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WO2006011747A1 - Composition aqueuse de decapage de resist - Google Patents

Composition aqueuse de decapage de resist Download PDF

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Publication number
WO2006011747A1
WO2006011747A1 PCT/KR2005/002429 KR2005002429W WO2006011747A1 WO 2006011747 A1 WO2006011747 A1 WO 2006011747A1 KR 2005002429 W KR2005002429 W KR 2005002429W WO 2006011747 A1 WO2006011747 A1 WO 2006011747A1
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WO
WIPO (PCT)
Prior art keywords
hydroxide
weight
stripper composition
resist stripper
resist
Prior art date
Application number
PCT/KR2005/002429
Other languages
English (en)
Inventor
Kwang-Yong Lee
Woong Kim
Hyuk-Jin Cha
Won-Su Byeon
Yong-Man Jeong
Choul-Kyu Lim
Nak-Chil Jung
Original Assignee
Samyangems Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samyangems Co., Ltd. filed Critical Samyangems Co., Ltd.
Publication of WO2006011747A1 publication Critical patent/WO2006011747A1/fr

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D9/00—Chemical paint or ink removers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/032—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
    • G03F7/033—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders the binders being polymers obtained by reactions only involving carbon-to-carbon unsaturated bonds, e.g. vinyl polymers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/426—Stripping or agents therefor using liquids only containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

Definitions

  • the present invention relates to aqueous resist stripper composition capable of removing a cured resist, and more particularly to aqueous resist stripper composition capable of being used to regenerate a substrate by stripping a resist from a resist-coated substrate such as a color filter substrate or a TFT substrate.
  • a color TFT-LCD is manufactured in several steps of forming, on a transparent substrate such as a glass, a color filter forming a black matrix resin and a pixel consisting of red (R), green (G) and blue (B); forming on the color filter a transparent conducting film as an electrode using a sputtering method; forming an alignment layer on the transparent conducting film; and filling a liquid crystal into the LCD.
  • the resist has been widely used to form patterns of the color TFT-LCD such as an overcoat, a photo spacer, a color filter, a black matrix, etc.
  • patterns of the color TFT-LCD such as an overcoat, a photo spacer, a color filter, a black matrix, etc.
  • it was very difficult to remove the various resists such as an epoxy-based, epoxy acrylate-based, acrylate-based UV overcoat and a thermal overcoat, a photo spacer resist, a color filter resist, a black matrix resin and resists used in IPA and MVA modes.
  • the conventional resist stripper composition has a problem that a poor color filter substrate or a poor TFT substrate with the incorrect pattern is wasted without undergoing regeneration processes such as a repair and regeneration due to absence of solvents for effectively removing a large quantity of the cured resist from the substrate.
  • U.S.A. Patent Nos. 5,091,103, 5,308,745, 5,102,777, 5,597,678 disclose a resist stripper including N-methylpyrrolidone, alkylene glycol ether and l,3-dimethyl-2-imidazolidinone for stripping a cross-linked photoresist film.
  • the stripper has a problem that it shows an insufficient solubility to remove the color filter resist.
  • Korean Patent Publication No. 2003-2664 discloses aqueous stripper composition for a color filter including (a) the group consisting of inorganic alkaline hydroxide, alkylammonium hydroxide, alkylarylammonium hydroxide, (b) alkylene glycol ether, (c) aqueous amine compound, and (d) water.
  • the aqueous stripper has a problem that a working time increases in the re- work process since a stripping rate is slow for a thermal overcoat. Disclosure of Invention Technical Problem
  • the present invention is designed to solve the problems of the prior art, and therefore it is an object of the present invention to provide aqueous resist stripper composition for easily and simply removing a variety of resists which are generated during the process of manufacturing TFT-LCD but not easily removed by the con ⁇ ventional methods, the resists selected from the group consisting of an epoxy-based, epoxy acrylate-based, acrylate-based UV overcoat and a thermal overcoat, a photo spacer resist, a color filter resist, a black matrix resin and resists used in IPA and MVA modes, as well as minimizing corrosions of the lower metal layer and the glass substrate during the stripping process, maximizing a replacement cycle of the stripper due to its low evaporative loss and its high stripping speed for regenerating the color substrate and the TFT substrate at a large scale.
  • the resists selected from the group consisting of an epoxy-based, epoxy acrylate-based, acrylate-based UV overcoat and a thermal overcoat, a photo spacer resist, a color filter
  • the present invention provides aqueous resist stripper composition
  • aqueous resist stripper composition comprising 0.3 to 15 % by weight of an inorganic alkaline compound; 0.1 to 12 % by weight of a tetraalkylammonium hydroxide compound; 0.1 to 40 % by weight of a water-soluble organic solvent; and 33 to 99.5 % by weight of water, based on total weight of the composition.
  • the aqueous resist stripper composition according to the present invention includes an inorganic alkaline compound.
  • the inorganic alkaline compound functions to easily remove a resist from a glass surface by weakening a binding force between binder components and/or cured poly-functional monomers composed of the resist composition.
  • An example of the inorganic alkaline compound may include, but is not limited to, sodium carbonate, potassium carbonate, sodium silicate, potassium silicate, sodium hydroxide, potassium hydroxide, etc. if it functions as described previously. Especially it is preferred to use sodium hydroxide or potassium hydroxide.
  • the inorganic alkaline compound has a content of 0.3 to 15
  • the inorganic alkaline compound has a problem of showing a poor stripping property if it has a content of less than 0.3 % by weight, while it has a problem of depositing an organic salt and an inorganic alkaline compound into a solid due to evaporation of moisture and an organic solvent during the stripping process, and therefore resulting in a severe damage to the glass substrate if it exceeds a content of 15 % by weight.
  • the inorganic alkaline compound preferably has a content of 1 to 7 % by weight.
  • a tetraalkylammonium hydroxide compound, which is included in the aqueous resist stripper composition of the present invention, is represented by Chemistry Figure 1, as follows.
  • R to R is independently a substituted alkyl group or an unsubstituted alkyl group.
  • the unsubstituted alkyl group includes an alkyl group having 1 to 4 carbon atoms selected from the group consisting of a methyl group, an ethyl group, an n- propyl group, an n-butyl group, etc.
  • the substituted alkyl group is preferably an alkyl group where a hydrogen atom of the alkyl group having 1 to 4 carbon atoms is substituted with a hydroxy group, an alkoxy group or a hydroxyalkyl group, and an example of the substituted alkyl group includes a 2-hydroxy ethyl group, a 3-hydroxy propyl group, a 4-hydroxy butyl group, a 2-methoxyethyl group, a 2-(2-hydroxyethoxy)ethyl group, etc.
  • Such a tetraalkylammonium hydroxide compound includes tetramethylammonium hydroxide, tetraethylammonium hydroxide, tetra n-propylammoniumhydroxide, tetra n-butylammonium hydroxide, tetra(2-hydroxyethyl)ammonium hydroxide, trimethyl(2-hydroxyethyl)ammonium hydroxide, trimethyl2-(2-hydroxyethoxy)ethylammonium hydroxide, dimethyldiethy- lammonium hydroxide, etc.
  • the compounds may be used alone or with a mixture thereof.
  • the tetraalkylammonium hydroxide compound which mainly functions to remove the color resists of R, G and B from the color filter substrate, has a content of 0.1 to 12 % by weight and preferably 0.1 to 8 % by weight, based on a total weight of the aqueous resist stripper composition of the present invention.
  • the tetraalkylammonium hydroxide compound has a poor stripping property of the resist if it has a content of less than 0.1 % by weight, while the tetraalkylammonium hydroxide compound has an advantage of easily stripping the resist, but a disadvantage of causing corrosion of the glass substrate if it exceeds a content of 12 % by weight.
  • the aqueous resist stripper composition of the present invention includes a water- soluble organic solvent.
  • the water-soluble organic solvent allows a cured portion to be effectively stripped from the substrate by swelling only the cured portion of the resist components, and especially it is effective to remove the thermal overcoat.
  • the water-soluble organic solvent includes amides such as dimethylsulf oxide; N- methyl-2-pyrrolidinone, N-ethyl-2-pyrrolidinone, N-propyl-2-pyrrolidinone, N- hydroxymethyl-2-pyrrolidinone, N-hydroxyethyl-2-pyrrolidinone, N- methylformamide, N,N-dimethylformamide, N-methylacetamide, N,N-dimethylacetamide, N,N-diethylacetamide, etc.; sulfones such as dimethylsulf one, diethylsulfone, bis(2-hydroxyethyl)sulfone, tetramethylenesulfone, etc.; alcohols such as methylalcohol, ethylalcohol, propylalcohol, butylalcohol, pentylalcohol, hexylalcohol, isopropylalcohol, isobutylal
  • Such a water-soluble organic solvent has a content of 0.1 to 40 % by weight, and preferably 1 to 30 % by weight, based on a total weight of the aqueous stripper composition.
  • the water-soluble organic solvent shows a poor swelling effect on the resist and therefore a poor stripping property if it has a content of less than 0.1 % by weight, while the water-soluble organic solvent shows an excellent swelling effect on the resist if it exceeds a content of 40 % by weight, but shows a poor stripping property as its duration of use increases since the stability of the composition is lowered.
  • water may be used as a solvent since it is an environment-friendly solvent and shows improved properties such as stability and a stripping property against flammability.
  • Water used in the aqueous resist stripper composition of the present invention may preferably be a pure water or ultra pure water such as ion-exchanged water, distilled water, etc, and it has a content of 33 to 99.5 % by weight, based on the composition of the present invention.
  • an amine compound or an alkylene glycol-based organic solvent may further be added to improve the stripping property of the aqueous resist stripper composition according to the present invention.
  • the amine compound preferably has a negative logarithm of the acid dissociation constant (pH) of 7.5 to 13.5 in the aqueous solution at 25 0 C, considered to the corrosivity by Ti and Al.
  • an example of such an amine compound includes alkanol amines such as hydroxylamine, monoethanolamine, diethanolamine, triethanolamine, 2-(2-aminoethoxy)ethanol, N,N-dimethylethylamine, N,N-diethylethanolamine, N,N-dibutylethanolamine, N-methylethanolamine, N- ethylethanolamine, N-butylethanolamine, N-methyldiethanolamine, monoiso- propanolamine, triisopropanolamine, etc.; polyalkylene polyamines such as diethylen- etriamine, triethylenetetraamine, propylenediamine, N,N-diethylethylenediamine, N,N'-diethylethylenediamine, 1 ,4-butanediamine, N-ethyl-ethylenediamine, 1,2-propanediamine, 1,3-propanediamine, 1,6-hexanediamide, etc.; aliphatic amine
  • the amine compound may have a content of 1 to 30 % by weight considered to its stability and stripping property, based on a total weight of the composition.
  • an example of the alkylene glycol-based organic solvent includes, but is not limited to, an organic solvent of carbitols such as methylcarbitol, ethylcarbitol, butyl carbitol; a glycol organic solvent of polyhydric alcohols such as ethylene glycol, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol monobutyl ether, ethylene glycol monomethyl ether acetate, ethyleneglyco- lethyletheracetate, diethyleneglycol, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol monobutyl ether; and derivatives thereof. They may be used alone or with a mixture thereof.
  • the alkylene glycol-based organic solvent may have a content of 1 to 45 % by weight considered to its stripping property and compatability with water, based on a total weight of the composition.
  • a surfactant may be added to remove the resist components in a more effective manner.
  • the surfactant functions to lower an interaction between the resist film and a glass substrate, and therefore reduce a surface energy to penetrate an alkaline compound and an organic solvent into a resist paint film, finally giving an excellent stripping property to the glass substrate.
  • the surfactant may prevent the stripped resist components from being reattached to the glass substrate, and also prevent the aqueous stripper from being decolored due to its oxidation even when it is used for a long time.
  • the surfactant is not limited if it may be used in the aqueous resist stripper.
  • the surfactant includes a sulfoxide -based or carboxy-based cationic surfactant such as alkylbenzene sulfonate, alkylsulfate, poly- oxyalkylethersulfate, alkansulfonate, polyoxyethylene alkylether methylcarboxylate, alkylphosphate, alkylsulfosuccinate, olefinsulfonate, aceylamidoalkyl sulfate, aceyl- sarcosinate, sodium naphthalene sulfonate formalin condensate, etc., or a non-ionic surfactant having 5 to 20 % by weight of an ethylene oxide adduct, and they may be used alone or with a mixture thereof.
  • the surfactant preferably has a content of 0.05 to 10 % by weight considered to an effect on its addition and a washing property after treatment of the aqueous stripper, based on a total weight of the
  • the aqueous resist stripper composition according to the present invention shows an excellent stripping property, a very low corrosivity of the lower substrate, and a low evaporation and aging properties.
  • the aqueous stripper composition also allows mass- production of the glass substrate due to a low environmental pollution and working stability in the field because water is used as a solvent in the composition, as described previously. Accordingly, unlike the conventional color filter or TFT substrates which have been wasted due to the incorrect pattern formation, the color filter or TFT substrates obtained from the aqueous resist stripper composition according to the present invention may effectively remove a variety of the resists present in large areas of the color filter substrate and the TFT substrate, and therefore regenerate the color substrate and the TFT substrate.
  • Comparative embodiments 1 to 3 [30] Aqueous resist aqueous stripper compositions were prepared in the same manner as the Embodiments 1 to 16, based on the components and contents listed in a following Table 2.
  • KOH represents potassium hydroxide
  • TMAH tetramethylammonium hydroxide
  • TEAH tetraethylmmonium hydroxide
  • TPAH tetrapropylammonium hydroxide
  • NMP represents N-methyl pyrrolidone
  • DMSO dimethyl sulfoxide
  • BzOH represents benzyl alcohol
  • BDG butyldiglycol
  • EC ethylcarbitol
  • HDA represents hydroxyl amine
  • MEA represents monoethanolamine
  • DMAC represents N,N-dimethylacetamide
  • DI represents an ultra pure water
  • K-290 represents cationic surfactant commercially available from the company Hannong Chemicals Inc.
  • OP-IO represents non-ionic surfactant commercially available from the company Hannong Chemicals Inc.
  • aqueous resist stripper compositions of the Embodiments and the Comparative embodiments prepared in the above mentioned manner were measured for a stripping property, corrosivity and evaporation rate, as follows.
  • Composition A is comprised of a black matrix resin, a color filter photoresist, a UV overcoat and a photo spacer resist
  • Composition B is identical to the Composition A, except that a thermal overcoat was used instead of the UV overcoat.
  • the Com ⁇ positions A and B were evaluated for their stripping properties.
  • the aqueous stripper compositions prepared in the Embodiments and the Comparative embodiments were kept at 55 0 C, and then a stripping level of test samples were investigated at the time points of 10 minutes, 15 minutes and 20 minutes by an ultrasonic cleaning.
  • the evaluation standard is as follows.
  • test samples which were used in the evaluation of a stripping property, were also used to carry out a corrosion test of the aqueous stripper composition.
  • the aqueous stripper compositions prepared in the Embodiments and the Comparative em ⁇ bodiments were kept at 55 0 C, and the organic substrates treated with a Cr black matrix were immersed into the compositions for 25 minutes and then washed with DI.
  • the Cr black matrix treated thus was removed with an etchant, and then a corrosion level of the glass substrate was evaluated by measuring deviations from a damaged portion and a remaining portion of Cr black matrix in the glass substrate.
  • the aqueous stripper was quantitified to 100 g in a glass beaker, and then weighed at one-hour intervals while keeping a temperature at 55 0 C. the weight was measured and recorded up to the time points of 6 hours, and then an evaporative loss was evaluated as a percentage, based on the weight recorded at the first onset.
  • aqueous resist stripper compositions (Embodiments 1 to 16) according to the present invention easily and completely remove the various resists such as a black matrix resin, a color filter resist, a UV overcoat, a photo spacer resist, a thermal overcoat, etc., as well as show a very low corrosivity.
  • Comparative embodiments 1 to 3 show a poor stripping property and corrode the lower substrate.
  • the aqueous resist stripper composition of the present invention may be useful to easily and simply remove a variety of resists which are generated during the process of manufacturing TFT-LCD but not easily removed by the con ⁇ ventional methods, the resists selected from the group consisting of an epoxy-based, epoxy acrylate-based, acrylate-based UV overcoat and a thermal overcoat, a photo spacer resist, a color filter resist, a black matrix resin and resists used in IPA and MVA modes.
  • aqueous resist stripper composition of the present invention may be useful to minimize corrosions of the lower metal layer and the glass substrate during the stripping process, and to maximize a replacement cycle of the stripper due to its low evaporative loss and its high stripping speed for regenerating the color substrate and the TFT substrate at a large scale.

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  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
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  • Spectroscopy & Molecular Physics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

L'invention concerne une composition de décapage de résist aqueuse pouvant décaper un résist d'un substrat revêtu de résist, tel qu'un substrat à filtre de couleur ou un substrat de TFT. La composition de décapage de résist aqueuse de l'invention comprend 0,3 à 15 % en poids d'un composé alcalin inorganique ; 0,1 à 12 % en poids d'un composé hydroxyde de tétraalkylammonium ; 0,1 à 40 % en poids d'un solvant organique hydrosoluble ; et 33 à 99,5 % en poids d'eau, par rapport au poids total de la composition. La composition de décapage de résist aqueuse de l'invention peut être utile pour supprimer facilement et simplement plusieurs résists qui sont générés pendant le procédé de fabrication de TFT-LCD mais qui ne sont pas faciles à enlever par des méthodes classiques, et pour minimiser la corrosion d'une couche de métal inférieure et d'un substrat de verre pendant le procédé de décapage, pour maximiser le cycle de remplacement du décapeur du fait de sa faible perte par évaporation et de son faible vieillissement, et pour régénérer le substrat de couleur et le substrat de TFT à une grande échelle.
PCT/KR2005/002429 2004-07-28 2005-07-26 Composition aqueuse de decapage de resist WO2006011747A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2004-0059033 2004-07-28
KR1020040059033A KR100629416B1 (ko) 2004-07-28 2004-07-28 레지스트 수계 박리액 조성물

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EP2138557A1 (fr) * 2008-06-18 2009-12-30 Paul Hughett Composition de nettoyage d'un moteur à combustion interne supérieure
CN102626699A (zh) * 2012-04-25 2012-08-08 华灿光电股份有限公司 一种提高芯片亮度的方法
EP2432035A3 (fr) * 2010-09-21 2013-01-02 Rohm and Haas Electronic Materials LLC Procédé amélioré de décapage de résistants à la gravure thermofusibles de semi-conducteurs
CN102854761A (zh) * 2012-08-08 2013-01-02 华灿光电股份有限公司 一种刻蚀后去胶的溶液和方法
TWI478888B (zh) * 2008-08-04 2015-04-01 Toppan Printing Co Ltd 玻璃基板再生裝置
CN109896742A (zh) * 2019-04-23 2019-06-18 蚌埠中光电科技有限公司 一种tft-lcd基板玻璃的镀膜方法
JP2019124948A (ja) * 2019-02-20 2019-07-25 東京応化工業株式会社 リソグラフィー用洗浄液、及び基板の洗浄方法
CN116770308A (zh) * 2023-08-24 2023-09-19 昆山市板明电子科技有限公司 一种适用于超精细线路制作的剥膜液及其应用

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US8110535B2 (en) * 2009-08-05 2012-02-07 Air Products And Chemicals, Inc. Semi-aqueous stripping and cleaning formulation for metal substrate and methods for using same
KR101375100B1 (ko) * 2012-08-31 2014-03-17 주식회사 이엔에프테크놀로지 후막의 네가티브 포토레지스트용 박리액 조성물
KR102010593B1 (ko) * 2013-05-28 2019-08-13 동우 화인켐 주식회사 칼라 레지스트 및 유기계 절연막 박리액 조성물
JP6438649B2 (ja) * 2013-12-10 2018-12-19 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
KR102347618B1 (ko) * 2015-04-02 2022-01-05 동우 화인켐 주식회사 레지스트 박리액 조성물
WO2019135430A1 (fr) * 2018-01-08 2019-07-11 (주)엠티아이 Composition de revêtement protecteur pour traitement de tranche et agent de revêtement protecteur la comprenant
KR102771028B1 (ko) * 2018-08-31 2025-02-24 주식회사 이엔에프테크놀로지 칼라 필터용 박리액 조성물 및 이를 이용한 방법
CN110161812A (zh) * 2019-06-06 2019-08-23 成都中电熊猫显示科技有限公司 重工药液及其制备方法、重工装置
KR102040066B1 (ko) * 2019-08-02 2019-11-04 동우 화인켐 주식회사 칼라 레지스트 및 유기계 절연막 박리액 조성물
WO2022232751A1 (fr) * 2021-04-30 2022-11-03 Versum Materials Us, Llc Compositions pour éliminer une photorésine d'un substrat et leurs utilisations

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EP2138557A1 (fr) * 2008-06-18 2009-12-30 Paul Hughett Composition de nettoyage d'un moteur à combustion interne supérieure
TWI478888B (zh) * 2008-08-04 2015-04-01 Toppan Printing Co Ltd 玻璃基板再生裝置
EP2432035A3 (fr) * 2010-09-21 2013-01-02 Rohm and Haas Electronic Materials LLC Procédé amélioré de décapage de résistants à la gravure thermofusibles de semi-conducteurs
US9130110B2 (en) 2010-09-21 2015-09-08 Rohm And Haas Electronic Materials Llc Method of stripping hot melt etch resists from semiconductors
CN102626699A (zh) * 2012-04-25 2012-08-08 华灿光电股份有限公司 一种提高芯片亮度的方法
CN102854761A (zh) * 2012-08-08 2013-01-02 华灿光电股份有限公司 一种刻蚀后去胶的溶液和方法
JP2019124948A (ja) * 2019-02-20 2019-07-25 東京応化工業株式会社 リソグラフィー用洗浄液、及び基板の洗浄方法
CN109896742A (zh) * 2019-04-23 2019-06-18 蚌埠中光电科技有限公司 一种tft-lcd基板玻璃的镀膜方法
CN116770308A (zh) * 2023-08-24 2023-09-19 昆山市板明电子科技有限公司 一种适用于超精细线路制作的剥膜液及其应用
CN116770308B (zh) * 2023-08-24 2023-11-14 昆山市板明电子科技有限公司 一种适用于超精细线路制作的剥膜液及其应用

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KR20060010366A (ko) 2006-02-02
TWI311585B (en) 2009-07-01

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