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WO2006076044A3 - Nanostructure-based transistor - Google Patents

Nanostructure-based transistor Download PDF

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Publication number
WO2006076044A3
WO2006076044A3 PCT/US2005/027336 US2005027336W WO2006076044A3 WO 2006076044 A3 WO2006076044 A3 WO 2006076044A3 US 2005027336 W US2005027336 W US 2005027336W WO 2006076044 A3 WO2006076044 A3 WO 2006076044A3
Authority
WO
WIPO (PCT)
Prior art keywords
electrode
catalyst region
electrodes
nanostructure
nanostructures
Prior art date
Application number
PCT/US2005/027336
Other languages
French (fr)
Other versions
WO2006076044A2 (en
Inventor
Thomas E Kopley
Jennifer Lu
Nicolas J Moll
Mark R Hueschen
Original Assignee
Agilent Technologies Inc
Thomas E Kopley
Jennifer Lu
Nicolas J Moll
Mark R Hueschen
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agilent Technologies Inc, Thomas E Kopley, Jennifer Lu, Nicolas J Moll, Mark R Hueschen filed Critical Agilent Technologies Inc
Publication of WO2006076044A2 publication Critical patent/WO2006076044A2/en
Publication of WO2006076044A3 publication Critical patent/WO2006076044A3/en

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/481—Insulated gate field-effect transistors [IGFETs] characterised by the gate conductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
    • H10K85/221—Carbon nanotubes

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Thin Film Transistor (AREA)
  • Carbon And Carbon Compounds (AREA)

Abstract

Nanotube-based transistors and methods for implementing such nanotube-based transistors are provided. More particularly, systems and methods are provided for implementing a first electrode (105) that subsumes a catalyst region (102) from which nanostructures, such as nanotubes (103), are grown, and an annular second electrode (107) around the first electrode (105), wherein at least one of the nanostructures couples the first and second electrodes (105, 107). According to one embodiment, a catalyst region (102) is disposed on a substrate (101), and the catalyst region (102) may be patterned into a desired shape/size. Carbon nanotubes (103) are grown from the catalyst region (102). First and second electrodes (105, 107) are then deposited, where the first electrode (105) covers the catalyst region (102) and the annular second electrode (107) is disposed around the first electrode (105). In one embodiment, the second electrode (107) is circular and concentric with the first electrode (105). At least one of the carbon nanotubes (103) couples the first and second electrodes (105, 107).
PCT/US2005/027336 2004-07-30 2005-07-29 Nanostructure-based transistor WO2006076044A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US59263004P 2004-07-30 2004-07-30
US60/592,630 2004-07-30

Publications (2)

Publication Number Publication Date
WO2006076044A2 WO2006076044A2 (en) 2006-07-20
WO2006076044A3 true WO2006076044A3 (en) 2006-12-28

Family

ID=36678049

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2005/027336 WO2006076044A2 (en) 2004-07-30 2005-07-29 Nanostructure-based transistor

Country Status (1)

Country Link
WO (1) WO2006076044A2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100993167B1 (en) 2006-08-07 2010-11-09 서울대학교산학협력단 Nanostructure Sensor
WO2013006027A1 (en) * 2011-07-01 2013-01-10 Mimos Berhad Method for use in fabricating nanomaterials based devices

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020014667A1 (en) * 2000-07-18 2002-02-07 Shin Jin Koog Method of horizontally growing carbon nanotubes and field effect transistor using the carbon nanotubes grown by the method
US20030214054A1 (en) * 2002-05-20 2003-11-20 Fujitsu Limited Electron device and process of manufacturing thereof
JP2004067413A (en) * 2002-08-02 2004-03-04 Nec Corp Catalyst carrying substrate, method for growing carbon nanotube by using the same, and transistor using carbon nanotube
US20040238887A1 (en) * 2001-07-05 2004-12-02 Fumiyuki Nihey Field-effect transistor constituting channel by carbon nano tubes

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020014667A1 (en) * 2000-07-18 2002-02-07 Shin Jin Koog Method of horizontally growing carbon nanotubes and field effect transistor using the carbon nanotubes grown by the method
US20040238887A1 (en) * 2001-07-05 2004-12-02 Fumiyuki Nihey Field-effect transistor constituting channel by carbon nano tubes
US20030214054A1 (en) * 2002-05-20 2003-11-20 Fujitsu Limited Electron device and process of manufacturing thereof
JP2004067413A (en) * 2002-08-02 2004-03-04 Nec Corp Catalyst carrying substrate, method for growing carbon nanotube by using the same, and transistor using carbon nanotube

Also Published As

Publication number Publication date
WO2006076044A2 (en) 2006-07-20

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