 Tokyo Electron Ltd 微小構造体の変位量検出装置
EP4443172A1 (fr) * 2023-04-06 2024-10-09 Nederlandse Organisatie voor toegepast-natuurwetenschappelijk Onderzoek TNO Procédé et dispositif de sonde de détection pour mesurer un paramètre d'une puce quantique

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CN103018651B (zh) * 2012-12-06 2014-09-03 中国电子科技集团公司第十三研究所 用于mems器件的在片测试系统及其测试方法

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JPH0541421A (ja) * 1990-08-06 1993-02-19 Tokyo Electron Ltd 電気回路測定用探針の接触検知装置及びこの接触検知装置を用いた電気回路測定装置
JPH0534371A (ja) * 1991-07-31 1993-02-09 Tokai Rika Co Ltd 半導体加速度センサの感度測定装置
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009139172A (ja) * 2007-12-05 2009-06-25 Tokyo Electron Ltd 微小構造体の変位量検出装置
EP4443172A1 (fr) * 2023-04-06 2024-10-09 Nederlandse Organisatie voor toegepast-natuurwetenschappelijk Onderzoek TNO Procédé et dispositif de sonde de détection pour mesurer un paramètre d'une puce quantique
WO2024210751A1 (fr) * 2023-04-06 2024-10-10 Nederlandse Organisatie Voor Toegepast-Natuurwetenschappelijk Onderzoek Tno Procédé et dispositif de sonde de détection pour mesurer un paramètre d'une puce quantique

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