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WO2006095540A1 - Composition de réserve positive et procédé servant à former un dessin de réserve - Google Patents

Composition de réserve positive et procédé servant à former un dessin de réserve Download PDF

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Publication number
WO2006095540A1
WO2006095540A1 PCT/JP2006/302558 JP2006302558W WO2006095540A1 WO 2006095540 A1 WO2006095540 A1 WO 2006095540A1 JP 2006302558 W JP2006302558 W JP 2006302558W WO 2006095540 A1 WO2006095540 A1 WO 2006095540A1
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WIPO (PCT)
Prior art keywords
structural unit
acid
group
component
resin component
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Application number
PCT/JP2006/302558
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English (en)
Japanese (ja)
Inventor
Akiyoshi Yamazaki
Waki Ohkubo
Naoto Motoike
Satoshi Maemori
Yuichi Suzuki
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Tokyo Ohka Kogyo Co., Ltd.
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Application filed by Tokyo Ohka Kogyo Co., Ltd. filed Critical Tokyo Ohka Kogyo Co., Ltd.
Publication of WO2006095540A1 publication Critical patent/WO2006095540A1/fr

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F212/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
    • C08F212/02—Monomers containing only one unsaturated aliphatic radical
    • C08F212/04—Monomers containing only one unsaturated aliphatic radical containing one ring
    • C08F212/14—Monomers containing only one unsaturated aliphatic radical containing one ring substituted by heteroatoms or groups containing heteroatoms
    • C08F212/22—Oxygen
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F212/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
    • C08F212/02—Monomers containing only one unsaturated aliphatic radical
    • C08F212/04—Monomers containing only one unsaturated aliphatic radical containing one ring
    • C08F212/14—Monomers containing only one unsaturated aliphatic radical containing one ring substituted by heteroatoms or groups containing heteroatoms
    • C08F212/22—Oxygen
    • C08F212/24—Phenols or alcohols
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F212/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
    • C08F212/02—Monomers containing only one unsaturated aliphatic radical
    • C08F212/04—Monomers containing only one unsaturated aliphatic radical containing one ring
    • C08F212/14—Monomers containing only one unsaturated aliphatic radical containing one ring substituted by heteroatoms or groups containing heteroatoms
    • C08F212/30—Sulfur
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/12—Esters of monohydric alcohols or phenols
    • C08F220/16—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms
    • C08F220/18—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms with acrylic or methacrylic acids
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/26—Esters containing oxygen in addition to the carboxy oxygen
    • C08F220/28—Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety
    • C08F220/283—Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety and containing one or more carboxylic moiety in the chain, e.g. acetoacetoxyethyl(meth)acrylate
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F228/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a bond to sulfur or by a heterocyclic ring containing sulfur
    • C08F228/02—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a bond to sulfur or by a heterocyclic ring containing sulfur by a bond to sulfur
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors

Definitions

  • the present invention relates to a positive resist composition and a resist pattern forming method using the same.
  • a chemically amplified positive resist composition which is proposed as a resist material suitable for exposure using a KrF excimer laser, is generally used as a base resin for acid dissociation of a part of the hydroxyl groups of a polyhydroxystyrene resin. Those protected with a soluble dissolution inhibiting group are used (for example, see Patent Document 1).
  • the acid dissociable, dissolution inhibiting group is represented by a so-called acetal group such as a chain ether group typified by 1-ethoxyethyl group or a cyclic ether group typified by tetrahydrobiranyl group, and tert butyl group.
  • acetal group such as a chain ether group typified by 1-ethoxyethyl group or a cyclic ether group typified by tetrahydrobiranyl group, and tert butyl group.
  • Tertiary alkyl groups, tertiary alkoxycarbonyl groups represented by tert-butoxycarbonyl groups, etc. are mainly used.
  • Patent Document 1 JP-A-4 211258
  • the present invention has been made in view of the above circumstances, and an object thereof is to provide a positive resist composition having excellent resolution and resist pattern shape.
  • the present invention employs the following configuration.
  • the first aspect of the present invention is a positive resist composition
  • a resin component (A) whose alkali solubility is increased by the action of an acid and an acid generator component (B) that generates an acid upon exposure.
  • the resin component (A) comprises a first structural unit (al) derived from hydroxystyrene force, a second structural unit (a2) derived from a (meth) acrylic acid ester having an alcoholic hydroxyl group, and
  • the third structural unit (a3) in which the hydroxyl group of the structural unit derived from hydroxystyrene is protected with an acid dissociable, dissolution inhibiting group and / or a (meth) acrylic acid ester having an alcoholic hydroxyl group is induced.
  • a positive resist composition comprising a second resin component (A2) having a sixth structural unit (a6) in which a hydroxyl group of a derived structural unit is protected with an acid dissociable, dissolution inhibiting group It is.
  • the second aspect of the present invention includes a step of forming a resist film on a substrate using the positive resist composition of the first aspect, a step of exposing the resist film, an image of the resist film, and a resist It is a resist pattern formation method including the process of forming a pattern.
  • (meth) acrylic acid means one or both of methacrylic acid and acrylic acid.
  • Constuent unit means a monomer unit constituting a polymer.
  • the positive resist composition of the present invention has a resin component (A) having an acid dissociable, dissolution inhibiting group and increasing alkali solubility by the action of an acid (hereinafter sometimes referred to as component (A)). And an acid generator component (B) that generates an acid upon exposure (hereinafter also referred to as component (B)).
  • the acid dissociable, dissolution inhibiting group dissociates, thereby changing the entire component (A) from alkali-insoluble to alkali-soluble. To do.
  • the exposed portion when exposed through a mask pattern, or when heated after exposure in addition to exposure, the exposed portion turns alkali-soluble while the unexposed portion remains alkali-insoluble, so alkali development By doing so, a positive resist pattern can be formed.
  • the resin component (A) (hereinafter also referred to as component (A)) includes a first resin component (A1) and a second resin component (A2).
  • the first resin component (A1) (hereinafter also referred to as component (A1)) comprises the following structural unit (al), structural unit (a2), structural unit (a3) and Z or (a4). Have.
  • (a4) a fourth constituent unit in which the constituent alcoholic hydroxyl group derived from a (meth) acrylic acid ester having an alcoholic hydroxyl group is protected with an acid dissociable, dissolution inhibiting group (hereinafter referred to as (a4) unit Sometimes it is.)
  • the (A1) component is a 7th component that is further induced by styrene power.
  • Structural unit (a7) (hereinafter also referred to as (a7) unit).
  • the (al) unit is a structural unit derived from hydroxystyrene force and is represented by the following general formula (I). That is, the hydroxystyrene here is literally hydroxystyrene or
  • R represents a hydrogen atom or a methyl group
  • m represents an integer of:! To 3
  • R is a hydrogen atom or a methyl group, and is preferably a hydrogen atom.
  • m is preferably 1.
  • the position of the hydroxyl group may be any of the o_, m- and p-positions, but the p-position is preferred because it is readily available and inexpensive.
  • the proportion of the structural unit (al) is 2 with respect to all structural units constituting the component (A1).
  • the unit (a2) is a structural unit derived from a (meth) acrylic acid ester having an alcoholic hydroxyl group.
  • the first resin component (A1) has a strong structural unit (a2), so that a part of the hydroxyl group of polyhydroxystyrene is protected with an acid dissociable, dissolution inhibiting group (hereinafter referred to as PHS resin). In other words, the solubility in an alkaline developer is becoming lower.
  • PHS resin acid dissociable, dissolution inhibiting group
  • the first resin component (A1) has, in addition to the hydroxystyrene unit (al), a structural unit (a2) having an alcoholic hydroxyl group that is inferior in alkali solubility to a phenolic hydroxyl group. Therefore, it is possible to reduce the solubility of the copolymer (A1) in an alkaline developer compared to PHS resin. As a result, it is possible to contribute to the reduction of diffetats and the improvement of resolution by lowering the protection rate.
  • the structural unit (a2) is not particularly limited as long as it is a structural unit derived from the (meth) acrylic acid ester force having an alcoholic hydroxyl group having such an action.
  • a structural unit that also induces an aliphatic polycyclic group-containing (meth) acrylate having an alcoholic hydroxyl group is preferred. .
  • Examples of the polycyclic group constituting the aliphatic polycyclic group having an alcoholic hydroxyl group include groups in which one hydrogen atom has been removed from bicycloalkane, tricycloalkane, tetracycloalkane and the like. Specific examples include groups in which one hydrogen atom has been removed from a polycycloalkane such as adamantane, norbornane, isobornane, tricyclodecane, and tetracyclododecane. Such a polycyclic group can be used by appropriately selecting from among many proposed ArF resists. Of these, an adamantyl group, a norbornyl group, and a tetracyclododecanyl group are industrially preferable.
  • a structural unit represented by the following general formula (II) and containing an adamantyl group-containing (meth) acrylate having at least one alcoholic hydroxyl group is derived. It can be used suitably.
  • structural units (a2) represented by the following general formula (II) those most preferred are structural units represented by the following general formula (Ila).
  • R is a hydrogen atom or a methyl group, and X is an integer of 1 to 3.
  • the amount of the structural unit (a2) is, (A1) relative to the total structural units constituting the component 5-40 mole 0/0 preferably tool 5 to 30 mole 0 it is It is more preferably 10 to 25 mol%, and most preferably 10 to 20 mol%, more preferably / 0 .
  • the resolution is improved and the effect of reducing the differential is obtained.
  • the third structural unit (a3) is a structural unit in which the hydroxyl groups of the structural units similar to those listed as the first structural unit (al) are protected with an acid dissociable, dissolution inhibiting group.
  • the hydroxystyrene skeletons in the first structural unit (al) and the third structural unit (a3) present in the component may be the same or different. Preferably they are the same.
  • the fourth structural unit (a4) has the same configuration as that given as the second structural unit (a2). This is a structural unit in which the alcoholic hydroxyl group of the unit is protected with an acid dissociable, dissolution inhibiting group.
  • the (meth) acrylate skeleton in the second structural unit (a2) and the fourth structural unit (a4) present in the component (A1) may be the same or different. Preferably they are the same.
  • both (a3) unit and (a4) unit may be included, or only either one may be included, but (a3) unit only or ( Preferably it contains both a3) units and (a4) units.
  • acid dissociable, dissolution inhibiting groups in the third structural unit (a3) and the fourth structural unit (a4) conventional chemically amplified KrF positive resist compositions and ArF positive resist compositions are used.
  • those proposed as acid dissociable, dissolution inhibiting groups can be appropriately used.
  • cyclic ether group such as tetrahydrofuranyl group, 1 lower alkoxyalkyl group and the like can be used.
  • 1 lower alkoxyalkyl groups represented by the following general formula (III) are particularly preferable. Specific examples thereof include a linear or branched alkoxyalkyl group such as 1 ethoxyethyl group, 1 isopropoxychetyl group, 1-cyclohexyloxycetyl group, 1-adamantoxymethyl group, 2-a Cyclic alkoxyalkyl groups such as damantoxymethyl group, 1-adamantoxychetyl group, and 2-adamantoxychetyl group are listed. Among them, 1_ethoxyethyl Groups are preferred.
  • R 1 represents a hydrogen atom or a linear or branched alkyl group having 1 to 4 carbon atoms
  • R 2 represents a linear or branched alkyl group having 1 to 8 carbon atoms, or 5 to 5 carbon atoms
  • the component (A1) includes, for example, a monomer corresponding to the structural unit (al) and a monomer corresponding to the structural unit (a2) such as azobisisobutyronitrile (AIBN), azobis (2 —After copolymerization by a conventional method such as a known radical polymerization method using a radical polymerization initiator such as methyl propionate, the hydroxyl groups of the structural unit (al) and / or the structural unit (a2) protected with acid dissociable, dissolution inhibiting group makes it possible to manufacture by a method of forming a structural unit (a3) and / or structural unit (a 4).
  • AIBN azobisisobutyronitrile
  • a monomer corresponding to the structural unit (a3) is prepared in advance, the monomer and the monomer corresponding to the structural unit (a2) are copolymerized by a conventional method, and then hydrolyzed to obtain an acid of the structural unit (a3).
  • a part of the dissociable, dissolution inhibiting group is changed to a hydroxyl group to form a structural unit (al), and if necessary, the hydroxyl group of the structural unit (a2) is protected with an acid dissociable, dissolution inhibiting group by a known method. It can also be produced by a method.
  • the proportion of the structural unit (a3) is based on the total structural units constituting the component (A1)
  • mol 0/0 0 is more preferred instrument 10 to 30 mol% are particularly preferred instrument 15 to 30 mol% Is most preferred.
  • the proportion of the structural unit (a4), relative to the total structural units constituting the component (A1) preferably be ⁇ 10 mol 0/0:! ⁇ 8 mol 0/0 More preferably:! ⁇ 6 mol% is particularly preferred:! ⁇ 5 mol% is most preferred.
  • the structural unit (a7) is a structural unit derived from styrene force, and is represented by the following general formula (IV). That is, styrene here means literally both styrene and monomethylstyrene.
  • R is a hydrogen atom or a methyl group.
  • the unit (a7) is not essential, but if it is contained, advantages such as improved depth of focus and improved dry etching resistance can be obtained.
  • the ratio of (a7) units in the first resin component (A1) is 0.5 to 10 of the total of all the structural units constituting the first resin component (A1). More preferably, it is 2 to 5 mol%. (A7) If the number of units exceeds the above range, the solubility in a developer tends to deteriorate.
  • the mass average molecular weight of the first resin component (A1) (polystyrene conversion by gel permeation chromatography, the same shall apply hereinafter) is preferably 3000 or more and 20000 or less, more preferably 5000 or more and 15000 or less. is there.
  • the mass average molecular weight is not more than the upper limit of the above range, the rectangularity of the resulting resist pattern is improved. In addition, generation of micro-bridges can be prevented. Further, when the mass average molecular weight is not less than the lower limit of the above range, etching resistance and heat resistance are good.
  • the micro-bridge here is a kind of development defect, for example, in a line and space pattern, a defect in which a portion close to the surface of an adjacent resist pattern is connected by a resist and is in a bridged state. Microbridges are more likely to occur at higher mass average molecular weights and at higher post-exposure heating (PEB) temperatures.
  • PEB post-exposure heating
  • the dispersity (MwZMn ratio) of the first resin component (A1) is monodisperse with low dispersibility because of excellent resolution. Specifically, it is 1-3, Preferably it is 1-2.
  • the second resin component (A2) (hereinafter also referred to as component (A2)) is composed of a fifth structural unit (a5) derived from hydroxystyrene and a hydroxyl group of the structural unit derived from hydroxystyrene force. And a sixth structural unit (a6) protected with an acid dissociable, dissolution inhibiting group.
  • the fifth structural unit (a5) is the same as the first structural unit (al).
  • the amount of the structural unit (a5) is, (A2) to the total structural units constituting the component that force preferably 2 0-80 Monore 0/0, 30 to 80 Monore 0/0 More preferably, it is more preferably 40 to 80 mol%, and most preferably 50 to 80 mol%.
  • the sixth structural unit (a6) is the same as the third structural unit (a3).
  • the hydroxystyrene skeletons in the fifth structural unit (a5) and the sixth structural unit (a6) present in the component (A2) may be the same or different. Preferably they are the same.
  • the amount of the structural unit (a6) is, (A2) to the total structural units constituting the component that force S preferably 5-50 Monore 0/0, at 10-45 Monore 0/0 more preferably lying force S, and most preferably 15 to 40 mole 0/0, which is it is particularly preferred instrument 20 to 40 mole 0/0.
  • the second resin component (A2) may contain other structural units other than the fifth structural unit (a5) and the sixth structural unit (a6) as long as the effects of the present invention are not impaired. It is preferable that the unit consists of the fifth structural unit (a5) and the sixth structural unit (a6).
  • the first resin component (A1) is not included in the second resin component (A2).
  • the second resin component (A2) can be obtained by protecting a part of the hydroxyl group of the polymer composed of the fifth structural unit (a5) with an acid dissociable, dissolution inhibiting group.
  • the monomer corresponding to the fifth structural unit (a5) and the monomer corresponding to the sixth structural unit (a6) may be copolymerized by a known method.
  • the total power of the units (a5) and (a6) is preferably 50 mol% or more of the total of all the structural units constituting the (A2) component.
  • Guyori is preferably 75 mol 0/0 or more, and most preferably 100 mole 0/0.
  • the mass average molecular weight of the second resin component (A2) is preferably 3000 or more and 30000 or less, more preferably 5000 or more and 25000 or less.
  • the mass average molecular weight is not more than the upper limit of the above range, the rectangularity of the resulting resist pattern is improved. In addition, the occurrence of microbridges can be prevented. Further, when the mass average molecular weight is not less than the lower limit of the above range, etching resistance and heat resistance are good.
  • the dispersity (Mw / Mn ratio) of the second resin component (A2) is a monodispersion with a low dispersity. When it exists, it is excellent in resolution and preferable. Specifically, it is 1-3, Preferably it is 1-2.
  • (A2) is preferably 9 ::! To 1: 9, more preferably 9 ::! To 2: 8, particularly preferably 9 ::! To 4: 6, and most preferably 9 ::! To 7: 3 preferable.
  • it is excellent in the effect of this invention.
  • the separation margin, LER (line edge roughness), and resist pattern shape are also good.
  • the component (A) is used for positive resist compositions such as polyhydroxystyrene resin and (meth) acrylic resin.
  • positive resist compositions such as polyhydroxystyrene resin and (meth) acrylic resin.
  • the ability to mix other resins as appropriate for the effect of the present invention, among the components (A) contained in the positive resist composition, the first resin component (A1) and the second resin component ( The total of A2) is preferably 80% by mass or more, more preferably 90% by mass or more, and most preferably 100% by mass.
  • the component (B) can be used without particular limitation from known acid generators used in conventional chemically amplified resist compositions.
  • acid generators examples include onium salt acid generators such as odonium salts and sulfonium salts, oxime sulfonate acid generators, bisalkyl or bisarylsulfonyldiazomethanes, There are various known diazomethane acid generators such as poly (bissulfonyl) diazomethanes, nitrobenzyl sulfonate acid generators, iminosulfonate acid generators, and disulfone acid generators.
  • onium salt acid generators such as odonium salts and sulfonium salts, oxime sulfonate acid generators, bisalkyl or bisarylsulfonyldiazomethanes
  • diazomethane acid generators such as poly (bissulfonyl) diazomethanes, nitrobenzyl sulfonate acid generators, iminosulfonate acid generators, and disulfone acid generators.
  • the onion salt-based acid generator include trifluoromethane sulfonate or nonafluorobutane sulfonate of difluoro rhododonium, trifluoromethane sulfonate or nonafluorobutane of bis (4_tert_butylphenol) Sulphonate, triphenylsulphonium trifluoromethanesulfonate, heptafluoropropane sulphonate or nonafluorobutane sulphonate, tri (4-methylphenol) snorephonium trifnoleolomethane sulphonate, hepta Funoleopropane sulphonate or its nonafluorobutane sulphonate, dimethyl (4-hydroxynaphtholenos) snorephonium trifunoleolomethane sulphonate, heptafunoleropropane
  • 4-methylphenol s
  • oxime sulfonate-based acid generators include ⁇ - ( ⁇ -toluenesulfonyloxyimino) -benzylcyanide,-(p-chlorobenzenebenzenesulfonyloxymino) -benzilcyanide, ⁇ - (4- Nitrobenzenesulfonyloxymino) -benzylcyanide, ⁇ - (4-nitro-2-trifluoromethylbenzenesulfonyloxymino) -benzylcyanide, ⁇ - (benzenesulfonyloxymino) -4- Black mouth benzyl cyanide, ⁇ - (benzenesulfonyloxymino) -2,4-dichlorobenzyl cyanide, ⁇ - (benzenesulfonyloxymino) -2,6-dichlorobenzyl cyanide, H- (benzenesulfonyloxy) Simino) -4-
  • diazomethane-based PAG any one of conventionally known ones can be appropriately selected for use, and in particular, from the viewpoint of transparency, appropriate acid strength, and alkali solubility.
  • bisalkyl or bisarylsulfonyldiazomethanes represented by the following general formula (V) are preferably used.
  • R 3 and R 4 each independently represents a branched or cyclic alkyl group or aryl group having 3 to 8 carbon atoms, preferably 4 to 7 carbon atoms. More specifically, examples of R 3 and R 4 include a tert_butyl group, a cyclohexyleno group, and a phenyl group. Among these, a cyclohexyl group is preferable because the rectangularity of the resulting resist pattern is further improved and the resolution is improved. A possible reason for this is that the cyclohexyl group is a bulky group, so that the generated acid is difficult to diffuse in the resist.
  • bisalkyl or bisarylsulfonyldiazomethanes include bis (isopropylsulfoninole) diazomethane, bis (ptoluenesulfonyl) diazomethane, and bis (1,1-dimethylethylsulfonyl).
  • examples thereof include diazomethane, bis (cyclohexylsulfonyl) diazomethane, bis (2,4-dimethylphenylsulfonyl) diazomethane, and the like.
  • one type of acid generator may be used alone, or two or more types may be used in combination.
  • the component (B) preferably contains a diazomethane acid generator and / or an onium salt acid generator.
  • a diazomethane acid generator and / or an onium salt acid generator it is preferable to use a combination of at least one diazomethane acid generator and at least one onium salt acid generator in order to obtain good resolution and rectangularity.
  • the component (B) preferably contains 40 to 95% by mass of a diazomethane acid generator, more preferably 40 to 80% by mass, and still more preferably 40 to 70% by mass. Most preferably, it is 45-65 mass%. On the other hand, it is more preferable that the component (B) contains 5 to 60% by mass of an onium salt acid generator, more preferably 10 to 60% by mass, and further preferably 20 to 60% by mass. Most preferably, it is 30-60 mass%.
  • the total amount of the diazomethane acid generator and the onium salt acid generator may be 100% by mass, preferably 80% by mass or more.
  • the content of the component (B) in the resist composition is 0.5 to 30 parts by mass, preferably 1 to 10 parts by mass with respect to 100 parts by mass of the component (A). By setting it within the above range, the storage stability is improved. Further, the pattern can be sufficiently formed.
  • the positive resist composition of the present invention has at least one acid-dissociable, dissolution-inhibiting group as an optional component, and the dissolution-inhibiting group is dissociated by the action of an acid generated from the component (B).
  • a phenol derivative having a mass average molecular weight of 200 to 1000 and having 1 to 6 substituted or unsubstituted benzene nuclei is preferable.
  • Specific examples include compounds represented by the following general formula (1).
  • R ′ is an acid dissociable, dissolution inhibiting group.
  • the acid dissociable, dissolution inhibiting group R ' can be arbitrarily selected from those known so far as chemically amplified positive resists.
  • tertiary alkyloxycarbonyl groups such as tert-butyloxycarbonyl group, tert-amyloxycarbonyl group; tert-butyloxycarbonylmethyl group, tert-butyloxycarbonyl group Tertiary alkyloxycarbonylalkyl group such as til group; Tertiary alkyl group such as tert-butyl group and tert-amyl group; Cyclic ether group such as tetrahydrobiranyl group and tetrahydrofuranyl group; Ethoxyethyl group, methoxy An alkoxyalkyl group such as a propyl group is preferable.
  • a tert-butyloxycarbonyl group a tert-butyloxycarbonylmethyl group, a tert-butyl group, a tetrahydrobiranyl group, an ethoxyethyl group, a 1-methylcyclohexyl group, and a 1-ethylcyclohexyl group are preferable.
  • At least one acid dissociable, dissolution inhibiting group R ′ needs to use a carboxylic acid generating group such as a tertiary alkyloxycarbonylalkyl group.
  • the component (C) is usually used in the range of 0.:! To 50 parts by mass, preferably 1 to 20 parts by mass with respect to 100 parts by mass of the component (A).
  • the positive resist composition of the present invention can further contain a nitrogen-containing organic compound (D) as an optional component in order to improve the resist pattern shape, stability over time, and the like. It can. Since a wide variety of component (D) has already been proposed, any known one can be used, but aliphatic amines, particularly secondary aliphatic amines and tertiary aliphatic amines are preferred. .
  • Aliphatic amines contain at least one hydrogen atom of ammonia NH and have 12 or more carbon atoms.
  • Examples include amines substituted with alkyl groups or hydroxyalkyl groups below (alkylamines or alkylalcoholamines). Specific examples thereof include monoalkylamines such as n-hexylamine, n-heptylamine, n-octylamine, n-nonylamine, n-decylamine; jetylamine, di-n-propylamine, di-n-heptylamine, di-n-octylamine, Dialkylamines such as dicyclohexylamine; trimethylamine, triethylamine, tri-n-propylamine, tri-n-butylamine, tri-n-hexylamine, tri-n-pentylamine, tri-n-ptyluamine, tri-n-octylamine Trialkylamines such as tri-nylamine, tri-n-decanylamine, tri-n-dodecylamine; diethanol
  • Component (D) is usually used in the range of 0.01 to 5.0 parts by mass per 100 parts by mass of component (A).
  • an organic carboxylic acid or phosphorus oxoacid or a derivative thereof is further included as an optional component.
  • (E) (hereinafter referred to as component (E)) can be contained.
  • the component (D) and the component (E) can be used in combination, or any of four types can be used.
  • organic carboxylic acids examples include malonic acid, succinic acid, malic acid, succinic acid, and benzoic acid. Acid, salicylic acid and the like are preferred.
  • Phosphorus oxoacids or derivatives thereof include phosphoric acid, phosphoric acid di-n-butyl ester, phosphoric acid diphenyl ester and other phosphoric acid or derivatives such as esters thereof, phosphonic acid, phosphonic acid dimethyl ester, phosphonic acid.
  • Phosphonic acids such as acid-di-n-butyl ester, phenylphosphonic acid, diphenylenoestenole phosphonate, dibenzenoleestenole phosphonate and derivatives thereof such as phosphinic acid, phosphinic acid such as phenylphosphinic acid And derivatives thereof such as esters thereof, among which phosphonic acid is particularly preferable.
  • Component (E) is used in a proportion of 0.01 to 5.0 parts by mass per 100 parts by mass of component (A).
  • the positive resist composition of the present invention may further contain miscible additives as desired, for example, additional resins for improving the performance of the resist film, surfactants for improving coating properties, plasticizers, It is possible to add a stabilizer, a colorant, an antihalation agent, etc. as appropriate.
  • the positive resist composition of the present invention is produced by dissolving the above-described component (A), component (B), and optionally component (C) and any of the components described later in an organic solvent. You can.
  • the component (A) is preferably prepared in advance by mixing the component (A1), the component (A2), and, if necessary, other resin components.
  • each component to be used can be dissolved to form a uniform solution.
  • two or more types can be appropriately selected and used.
  • ratatones such as ⁇ -buta-mouth rataton, ketones such as acetone, methyl ethyl ketone, cyclohexanone, methyl isoamyl ketone, 2_heptanone, ethylene glycol, ethylene glycolol monoacetate, diethylene glycolol, Diethylene glycol monoacetate, propylene glycol, propylene glycol monoacetate, dipropylene glycol, or monomethyl ether of dipropylene glycol monoacetate, Polyhydric alcohols such as monoethyl ether, monopropyl ether, monobutyl ether or monophenyl ether and derivatives thereof, cyclic ethers such as dioxane, methyl lactate, ethyl lactate (EL), methyl acetate, acetic acid Examples thereof include esters such as ethyl, butyl acetate, methyl pyruvate, ethyl pyruvate, methyl methy
  • organic solvents may be used alone or as a mixed solvent of two or more.
  • a mixed solvent obtained by mixing propylene glycol monomethyl ether acetate (PGMEA) and a polar solvent is preferable.
  • the mixing ratio (mass ratio) may be appropriately determined in consideration of the compatibility between PGMEA and the polar solvent, preferably 1: 9 to 9: 1, more preferably 2: 8 to 8: 2. It is preferable to be within the range.
  • the mass ratio of PGMEA: EL is preferably 1: 9 to 9: 1, more preferably 2: 8 to 8: 2.
  • a mixed solvent of at least one selected from PGMEA and EL and ⁇ -petit-mouth rataton is also preferable.
  • the mixing ratio of the former and the latter is preferably 70: 30-95: 5.
  • the amount of the organic solvent used is not particularly limited, it is a concentration that can be applied to a substrate and the like, and is appropriately set according to the coating film thickness.
  • the solid content concentration of the resist composition is 2 to 20 mass. %, Preferably 5 to 15% by mass.
  • the resist pattern can be formed as follows, for example.
  • the positive resist composition is applied onto a substrate such as silicon wafer with a spinner and the like, and subjected to a pre-beta for 40 to 120 seconds, preferably 60 to 90 seconds under a temperature condition of 80 to 150 ° C. Form.
  • the resist film is selectively exposed with a KrF excimer laser beam through a desired mask pattern using, for example, a KrF exposure apparatus, and then subjected to PEB (post-exposure heating) at a temperature of 80 to 150 ° C. 40-: 120 seconds, preferably 60-90 seconds.
  • PEB post-exposure heating
  • this is developed using an alkali developer, for example, an aqueous solution of 0.1 to 10% by mass of tetramethyl ammonium hydroxide. In this way, a resist pattern faithful to the mask pattern can be obtained.
  • An organic or inorganic antireflection layer can be provided between the substrate and the coating layer of the resist composition.
  • the wavelength used for the exposure is not particularly limited, ArF excimer laser, KrF excimer laser, F excimer laser, EUV (extreme ultraviolet), VUV (vacuum ultraviolet), EB (electron beam),
  • the photoresist composition according to the present invention is effective for a KrF excimer laser.
  • the present invention it is possible to provide a positive resist composition and a resist pattern forming method capable of obtaining good resolution and resist pattern shape.
  • the separation resolution is particularly excellent.
  • a positive resist composition was prepared with the composition shown in Table 1 below.
  • Table 1 the numbers in [] indicate the amount (parts by mass).
  • (A2) -1 a resin comprising structural units represented by the following chemical formula.
  • PAGl Triphenylsulfonyl nonafluorobutane sulfonate
  • PAG2 Bis (2,4-dimethylphenylsulfonyl) diazomethane
  • PAG3 Bis (cyclohexylsulfonyl) diazomethane
  • (C) -l a dissolution inhibitor represented by the following chemical formula.
  • ADD 1 Surfactant XR_ 104 (Dainippon Ink Chemical Co., Ltd.)
  • An organic antireflection film (product name: DUV-44, manufactured by Brew Science Co., Ltd., product name: DUV-44) was heated on an 8-inch silicon wafer at 225 ° C for 60 seconds to prepare a substrate having a thickness of 65 nm.
  • the obtained positive resist composition was applied onto a substrate using a spinner, pre-betaed at 100 ° C. for 60 seconds on a hot plate, and dried to form a resist layer having a thickness of 270 nm.
  • 3 ⁇ which is a measure of LER, was obtained as an evaluation of the line edge roughness (LER) at which the surface of the side wall of the line pattern becomes uneven.
  • 3 ⁇ is the register of the sample using the side director SEM (trade name “S — 9220” manufactured by Hitachi, Ltd.). This is a triple value ( 3 ⁇ ) of the standard deviation ( ⁇ ) calculated from the results of measuring the width of the strike pattern at 32 locations. This 3 ⁇ means that the smaller the value, the smaller the roughness and the uniform width resist pattern was obtained.
  • Eop Sensitivity when forming a 130 nmL / S pattern of 1: 1 (mj / cm 2 ) shape>
  • the cross-sectional shape of the 130 nmLZS pattern obtained above was observed with a scanning electron microscope. As a result, those with good rectangularity were marked with ⁇ , and those with insufficient rectangularity were marked with X.
  • the resolution and resist pattern can be obtained by using the components (A1) and (A2) together as the base resin of the resist composition. It was found to be excellent in shape. In addition, LER was excellent. Industrial applicability
  • the present invention can be applied to a positive resist yarn composition used in lithography technology and a resist pattern forming method using the same in the manufacture of semiconductor elements and liquid crystal display elements.

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  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Organic Chemistry (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Emergency Medicine (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)

Abstract

Il est exposé une composition de réserve positive comprenant un composant résine (A), dont la solubilité dans un alcali est accrue par l'action d'un acide, et un composant générateur d'acide (B) lequel génère un acide lorsqu'il est exposé à de la lumière. Cette composition de réserve positive est caractérisée en ce que le composant résine (A) comprend un premier composant résine (A1) ayant une première unité constitutive dérivée d'un hydroxystyrène, une deuxième unité constitutive dérivée d'un (méth)acrylate ayant un groupe hydroxyle alcoolique et une troisième unité constitutive, le groupe hydroxyle de l'unité constitutive dérivée d'un hydroxystyrène étant protégé par un groupe inhibiteur de dissolution libérable par un acide et/ou une quatrième unité constitutive, le groupe hydroxyle alcoolique de l'unité constitutive dérivée d'un (méth)acrylate ayant un groupe hydroxyle alcoolique étant protégé par un groupe inhibiteur de dissolution libérable par un acide, et un second composant résine (A2) ayant une cinquième unité constitutive dérivée d'un hydroxystyrène et une sixième unité constitutive, le groupe hydroxyle de l'unité constitutive dérivée d'un hydroxystyrène étant protégé par un groupe inhibiteur de dissolution libérable par un acide.
PCT/JP2006/302558 2005-03-04 2006-02-14 Composition de réserve positive et procédé servant à former un dessin de réserve WO2006095540A1 (fr)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012136692A (ja) * 2010-11-17 2012-07-19 Rohm & Haas Electronic Materials Llc 感光性コポリマーおよびフォトレジスト組成物
CN105934448A (zh) * 2014-01-31 2016-09-07 三菱瓦斯化学株式会社 (甲基)丙烯酸酯化合物、(甲基)丙烯酸类共聚物和包含其的感光性树脂组合物

Families Citing this family (4)

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Publication number Priority date Publication date Assignee Title
WO2014175275A1 (fr) 2013-04-23 2014-10-30 三菱瓦斯化学株式会社 Nouveau compose d'ester alicyclique et copolymere (meth)acrylique et composition de resine photosensible les contenant
KR102142648B1 (ko) 2013-12-16 2020-08-10 삼성디스플레이 주식회사 감광성 수지 조성물, 이를 이용한 유기막 형성방법 및 유기막을 포함하는 표시장치
EP3106454A4 (fr) 2014-02-14 2017-08-30 Mitsubishi Gas Chemical Company, Inc. Procédé d'obtention d'un nouveau composé ester alicyclique, nouveau composé ester alicyclique, copolymère (méth)acrylique obtenu par polymérisation dudit composé et composition de résine photosensible utilisant ledit copolymère
JP5802785B2 (ja) * 2014-03-24 2015-11-04 富士フイルム株式会社 パターン形成方法及びレジスト組成物

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09230588A (ja) * 1995-12-20 1997-09-05 Tokyo Ohka Kogyo Co Ltd 化学増幅型レジスト組成物及びそれに用いる酸発生剤
JPH11352677A (ja) * 1998-06-10 1999-12-24 Jsr Corp 感放射線性樹脂組成物
JP2000227658A (ja) * 1999-02-05 2000-08-15 Sumitomo Chem Co Ltd 化学増幅型ポジ型レジスト組成物
JP2000231193A (ja) * 1999-02-09 2000-08-22 Jsr Corp 感放射線性樹脂組成物
JP2000284482A (ja) * 1999-01-28 2000-10-13 Wako Pure Chem Ind Ltd レジスト組成物
JP2001272782A (ja) * 2000-03-28 2001-10-05 Sumitomo Chem Co Ltd 化学増幅型ポジ型レジスト組成物
WO2004059392A1 (fr) * 2002-12-26 2004-07-15 Tokyo Ohka Kogyo Co., Ltd. Composition de reserve positive et procede de formation d'un motif de reserve
JP2005004092A (ja) * 2003-06-13 2005-01-06 Tokyo Ohka Kogyo Co Ltd ポジ型レジスト組成物およびレジストパターン形成方法
WO2005026842A1 (fr) * 2003-09-18 2005-03-24 Tokyo Ohka Kogyo Co., Ltd. Composition de photoresine positive et procede de formation de configuration de reserve

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09230588A (ja) * 1995-12-20 1997-09-05 Tokyo Ohka Kogyo Co Ltd 化学増幅型レジスト組成物及びそれに用いる酸発生剤
JPH11352677A (ja) * 1998-06-10 1999-12-24 Jsr Corp 感放射線性樹脂組成物
JP2000284482A (ja) * 1999-01-28 2000-10-13 Wako Pure Chem Ind Ltd レジスト組成物
JP2000227658A (ja) * 1999-02-05 2000-08-15 Sumitomo Chem Co Ltd 化学増幅型ポジ型レジスト組成物
JP2000231193A (ja) * 1999-02-09 2000-08-22 Jsr Corp 感放射線性樹脂組成物
JP2001272782A (ja) * 2000-03-28 2001-10-05 Sumitomo Chem Co Ltd 化学増幅型ポジ型レジスト組成物
WO2004059392A1 (fr) * 2002-12-26 2004-07-15 Tokyo Ohka Kogyo Co., Ltd. Composition de reserve positive et procede de formation d'un motif de reserve
JP2005004092A (ja) * 2003-06-13 2005-01-06 Tokyo Ohka Kogyo Co Ltd ポジ型レジスト組成物およびレジストパターン形成方法
WO2005026842A1 (fr) * 2003-09-18 2005-03-24 Tokyo Ohka Kogyo Co., Ltd. Composition de photoresine positive et procede de formation de configuration de reserve

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012136692A (ja) * 2010-11-17 2012-07-19 Rohm & Haas Electronic Materials Llc 感光性コポリマーおよびフォトレジスト組成物
CN105934448A (zh) * 2014-01-31 2016-09-07 三菱瓦斯化学株式会社 (甲基)丙烯酸酯化合物、(甲基)丙烯酸类共聚物和包含其的感光性树脂组合物

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TW200643627A (en) 2006-12-16
JP4184352B2 (ja) 2008-11-19

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