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WO2006016299A1 - Amplificateur integre de classe f a compensation de capacite de sortie parasite - Google Patents

Amplificateur integre de classe f a compensation de capacite de sortie parasite Download PDF

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Publication number
WO2006016299A1
WO2006016299A1 PCT/IB2005/052484 IB2005052484W WO2006016299A1 WO 2006016299 A1 WO2006016299 A1 WO 2006016299A1 IB 2005052484 W IB2005052484 W IB 2005052484W WO 2006016299 A1 WO2006016299 A1 WO 2006016299A1
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WO
WIPO (PCT)
Prior art keywords
output
compensation circuit
input
class
arrangement according
Prior art date
Application number
PCT/IB2005/052484
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English (en)
Inventor
Igor Blednov
Original Assignee
Koninklijke Philips Electronics N.V.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips Electronics N.V. filed Critical Koninklijke Philips Electronics N.V.
Publication of WO2006016299A1 publication Critical patent/WO2006016299A1/fr

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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/56—Modifications of input or output impedances, not otherwise provided for
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/193—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/217—Class D power amplifiers; Switching amplifiers
    • H03F3/2171—Class D power amplifiers; Switching amplifiers with field-effect devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/217—Class D power amplifiers; Switching amplifiers
    • H03F3/2176—Class E amplifiers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/10—Integrated device layouts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/4813—Connecting within a semiconductor or solid-state body, i.e. fly wire, bridge wire
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/30107—Inductance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance

Definitions

  • the present invention relates to an integrated F-class amplifier arrangement and a method of compensating of input and output parasitic capacitance of a semiconductor power devices at higher harmonic frequencies in such a F-class amplifier arrangement.
  • the output voltage or current waveform should only contain higher odd-order or even order harmonics while the current waveform should only contain higher even-order or odd harmonics at proper phase arrangement.
  • the parasitic capacitance at the drain or the collector of a transistor prevents the required high impedance seen by the transistor output at higher even or odd harmonics of the fundamental signal. This is in particular important for the so-called voltage peaking at even or odd harmonics.
  • the best F-class efficiency can be realized for devices with a frequency fo «f_max as the parasitic capacitance C ou t has relatively small negative effect on device performance in F-class and therefore negligible. Accordingly, a sufficient number and sufficient power of harmonics can be used.
  • the output current wave of the device can be improved by respective input signal shaping which requires a specific input impedance response at the fundamental signal and its harmonic signals.
  • an integrated F-class amplifier arrangement is provided with a semiconductor power device and an output compensation circuit for compensating a parasitic output capacitance of the power device at fundamental frequency and at least one odd or even multiple thereof.
  • this measure serves to suppress the power of higher harmonics of the fundamental frequency at the output of the F-class amplifier arrangement.
  • the power of undesired harmonics can be suppressed in two different ways: by providing very high or very low impedance to the output of the power transistor at frequency of specific harmonic. In this way the one component of output power of the harmonics is being eliminated, i.e. the voltage or the current, depending on the impedance presented to the device output- drain or collector.
  • the suggested F-class output circuit is providing a high impedance for all odd harmonics and a very low impedance for all even harmonics or the way around. It is possible due to compensation of parasitic Cout of power device at several required harmonic (even or odd), where high impedance is required. Due to the properties of this circuit, it also at the same time provides a very low impedance or short circuit for all other harmonics.
  • the inductors of the output compensation circuit may be at least partly made of bond wires. Again, this provides the advantage of reduced power loss, especially at higher harmonics of the fundamental up to 15GHz.
  • the invention also relates to an output compensation circuit for compensating the parasitic output capacitance of a semiconductor power device in an F-class amplifier stage.
  • the output compensating circuit comprises a series inductances and parallel capacitances or equivalents thereof.
  • the invention furthermore relates to a method for amplifying an input signal in a F-class amplifier arrangement.
  • the parasitic output capacitance of the first amplifying stage is compensated at fundamental frequency and at least one odd multiple thereof.
  • the invention is based on the idea to provide a compensation circuit connected to the input/gate/base and/or output/drain/collector of RF power transistor (in a F-class amplifier) having parasitic input and/or output capacitance.
  • the compensation circuits provide the parallel resonance with these parasitic capacitances at fundamental fo and parallel resonance or "short circuit" at its odd harmonics 3fo, 5fo etc and the "short circuit” or parallel resonance at even harmonics 2fo, 4fo etc.
  • the compensation circuit helps to achieve a required output voltage or current wave shape by proper phase of every each specific harmonic.
  • the compensation circuit may consist of series inductances and parallel capacitances or equivalent made of distributed transmission lines.
  • the compensation circuit comprises equivalents of the inductance and parallel capacitances made of distributed transmission lines. IfRF power devices are used in F-class amplifiers the parasitic output capacitance should be neutralized for those harmonics where the voltage peaking is required, i.e. which may be odd or even harmonics, depending to the which type of F-class amplification is required.
  • the F-class operation is provided by peaking the odd or even harmonics of the voltage signal and the even or odd harmonics of the current signal by a compact and effective circuit when applied to the input and/or output of the power device.
  • the shape of the output current signal of the device corresponds to a half sine- wave and the shape of the output voltage signal corresponds to a sine- wave with a flattened top as well as bottom sides.
  • the shape of the output voltage wave signal approaches to a rectangular shape.
  • a compensation circuitry at the input side of the power device should be able to provide a reduced rise and fall time of the output current.
  • MOS, FET and LDMOST devices such a compensation circuit must provide a rectangular-like shape of the voltage across the input capacitance C gs with emphasized voltage of all odd harmonics.
  • the output current pulse may result in a minimal rise and fall time. Accordingly, the conditions for F-class amplification are provided.
  • a similar input compensation circuit as described for the output capacitance will result in high input impedance at odd harmonics and peaking of the odd harmonics and rectangular voltage across input of the device. Thus, a higher efficiency performance can be delivered .
  • the compensation circuit may be connected to input/gate/base and/or output/drain/collector of RF power device.
  • Fig. 1 shows a circuit diagram of an amplifier arrangement according to a preferred embodiment
  • Fig. 2 shows a harmonic current distribution in the circuit diagram of an amplifier arrangement according to Fig. 1;
  • Fig. 3 shows a circuit diagram of an amplifying arrangement according to a second embodiment
  • Fig. 4 shows a frequency characteristics of the real and imaginary part of the impedance of an output compensation circuit with an output parasitic capacitance as seen by power device;
  • Fig. 5 shows a circuit diagram of the output part of the amplifying arrangement according to a third embodiment
  • Fig. 6 shows a frequency characteristics of the impedance of the output compensation circuit of Fig. 5;
  • Figs. 7 A and 7B show a circuit diagram of the amplifying arrangement of Fig. 5, and an implementation example of the circuit diagram of Fig. 7 A;
  • Fig. 8 shows a graph of the output power and power added efficiency versus input power
  • Fig. 9 shows a graph of the one tone output power and IMD power levels vs input power of the F-class amplifier versus AB-class amplifier
  • Fig. 1OA shows another embodiment of an output network for an integrated F- class type amplifier with an F-class circuit
  • Fig. 1OB shows an implementation of the circuit of Fig. 1OA.
  • MMIC Monitoring Microwave Integrated Circuit
  • RF radio frequency
  • power amplifiers are used in transmitter stages, where the modulated RF signal is amplified before being supplied to the antenna for wireless transmission. These power amplifiers are the most power consuming part of these RF transceivers.
  • Using the F- class type amplifier arrangement in Doherty type amplifier can provide a higher power efficiency of transmitter.
  • a F-class amplifier structure is used, where circuit size is reduced for integration by using lumped elements to replace distributed circuit like power splitters and transmission lines.
  • inductive coupling is used to increase inductance values and output parasitic capacitances are used as a part of lumped element analog transmission lines.
  • bond wires are suggested to be used as inductances. Bondwires provide very high parasitic parallel resonance frequency, e.g. above 15 GHz , as lumped inductance suitable for building a wideband lumped element equivalent of an RF transmission line.
  • the F-class amplifier may comprise a power device in bipolar technology, MOS (Metal Oxide Semiconductor) technology, LDMOST (Lateral Defused Metal Oxide Semiconductor Transistor) technology, FET (Field Effect Transistor) technology, or HBT (Hcterojunction Bipolar Transistor) technology.
  • MOS Metal Oxide Semiconductor
  • LDMOST Longal Defused Metal Oxide Semiconductor Transistor
  • FET Field Effect Transistor
  • HBT Highcterojunction Bipolar Transistor
  • the LDMOST technology provides high gain and good linearity compared to the other semiconductor technologies.
  • complex modulation schemes like WCDMA, make further device improvements for linearity still very desirable.
  • HBT MMIC power devices may be used, where the heterojunction increases breakdown voltage and minimizes leakage current between junctions.
  • Fig. 1 shows a circuit diagram of an amplifier arrangement according to a preferred embodiment.
  • the amplifier arrangement comprises an input compensation circuit ICC, an F-class amplifier 100 and an output compensation circuit OCC.
  • the F-class amplifier 100 comprises a parasitic output capacitance Cds.
  • the input signal In is received by the input compensation circuit ICC and the output compensation circuit OCC is connected to the output of the amplifier 100.
  • the input compensation circuit ICC as well as the output compensation circuit OCC each comprise a first inductor Ll, a second inductor L2 and a second capacitor C2 in series connection with a first capacitor Cl connected in parallel to the junction point of the first and second inductor Ll, L2 and the ground or reference potential.
  • the input compensation circuit as well as the output compensation circuit both serve as compensation for the parasitic output capacitor Cds. It should be noted that the angle between Vds and Id depends on a combination of the Zi oa d and the resonance frequency of the Internal Shunt Inductance (INSHIN) circuit.
  • Fig. 2 a circuit diagram of an F-class amplifier arrangement according to Fig. 1 is shown.
  • the circuit diagram of Fig. 2 substantially corresponds to the circuit diagram of Fig. 1.
  • the frequencies, for which the parasitic capacitance Cgs, Cds are compensated by the parallel resonance circuit in the input compensation circuit ICC and in the output compensation circuit OCC are defined.
  • the current I ⁇ will travel mostly through the parasitic capacitance Cds, the first and second inductance Ll, L2 and the second capacitor C2.
  • the current Ifo +2 fo will mainly pass through the parasitic capacitance Cds, the first inductance Ll and the first capacitor Cl. Therefore, this current will be defined mainly by these three elements.
  • Fig. 3 shows a circuit diagram of an amplifying arrangement according to a second embodiment.
  • the circuit diagram of the third embodiment substantially corresponds to the circuit diagram of the preferred embodiment according to Fig. 1 and Fig. 2.
  • the circuit diagram according to the third embodiment is shown for the case when fo «f llldX of the RF power device. Accordingly, more higher order harmonics may be used for better shaping of the output voltage and current waves. Therefore, the output compensation circuit OCC now comprises a first, second and third inductance Ll, L2, L3 and a third capacitor C3 in series connection, while the first capacitor Cl is connected in parallel between the junction point of the first and second inductor Ll, L2 and ground or reference potential.
  • the second capacitor C2 is arranged in parallel between the junction point of the second and third inductor L2, L3 and ground or reference potential.
  • the current Ifo will flow through the parasitic capacitance Cds, the first, second and third inductor Ll, L2, L3 and the third capacitor C3.
  • the current with the 2fo harmonics will flow through the parasitic capacitance Cds, the first and second inductor and the second capacitor C2.
  • the current for the 4fO harmonics will flow through the capacitance Cds, the first inductor Ll and the first capacitor Cl.
  • Fig. 4 shows the frequency characteristic of the real (upper positive curve) and imaginary (lower positive and negative curve) part of the impedance Zl presented by the output compensation circuit OCC to the transistor output according to the second embodiment of Fig. 8. It can be seen from Fig. 4 that the effect of the parasitic output capacitance Cds is neutralized or compensated at the odd harmonics fo, 3fo, 5fo. However, the "short" circuit characteristics are maintained at even harmonics (2fo, 4fo and 6fo).
  • An adaptation to the load impedance Zl e.g. 50 Ohm
  • the load impedance Zl is provided selectively at the fundamental frequency fo and the odd-fold of the fundamental frequency 3fo, 5fo. At these frequency points, the imaginary part of the impedance is zero.
  • both real part and imaginary part of the impedance are substantially zero, which corresponds to a short circuit, so that the even- fold fundamental frequency harmonics power is blocked by the compensation circuit OCC.
  • This arrangement provides a rejection of even- fold 2fo, 4fo harmonics power at the output of F- lass amplifier which are the root cause of inter- modulation distortions.
  • a compensation of output capacitance of RF power devices at 3fo, 5fo together with ⁇ /4 line or lumped element analog, attached between device output and load provide a high impedance around 3fo, 5fo and voltage wave shape at transistor collector or drain.
  • Fig. 5 shows a circuit diagram of the output part of the amplifying arrangement according to a third embodiment.
  • This circuit diagram is based on the output part of the circuit diagram of Fig. 3. It also comprises three inductance in series Ll 1, L12, L19 to a third capacitor Cl 1, while a first capacitor C6 is connected in parallel between the junction point of the first and second inductor L12, L19 and ground or reference potential and the second capacitor C7 is connected in parallel between the junction point of the second and third inductor L12, Ll 9 and ground or reference potential.
  • the circuit diagram also comprises an emphasizing circuit EC and a load Ld connected in parallel to the output compensation circuit OCC.
  • the emphasizing circuit EC comprises two inductors L15, L16 and two capacitors C4, C5.
  • the two inductors L15, L16 are connected in parallel with a capacitor C5 coupled between respective first ends of the two inductors L15, L16.
  • the second ends of the inductors Ll 5, Ll 6 form a junction point.
  • the capacitor C4 is connected between this junction point and ground or reference potential.
  • This emphasizing circuit EC serves to emphasize the higher odd harmonics of fo.
  • Fig. 6 shows a frequency characteristic of the real and imaginary part of the impedance Zl of the output compensation circuit OCC with an additional ⁇ /4 line between the output compensation circuit OCC and the load.
  • Fig. 7A shows a circuit diagram of the amplifying arrangement of Fig. 5.
  • Fig. 7B shows an implementation example of the circuit diagram of Fig. 7A.
  • the circuit diagram of the output compensation circuit and the emphasizing circuit EC is shown in Figs. 7A and in Fig. 7B the implementation of the lumped elements is shown.
  • the input compensation circuit ICC is shown as circuit diagram in Fig. 7 A and as implementation in Fig. 7B.
  • the amplifier 100 is embodied as a MOSFET amplifier.
  • the output compensation circuit OCC and the emphasizing circuit EC are designed as a lumped element matching circuit for the output of F-class amplifier.
  • the input compensation circuit ICC forms as input LC pre-match circuit.
  • Fig. 8 shows a graph of the output power and power added efficiency versus input power for F-class and AB-class amplifiers.
  • Fig. 9 shows a graph of the output power and IMD power level of F-class versus AB-class amplifier.
  • Fig. 1OA shows another embodiment of an output network for an integrated F- class type amplifier with an F-class circuit.
  • Fig. 1OB shows a circuit implementation of the output network of Fig. 1OA for microwave or millimeter wave frequency band amplifiers.
  • the input In of the is connected to the active die area AA of the power device in Fig. 1OA.
  • the inductors L2 to L5 are implemented as bond wires.
  • the substrate Sub may be Si, GaAs etc.
  • the main difference regarding the implementation of Fig. 1OB compared to the implementation of Fig. 7A and 7B is the first inductor Ll. In Fig. 7B this inductor Ll is implemented as a bond wire while in Fig. 1OB the inductor is embedded in the substrate.
  • L4, L5 and C4 form the emphasizing circuit.
  • a similar design can be used for input parasitic capacitance compensation, because its value is usually higher and requires even smaller value of compensation inductance required.
  • a lumped element compensation circuit comprising a series inductance and parallel capacitance connected to the input/gate and/or output/drain collector of a RF power transistor with parasitic input capacitance and parasitic output capacitance.
  • a parallel resonance of these parasitic capacitances at the fundamental frequency fo and its odd harmonics 3fo, 5fo and the RF "short circuit" at even harmonics 2fo, 4fo is provided.
  • the output circuitry with the compensation circuit comprises distributed or lumped elements analog of the transmission line, wherein the output circuitry is connected between the output of the transistor and the transistor load.
  • a simple, compact and effective circuitry i.e. the above compensation circuit, can be applied to the input and output of power device providing the F-class operation by peaking the even or odd voltage harmonics and odd or even current harmonics or the way around if required.
  • the device's output current shape approaches the half sine- wave or rectangular shape and the output voltage has a shape approaching a rectangular shape with flatten top and bottom sides or half-sine wave shape, which in ideal case at fo « f_max becomes of rectangular shape.
  • Input circuitry should provide a conditions for decreasing of "Rise" and "Fall" time of output current.
  • the compensation circuit for input capacitance must maximize the input impedance and RF voltage at fo and all odd harmonics, providing required harmonic's phase, anti-phase or 180 degree between fundamental and 3 rd harmonic, for example. Due to the fact that LDMOST devices usually are operating at frequencies which are close to the f_max like 8 GHz, only a few first harmonics 2fo, 3fo, 4fo can be used for F-class operation. So, better efficiency in F- class operation can be achieved, if in this case the input signal is of "rectangular" voltage shape. Than output current pulse will have minimal possible “rise” and “fall” time, providing better conditions for F-class mode amplifications. With similar compensation circuit for output parasitic capacitance, the transistor output will see the load with high impedance at odd or even, if required harmonics of fundamental, which will peak the output voltage or current at odd or even harmonics, delivering a higher efficiency.

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)

Abstract

L'invention concerne un agencement d'amplificateur intégré de classe F comprenant un dispositif de puissance (100) semi-conducteur, destiné à recevoir un premier signal (In) et à amplifier ce premier signal (In) afin de générer un premier signal amplifié. Un étage d'amplificateur (100) de classe F comprend un circuit de compensation de sortie (OCC) permettant de compenser une capacité de sortie parasite du premier étage d'amplificateur à une fréquence fondamentale et au moins un multiple pair ou impair de celle-ci.
PCT/IB2005/052484 2004-08-09 2005-07-25 Amplificateur integre de classe f a compensation de capacite de sortie parasite WO2006016299A1 (fr)

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EP04103835.7 2004-08-09
EP04103835 2004-08-09

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Cited By (21)

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WO2008062371A2 (fr) * 2006-11-23 2008-05-29 Nxp B.V. Dispositif amplificateur intégré de type doherty présentant une efficacité haute puissance
EP2001128A1 (fr) * 2007-04-12 2008-12-10 Kabushiki Kaisha Toshiba Circuit amplificateur de puissance de classe F
WO2009027916A2 (fr) * 2007-08-29 2009-03-05 Nxp B.V. Amplificateur de doherty intégré
WO2007122586A3 (fr) * 2006-04-26 2009-09-11 Nxp B.V. Amplificateur r.f. intégré haute puissance
EP2388815A1 (fr) * 2010-05-10 2011-11-23 Nxp B.V. Boîtier de transistor
US8708955B2 (en) 2008-06-02 2014-04-29 Loma Vista Medical, Inc. Inflatable medical devices
EP2802075A1 (fr) * 2013-05-07 2014-11-12 Nxp B.V. Dispositif amplificateur RF semi-conducteur à double bande
US9503025B2 (en) 2014-07-11 2016-11-22 Skyworks Solutions, Inc. Power amplifier with termination circuit and resonant circuit
EP3113360A4 (fr) * 2014-03-21 2017-03-08 Huawei Technologies Co., Ltd. Circuit d'amplification de puissance et émetteur
US9592119B2 (en) 2010-07-13 2017-03-14 C.R. Bard, Inc. Inflatable medical devices
EP3160044A1 (fr) * 2015-10-21 2017-04-26 NXP USA, Inc. Transistors de puissance rf avec des circuits d'adaptation d'impédance et leurs procédés de fabrication
EP3082259A4 (fr) * 2013-12-13 2017-11-15 ZTE Corporation Amplificateur de puissance radiofréquence, station de base et procédé de réglage d'impédance
EP3337037A1 (fr) * 2016-12-15 2018-06-20 NXP USA, Inc. Amplificateurs doherty et modules amplificateurs comportant des circuits d'inductance de dérivation affectant la longueur de la ligne de transmission entre les sorties de porteuse et d'amplificateur
CN108962124A (zh) * 2018-08-17 2018-12-07 京东方科技集团股份有限公司 一种驱动电路及驱动方法、x射线探测装置
US10188436B2 (en) 2010-11-09 2019-01-29 Loma Vista Medical, Inc. Inflatable medical devices
US10188273B2 (en) 2007-01-30 2019-01-29 Loma Vista Medical, Inc. Biological navigation device
US10284146B2 (en) 2016-12-01 2019-05-07 Nxp Usa, Inc. Amplifier die with elongated side pads, and amplifier modules that incorporate such amplifier die
CN110021583A (zh) * 2017-12-22 2019-07-16 英飞凌科技股份有限公司 用于晶体管的补偿设备
US10381984B2 (en) 2016-12-15 2019-08-13 Nxp Usa, Inc. Amplifiers and amplifier modules with shunt inductance circuits that include high-Q capacitors
US10432152B2 (en) 2015-05-22 2019-10-01 Nxp Usa, Inc. RF amplifier output circuit device with integrated current path, and methods of manufacture thereof
US10771019B2 (en) 2010-04-22 2020-09-08 Nxp Usa, Inc. RF power transistor circuits

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EP3082259A4 (fr) * 2013-12-13 2017-11-15 ZTE Corporation Amplificateur de puissance radiofréquence, station de base et procédé de réglage d'impédance
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US10432152B2 (en) 2015-05-22 2019-10-01 Nxp Usa, Inc. RF amplifier output circuit device with integrated current path, and methods of manufacture thereof
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US10284146B2 (en) 2016-12-01 2019-05-07 Nxp Usa, Inc. Amplifier die with elongated side pads, and amplifier modules that incorporate such amplifier die
US10284147B2 (en) 2016-12-15 2019-05-07 Nxp Usa, Inc. Doherty amplifiers and amplifier modules with shunt inductance circuits that affect transmission line length between carrier and peaking amplifier outputs
US10381984B2 (en) 2016-12-15 2019-08-13 Nxp Usa, Inc. Amplifiers and amplifier modules with shunt inductance circuits that include high-Q capacitors
EP3337037A1 (fr) * 2016-12-15 2018-06-20 NXP USA, Inc. Amplificateurs doherty et modules amplificateurs comportant des circuits d'inductance de dérivation affectant la longueur de la ligne de transmission entre les sorties de porteuse et d'amplificateur
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