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WO2005083810A3 - Structure programmable et dispositif comprenant un conducteur d'ions d'oxyde metallique et procedes de formation associes - Google Patents

Structure programmable et dispositif comprenant un conducteur d'ions d'oxyde metallique et procedes de formation associes Download PDF

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Publication number
WO2005083810A3
WO2005083810A3 PCT/US2005/005705 US2005005705W WO2005083810A3 WO 2005083810 A3 WO2005083810 A3 WO 2005083810A3 US 2005005705 W US2005005705 W US 2005005705W WO 2005083810 A3 WO2005083810 A3 WO 2005083810A3
Authority
WO
WIPO (PCT)
Prior art keywords
forming
metal oxide
ion conductor
oxide ion
same
Prior art date
Application number
PCT/US2005/005705
Other languages
English (en)
Other versions
WO2005083810A2 (fr
Inventor
Michael N Kozicki
Maria Mitkova
Chakravarthy Gopalan
Muralikrishnan Balakraishnan
Original Assignee
Axon Technologies Corp
Michael N Kozicki
Maria Mitkova
Chakravarthy Gopalan
Muralikrishnan Balakraishnan
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Axon Technologies Corp, Michael N Kozicki, Maria Mitkova, Chakravarthy Gopalan, Muralikrishnan Balakraishnan filed Critical Axon Technologies Corp
Publication of WO2005083810A2 publication Critical patent/WO2005083810A2/fr
Publication of WO2005083810A3 publication Critical patent/WO2005083810A3/fr

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/041—Modification of switching materials after formation, e.g. doping
    • H10N70/046—Modification of switching materials after formation, e.g. doping by diffusion, e.g. photo-dissolution
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/24—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies
    • H10N70/245—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies the species being metal cations, e.g. programmable metallization cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/841—Electrodes
    • H10N70/8416—Electrodes adapted for supplying ionic species
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/883—Oxides or nitrides
    • H10N70/8833—Binary metal oxides, e.g. TaOx

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)

Abstract

L'invention porte sur une structure programmable micro-électronique qui permet de stocker des informations, et sur des procédés de formation et de programmation de la structure. La structure programmable comprend généralement un conducteur d'ions d'oxyde métallique et une pluralité d'électrodes. Les propriétés électriques de la structure peuvent être modifiées par application d'énergie sur la structure, et les informations peuvent donc être stockées au moyen de la structure.
PCT/US2005/005705 2004-02-23 2005-02-23 Structure programmable et dispositif comprenant un conducteur d'ions d'oxyde metallique et procedes de formation associes WO2005083810A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US54684904P 2004-02-23 2004-02-23
US60/546,849 2004-02-23

Publications (2)

Publication Number Publication Date
WO2005083810A2 WO2005083810A2 (fr) 2005-09-09
WO2005083810A3 true WO2005083810A3 (fr) 2006-01-12

Family

ID=34910821

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2005/005705 WO2005083810A2 (fr) 2004-02-23 2005-02-23 Structure programmable et dispositif comprenant un conducteur d'ions d'oxyde metallique et procedes de formation associes

Country Status (1)

Country Link
WO (1) WO2005083810A2 (fr)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101603161B1 (ko) * 2009-05-27 2016-03-15 삼성전자주식회사 도전 구조물, 이의 형성 방법, 이를 포함하는 반도체 소자 및 그 제조 방법
WO2017091560A1 (fr) 2015-11-24 2017-06-01 Arizona Board Of Regents On Behalf Of Arizona State University Système et dispositif de soupape microfluidique à basse tension pour la régulation de débit de fluide
WO2018175973A1 (fr) 2017-03-23 2018-09-27 Arizona Board Of Regents On Behalf Of Arizona State University Fonctions physiques inclonables à cellules de métallisation programmables à base d'oxyde de cuivre-silicium
US10466969B2 (en) 2017-05-08 2019-11-05 Arizona Board Of Regents On Behalf Of Arizona State University Tunable true random number generator using programmable metallization cell(s)
CN110165303B (zh) * 2019-06-10 2022-04-26 南京理工大学北方研究院 二次电池及其制备方法、用电设备
US11244722B2 (en) 2019-09-20 2022-02-08 Arizona Board Of Regents On Behalf Of Arizona State University Programmable interposers for electrically connecting integrated circuits
US11935843B2 (en) 2019-12-09 2024-03-19 Arizona Board Of Regents On Behalf Of Arizona State University Physical unclonable functions with silicon-rich dielectric devices

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030045054A1 (en) * 2001-08-29 2003-03-06 Campbell Kristy A. Method of forming non-volatile resistance variable devices, method of forming a programmable memory cell of memory circuitry, and a non-volatile resistance variable device
WO2003079463A2 (fr) * 2002-03-15 2003-09-25 Axon Technologies Corporation Structure programmable, reseau comprenant cette structure et procedes de production de celle-ci

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030045054A1 (en) * 2001-08-29 2003-03-06 Campbell Kristy A. Method of forming non-volatile resistance variable devices, method of forming a programmable memory cell of memory circuitry, and a non-volatile resistance variable device
WO2003079463A2 (fr) * 2002-03-15 2003-09-25 Axon Technologies Corporation Structure programmable, reseau comprenant cette structure et procedes de production de celle-ci

Also Published As

Publication number Publication date
WO2005083810A2 (fr) 2005-09-09

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