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WO2007053624A3 - Dispositifs optiques comprenant des couches a semi-conducteurs texturees - Google Patents

Dispositifs optiques comprenant des couches a semi-conducteurs texturees Download PDF

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Publication number
WO2007053624A3
WO2007053624A3 PCT/US2006/042483 US2006042483W WO2007053624A3 WO 2007053624 A3 WO2007053624 A3 WO 2007053624A3 US 2006042483 W US2006042483 W US 2006042483W WO 2007053624 A3 WO2007053624 A3 WO 2007053624A3
Authority
WO
WIPO (PCT)
Prior art keywords
semiconductor layers
optical devices
semiconductor
leds
substrate
Prior art date
Application number
PCT/US2006/042483
Other languages
English (en)
Other versions
WO2007053624A2 (fr
Inventor
Theodore D Moustakas
Jasper S Cabalu
Original Assignee
Univ Boston
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Boston filed Critical Univ Boston
Priority to JP2008538970A priority Critical patent/JP2009515340A/ja
Priority to EP06827176A priority patent/EP1952449A4/fr
Priority to CA002627880A priority patent/CA2627880A1/fr
Publication of WO2007053624A2 publication Critical patent/WO2007053624A2/fr
Publication of WO2007053624A3 publication Critical patent/WO2007053624A3/fr

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/821—Bodies characterised by their shape, e.g. curved or truncated substrates of the light-emitting regions, e.g. non-planar junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/02428—Structure
    • H01L21/0243—Surface structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/02433—Crystal orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN

Landscapes

  • Led Devices (AREA)
  • Luminescent Compositions (AREA)

Abstract

L'invention concerne un capteur, une pile solaire ou un émetteur à semi-conducteurs, ou un précurseur de ceux-ci, comprenant un substrat et une ou plusieurs couches à semi-conducteurs texturées déposées sur le substrat. Les couches texturées améliorent l'extraction ou l'absorption de la lumière. La texturation de la zone formée de multiples puits quantiques améliore de manière significative l'efficacité quantique interne si le semi-conducteur est polaire et les puits quantiques sont formés le long de la direction polaire. L'électroluminescence des DELs de l'invention est dichromatique, et permet d'obtenir des DELs de couleur variable, y compris des DELs blanches, sans utiliser de phosphore.
PCT/US2006/042483 2005-10-31 2006-10-31 Dispositifs optiques comprenant des couches a semi-conducteurs texturees WO2007053624A2 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2008538970A JP2009515340A (ja) 2005-10-31 2006-10-31 テクスチャ出しされた半導体層を特徴とする光学装置
EP06827176A EP1952449A4 (fr) 2005-10-31 2006-10-31 Dispositifs optiques comprenant des couches a semi-conducteurs texturees
CA002627880A CA2627880A1 (fr) 2005-10-31 2006-10-31 Dispositifs optiques comprenant des couches a semi-conducteurs texturees

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US73203405P 2005-10-31 2005-10-31
US60/732,034 2005-10-31

Publications (2)

Publication Number Publication Date
WO2007053624A2 WO2007053624A2 (fr) 2007-05-10
WO2007053624A3 true WO2007053624A3 (fr) 2009-04-30

Family

ID=38006465

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2006/042483 WO2007053624A2 (fr) 2005-10-31 2006-10-31 Dispositifs optiques comprenant des couches a semi-conducteurs texturees

Country Status (5)

Country Link
EP (1) EP1952449A4 (fr)
JP (1) JP2009515340A (fr)
CN (1) CN101506937A (fr)
CA (1) CA2627880A1 (fr)
WO (1) WO2007053624A2 (fr)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI490921B (zh) * 2007-11-21 2015-07-01 Mitsubishi Chem Corp Crystalline Growth Method of Nitride Semiconductor and Nitride Semiconductor and Nitride Semiconductor Light-emitting Element
KR20100097205A (ko) * 2007-12-10 2010-09-02 쓰리엠 이노베이티브 프로퍼티즈 컴파니 단순화된 광 추출을 갖는 하향-변환된 발광 다이오드
US8492737B2 (en) 2010-11-18 2013-07-23 The Arizona Board Of Regents On Behalf Of The University Of Arizona Tunable infrared emitter
TW201436263A (zh) * 2013-01-25 2014-09-16 Corsam Technologies Llc 光伏雙重紋理化玻璃
CN103280504A (zh) * 2013-05-14 2013-09-04 西安神光皓瑞光电科技有限公司 一种用于提高发光器件效率的方法
CN104253179A (zh) * 2013-06-28 2014-12-31 晶能光电（江西）有限公司 一种GaN基LED外延片的制备方法
CN103413876A (zh) * 2013-08-09 2013-11-27 西安神光皓瑞光电科技有限公司 一种发光器件及其制备方法
JP6434878B2 (ja) * 2015-09-10 2018-12-05 株式会社東芝 発光装置
JP6846913B2 (ja) * 2016-11-11 2021-03-24 日本碍子株式会社 広波長域発光素子および広波長域発光素子の作製方法
FR3068484B1 (fr) * 2017-06-29 2019-11-22 Commissariat A L'energie Atomique Et Aux Energies Alternatives Projecteur couleur a deux ecrans emissifs.
US12283794B2 (en) * 2019-10-04 2025-04-22 Cambridge Enterprise Limited Polarised emission from quantum wires in cubic GaN
CN113228309B (zh) * 2019-11-26 2022-04-29 重庆康佳光电技术研究院有限公司 发光二极管结构
JP6857263B1 (ja) * 2020-01-17 2021-04-14 浜松ホトニクス株式会社 発光体、電子線検出器、及び走査型電子顕微鏡
CN113140618B (zh) * 2021-03-31 2023-02-10 福建中晶科技有限公司 一种蓝宝石复合衬底及其制备方法
CN114583020A (zh) * 2022-02-24 2022-06-03 江苏第三代半导体研究院有限公司 一种光电器件外延结构的制备方法、外延结构及光电器件

Citations (8)

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Publication number Priority date Publication date Assignee Title
US6252261B1 (en) * 1998-09-30 2001-06-26 Nec Corporation GaN crystal film, a group III element nitride semiconductor wafer and a manufacturing process therefor
US6294440B1 (en) * 1998-04-10 2001-09-25 Sharp Kabushiki Kaisha Semiconductor substrate, light-emitting device, and method for producing the same
US20020046693A1 (en) * 1997-04-11 2002-04-25 Nichia Chemical Industries, Ltd. Nitride semiconductor growth method, nitride semiconductor substrate, and nitride semiconductor device
US6534336B1 (en) * 1999-05-21 2003-03-18 Canon Kabushiki Kaisha Production method of photoelectric conversion device, and photoelectric conversion device produced by the method
US6628249B1 (en) * 1999-11-12 2003-09-30 Sharp Kabushiki Kaisha Light emitting apparatus, method for driving the light emitting apparatus, and display apparatus including the light emitting apparatus
US6733591B2 (en) * 1998-06-18 2004-05-11 University Of Florida Research Foundation, Inc. Method and apparatus for producing group-III nitrides
US6870191B2 (en) * 2001-07-24 2005-03-22 Nichia Corporation Semiconductor light emitting device
US20050185419A1 (en) * 2003-01-24 2005-08-25 Digital Optics International Corporation High-density illumination system

Family Cites Families (9)

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Publication number Priority date Publication date Assignee Title
JP3424465B2 (ja) * 1996-11-15 2003-07-07 日亜化学工業株式会社 窒化物半導体素子及び窒化物半導体の成長方法
JP3282174B2 (ja) * 1997-01-29 2002-05-13 日亜化学工業株式会社 窒化物半導体発光素子
JP3511923B2 (ja) * 1998-12-25 2004-03-29 日亜化学工業株式会社 発光素子
JP4145437B2 (ja) * 1999-09-28 2008-09-03 住友電気工業株式会社 単結晶ＧａＮの結晶成長方法及び単結晶ＧａＮ基板の製造方法と単結晶ＧａＮ基板
JP3725382B2 (ja) * 1999-11-11 2005-12-07 株式会社東芝 半導体素子の製造方法および半導体発光素子の製造方法
JP4158519B2 (ja) * 2002-12-26 2008-10-01 住友電気工業株式会社 白色発光素子およびその製造方法
JP2005093682A (ja) * 2003-09-17 2005-04-07 Toyoda Gosei Co Ltd ＧａＮ系半導体発光素子及びその製造方法
US7348600B2 (en) * 2003-10-20 2008-03-25 Nichia Corporation Nitride semiconductor device, and its fabrication process
JP2007533164A (ja) * 2004-04-15 2007-11-15 トラスティーズ オブ ボストン ユニバーシティ テクスチャ出しされた半導体層を特徴とする光学装置

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020046693A1 (en) * 1997-04-11 2002-04-25 Nichia Chemical Industries, Ltd. Nitride semiconductor growth method, nitride semiconductor substrate, and nitride semiconductor device
US6294440B1 (en) * 1998-04-10 2001-09-25 Sharp Kabushiki Kaisha Semiconductor substrate, light-emitting device, and method for producing the same
US6733591B2 (en) * 1998-06-18 2004-05-11 University Of Florida Research Foundation, Inc. Method and apparatus for producing group-III nitrides
US6252261B1 (en) * 1998-09-30 2001-06-26 Nec Corporation GaN crystal film, a group III element nitride semiconductor wafer and a manufacturing process therefor
US6534336B1 (en) * 1999-05-21 2003-03-18 Canon Kabushiki Kaisha Production method of photoelectric conversion device, and photoelectric conversion device produced by the method
US6628249B1 (en) * 1999-11-12 2003-09-30 Sharp Kabushiki Kaisha Light emitting apparatus, method for driving the light emitting apparatus, and display apparatus including the light emitting apparatus
US6870191B2 (en) * 2001-07-24 2005-03-22 Nichia Corporation Semiconductor light emitting device
US20050185419A1 (en) * 2003-01-24 2005-08-25 Digital Optics International Corporation High-density illumination system

Also Published As

Publication number Publication date
JP2009515340A (ja) 2009-04-09
CA2627880A1 (fr) 2007-05-10
WO2007053624A2 (fr) 2007-05-10
CN101506937A (zh) 2009-08-12
EP1952449A2 (fr) 2008-08-06
EP1952449A4 (fr) 2011-06-29

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