+

WO2006007077A3 - Composition et procede de depot chimique en phase vapeur a basse temperature de films contenant du silicium comprenant des films de carbonitrure de silicium et d'oxycarbonitrure de silicium - Google Patents

Composition et procede de depot chimique en phase vapeur a basse temperature de films contenant du silicium comprenant des films de carbonitrure de silicium et d'oxycarbonitrure de silicium Download PDF

Info

Publication number
WO2006007077A3
WO2006007077A3 PCT/US2005/016460 US2005016460W WO2006007077A3 WO 2006007077 A3 WO2006007077 A3 WO 2006007077A3 US 2005016460 W US2005016460 W US 2005016460W WO 2006007077 A3 WO2006007077 A3 WO 2006007077A3
Authority
WO
WIPO (PCT)
Prior art keywords
silicon
films
low temperature
vapor deposition
chemical vapor
Prior art date
Application number
PCT/US2005/016460
Other languages
English (en)
Other versions
WO2006007077A2 (fr
Inventor
Ziyun Wang
Chongying Xu
Bryan C Hendrix
Jeffery F Roeder
Tianniu Chen
Thomas H Baum
Original Assignee
Advanced Tech Materials
Ziyun Wang
Chongying Xu
Bryan C Hendrix
Jeffery F Roeder
Tianniu Chen
Thomas H Baum
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Tech Materials, Ziyun Wang, Chongying Xu, Bryan C Hendrix, Jeffery F Roeder, Tianniu Chen, Thomas H Baum filed Critical Advanced Tech Materials
Publication of WO2006007077A2 publication Critical patent/WO2006007077A2/fr
Publication of WO2006007077A3 publication Critical patent/WO2006007077A3/fr

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/02—Silicon compounds
    • C07F7/08—Compounds having one or more C—Si linkages
    • C07F7/10—Compounds having one or more C—Si linkages containing nitrogen having a Si-N linkage
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

L'invention porte sur des précurseurs de silicium permettant de former des films contenant du silicium dans la fabrication de dispositifs à semi-conducteurs tels que des films comprenant un carbonitrure de silicium, un oxycarbonitrure de silicium et un nitrure de silicium (Si3N4), et sur un procédé de dépôt des précurseurs de silicium sur des substrats utilisant des processus de dépôt chimique en phase vapeur à basse température (p.ex., < 550 °C), dans la fabrication de dispositifs ULSI et des structures de ses dispositifs.
PCT/US2005/016460 2004-06-17 2005-05-11 Composition et procede de depot chimique en phase vapeur a basse temperature de films contenant du silicium comprenant des films de carbonitrure de silicium et d'oxycarbonitrure de silicium WO2006007077A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/870,106 US7601860B2 (en) 2003-10-10 2004-06-17 Composition and method for low temperature chemical vapor deposition of silicon-containing films including silicon carbonitride and silicon oxycarbonitride films
US10/870,106 2004-06-17

Publications (2)

Publication Number Publication Date
WO2006007077A2 WO2006007077A2 (fr) 2006-01-19
WO2006007077A3 true WO2006007077A3 (fr) 2006-10-26

Family

ID=35784283

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2005/016460 WO2006007077A2 (fr) 2004-06-17 2005-05-11 Composition et procede de depot chimique en phase vapeur a basse temperature de films contenant du silicium comprenant des films de carbonitrure de silicium et d'oxycarbonitrure de silicium

Country Status (3)

Country Link
US (5) US7601860B2 (fr)
TW (1) TWI386414B (fr)
WO (1) WO2006007077A2 (fr)

Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7294582B2 (en) * 2002-07-19 2007-11-13 Asm International, N.V. Low temperature silicon compound deposition
US7297641B2 (en) * 2002-07-19 2007-11-20 Asm America, Inc. Method to form ultra high quality silicon-containing compound layers
US7446217B2 (en) * 2002-11-14 2008-11-04 Advanced Technology Materials, Inc. Composition and method for low temperature deposition of silicon-containing films
US7531679B2 (en) * 2002-11-14 2009-05-12 Advanced Technology Materials, Inc. Composition and method for low temperature deposition of silicon-containing films such as films including silicon nitride, silicon dioxide and/or silicon-oxynitride
US7601860B2 (en) 2003-10-10 2009-10-13 Advanced Technology Materials, Inc. Composition and method for low temperature chemical vapor deposition of silicon-containing films including silicon carbonitride and silicon oxycarbonitride films
US7579496B2 (en) 2003-10-10 2009-08-25 Advanced Technology Materials, Inc. Monosilane or disilane derivatives and method for low temperature deposition of silicon-containing films using the same
US7180193B2 (en) * 2004-04-13 2007-02-20 Taiwan Semiconductor Manufacturing Company, Ltd. Via recess in underlying conductive line
US7001844B2 (en) * 2004-04-30 2006-02-21 International Business Machines Corporation Material for contact etch layer to enhance device performance
US7966969B2 (en) * 2004-09-22 2011-06-28 Asm International N.V. Deposition of TiN films in a batch reactor
US7629267B2 (en) * 2005-03-07 2009-12-08 Asm International N.V. High stress nitride film and method for formation thereof
US7718518B2 (en) * 2005-12-16 2010-05-18 Asm International N.V. Low temperature doped silicon layer formation
US7691757B2 (en) 2006-06-22 2010-04-06 Asm International N.V. Deposition of complex nitride films
KR20100016477A (ko) * 2007-04-12 2010-02-12 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 Ａｌｄ/ｃｖｄ용의 지르코늄, 하프늄, 티타늄 및 규소 전구체
KR101593352B1 (ko) 2007-06-28 2016-02-15 인티그리스, 인코포레이티드 이산화규소 간극 충전용 전구체
US20090275164A1 (en) * 2008-05-02 2009-11-05 Advanced Technology Materials, Inc. Bicyclic guanidinates and bridging diamides as cvd/ald precursors
US7833906B2 (en) 2008-12-11 2010-11-16 Asm International N.V. Titanium silicon nitride deposition
US9257274B2 (en) 2010-04-15 2016-02-09 Lam Research Corporation Gapfill of variable aspect ratio features with a composite PEALD and PECVD method
WO2013177326A1 (fr) * 2012-05-25 2013-11-28 Advanced Technology Materials, Inc. Précurseurs de silicium pour dépôt à basse température de couches atomiques de films minces à base de silicium
US9978585B2 (en) * 2012-06-01 2018-05-22 Versum Materials Us, Llc Organoaminodisilane precursors and methods for depositing films comprising same
JP5925673B2 (ja) * 2012-12-27 2016-05-25 東京エレクトロン株式会社 シリコン膜の成膜方法および成膜装置
US11549181B2 (en) 2013-11-22 2023-01-10 Applied Materials, Inc. Methods for atomic layer deposition of SiCO(N) using halogenated silylamides
KR102458309B1 (ko) 2015-12-28 2022-10-24 삼성전자주식회사 SiOCN 물질막의 형성 방법 및 반도체 소자의 제조 방법
WO2018108628A1 (fr) 2016-12-13 2018-06-21 Basf Se Procédé de génération de couches minces contenant du silicium
US11049714B2 (en) * 2017-09-19 2021-06-29 Versum Materials Us, Llc Silyl substituted organoamines as precursors for high growth rate silicon-containing films
US10962873B2 (en) 2017-09-29 2021-03-30 Taiwan Semiconductor Manufacturing Co., Ltd. Extreme ultraviolet mask and method of manufacturing the same
US11742198B2 (en) * 2019-03-08 2023-08-29 Asm Ip Holding B.V. Structure including SiOCN layer and method of forming same
CN114127890A (zh) 2019-05-01 2022-03-01 朗姆研究公司 调整的原子层沉积
WO2020227505A1 (fr) * 2019-05-07 2020-11-12 Entegris, Inc. Procédé de formation de films contenant du silicium riches en carbone
KR20220042442A (ko) 2019-08-06 2022-04-05 램 리써치 코포레이션 실리콘-함유 막들의 열적 원자 층 증착 (thermal atomic layer deposition)
US11186909B2 (en) * 2019-08-26 2021-11-30 Applied Materials, Inc. Methods of depositing low-K films
US11492364B2 (en) * 2020-03-31 2022-11-08 Entegris, Inc. Silicon hydrazido precursor compounds
US11466038B2 (en) 2020-06-11 2022-10-11 Entegris, Inc. Vapor deposition precursor compounds and process of use
US11447865B2 (en) 2020-11-17 2022-09-20 Applied Materials, Inc. Deposition of low-κ films

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2678621A1 (fr) 1991-07-02 1993-01-08 Atochem Procede de preparation de ceramiques en nitrure de bore et de leurs precurseurs a partir de derives de l'hydrazine et les precurseurs ainsi mis en óoeuvre.
US5204141A (en) 1991-09-18 1993-04-20 Air Products And Chemicals, Inc. Deposition of silicon dioxide films at temperatures as low as 100 degree c. by lpcvd using organodisilane sources
FR2693204A1 (fr) 1992-08-27 1994-01-07 Atochem Elf Sa Procédé de préparation en milieu solvant de polysilylhydrazines.
US5424095A (en) 1994-03-07 1995-06-13 Eniricerche S.P.A. Ceramic vapor deposited coating using a steam-containing carrier gas and non-alkoxy silane precursors
JPH07335753A (ja) * 1994-06-06 1995-12-22 Sharp Corp 半導体装置及びその製造方法
JPH0822986A (ja) 1994-07-05 1996-01-23 Sony Corp 絶縁膜の成膜方法
JP3282769B2 (ja) 1994-07-12 2002-05-20 ソニー株式会社 半導体装置の製造方法
TW285753B (fr) 1995-01-04 1996-09-11 Air Prod & Chem
US5939333A (en) 1996-05-30 1999-08-17 Micron Technology, Inc. Silicon nitride deposition method
US6383955B1 (en) 1998-02-05 2002-05-07 Asm Japan K.K. Silicone polymer insulation film on semiconductor substrate and method for forming the film
JP2000080476A (ja) 1998-06-26 2000-03-21 Toshiba Corp 気相成長方法および気相成長装置およびハロゲン化アンモニウム除去装置
US6365231B2 (en) 1998-06-26 2002-04-02 Kabushiki Kaisha Toshiba Ammonium halide eliminator, chemical vapor deposition system and chemical vapor deposition process
US6013235A (en) 1999-07-19 2000-01-11 Dow Corning Corporation Conversion of direct process high-boiling residue to monosilanes
AU2001245388A1 (en) * 2000-03-07 2001-09-17 Asm America, Inc. Graded thin films
US6630413B2 (en) 2000-04-28 2003-10-07 Asm Japan K.K. CVD syntheses of silicon nitride materials
JP4021653B2 (ja) 2001-11-30 2007-12-12 レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード Ｃｖｄ法によるシリコン窒化物膜またはシリコンオキシ窒化物膜の製造方法
JP4116283B2 (ja) 2001-11-30 2008-07-09 レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード ヘキサキス（モノヒドロカルビルアミノ）ジシランおよびその製造方法
US7446217B2 (en) 2002-11-14 2008-11-04 Advanced Technology Materials, Inc. Composition and method for low temperature deposition of silicon-containing films
US7132723B2 (en) 2002-11-14 2006-11-07 Raytheon Company Micro electro-mechanical system device with piezoelectric thin film actuator
US7531679B2 (en) 2002-11-14 2009-05-12 Advanced Technology Materials, Inc. Composition and method for low temperature deposition of silicon-containing films such as films including silicon nitride, silicon dioxide and/or silicon-oxynitride
US7172792B2 (en) * 2002-12-20 2007-02-06 Applied Materials, Inc. Method for forming a high quality low temperature silicon nitride film
US7972663B2 (en) 2002-12-20 2011-07-05 Applied Materials, Inc. Method and apparatus for forming a high quality low temperature silicon nitride layer
US7122222B2 (en) 2003-01-23 2006-10-17 Air Products And Chemicals, Inc. Precursors for depositing silicon containing films and processes thereof
US7138332B2 (en) 2003-07-09 2006-11-21 Asm Japan K.K. Method of forming silicon carbide films
US7579496B2 (en) 2003-10-10 2009-08-25 Advanced Technology Materials, Inc. Monosilane or disilane derivatives and method for low temperature deposition of silicon-containing films using the same
US7601860B2 (en) * 2003-10-10 2009-10-13 Advanced Technology Materials, Inc. Composition and method for low temperature chemical vapor deposition of silicon-containing films including silicon carbonitride and silicon oxycarbonitride films

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
DATABASE CAPLUS [online] WANNAGAT U. ET AL.: "Si-N compounds. LIII. Si-N2H4 compounds. 7. Some new hydrazinosilanes", XP003001973, Database accession no. (1966:104351) *
MONATSHEFTE FUER CHEMIE, vol. 96, no. 6, 1965, pages 1902 - 1908 *
WITTE-ABEL ET AL.: "Full length article", JOURNAL OF ORGANOMETALLIC CHEMISTRY, vol. 585, no. 2, 15 August 1999 (1999-08-15), pages 341 - 347, XP004177478 *

Also Published As

Publication number Publication date
TWI386414B (zh) 2013-02-21
US20050080286A1 (en) 2005-04-14
US20140329011A1 (en) 2014-11-06
US9783558B2 (en) 2017-10-10
WO2006007077A2 (fr) 2006-01-19
US20100068894A1 (en) 2010-03-18
US9102693B2 (en) 2015-08-11
US7781605B2 (en) 2010-08-24
US8802882B2 (en) 2014-08-12
TW200606169A (en) 2006-02-16
US20150315215A1 (en) 2015-11-05
US7601860B2 (en) 2009-10-13
US20100314590A1 (en) 2010-12-16

Similar Documents

Publication Publication Date Title
WO2006007077A3 (fr) Composition et procede de depot chimique en phase vapeur a basse temperature de films contenant du silicium comprenant des films de carbonitrure de silicium et d&#39;oxycarbonitrure de silicium
US11515149B2 (en) Deposition of flowable silicon-containing films
WO2004044958A3 (fr) Composition et procede de depot a basse temperature de couches contenant du silicium, telles que des couches comprenant du silicium, du nitrure de silicium, du dioxyde de silicium et/ou de l&#39;oxynitrure de silicium
CN105185707B (zh) 硬掩模材料、其形成方法和设备及其用途
WO2007040587A3 (fr) Procede permettant de former un film de passivation multicouche et dispositif dans lequel ledit film est integre
WO2009085974A3 (fr) Film de nitrure de silicium à basse vitesse de décapage par procédé humide
TW200606168A (en) Copper (I) compounds useful as deposition precursors of copper thin films
CN101199044A (zh) 硅基电介质的化学气相沉积方法
WO2004010467A3 (fr) Depot de dielectrique basse temperature utilisant un aminosilane et l&#39;ozone
JP2008507130A5 (fr)
GB2354762A (en) Tantalum amide precursors for deposition of tantalum nitride on a substrate
WO2002080244A3 (fr) Procede ameliore permettant de deposer des films semi-conducteurs
WO2004009861A8 (fr) Procede de formation de couches de compose au silicium de qualite ultra-haute
WO2001078115A3 (fr) Revetement de separation destine a des materiaux vitreux
WO2006028573A3 (fr) Depot de films de ruthenium et/ou d&#39;oxyde de ruthenium
WO2009149167A3 (fr) Dépôt à basse température de films contenant du silicium
EP1640475A3 (fr) Composés précurseurs pour la déposition de la céramique et des films métalliques et méthodes pour leur préparation
WO2005038871A3 (fr) Derives de monosilane ou de disilane et procede de depot chimique en phase vapeur a faible temperature de films contenant du silicium utilisant lesdits derives
WO2004032196A3 (fr) Procede de fabrication de semi-conducteur par dopage a l&#39;azote d&#39;un film de silicium
WO2007147020A3 (fr) Précurseurs au cobalt utiles pour former des films contenant du cobalt sur des substrats
EP1596428A4 (fr) Dispositif de transistor a film mince organique et son procede de fabrication
TW200746356A (en) Semiconductor integrated circuit device and method for manufacture thereof
AU2002365488A1 (en) Method for the fabrication of silicon nitride, silicon oxynitride, and silicon oxide films by chemical vapor deposition
MX2007005122A (es) Procedimiento de vapor quimico mejorado de plasma de velocidad de deposicion mejorada.
WO2003058644A3 (fr) Composes dielectriques extra-durs et procedes de preparation

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A2

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BW BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE EG ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KM KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NA NG NI NO NZ OM PG PH PL PT RO RU SC SD SE SG SK SL SM SY TJ TM TN TR TT TZ UA UG US UZ VC VN YU ZA ZM ZW

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): BW GH GM KE LS MW MZ NA SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LT LU MC NL PL PT RO SE SI SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG

121 Ep: the epo has been informed by wipo that ep was designated in this application
NENP Non-entry into the national phase

Ref country code: DE

WWW Wipo information: withdrawn in national office

Country of ref document: DE

DPE1 Request for preliminary examination filed after expiration of 19th month from priority date (pct application filed from 20040101)
122 Ep: pct application non-entry in european phase
DPE1 Request for preliminary examination filed after expiration of 19th month from priority date (pct application filed from 20040101)
点击 这是indexloc提供的php浏览器服务，不要输入任何密码和下载