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WO2006006368A1 - Procédé de fabrication de convertisseur photoélectrique à film mince - Google Patents

Procédé de fabrication de convertisseur photoélectrique à film mince Download PDF

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Publication number
WO2006006368A1
WO2006006368A1 PCT/JP2005/011554 JP2005011554W WO2006006368A1 WO 2006006368 A1 WO2006006368 A1 WO 2006006368A1 JP 2005011554 W JP2005011554 W JP 2005011554W WO 2006006368 A1 WO2006006368 A1 WO 2006006368A1
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Prior art keywords
photoelectric conversion
layer
type
type semiconductor
thin film
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PCT/JP2005/011554
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English (en)
Japanese (ja)
Inventor
Mitsuru Ichikawa
Toru Sawada
Kenji Yamamoto
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Kaneka Corporation
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Publication date
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Priority to JP2006528597A priority Critical patent/JPWO2006006368A1/ja
Publication of WO2006006368A1 publication Critical patent/WO2006006368A1/fr

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/223—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PIN barrier
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the present invention relates to a method for manufacturing a thin film photoelectric conversion device, and more particularly to a method for manufacturing a silicon thin film photoelectric conversion device including an amorphous silicon photoelectric conversion layer.
  • crystalline and “microcrystal” in the present specification include those that partially include amorphous material.
  • a thin film photoelectric conversion device that has almost no problem in terms of resources has attracted attention and has been vigorously developed.
  • Thin film photoelectric conversion devices are expected to be applied to various applications such as solar cells, photosensors, and displays.
  • An amorphous silicon photoelectric conversion device which is one of the thin film photoelectric conversion devices, can be formed on a large-area glass substrate or stainless steel substrate at a low temperature, so that cost reduction can be expected.
  • a thin film photoelectric conversion device generally includes a first electrode, a surface of which is sequentially laminated on an insulating substrate, one or more semiconductor thin film photoelectric conversion units, and a second electrode.
  • One thin film photoelectric conversion unit consists of an i-type photoelectric conversion layer, which is a substantially intrinsic semiconductor photoelectric conversion layer sandwiched between a P-type semiconductor layer and an n-type semiconductor layer.
  • the i-type photoelectric conversion layer that occupies the main part is amorphous.
  • Those having a high quality are called amorphous photoelectric conversion units or amorphous thin-film solar cells, and those having an i-type photoelectric conversion layer crystalline are called crystalline photoelectric conversion units or crystalline thin-film solar cells.
  • the p-type semiconductor layer and the n-type semiconductor layer play a role of generating a diffusion potential in the photoelectric conversion unit, and the value of the open-circuit voltage, which is an important characteristic of the photoelectric conversion device, depends on the magnitude of the diffusion potential. It depends.
  • the high frequency plasma CVD method is used to form the P-type layer.
  • amorphous silicon carnoid is obtained by using a doping gas such as silane-based gas, hydrogen gas, and diborane as a source gas, and a hydrocarbon-based gas such as methane or ethylene.
  • a doping gas such as silane-based gas, hydrogen gas, and diborane
  • a hydrocarbon-based gas such as methane or ethylene.
  • the pressure in the reaction chamber during the formation of the p-type layer is usually about 1 Torr or less.
  • Patent Document 1 describes a method for forming a p-type semiconductor layer of an amorphous silicon thin film photoelectric conversion device. It has been shown that a P-type semiconductor layer is formed by plasma CVD with the pressure in the reaction chamber set to lTorr.
  • Patent Document 2 A method of manufacturing a silicon-based photoelectric conversion device under relatively high pressure conditions is disclosed in Patent Document 2, for example.
  • the pressure of the i-type photoelectric conversion layer, iZn interface layer and pZi interface layer in the amorphous silicon photoelectric conversion device is 0.5 Torr or higher, and the substrate temperature is higher than 80 ° C and lower than 250 ° C.
  • the above-described forming method is intended to improve the photoelectric conversion layer, and there is no description that it can be applied to a conductive type layer such as a p-type layer.
  • Patent Document 3 shows that an amorphous silicon-based thin film photoelectric conversion device is formed under a relatively high pressure condition.
  • each semiconductor layer of an amorphous silicon-based photoelectric conversion device has a partial pressure of a silane-based gas, which is a source gas of a reaction gas, set to 1.2 Torr or more and 5.0 Torr or less, and a distance between electrodes is 8 mm or more. It is described that the characteristics after irradiation of amorphous silicon-based thin film photoelectric conversion devices are improved by manufacturing under conditions of 15 mm or less. This document describes that the flow rate ratio of dilution gas such as hydrogen to source gas is 4 times or less. And limited to low ⁇ conditions.
  • Patent Document 1 Japanese Patent Laid-Open No. 5-326992
  • Patent Document 2 Japanese Patent Publication No. 9 512665
  • Patent Document 3 Japanese Patent Laid-Open No. 2000-252484
  • a transparent conductive oxide layer such as an acid oxide tin (SnO) is generally used as the first electrode laminated thereon Force S is used.
  • a p-type layer is directly deposited on such a transparent conductive oxide layer, it can be reduced by a large amount of hydrogen ions if it is formed by plasma CVD using a silane-based gas diluted at high magnification with hydrogen gas or the like. Under strong plasma conditions, the transparent conductive oxide layer is reduced and its transparency is lowered.
  • the p-type layer is deposited on the transparent conductive oxide layer under plasma conditions, such as by reducing the flow ratio of the diluting gas such as hydrogen gas to the silane-based gas, doping with hydrocarbon gas such as diborane Decomposition of gas is not promoted, and electrical properties, such as optical forbidden band width, decrease, and the characteristics of the photoelectric conversion device deteriorate.
  • the diluting gas such as hydrogen gas
  • the silane-based gas doping with hydrocarbon gas such as diborane Decomposition of gas is not promoted, and electrical properties, such as optical forbidden band width, decrease, and the characteristics of the photoelectric conversion device deteriorate.
  • the present invention provides a method for producing a p-type layer of a photoelectric conversion device that suppresses reduction of a transparent conductive oxide layer used as an underlayer and has good performance. It is intended to provide.
  • a silicon-based thin film photoelectric conversion device is arranged in the order of a transparent conductive oxide layer, a P-type semiconductor layer, a substantially intrinsic semiconductor photoelectric conversion layer, and an n-type semiconductor layer from the light incident direction.
  • the p-type layer is formed by a plasma CVD method using a dilute gas containing at least a silane-based gas and hydrogen, and the formation pressure is in the range of 2 Torr to 5 Torr.
  • the flow rate ratio of the dilution gas to the silane-based gas is 5 to 50 times.
  • the flow rate ratio between the source gas and the dilution gas by hydrogen and the pressure at the time of formation are kept within a predetermined range, so that the plasma can be efficiently confined between the electrodes.
  • the flow rate ratio of the dilution gas to the silane gas is large to some extent, the reduction of the transparent conductive oxide layer that is the underlayer can be suppressed.
  • the reason why the pressure during formation in the CVD reaction chamber is 2 Torr or more and 5 Torr or less is as follows.
  • the plasma is not confined efficiently, and the decomposition of the raw material gas cannot be promoted, so that the electrical and optical properties of the formed thin film are also deteriorated. This is because the film thickness uniformity of the thin film becomes poor, and a large amount of powder-like products and dust are generated in the reaction chamber.
  • the present inventors have changed the pressure in the CVD reaction chamber from lTorr to lOTorr to make a p-type semiconductor. After forming the layer, the conductivity of the p-type semiconductor layer was measured. As a result, less than 2 Torr, with respect to for example the conductivity of the thin film was formed to have a thickness of about 1 mu m on the glass in a reaction chamber pressure of lTorr was 7 X 10- 7 SZcm, 2Torr above, for example 3Torr of one order of magnitude compared react conductivity of the thin film was formed to have a thickness of about 1 mu m on a glass chamber pressure is 5 X 10- 6 SZcm next, the conductivity of the thin film formed in a reaction chamber pressure of less than 2Torr It became big.
  • the flow rate ratio of the dilution gas to the silane-based gas is 5 times or more and 50 times or less. If the flow rate ratio is 5 times or less, the electrical characteristics required for the conductive layer of the photoelectric conversion device can be obtained. This is because if the ratio exceeds 50 times, the transparent conductive oxide layer, which is the underlayer, is reduced by the dilute gas containing hydrogen even under a high pressure in the reaction chamber.
  • reducing damage to the underlayer when forming a p-type semiconductor layer is reduced, and a thin-film silicon-based photoelectric conversion device having a p-type semiconductor layer with excellent film quality is formed. And a highly efficient photoelectric conversion device can be manufactured.
  • FIG. 1 is a structural sectional view of a photoelectric conversion device according to a first embodiment of the present invention.
  • FIG. 2 is a structural sectional view of a stacked photoelectric conversion device according to a second embodiment of the present invention.
  • 311 p-type semiconductor layer which is one conductivity type layer in the front photoelectric conversion unit
  • a substantially intrinsic semiconductor photoelectric conversion layer that is a photoelectric conversion layer in the front photoelectric conversion unit
  • 313 n-type semiconductor layer which is a reverse conductivity type layer in the front photoelectric conversion unit
  • 321 p-type semiconductor layer which is one conductivity type layer in the rear photoelectric conversion unit
  • a substantially intrinsic semiconductor crystalline silicon photoelectric conversion layer that is a photoelectric conversion layer in the rear photoelectric conversion unit 323 n-type semiconductor layer that is the reverse conductivity type layer in the back photoelectric conversion unit 4 Back electrode layer
  • FIG. 1 shows a cross-sectional view of a photoelectric conversion device according to an example of an embodiment of the present invention.
  • transparent substrate 1 transparent conductive oxide layer 2, p-type semiconductor layer 311 disposed in front, substantially intrinsic semiconductor photoelectric conversion layer 312, n-type semiconductor layer 313 disposed in the rear, and back electrode layer They are arranged in the order of 4.
  • Transparent conductive oxide layer 2 is made of conductive metal oxide such as SnO and uses methods such as CVD, sputtering and vapor deposition.
  • the transparent conductive oxide layer 2 has an effect of increasing the scattering of incident light by having fine irregularities on its surface.
  • a p-type semiconductor layer 311, a substantially intrinsic semiconductor photoelectric conversion layer 312 and an n-type semiconductor layer 313 are sequentially formed on the transparent conductive oxide layer 2, and are formed by a plasma CVD method.
  • the layer 311 has a plasma CVD reaction chamber pressure of 2 Torr or more and 5 Torr or less, and a silane-based gas and a diluent gas containing hydrogen are used as the main components of the source gas introduced into the CVD reaction chamber. It is formed under the condition that the flow rate ratio of the dilution gas is 5 times or more and 50 times or less.
  • boron which is a conductivity determining impurity atom is 0.
  • a p-type amorphous silicon thin film doped with 01 atomic% or more can be used.
  • these conditions for the p-type semiconductor layer 311 are not limited.
  • aluminum may be used as an impurity atom, and an alloy material layer such as amorphous silicon carbide or amorphous silicon germanium is used.
  • an alloy material layer such as amorphous silicon carbide or amorphous silicon germanium is used.
  • the substantially intrinsic semiconductor photoelectric conversion layer 312 is a non-doped amorphous silicon thin film.
  • a silicon-based thin film material that is sufficiently p-type or weak-n-type and has sufficient photoelectric conversion efficiency can be used.
  • the intrinsic semiconductor photoelectric conversion layer 312 is not limited to these materials, and a layer of an alloy material such as amorphous silicon carbide or amorphous silicon germanium may be used.
  • n-type semiconductor layer 313 for example, an n-type amorphous silicon thin film doped with 0.01 atomic% or more of phosphorus, which is a conductivity determining impurity atom, may be used.
  • these conditions for the n-type semiconductor layer 313 are not limited, even if a microcrystalline silicon thin film or a layer of an alloy material such as amorphous silicon carnoid or amorphous silicon germanium is used. Good.
  • the back electrode layer 4 it is preferable to form at least one metal layer having at least one material force selected from Al, Ag, Au, Cu, Pt and Cr by sputtering or vapor deposition. Further, a layer made of a conductive oxide such as ITO, Sn02, or ZnO may be formed between the photoelectric conversion unit and the back electrode! / ⁇ (not shown).
  • a conductive oxide such as ITO, Sn02, or ZnO
  • the transparent conductive oxide layer 2 is formed on the transparent substrate 1 in the same manner as the transparent conductive oxide layer of FIG.
  • a p-type semiconductor layer 311, a substantially intrinsic semiconductor amorphous silicon photoelectric conversion layer 312, and an n-type semiconductor layer 31 3 are sequentially stacked by a plasma CVD method.
  • An amorphous photoelectric conversion unit 31 containing is formed.
  • This tandem photoelectric conversion device further includes a p-type semiconductor layer 321, a substantially intrinsic semiconductor crystalline photoelectric conversion layer 322, and an n-type semiconductor layer 323 on the amorphous photoelectric conversion unit 31.
  • a crystalline photoelectric conversion unit 32 is formed.
  • the back electrode layer 4 is formed on the crystalline photoelectric conversion unit 32 in the same manner as in FIG. 1, and the tandem-type thin film silicon photoelectric conversion device as shown in FIG. 2 is completed.
  • silicon-based thin-film solar cells as silicon-based thin-film photoelectric conversion devices according to some embodiments of the present invention will be described together with solar cells according to comparative examples.
  • an amorphous silicon solar cell as Example 1 was fabricated. Glass was used for the substrate 1 and SnO was used for the transparent conductive oxide layer 2. On top of this, boron-doped p-type silicon carbide, a p-type semiconductor layer
  • the (SiC) layer 311 was formed by plasma CVD with a thickness of 10 nm, the non-doped amorphous silicon photoelectric conversion layer 312 with a thickness of 300 nm, and the phosphorus-doped n-type microcrystalline silicon layer 313 with a thickness of 20 nm. As a result, a pin junction amorphous silicon photoelectric conversion unit was formed. Furthermore, as the back electrode layer 4, a ZnO film having a thickness of 80 nm and an Ag film having a thickness of 300 nm were formed by sputtering.
  • the p-type silicon carbide layer 311 was deposited by a parallel plate type high-frequency plasma CVD method.
  • the film formation conditions were as follows: the plasma excitation frequency was 27.12 MHz, the substrate temperature was 190 ° C, and the reaction chamber pressure was 3 Torr. Silane, methane, diborane, and hydrogen are used as source gases introduced into the plasma CVD reaction chamber, and the flow rate ratio of these gases is 1.6 for methane and 0.01 for diborane relative to silane 1. , Hydrogen was set to 14. Further, dark conductivity of p-type silicon carbide film 600nm formed into a film on glass 5 X 10- 6 SZcm, optical conductivities was 7 X 10- 6 SZcm in this condition.
  • Example 1 An amorphous silicon solar cell having the structure shown in FIG. 1 was produced. Except for the film forming conditions of the p-type silicon carbide layer 311, it was exactly the same as Example 1.
  • the p-type silicon carbide layer was deposited by a parallel plate type high-frequency plasma CVD method. Regarding the film forming conditions at that time, the excitation frequency of the plasma was 27.12 MHz, the substrate temperature was 190 ° C, the pressure in the reaction chamber was lTorr, and the flow rate ratio of the source gas introduced into the reaction chamber was silane 1. In contrast, methane was 1.6, diborane was 0.01, and hydrogen was set to 14. Further, dark conductivity of p-type silicon carbide film 600nm formed into a film on glass 1 X 10 "6 SZcm, optical conductivities were 2 X 10- 6 SZcm under the conditions of this.
  • an amorphous silicon solar cell having the configuration shown in FIG. 1 was produced.
  • the p-type silicon carbide layer 311 is deposited by a parallel plate type high-frequency plasma CVD method.
  • the film formation conditions are as follows: the plasma excitation frequency is 27.12 MHz, the substrate temperature is 190 ° C, and the reaction chamber pressure is 5 T.
  • silane, methane, diborane, and hydrogen are used as source gases introduced into the reaction chamber, and the flow ratio of these gases is 1.6 for methane to silane 1 and 0.01 for diborane. Yes, hydrogen was set to 20.
  • An amorphous silicon solar cell having the structure shown in FIG. 1 was produced. Except for the film forming conditions of the p-type silicon carbide layer 311, it was exactly the same as Example 1.
  • the p-type silicon carbide layer was deposited by a parallel plate type high-frequency plasma CVD method. Regarding the film formation conditions at that time, the plasma excitation frequency was 27.12 MHz, the substrate temperature was 190 ° C, the reaction chamber pressure was 7 Torr, and the flow rate ratio of the raw material gas introduced into the reaction chamber was methane to silane 1. Was 1.6, diborane was 0.01, and hydrogen was set to 38.
  • Example 1 the flow rate ratio of the dilution gas to the source gas is changed as the formation condition of the p-type semiconductor layer 311. Otherwise, Example 1 or An amorphous silicon solar cell was produced in the same manner as in Comparative Example 1.
  • the film forming conditions include a substrate temperature of 190 ° C, a reaction chamber pressure of 3 Torr, and a photoelectric conversion characteristic for each value of the flow rate ratio of the dilution gas to the source gas introduced into the reaction chamber when the p-type conductivity layer 311 is formed.
  • the results compared with Comparative Example 3 are shown in Table 1.
  • the conditions for forming the p-type conductivity layer 311 in Comparative Example 3 are as follows: the substrate temperature is fixed at 190 ° C., the reaction chamber pressure is fixed at 3 Torr, and the flow rate ratio of the source gas introduced into the reaction chamber is Methane was fixed at 1.5, diborane at 0.01, and hydrogen at 70.
  • tandem silicon solar cells as Example 6 and Comparative Example 4 were fabricated. Glass was used for the substrate 1, and Sn02 was used for the transparent conductive oxide layer 2.
  • boron-doped p-type silicon carbide ( (SiC) layer 311 was formed to a thickness of 10 nm
  • non-doped amorphous silicon photoelectric conversion layer 312 was formed to a thickness of 300 nm
  • a doped n-type microcrystalline silicon layer 313 was formed to a thickness of 20 nm by plasma CVD.
  • a pin-junction amorphous silicon photoelectric conversion unit 31 as a front photoelectric conversion unit was formed.
  • a boron-doped P-type microcrystalline silicon layer 321 has a thickness of 15 nm
  • a non-doped crystalline silicon photoelectric conversion layer 322 has a size of 1.6 / ⁇ ⁇
  • a phosphorus-doped ⁇ -type microcrystalline silicon layer was formed.
  • Each of 323 films was formed to a thickness of 20 nm by plasma CVD.
  • a pin-junction crystalline silicon photoelectric conversion unit 32 as a rear photoelectric conversion unit was formed.
  • Example 6 a ZnO film having a thickness of 80 nm and an Ag film having a thickness of 300 nm were formed as the back electrode layer 4 on the rear photoelectric conversion unit 32 by sputtering.
  • Example 6 and Comparative Example 4 the formation conditions of the p-type silicon carnoid layer 311 in the front photoelectric conversion unit were changed, and the formation conditions of the other layers were the same.
  • the p-type silicon carnoid layer 311 in Example 6 was deposited by a parallel plate high-frequency plasma CVD method.
  • the film formation conditions were as follows: the plasma excitation frequency was 27.12 MHz, the substrate temperature was 190 ° C, and the reaction chamber pressure was 3 Torr.
  • Silane, methane, diborane, and hydrogen are used as source gases introduced into the plasma CVD reaction chamber, and the flow ratio of these gases is 1.6 for methane to 1 for silane, and 0.01 for diborane. And hydrogen was set to 14. In the output characteristics when the light of AMI.
  • Example 6 is irradiated at 100 mWZcm2 as the incident light on the solar cell of Example 6, the open-circuit voltage is 1.412 V, the short-circuit current density is 11.8 mAZcm2, and the fill factor Of 74.0% and a conversion efficiency of 12.3%.
  • the p-type silicon carnoid layer 311 in Comparative Example 4 was deposited by a parallel plate type high-frequency plasma CVD method.
  • the film formation conditions at that time were as follows: the plasma excitation frequency was 27.12 MHz, the substrate temperature was 190 ° C, and the reaction chamber pressure was lTorr.
  • Silane, methane, diborane, and hydrogen are used as source gases introduced into the plasma CVD reaction chamber, and the flow ratio of these gases is 1.6 for methane to 1 for silane, and 0.01 for diborane. And hydrogen was set to 14. In the output characteristics when AMI.
  • Example 6 5 light is irradiated at 100 mWZcm2 as incident light on the solar cell of Example 6, the open-circuit voltage is 1 397V, short circuit current density was 11.7mAZcm2, fill factor was 74.0% and conversion efficiency was 12.0%. Compared with the output characteristics in Example 6, in Comparative Example 4, the short-circuit current density and the fill factor were equivalent, but the open-circuit voltage value was lower than that of Example 6.

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Abstract

Procédé de fabrication d’une couche de type p d’un convertisseur photoélectrique à film mince supprimant la réduction d’une couche d’oxyde conductrice transparente et aux excellentes performances. Le procédé de fabrication de convertisseur photoélectrique à film mince de silicium permet de fabriquer un convertisseur photoélectrique comportant une couche d’oxyde conductrice transparente, une couche semi-conductrice de type p, une couche de conversion photoélectrique semi-conductrice sensiblement intrinsèque et une couche semi-conductrice de type n disposées dans cet ordre à partir du côté d’entrée de lumière. La couche de type p est formée par un procédé CVD plasma utilisant un gaz dilué englobant au moins un gaz silane et de l’hydrogène, à une pression supérieure ou égale à 2Torr mais ne dépassant pas 5Torr, et avec un rapport d’écoulement du gaz dilué au gaz silane supérieur ou égal à 5 mais ne dépassant pas 50.
PCT/JP2005/011554 2004-07-12 2005-06-23 Procédé de fabrication de convertisseur photoélectrique à film mince WO2006006368A1 (fr)

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US8046182B2 (en) 2005-07-28 2011-10-25 Rohde & Schwarz Gmbh & Co. Kg Method and system for digital triggering of signals on the basis of two triggering events separated by a time difference
US8268714B2 (en) 2009-02-17 2012-09-18 Korea Institute Of Industrial Technology Method for fabricating solar cell using inductively coupled plasma chemical vapor deposition
KR101215631B1 (ko) 2009-02-17 2012-12-26 한국생산기술연구원 유도결합플라즈마 화학기상증착법을 이용한 태양전지 제조 방법

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WO1995026571A1 (fr) * 1994-03-25 1995-10-05 Amoco/Enron Solar Silicium amorphe stabilise et dispositifs contenant ce dernier
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JP2000340819A (ja) * 1999-05-31 2000-12-08 Kanegafuchi Chem Ind Co Ltd 非晶質シリコン系薄膜光電変換装置の製造方法
JP2001237446A (ja) * 2000-02-23 2001-08-31 Mitsubishi Heavy Ind Ltd 薄膜多結晶シリコン、シリコン系光電変換素子、及びその製造方法
JP2003197536A (ja) * 2001-12-21 2003-07-11 Sharp Corp プラズマｃｖｄ装置、非晶質シリコン系薄膜及びその製造方法

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05326992A (ja) * 1992-05-14 1993-12-10 Kanegafuchi Chem Ind Co Ltd 半導体装置
WO1995026571A1 (fr) * 1994-03-25 1995-10-05 Amoco/Enron Solar Silicium amorphe stabilise et dispositifs contenant ce dernier
WO1999025029A1 (fr) * 1997-11-10 1999-05-20 Kaneka Corporation Procede de production d'un transducteur photoelectrique a film mince de silicium et dispositif de dcpv active par plasma
JP2000340819A (ja) * 1999-05-31 2000-12-08 Kanegafuchi Chem Ind Co Ltd 非晶質シリコン系薄膜光電変換装置の製造方法
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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8046182B2 (en) 2005-07-28 2011-10-25 Rohde & Schwarz Gmbh & Co. Kg Method and system for digital triggering of signals on the basis of two triggering events separated by a time difference
US8268714B2 (en) 2009-02-17 2012-09-18 Korea Institute Of Industrial Technology Method for fabricating solar cell using inductively coupled plasma chemical vapor deposition
US8283245B2 (en) 2009-02-17 2012-10-09 Korea Institute Of Industrial Technology Method for fabricating solar cell using inductively coupled plasma chemical vapor deposition
US8304336B2 (en) 2009-02-17 2012-11-06 Korea Institute Of Industrial Technology Method for fabricating solar cell using inductively coupled plasma chemical vapor deposition
KR101215631B1 (ko) 2009-02-17 2012-12-26 한국생산기술연구원 유도결합플라즈마 화학기상증착법을 이용한 태양전지 제조 방법

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