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WO2006012112A3 - Electrochemical plating cell with an auxiliary electrode in an isolated anolyte compartment - Google Patents

Electrochemical plating cell with an auxiliary electrode in an isolated anolyte compartment Download PDF

Info

Publication number
WO2006012112A3
WO2006012112A3 PCT/US2005/021894 US2005021894W WO2006012112A3 WO 2006012112 A3 WO2006012112 A3 WO 2006012112A3 US 2005021894 W US2005021894 W US 2005021894W WO 2006012112 A3 WO2006012112 A3 WO 2006012112A3
Authority
WO
WIPO (PCT)
Prior art keywords
volume
plating
auxiliary electrode
substrate
catholyte
Prior art date
Application number
PCT/US2005/021894
Other languages
French (fr)
Other versions
WO2006012112A2 (en
Inventor
Nicolay Kovarsky
Anzhong Chang
Saravjeet Singh
You Wang
John O Dukovic
Original Assignee
Applied Materials Inc
Nicolay Kovarsky
Anzhong Chang
Saravjeet Singh
You Wang
John O Dukovic
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc, Nicolay Kovarsky, Anzhong Chang, Saravjeet Singh, You Wang, John O Dukovic filed Critical Applied Materials Inc
Priority to KR1020077002269A priority Critical patent/KR101248179B1/en
Priority to JP2007519279A priority patent/JP2008504444A/en
Publication of WO2006012112A2 publication Critical patent/WO2006012112A2/en
Publication of WO2006012112A3 publication Critical patent/WO2006012112A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/001—Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/002—Cell separation, e.g. membranes, diaphragms
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D21/00—Processes for servicing or operating cells for electrolytic coating
    • C25D21/16—Regeneration of process solutions
    • C25D21/22—Regeneration of process solutions by ion-exchange
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76871—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers
    • H01L21/76873—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers for electroplating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Electrochemistry (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Sustainable Development (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

An apparatus and method for plating a metal layer onto a substrate is provided. A catholyte volume is positioned to receive a substrate for plating. An anolyte volume having one or more anode segments positioned therein is ionically separated from the catholyte volume. An auxiliary volume having an auxiliary electrode positioned therein is provided to be electrically isolated from the anolyte fluid volume and in ionic communication with the catholyte volume. A method of plating includes a first stage of plating a thin metal seed uniformly in the center and near the edges of the substrate by providing a current pulse from two power supplies which are in reverse electrical polarity with one anode segment and the auxiliary electrode. Thereafter, gap filling of features and bulk metal plating are performed by applying a second current pulse to all anode segments.
PCT/US2005/021894 2004-06-28 2005-06-20 Electrochemical plating cell with an auxiliary electrode in an isolated anolyte compartment WO2006012112A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
KR1020077002269A KR101248179B1 (en) 2004-06-28 2005-06-20 Electrochemical plating cell with an auxiliary electrode in an isolated anolyte compartment
JP2007519279A JP2008504444A (en) 2004-06-28 2005-06-20 Electrochemical plating cell with auxiliary electrode in isolated anolyte compartment

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/880,103 US20050284751A1 (en) 2004-06-28 2004-06-28 Electrochemical plating cell with a counter electrode in an isolated anolyte compartment
US10/880,103 2004-06-28

Publications (2)

Publication Number Publication Date
WO2006012112A2 WO2006012112A2 (en) 2006-02-02
WO2006012112A3 true WO2006012112A3 (en) 2006-06-22

Family

ID=35427602

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2005/021894 WO2006012112A2 (en) 2004-06-28 2005-06-20 Electrochemical plating cell with an auxiliary electrode in an isolated anolyte compartment

Country Status (5)

Country Link
US (1) US20050284751A1 (en)
JP (1) JP2008504444A (en)
KR (1) KR101248179B1 (en)
TW (1) TW200606283A (en)
WO (1) WO2006012112A2 (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ATE509144T1 (en) * 2006-12-29 2011-05-15 Rena Gmbh KIT FOR PRODUCING A PROCESS REACTOR FOR THE FORMATION OF METALLIC LAYERS ON ONE OR SEVERAL SUBSTRATES
US7842173B2 (en) * 2007-01-29 2010-11-30 Semitool, Inc. Apparatus and methods for electrochemical processing of microfeature wafers
WO2010104004A1 (en) * 2009-03-10 2010-09-16 オルガノ株式会社 Ion adsorption module and method of treating water
US8508018B2 (en) * 2010-09-24 2013-08-13 Intel Corporation Barrier layers
TWI550139B (en) * 2011-04-04 2016-09-21 諾菲勒斯系統公司 Electroplating apparatus for tailored uniformity profile
AU2017295870B2 (en) 2016-07-13 2022-04-28 Iontra Inc Electrochemical methods, devices and compositions
CN113423874B (en) * 2018-12-28 2024-03-15 盛美半导体设备(上海)股份有限公司 Electroplating device and electroplating method
CN115896904B (en) * 2023-03-09 2023-05-30 苏州智程半导体科技股份有限公司 Wafer electroplating chamber structure

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020053509A1 (en) * 1996-07-15 2002-05-09 Hanson Kyle M. Processing tools, components of processing tools, and method of making and using same for electrochemical processing of microelectronic workpieces
US20040000488A1 (en) * 2002-06-28 2004-01-01 Applied Materials, Inc. CU ECP planarization by insertion of polymer treatment step between gap fill and bulk fill steps
US20040007467A1 (en) * 2002-05-29 2004-01-15 Mchugh Paul R. Method and apparatus for controlling vessel characteristics, including shape and thieving current for processing microfeature workpieces

Family Cites Families (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4466864A (en) * 1983-12-16 1984-08-21 At&T Technologies, Inc. Methods of and apparatus for electroplating preselected surface regions of electrical articles
US6149781A (en) * 1994-01-10 2000-11-21 Forand; James L. Method and apparatus for electrochemical processing
US5556379A (en) * 1994-08-19 1996-09-17 Lifenet Research Foundation Process for cleaning large bone grafts and bone grafts produced thereby
US5620581A (en) * 1995-11-29 1997-04-15 Aiwa Research And Development, Inc. Apparatus for electroplating metal films including a cathode ring, insulator ring and thief ring
US6570886B1 (en) * 1997-06-19 2003-05-27 Alcatel Time slot management method and a main station and substation realizing such a method
US5883762A (en) * 1997-03-13 1999-03-16 Calhoun; Robert B. Electroplating apparatus and process for reducing oxidation of oxidizable plating anions and cations
US6228231B1 (en) * 1997-05-29 2001-05-08 International Business Machines Corporation Electroplating workpiece fixture having liquid gap spacer
US5972192A (en) * 1997-07-23 1999-10-26 Advanced Micro Devices, Inc. Pulse electroplating copper or copper alloys
US6004440A (en) * 1997-09-18 1999-12-21 Semitool, Inc. Cathode current control system for a wafer electroplating apparatus
AU5907798A (en) * 1997-09-30 1999-04-23 Semitool, Inc. Electroplating system having auxiliary electrode exterior to main reactor chamber for contact cleaning operations
US6090711A (en) * 1997-09-30 2000-07-18 Semitool, Inc. Methods for controlling semiconductor workpiece surface exposure to processing liquids
US6027631A (en) * 1997-11-13 2000-02-22 Novellus Systems, Inc. Electroplating system with shields for varying thickness profile of deposited layer
US6126798A (en) * 1997-11-13 2000-10-03 Novellus Systems, Inc. Electroplating anode including membrane partition system and method of preventing passivation of same
US6179983B1 (en) * 1997-11-13 2001-01-30 Novellus Systems, Inc. Method and apparatus for treating surface including virtual anode
US6156167A (en) * 1997-11-13 2000-12-05 Novellus Systems, Inc. Clamshell apparatus for electrochemically treating semiconductor wafers
WO1999041434A2 (en) * 1998-02-12 1999-08-19 Acm Research, Inc. Plating apparatus and method
US6197181B1 (en) * 1998-03-20 2001-03-06 Semitool, Inc. Apparatus and method for electrolytically depositing a metal on a microelectronic workpiece
US6565729B2 (en) * 1998-03-20 2003-05-20 Semitool, Inc. Method for electrochemically depositing metal on a semiconductor workpiece
TW593731B (en) * 1998-03-20 2004-06-21 Semitool Inc Apparatus for applying a metal structure to a workpiece
EP0991795B1 (en) * 1998-04-21 2006-02-22 Applied Materials, Inc. Electro-chemical deposition system and method of electroplating on substrates
US6071388A (en) * 1998-05-29 2000-06-06 International Business Machines Corporation Electroplating workpiece fixture having liquid gap spacer
US6395152B1 (en) * 1998-07-09 2002-05-28 Acm Research, Inc. Methods and apparatus for electropolishing metal interconnections on semiconductor devices
US6080291A (en) * 1998-07-10 2000-06-27 Semitool, Inc. Apparatus for electrochemically processing a workpiece including an electrical contact assembly having a seal member
US6497801B1 (en) * 1998-07-10 2002-12-24 Semitool Inc Electroplating apparatus with segmented anode array
US6248222B1 (en) * 1998-09-08 2001-06-19 Acm Research, Inc. Methods and apparatus for holding and positioning semiconductor workpieces during electropolishing and/or electroplating of the workpieces
US7070686B2 (en) * 2000-03-27 2006-07-04 Novellus Systems, Inc. Dynamically variable field shaping element
US6080289A (en) * 1998-10-28 2000-06-27 International Business Machines Corporation Electroplating apparatus with self-cleaning contacts
US6497800B1 (en) * 2000-03-17 2002-12-24 Nutool Inc. Device providing electrical contact to the surface of a semiconductor workpiece during metal plating
DE19901383A1 (en) * 1999-01-15 2000-07-20 Knoll Ag Process for the preparation of different solid dosage forms
CN1217034C (en) * 1999-04-13 2005-08-31 塞米用具公司 Workpiece processor having processing chamber with improved processing fluid flow
US6916412B2 (en) * 1999-04-13 2005-07-12 Semitool, Inc. Adaptable electrochemical processing chamber
US6547937B1 (en) * 2000-01-03 2003-04-15 Semitool, Inc. Microelectronic workpiece processing tool including a processing reactor having a paddle assembly for agitation of a processing fluid proximate to the workpiece
US6231743B1 (en) * 2000-01-03 2001-05-15 Motorola, Inc. Method for forming a semiconductor device
US6562204B1 (en) * 2000-02-29 2003-05-13 Novellus Systems, Inc. Apparatus for potential controlled electroplating of fine patterns on semiconductor wafers
US6482307B2 (en) * 2000-05-12 2002-11-19 Nutool, Inc. Method of and apparatus for making electrical contact to wafer surface for full-face electroplating or electropolishing
JP2001316887A (en) * 2000-05-08 2001-11-16 Tokyo Electron Ltd Plating equipment
US6527920B1 (en) * 2000-05-10 2003-03-04 Novellus Systems, Inc. Copper electroplating apparatus
US6569927B1 (en) * 2000-10-06 2003-05-27 Uniroyal Chemical Company, Inc. Thermoplastic resins stabilized by blends of sterically hindered phenols, secondary amines, and lactones
JP3831345B2 (en) * 2002-02-14 2006-10-11 日本エレクトロプレイテイング・エンジニヤース株式会社 Wafer plating equipment
US20030159921A1 (en) * 2002-02-22 2003-08-28 Randy Harris Apparatus with processing stations for manually and automatically processing microelectronic workpieces

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020053509A1 (en) * 1996-07-15 2002-05-09 Hanson Kyle M. Processing tools, components of processing tools, and method of making and using same for electrochemical processing of microelectronic workpieces
US20040007467A1 (en) * 2002-05-29 2004-01-15 Mchugh Paul R. Method and apparatus for controlling vessel characteristics, including shape and thieving current for processing microfeature workpieces
US20040000488A1 (en) * 2002-06-28 2004-01-01 Applied Materials, Inc. CU ECP planarization by insertion of polymer treatment step between gap fill and bulk fill steps

Also Published As

Publication number Publication date
KR20070027753A (en) 2007-03-09
KR101248179B1 (en) 2013-03-27
JP2008504444A (en) 2008-02-14
WO2006012112A2 (en) 2006-02-02
US20050284751A1 (en) 2005-12-29
TW200606283A (en) 2006-02-16

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