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WO2006110645A3 - Agents nettoyants liquides au fluorure contenant des melanges de solvants polaires et non polaires destines a nettoyer des dispositifs microelectroniques a faible k - Google Patents

Agents nettoyants liquides au fluorure contenant des melanges de solvants polaires et non polaires destines a nettoyer des dispositifs microelectroniques a faible k Download PDF

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Publication number
WO2006110645A3
WO2006110645A3 PCT/US2006/013306 US2006013306W WO2006110645A3 WO 2006110645 A3 WO2006110645 A3 WO 2006110645A3 US 2006013306 W US2006013306 W US 2006013306W WO 2006110645 A3 WO2006110645 A3 WO 2006110645A3
Authority
WO
WIPO (PCT)
Prior art keywords
polar
residue
solvent mixtures
microelectronic devices
liquid cleaners
Prior art date
Application number
PCT/US2006/013306
Other languages
English (en)
Other versions
WO2006110645A2 (fr
Inventor
David W Minsek
David D Bernhard
Thomas H Baum
Original Assignee
Advanced Tech Materials
David W Minsek
David D Bernhard
Thomas H Baum
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Tech Materials, David W Minsek, David D Bernhard, Thomas H Baum filed Critical Advanced Tech Materials
Publication of WO2006110645A2 publication Critical patent/WO2006110645A2/fr
Publication of WO2006110645A3 publication Critical patent/WO2006110645A3/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
    • H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/02—Inorganic compounds
    • C11D7/04—Water-soluble compounds
    • C11D7/08—Acids
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/02—Inorganic compounds
    • C11D7/04—Water-soluble compounds
    • C11D7/10—Salts
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/28—Organic compounds containing halogen
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/36—Organic compounds containing phosphorus
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/50—Solvents
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/423—Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/426—Stripping or agents therefor using liquids only containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Detergent Compositions (AREA)

Abstract

La présente invention se rapporte à une composition et à un procédé d'élimination de liquide permettant d'éliminer les résidus post-polissage, les résidus post-gravure et/ou les résidus de revêtement antireflet inférieur (BARC) d'un dispositif microélectronique concerné. La composition d'élimination de liquide selon l'invention contient une source de fluorure et un solvant amphiphile. La composition permet une élimination à haute efficacité des résidus du dispositif microélectronique sans endommagement des espèces métalliques ou des matières diélectriques à faible k utilisées dans l'architecture du dispositif microélectronique.
PCT/US2006/013306 2005-04-11 2006-04-10 Agents nettoyants liquides au fluorure contenant des melanges de solvants polaires et non polaires destines a nettoyer des dispositifs microelectroniques a faible k WO2006110645A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US67016105P 2005-04-11 2005-04-11
US60/670,161 2005-04-11

Publications (2)

Publication Number Publication Date
WO2006110645A2 WO2006110645A2 (fr) 2006-10-19
WO2006110645A3 true WO2006110645A3 (fr) 2007-03-01

Family

ID=37087593

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2006/013306 WO2006110645A2 (fr) 2005-04-11 2006-04-10 Agents nettoyants liquides au fluorure contenant des melanges de solvants polaires et non polaires destines a nettoyer des dispositifs microelectroniques a faible k

Country Status (2)

Country Link
TW (1) TW200639595A (fr)
WO (1) WO2006110645A2 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102808190A (zh) * 2012-08-31 2012-12-05 昆山艾森半导体材料有限公司 环保型弱碱性低温去毛刺软化液及其制备方法和使用方法
CN105068388A (zh) * 2009-08-05 2015-11-18 气体产品与化学公司 用于金属基底的半水性剥离和清洁制剂及其使用方法

Families Citing this family (32)

* Cited by examiner, † Cited by third party
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US7960328B2 (en) 2005-11-09 2011-06-14 Advanced Technology Materials, Inc. Composition and method for recycling semiconductor wafers having low-k dielectric materials thereon
CN101169598A (zh) * 2006-10-27 2008-04-30 安集微电子（上海）有限公司 一种光刻胶清洗剂
US20080125342A1 (en) * 2006-11-07 2008-05-29 Advanced Technology Materials, Inc. Formulations for cleaning memory device structures
US7879783B2 (en) 2007-01-11 2011-02-01 Air Products And Chemicals, Inc. Cleaning composition for semiconductor substrates
TW200934865A (en) * 2007-11-30 2009-08-16 Advanced Tech Materials Formulations for cleaning memory device structures
US20100180914A1 (en) * 2009-01-22 2010-07-22 Electric Power Research Institute, Inc. Conductor cleaning system and method
CN103003923A (zh) 2010-07-16 2013-03-27 高级技术材料公司 用于移除蚀刻后残余物的水性清洁剂
US9238850B2 (en) 2010-08-20 2016-01-19 Advanced Technology Materials, Inc. Sustainable process for reclaiming precious metals and base metals from e-waste
SG10201508015RA (en) 2010-10-06 2015-10-29 Entegris Inc Composition and process for selectively etching metal nitrides
KR101891363B1 (ko) 2010-10-13 2018-08-24 엔테그리스, 아이엔씨. 티타늄 니트라이드 부식을 억제하기 위한 조성물 및 방법
CN102109777B (zh) * 2010-12-15 2012-08-22 绵阳艾萨斯电子材料有限公司 一种等离子显示用障壁浆料的再生液
JP5933950B2 (ja) 2011-09-30 2016-06-15 アドバンスド テクノロジー マテリアルズ，インコーポレイテッド 銅または銅合金用エッチング液
EP2764079A4 (fr) 2011-10-05 2015-06-03 Avantor Performance Mat Inc Compositions de nettoyage de substrats microélectroniques ayant une inhibition de polymère cuivre/azole
WO2013101907A1 (fr) 2011-12-28 2013-07-04 Advanced Technology Materials, Inc. Compositions et procédés pour l'attaque sélective de nitrure de titane
EP2814895A4 (fr) 2012-02-15 2015-10-07 Entegris Inc Elimination post-cmp à l'aide de compositions et procédé d'utilisation
SG10201610541UA (en) 2012-05-18 2017-01-27 Entegris Inc Composition and process for stripping photoresist from a surface including titanium nitride
CN103631101B (zh) * 2012-08-22 2018-01-09 得凯莫斯公司弗罗里达有限公司 包含含氟表面活性剂的光阻剥除剂
US9536730B2 (en) 2012-10-23 2017-01-03 Air Products And Chemicals, Inc. Cleaning formulations
KR102118964B1 (ko) 2012-12-05 2020-06-08 엔테그리스, 아이엔씨. Iii-v 반도체 물질을 세척하기 위한 조성물 및 이를 사용하는 방법
US9102901B2 (en) 2012-12-20 2015-08-11 Rohm And Haas Electronic Materials Llc Methods and compositions for removal of metal hardmasks
WO2014138064A1 (fr) 2013-03-04 2014-09-12 Advanced Technology Materials, Inc. Compositions et procédés pour graver sélectivement du nitrure de titane
EP3004287B1 (fr) 2013-06-06 2021-08-18 Entegris, Inc. Compositions et procédés pour la gravure sélective de nitrure de titane
EP3027709A4 (fr) 2013-07-31 2017-03-29 Entegris, Inc. Formulations aqueuses pour l'élimination des masques métalliques durs et des résidus de gravure présentant une compatibilité cu/w
WO2015031620A1 (fr) 2013-08-30 2015-03-05 Advanced Technology Materials, Inc. Compositions et procédés pour effectuer la gravure sélective du nitrure de titane
US10340150B2 (en) 2013-12-16 2019-07-02 Entegris, Inc. Ni:NiGe:Ge selective etch formulations and method of using same
JP6776125B2 (ja) 2013-12-20 2020-10-28 インテグリス・インコーポレーテッド イオン注入レジストの除去のための非酸化性の強酸の使用
WO2015103146A1 (fr) 2013-12-31 2015-07-09 Advanced Technology Materials, Inc. Formulations de gravure sélective de silicium et de germanium
TWI659098B (zh) 2014-01-29 2019-05-11 美商恩特葛瑞斯股份有限公司 化學機械研磨後配方及其使用方法
WO2015119925A1 (fr) 2014-02-05 2015-08-13 Advanced Technology Materials, Inc. Compositions post-cmp sans amine et leur méthode d'utilisation
US10867859B2 (en) * 2017-11-17 2020-12-15 Taiwan Semiconductor Manufacturing Co., Ltd. Methods of fabricating semiconductor devices having isolation structures with liners
WO2021205885A1 (fr) * 2020-04-09 2021-10-14 昭和電工株式会社 Composition et procédé de nettoyage de polymère adhésif
CN113667552A (zh) * 2020-05-15 2021-11-19 安集微电子科技（上海）股份有限公司 一种用于铜大马士革工艺的清洗液

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Patent Citations (1)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105068388A (zh) * 2009-08-05 2015-11-18 气体产品与化学公司 用于金属基底的半水性剥离和清洁制剂及其使用方法
CN102808190A (zh) * 2012-08-31 2012-12-05 昆山艾森半导体材料有限公司 环保型弱碱性低温去毛刺软化液及其制备方法和使用方法

Also Published As

Publication number Publication date
TW200639595A (en) 2006-11-16
WO2006110645A2 (fr) 2006-10-19

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