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WO2006003575A3 - Laser diode circuit, optical pickup unit and optical disc drive apparatus - Google Patents

Laser diode circuit, optical pickup unit and optical disc drive apparatus Download PDF

Info

Publication number
WO2006003575A3
WO2006003575A3 PCT/IB2005/052089 IB2005052089W WO2006003575A3 WO 2006003575 A3 WO2006003575 A3 WO 2006003575A3 IB 2005052089 W IB2005052089 W IB 2005052089W WO 2006003575 A3 WO2006003575 A3 WO 2006003575A3
Authority
WO
WIPO (PCT)
Prior art keywords
laser
voltage
laser diode
current
current driver
Prior art date
Application number
PCT/IB2005/052089
Other languages
French (fr)
Other versions
WO2006003575A2 (en
Inventor
James J A Mccormack
Original Assignee
Koninkl Philips Electronics Nv
James J A Mccormack
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninkl Philips Electronics Nv, James J A Mccormack filed Critical Koninkl Philips Electronics Nv
Publication of WO2006003575A2 publication Critical patent/WO2006003575A2/en
Publication of WO2006003575A3 publication Critical patent/WO2006003575A3/en

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00Nanooptics, e.g. quantum optics or photonic crystals
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/04Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042Electrical excitation ; Circuits therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/30Structure or shape of the active region; Materials used for the active region
    • H01S5/34Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34333Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/40Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4087Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength

Landscapes

  • Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Optics & Photonics (AREA)
  • Biophysics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Optical Head (AREA)
  • Semiconductor Lasers (AREA)

Abstract

A problem with the known laser driving circuit is that the laser driving circuit needs a relatively high operating voltage. This problem becomes more severe in the current type of lasers such as DVD or Blu-Ray type of lasers. Therefore, it is an object of the invention to provide a laser diode circuit that is able to drive a laser diode with a relatively low operating voltage. This object is achieved according to the invention with a laser diode circuit comprising a laser diode having an anode and a cathode, and a laser current driver for controlling a current through the laser diode, the laser current driver comprising a current sinking element, characterized in that the anode of the laser diode is connected to a laser supply voltage which is positive with respect to ground, and in that the cathode of the laser diode is connected to the current sinking element, and wherein the current through the laser diode is controllable by the current sinking element. The laser current driver in the laser diode circuit according to the invention only 'sees' the voltage at the bottom of the cathode of the laser diode instead of seeing the full laser supply voltage. The highest voltage placed on the laser current driver is the laser supply voltage minus the voltage drop over the laser which varies between the threshold voltage and the operating voltage. Hence, the voltage on the laser current driver lies between the laser supply voltage minus the laser threshold voltage and the laser supply voltage minus the laser operating voltage. Thus, the laser current driver can be made with the lower voltage type of technology which has several advantages. For instance, the power dissipation is reduced. This is due to the fact that internal circuitry and particularly logic can be designed for and run off lower voltages than in the prior art systems.
PCT/IB2005/052089 2004-06-29 2005-06-24 Laser diode circuit, optical pickup unit and optical disc drive apparatus WO2006003575A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP04103035 2004-06-29
EP04103035.4 2004-06-29

Publications (2)

Publication Number Publication Date
WO2006003575A2 WO2006003575A2 (en) 2006-01-12
WO2006003575A3 true WO2006003575A3 (en) 2006-07-20

Family

ID=35783220

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/IB2005/052089 WO2006003575A2 (en) 2004-06-29 2005-06-24 Laser diode circuit, optical pickup unit and optical disc drive apparatus

Country Status (2)

Country Link
TW (1) TW200617906A (en)
WO (1) WO2006003575A2 (en)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0982880A2 (en) * 1998-08-24 2000-03-01 Hitachi, Ltd. Optical transmitter having temperature compensating function and optical transmission system
US6392215B1 (en) * 1999-09-20 2002-05-21 International Business Machines Corporation Laser diode driving circuit
US6510168B1 (en) * 2000-03-06 2003-01-21 Oki Electric Industry Co, Ltd. Laser diode drive circuit
US20040101007A1 (en) * 2002-11-27 2004-05-27 Bozso Ferenc M. High speed data channel including a CMOS VCSEL driver and a high performance photodetector and CMOS photoreceiver

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0982880A2 (en) * 1998-08-24 2000-03-01 Hitachi, Ltd. Optical transmitter having temperature compensating function and optical transmission system
US6392215B1 (en) * 1999-09-20 2002-05-21 International Business Machines Corporation Laser diode driving circuit
US6510168B1 (en) * 2000-03-06 2003-01-21 Oki Electric Industry Co, Ltd. Laser diode drive circuit
US20040101007A1 (en) * 2002-11-27 2004-05-27 Bozso Ferenc M. High speed data channel including a CMOS VCSEL driver and a high performance photodetector and CMOS photoreceiver

Also Published As

Publication number Publication date
TW200617906A (en) 2006-06-01
WO2006003575A2 (en) 2006-01-12

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