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WO2006009818A3 - Traitement de structure a semiconducteur au moyen de spots a faisceaux laser multiples - Google Patents

Traitement de structure a semiconducteur au moyen de spots a faisceaux laser multiples Download PDF

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Publication number
WO2006009818A3
WO2006009818A3 PCT/US2005/021406 US2005021406W WO2006009818A3 WO 2006009818 A3 WO2006009818 A3 WO 2006009818A3 US 2005021406 W US2005021406 W US 2005021406W WO 2006009818 A3 WO2006009818 A3 WO 2006009818A3
Authority
WO
WIPO (PCT)
Prior art keywords
links
rows
lengthwise direction
multiple laser
laser beam
Prior art date
Application number
PCT/US2005/021406
Other languages
English (en)
Other versions
WO2006009818A2 (fr
Inventor
Kelly J Bruland
Ho Wai Lo
Brian W Baird
Frank G Evans
Richard S Harris
Yunlong Sun
Stephen N Swaringen
Original Assignee
Electro Scient Ind Inc
Kelly J Bruland
Ho Wai Lo
Brian W Baird
Frank G Evans
Richard S Harris
Yunlong Sun
Stephen N Swaringen
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US11/052,014 external-priority patent/US7629234B2/en
Priority claimed from US11/051,263 external-priority patent/US7935941B2/en
Priority claimed from US11/051,500 external-priority patent/US8148211B2/en
Priority claimed from US11/052,000 external-priority patent/US7923306B2/en
Priority claimed from US11/051,262 external-priority patent/US7687740B2/en
Priority claimed from US11/051,265 external-priority patent/US7435927B2/en
Priority claimed from US11/051,261 external-priority patent/US7633034B2/en
Priority to JP2007516763A priority Critical patent/JP5294629B2/ja
Priority to GB0623283A priority patent/GB2429843B/en
Application filed by Electro Scient Ind Inc, Kelly J Bruland, Ho Wai Lo, Brian W Baird, Frank G Evans, Richard S Harris, Yunlong Sun, Stephen N Swaringen filed Critical Electro Scient Ind Inc
Priority to KR1020067026513A priority patent/KR101257029B1/ko
Priority to DE112005001418T priority patent/DE112005001418T5/de
Publication of WO2006009818A2 publication Critical patent/WO2006009818A2/fr
Publication of WO2006009818A3 publication Critical patent/WO2006009818A3/fr

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/067—Dividing the beam into multiple beams, e.g. multifocusing
    • B23K26/0676—Dividing the beam into multiple beams, e.g. multifocusing into dependently operating sub-beams, e.g. an array of spots with fixed spatial relationship or for performing simultaneously identical operations
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/067—Dividing the beam into multiple beams, e.g. multifocusing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08—Devices involving relative movement between laser beam and workpiece
    • B23K26/083—Devices involving movement of the workpiece in at least one axial direction
    • B23K26/0853—Devices involving movement of the workpiece in at least in two axial directions, e.g. in a plane
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/143—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using laser-fusible links
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/18—Auxiliary circuits, e.g. for writing into memory
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
    • G11C29/027—Detection or location of defective auxiliary circuits, e.g. defective refresh counters in fuses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
    • H01L23/5256—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising fuses, i.e. connections having their state changed from conductive to non-conductive
    • H01L23/5258—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising fuses, i.e. connections having their state changed from conductive to non-conductive the change of state resulting from the use of an external beam, e.g. laser beam or ion beam
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/40—Semiconductor devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Toxicology (AREA)
  • Electromagnetism (AREA)
  • Laser Beam Processing (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Lasers (AREA)
  • Semiconductor Lasers (AREA)
  • Recrystallisation Techniques (AREA)

Abstract

L'invention concerne des procédés et des systèmes qui traitent des liaisons électriquement conductrices sur ou dans un substrat à semiconducteur (740) avec des faisceaux laser multiples. Par exemple, un procédé utilise N séries d'impulsions laser afin d'obtenir un avantage de débit, N = 2. Les liaisons sont disposées dans plusieurs rangées sensiblement parallèles s'étendant généralement dans le sens de la longueur. Les N séries d'impulsions laser se propagent le long de N axes de faisceaux respectifs jusqu'à ce qu'ils soient incidents sur les liaisons sélectionnées. Le motif des spots laser obtenu peut être sur des liaisons dans N rangées distinctes, ou des liaisons distinctes dans la même rangée, ou la même liaison, superposées partiellement ou complètement. Les spots laser obtenus peuvent être déviés les uns des autres dans le sens de la longueur des rangées ou décalés les uns des autres dans un sens perpendiculaire au sens de la longueur des rangées, ou les deux.
PCT/US2005/021406 2004-06-18 2005-06-16 Traitement de structure a semiconducteur au moyen de spots a faisceaux laser multiples WO2006009818A2 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
DE112005001418T DE112005001418T5 (de) 2004-06-18 2005-06-16 Halbleiterstruktur-Bearbeitung unter Verwendung von mehreren Laserstrahlpunkten
KR1020067026513A KR101257029B1 (ko) 2004-06-18 2005-06-16 다중 레이저 빔 스폿을 이용하는 반도체 구조 가공
JP2007516763A JP5294629B2 (ja) 2004-06-18 2005-06-16 複数のレーザビームスポットを使用する半導体構造加工
GB0623283A GB2429843B (en) 2004-06-18 2005-06-16 Semiconductor structure processing using multiple laser beam spots

Applications Claiming Priority (18)

Application Number Priority Date Filing Date Title
US58091704P 2004-06-18 2004-06-18
US60/580,917 2004-06-18
US11/051,261 2005-02-04
US11/052,014 2005-02-04
US11/052,014 US7629234B2 (en) 2004-06-18 2005-02-04 Semiconductor structure processing using multiple laterally spaced laser beam spots with joint velocity profiling
US11/051,261 US7633034B2 (en) 2004-06-18 2005-02-04 Semiconductor structure processing using multiple laser beam spots overlapping lengthwise on a structure
US11/051,263 2005-02-04
US11/051,265 US7435927B2 (en) 2004-06-18 2005-02-04 Semiconductor link processing using multiple laterally spaced laser beam spots with on-axis offset
US11/051,262 US7687740B2 (en) 2004-06-18 2005-02-04 Semiconductor structure processing using multiple laterally spaced laser beam spots delivering multiple blows
US11/052,000 US7923306B2 (en) 2004-06-18 2005-02-04 Semiconductor structure processing using multiple laser beam spots
US11/051,958 2005-02-04
US11/051,500 2005-02-04
US11/052,000 2005-02-04
US11/051,265 2005-02-04
US11/051,500 US8148211B2 (en) 2004-06-18 2005-02-04 Semiconductor structure processing using multiple laser beam spots spaced on-axis delivered simultaneously
US11/051,958 US7425471B2 (en) 2004-06-18 2005-02-04 Semiconductor structure processing using multiple laser beam spots spaced on-axis with cross-axis offset
US11/051,263 US7935941B2 (en) 2004-06-18 2005-02-04 Semiconductor structure processing using multiple laser beam spots spaced on-axis on non-adjacent structures
US11/051,262 2005-02-04

Publications (2)

Publication Number Publication Date
WO2006009818A2 WO2006009818A2 (fr) 2006-01-26
WO2006009818A3 true WO2006009818A3 (fr) 2007-03-01

Family

ID=35785685

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2005/021406 WO2006009818A2 (fr) 2004-06-18 2005-06-16 Traitement de structure a semiconducteur au moyen de spots a faisceaux laser multiples

Country Status (5)

Country Link
JP (1) JP5294629B2 (fr)
KR (1) KR101257029B1 (fr)
DE (1) DE112005001418T5 (fr)
GB (1) GB2429843B (fr)
WO (1) WO2006009818A2 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9199334B2 (en) 2009-02-03 2015-12-01 Abbott Cardiovascular Systems Inc. Multiple beam laser system for forming stents

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US8084706B2 (en) * 2006-07-20 2011-12-27 Gsi Group Corporation System and method for laser processing at non-constant velocities
US8278595B2 (en) * 2007-03-16 2012-10-02 Electro Scientific Industries, Inc. Use of predictive pulse triggering to improve accuracy in link processing
DE102007032903A1 (de) * 2007-07-14 2009-01-15 Schepers Gmbh + Co. Kg Verfahren zum Betreiben einer Lasergravureinrichtung
KR101310243B1 (ko) * 2007-09-19 2013-09-24 지에스아이 그룹 코포레이션 고속 빔 편향 링크 가공
JP2011092956A (ja) * 2009-10-27 2011-05-12 Fujifilm Corp 光ヘッド装置、及び該光ヘッド装置を用いたレーザ加工方法
US8461479B2 (en) * 2009-12-23 2013-06-11 Electro Scientific Industries, Inc. Adaptive processing constraints for memory repair
JP5901265B2 (ja) * 2011-11-10 2016-04-06 東芝機械株式会社 パルスレーザ加工装置およびパルスレーザ加工方法
US9678350B2 (en) 2012-03-20 2017-06-13 Kla-Tencor Corporation Laser with integrated multi line or scanning beam capability
JP6022223B2 (ja) * 2012-06-14 2016-11-09 株式会社ディスコ レーザー加工装置
JP5940906B2 (ja) * 2012-06-19 2016-06-29 株式会社ディスコ レーザー加工装置
EP3102389B1 (fr) * 2014-02-06 2019-08-28 United Technologies Corporation Système de fabrication d'additif avec un canon à faisceaux multi-laser et procédé de fonctionnement
JP6218770B2 (ja) * 2014-06-23 2017-10-25 三菱電機株式会社 レーザ加工装置
US10307867B2 (en) 2014-11-05 2019-06-04 Asm Technology Singapore Pte Ltd Laser fiber array for singulating semiconductor wafers
KR101612508B1 (ko) * 2015-02-03 2016-04-14 동서대학교산학협력단 오류 주입 공격을 위한 이중 모드 레이저 프로빙 시스템
CN112091421B (zh) * 2015-09-09 2022-12-23 伊雷克托科学工业股份有限公司 镭射处理设备、镭射处理工件的方法及相关配置
KR101987192B1 (ko) * 2017-06-14 2019-09-30 주식회사 이오테크닉스 가공물 절단 장치
US10615044B1 (en) * 2018-10-18 2020-04-07 Asm Technology Singapore Pte Ltd Material cutting using laser pulses
JP6843219B1 (ja) * 2019-12-25 2021-03-17 浜松ホトニクス株式会社 レーザ加工用光源及びレーザ加工装置
CN115335965A (zh) * 2020-03-24 2022-11-11 东京毅力科创株式会社 基板处理方法和基板处理装置

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US6368945B1 (en) * 2000-03-16 2002-04-09 The Trustees Of Columbia University In The City Of New York Method and system for providing a continuous motion sequential lateral solidification

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9199334B2 (en) 2009-02-03 2015-12-01 Abbott Cardiovascular Systems Inc. Multiple beam laser system for forming stents

Also Published As

Publication number Publication date
KR101257029B1 (ko) 2013-04-22
GB2429843B (en) 2009-07-08
GB2429843A (en) 2007-03-07
JP2008503877A (ja) 2008-02-07
WO2006009818A2 (fr) 2006-01-26
KR20070036747A (ko) 2007-04-03
DE112005001418T5 (de) 2008-02-21
GB0623283D0 (en) 2007-01-03
JP5294629B2 (ja) 2013-09-18

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