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WO2004112133A1 - Metal base device and ic card module manufacturing method - Google Patents

Metal base device and ic card module manufacturing method Download PDF

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Publication number
WO2004112133A1
WO2004112133A1 PCT/JP2004/008534 JP2004008534W WO2004112133A1 WO 2004112133 A1 WO2004112133 A1 WO 2004112133A1 JP 2004008534 W JP2004008534 W JP 2004008534W WO 2004112133 A1 WO2004112133 A1 WO 2004112133A1
Authority
WO
WIPO (PCT)
Prior art keywords
metal substrate
metal
metal base
die pad
longitudinal direction
Prior art date
Application number
PCT/JP2004/008534
Other languages
French (fr)
Japanese (ja)
Inventor
Masachika Masuda
Chikao Ikenaga
Original Assignee
Dai Nippon Printing Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dai Nippon Printing Co., Ltd. filed Critical Dai Nippon Printing Co., Ltd.
Priority to KR1020057001936A priority Critical patent/KR101030899B1/en
Publication of WO2004112133A1 publication Critical patent/WO2004112133A1/en
Priority to US11/086,238 priority patent/US7271471B2/en

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Classifications

    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06K—GRAPHICAL DATA READING; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS
    • G06K19/00—Record carriers for use with machines and with at least a part designed to carry digital markings
    • G06K19/06—Record carriers for use with machines and with at least a part designed to carry digital markings characterised by the kind of the digital marking, e.g. shape, nature, code
    • G06K19/067—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components
    • G06K19/07—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components with integrated circuit chips
    • G06K19/077—Constructional details, e.g. mounting of circuits in the carrier
    • G06K19/07745—Mounting details of integrated circuit chips
    • G06K19/07747—Mounting details of integrated circuit chips at least one of the integrated circuit chips being mounted as a module
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06K—GRAPHICAL DATA READING; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS
    • G06K19/00—Record carriers for use with machines and with at least a part designed to carry digital markings
    • G06K19/06—Record carriers for use with machines and with at least a part designed to carry digital markings characterised by the kind of the digital marking, e.g. shape, nature, code
    • G06K19/067—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components
    • G06K19/07—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components with integrated circuit chips
    • G06K19/077—Constructional details, e.g. mounting of circuits in the carrier
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06K—GRAPHICAL DATA READING; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS
    • G06K19/00—Record carriers for use with machines and with at least a part designed to carry digital markings
    • G06K19/06—Record carriers for use with machines and with at least a part designed to carry digital markings characterised by the kind of the digital marking, e.g. shape, nature, code
    • G06K19/067—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components
    • G06K19/07—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components with integrated circuit chips
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06K—GRAPHICAL DATA READING; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS
    • G06K19/00—Record carriers for use with machines and with at least a part designed to carry digital markings
    • G06K19/06—Record carriers for use with machines and with at least a part designed to carry digital markings characterised by the kind of the digital marking, e.g. shape, nature, code
    • G06K19/067—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components
    • G06K19/07—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components with integrated circuit chips
    • G06K19/077—Constructional details, e.g. mounting of circuits in the carrier
    • G06K19/07749—Constructional details, e.g. mounting of circuits in the carrier the record carrier being capable of non-contact communication, e.g. constructional details of the antenna of a non-contact smart card
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    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49541—Geometry of the lead-frame
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    • H01L23/50—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor for integrated circuit devices, e.g. power bus, number of leads
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    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
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    • H01L2224/484—Connecting portions
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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    • H01L2924/01004—Beryllium [Be]
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Definitions

  • the present invention is used for a metal base device for a transfer mold type ic card module used for a non-contact type ic card and a non-contact ic card using the metal base device.
  • the present invention relates to a method of manufacturing a transfer mold type ic card module.
  • Such a non-contact type IC card has, for example, as shown in FIG. 8 (a), an IC module 812, and this IC module 812 is connected to an antenna 811 and its circuit
  • the configuration is usually as shown in Fig. 8 (b).
  • 810 is an IC card
  • 811 is an antenna
  • 812 is an IC module
  • 813 is a terminal (of the IC module).
  • the metal substrate of the unit is formed by processing a material for processing, and a region for mounting an IC chip (die pad portion) and an antenna circuit are formed. It has a connection area and an input / output terminal area, and these areas are partially connected. It is divided and formed in a connected state.
  • these territories are connected to the processing material at the joints, and the processing material is multi-faced with a unit metal substrate. After mounting the IC chip on the metal substrate of each unit and sealing it with resin, predetermined joints are cut and separated.
  • a unit metal substrate may be referred to as a lead or a lead frame.
  • a unit in which a unit of metal substrate is multi-faced and connected directly to a material for processing or by connecting a frame portion to a frame portion by a connecting portion may be referred to as a lead frame.
  • reference numeral 910 denotes a metal substrate
  • 920 denotes an IC chip
  • 930 denotes a sealing resin
  • 931 denotes a resin leak
  • 940 denotes a bonding wire.
  • Fig. 7 (b) shows an IC chip mounted on each die pad portion 621 of the metal substrate member, which is imposed and etched as shown in Fig. 7 (a), and is further provided with a resin by a transfer method. Shows the sealed state.
  • FIGs. 7 (a) and (b) 611 is a processing material
  • 620 is a metal substrate of a unit
  • 621 is a die pad
  • 621H is a half-etched portion
  • 622A and 622B are terminals (to be connected to an antenna)
  • 625 Is a through hole
  • 626 is a connecting portion
  • 628 is a sprocket
  • 640 is a sealing resin.
  • the present invention has been made in view of the above points, and a metal base device and a method of manufacturing an IC card module capable of manufacturing an IC module for a non-contact type IC card with higher productivity.
  • the purpose is to provide.
  • the present invention provides a metal substrate device having a large number of metal substrates for a non-contact IC card module, which is formed continuously in the longitudinal direction by etching a strip-shaped processing material extending in the longitudinal direction.
  • Each metal substrate has a die pad for mounting the IC chip, a resin sealing area including the die pad, and both sides along the longitudinal direction outside the die pad and the resin sealing area.
  • Each has at least a pair of antenna terminals protruding, and the antenna terminal of one metal base and the antenna terminal of the metal base adjacent to the metal base in the longitudinal direction are arranged in the width direction of the processing material.
  • This is a metal substrate device that is characterized by being in a common area.
  • each metal base material is connected to the material for processing by a connecting portion provided on two connecting lines extending in the longitudinal direction, and cut along the two connecting lines.
  • each metal substrate is separated from the other part of the material for processing by the metal substrate apparatus.
  • each metal base has two pairs of antenna terminals protruding on both sides along the longitudinal direction outside the die pad and the resin sealing region.
  • Material device According to the present invention, the die pad of each metal base material has a larger shape than the IC chip, and the IC chip mounting area of the die pad is formed by half-etching the material for processing by applying a half-etching method to the material for processing. It is a metal base device characterized by being formed thinner than the thickness.
  • the present invention is a metal substrate device, wherein a concave portion for improving adhesion to a resin is provided in a resin sealing region of each metal substrate.
  • the present invention is the metal base device, wherein each metal base has an internal terminal provided between the die pad and the antenna terminal.
  • the present invention is the metal base device, wherein the processing material is made of an Au material or a 42 alloy.
  • the present invention is a metal substrate device having a large number of metal substrates for a non-contact IC card module, which is formed continuously in the longitudinal direction by etching a strip-shaped processing material extending in the longitudinal direction.
  • Each of the metal bases has a die pad for mounting the IC chip, a resin sealing area including the die pad, and both sides along the longitudinal direction outside the die pad and the resin sealing area. It has at least a pair of projecting antenna terminals, and the antenna terminal of one metal base and the antenna terminal of the metal base adjacent in the longitudinal direction of the metal base are arranged in the width direction of the processing material.
  • a metal substrate device characterized by being in a common area of the above, mounting an IC chip on a die pad of each metal substrate, and a predetermined portion of the IC chip and the metal substrate. Connecting wires to each other by wire bonding, providing resin in the resin sealing area of each metal base to cover the IC chip and wires, and sealing the resin. And a method of manufacturing an IC card module.
  • the present invention is the metal base device, wherein the working material is made of Au material or 42 alloy.
  • an IC module for a non-contact type IC card can be manufactured with higher mass productivity.
  • the metal base unit has a die pad for mounting an IC chip, and an antenna terminal for connecting to an antenna coil is located outside the die pad and the resin sealing region. Two or one antenna coil for two loops There are four.
  • the metal base of the unit is placed in the longitudinal direction of the processing material so that the antenna terminal areas of the metal bases adjacent to each other in the longitudinal direction of the strip-shaped processing material overlap as a common area in the width direction. I have. After the metal base of each unit is sealed with resin, just cut a predetermined width in the longitudinal direction of the processing material on the outside (two places), and separate from other parts of the processing material after resin sealing it can.
  • the metal substrate device for an IC card module of the present invention can be manufactured by performing a plate making process and an etching process on a reel toe reel.
  • IC card modules can be mass-produced with a metal substrate device for modules.
  • the IC chip has a die pad larger in size than the IC chip, and the IC chip mounting area of the die pad is formed to be thinner than the base material thickness of the metal substrate by half etching. I have. This makes it possible to meet the demand for thinner IC modules.
  • a strip-shaped thin processing material made of a metal a Cu material or a 42 alloy (42% Ni-Fe alloy) is usually used because of its conductivity, processability, versatility, and the like. These are not limited.
  • the thickness of the band-shaped thin processing material made of metal may be any thickness as long as it can respond to the demand for thinning of IC modules. Is preferred.
  • a concave portion for improving the adhesion of the sealing resin is provided outside the die pad region.
  • a sealing resin supporting portion integrally connected to the antenna terminal can be provided, and the resin sealing can be performed with good reliability.
  • an IC card module of the present invention having such a configuration, an IC module for a non-contact type IC card can be manufactured with high productivity.
  • a force S using a Cu material or 42-metal (42% Ni-Fe alloy) is used because of its conductivity, processability, versatility, and the like. These are not limited.
  • FIG. 1 A first embodiment of a metal substrate member for an IC card module according to the present invention.
  • FIG. 2 is a view showing a part of the example of FIG. 1 and a metal substrate of a unit.
  • FIG. 2 The IC chip is mounted on the die pad of the metal substrate of each unit of the metal substrate member for the IC card module shown in Fig. 1 (a), and wire bonding is connected. The figure which showed the straight part.
  • FIG. 3 is a view showing the members shown in FIG. 2 (a) subjected to transfer molding treatment.
  • FIG. 4 is a view showing a metal substrate member for an IC card module according to an embodiment of the present invention.
  • FIG. 2 is a schematic configuration diagram showing a part of the example of FIG.
  • FIG. 5 A diagram in which an IC chip is mounted on a die pad of a metal substrate of each unit of the metal substrate member for the IC card module shown in FIG. 4, and wire bonding connection is performed.
  • FIG. 6 is a view showing the members shown in FIG. 5 subjected to transfer molding processing.
  • FIG. 7 is a diagram for explaining a conventional method of manufacturing a metal substrate and an IC module.
  • FIG. 8 is a diagram for explaining an IC module and its circuit configuration in a non-contact type IC card.
  • FIG. 9 is a view for explaining the relationship between a metal substrate processing method and resin leakage.
  • FIG. 1A is a schematic configuration diagram showing a part of a first example of an embodiment of a metal substrate device for an IC card module according to the present invention
  • FIG. Fig. 2 (a) shows the metal base material of the unit in ()
  • Fig. 2 (a) shows the IC chip mounted on the die pad of the metal base material of each unit of the metal base device for the IC card module shown in Fig. 1 (a).
  • Figure 2 (b) shows the unit metal base material in Figure 2 (a)
  • Figure 3 (b) shows the metal base unit shown in Figure 2 (a) with transfer mold processing
  • FIG. 4 is a schematic configuration diagram showing a part of a second embodiment of the metal substrate device for an IC card module of the present invention
  • FIG. 5 is a metal substrate for the IC card module shown in FIG. Figure 6 shows the IC chip mounted on the die pad of the metal substrate of each unit of the material equipment and wire bonding connection.
  • Tal base material FIG. 3 is a view in which transfer molding processing has been performed on the apparatus.
  • 111 is a material for caroe
  • 120 is a metal base material
  • 121 is a die pad
  • 121H is a half-etched portion
  • 122A and 122B are terminals (connected to an antenna)
  • 123B is the inner B terminal
  • 124 is through?
  • 125 penetrates?
  • Distinction ⁇ 126 is a connection
  • 128 is a sprocket
  • 130 is an IC chip
  • 131 is a terminal
  • 135 is a bonding wire
  • 140 is a sealing tree S, 221 f, and ino.
  • ⁇ ⁇ 222A, 222B, 222C, 222D is a terminal (to be connected to the antenna), 223A, 223B, 223C, 223D is an internal element, 225 is through? ⁇ 226 is a splice, 228 is a sprocket, 230 is an IC chip, 231 is a terminal, 235 is a bonding wire, and 240 is a sealing resin.
  • FIGS. 1 (a) and 1 (b) and FIGS. 2 (a) and 2 (b) show a first example of an embodiment of a metal substrate device (metal substrate member) for an IC card module of the present invention. It will be described based on.
  • the metal substrate device (metal substrate member) for an IC card module of the first example is an IC card module for a transfer mold type non-contact type IC card, in which an antenna is arranged in one loop. It has a large number of metal substrates (metal substrates) 120 used for IC modules (see Fig. 1 (b)).
  • This metal substrate member is formed by etching a strip-shaped thin processing material 111 made of a conductive metal, and the respective portions of the metal substrate 120 as a unit are held together by a connecting portion 126.
  • the metal substrate device has a large number of metal substrate devices (metal substrate) 120 formed by etching a processing material 111 extending in the longitudinal direction. And extends between the pair of reels 100A and 100B.
  • the metal substrate 120 is formed on the processing material 111 in four rows in the width direction and continuously in the longitudinal direction.
  • Each metal substrate 120 has a die pad 121 for mounting an IC chip, and a resin sealing region 140A including the die pad 121, and is located outside the die pad 121 and the resin sealing region 140A, and extends in the longitudinal direction.
  • a pair of antenna terminals 122A and 122B protrude on both sides along the direction.
  • the pair of antenna terminals 122A and 122B are arranged diagonally to the resin sealing area 140A.
  • the antenna terminal 122A of one metal substrate 120 and this metal substrate 120 is shifted in the width direction of the processing material 111, and enters the common area 111A.
  • the metal substrate 120 of each unit is connected to another portion 111B of the processing material 111 by a connecting portion (connecting portion) 126 provided on two connecting lines Ll and L2 along the longitudinal direction. (Fig. 1 (b)), and after sealing with resin, simply cut a predetermined width in the longitudinal direction of the processing material 111 along the connecting lines Ll, L2 in Fig. 1 (b), 120 is separated from the other part 111B of the processing material 111 and has a desired outer shape.
  • the die pad 121 of the metal substrate 120 and the antenna terminals 122A and 122B there are provided internal terminals 123A and 123B which are respectively connected to the antenna terminals 122A and 122B.
  • the internal terminals 123A and 123B are located within the resin sealing region 140A, and the internal terminals 123A and 123B are provided with through holes 124 for improving the adhesion to the resin.
  • the through-hole 124 has a force functioning as a concave portion. The concave portion does not have to penetrate.
  • the processing material 111 a Cu material or a 42 alloy (42% Ni-Fe alloy) is generally used, but the power is not limited to these because of its conductivity, processability, processability, and versatility.
  • the thickness of the band-shaped thin processing material made of metal may be any thickness as long as it can meet the demand for thinner IC modules.
  • the metal substrate 120 has a die pad 121 larger than the IC chip 130 for mounting the IC chip with the terminal surface facing upward.
  • the IC chip mounting area 130A is formed thinner than the thickness of the processing material 111 by half etching.
  • the thickness can be further reduced than in the first example.
  • FIG. 4 shows a second example of the embodiment of the metal substrate device for an IC card module of the present invention.
  • the second example is a metal substrate device (metal substrate member) which is an IC card module for a transfer mold type non-contact type IC card, in which an antenna coil is arranged in two loops. It has a large number of metal substrates (metal substrates) 220 used.
  • This metal substrate member is a strip-shaped thin member made of conductive metal. The processing material 211 is etched, and each part of the unit metal substrate 220 is held together by a connecting part 226.
  • each metal substrate 220 has a die pad 221 larger in size than the IC chip 230 because the IC chip 230 is mounted with the terminal surface facing upward.
  • the mounting area 221H is formed to be thinner than the thickness of the processing material 211 by half etching.
  • the thickness can be further reduced as compared with the first example.
  • FIG. 4 shows the metal substrate of a unit adjacent to the processing material 211 in the longitudinal direction.
  • the metal substrate 220 of each unit is composed of a dyno 221, antenna terminals 222 A, 222 B, 222 C, 222 D, internal terminals 223 A, 223 B, 223 C, 223 D, and It comprises a connecting portion 226 for connecting to another portion 211B of the processing material 211.
  • Substrate unit 220 adjacent to the processing material 211 in the longitudinal direction 220 Antenna terminal parts 222A, 222B, 222C, 222D force of the unit material Common area in the width direction of the material 211 for the caroe 211 Unit metal that overlaps in 11A Substrate 220 force Worked in the longitudinal direction of material 211 for processing.
  • the second example is for two loops of the antenna coil, two pairs of antenna terminals 222A, 222B, 222C, outside the die pad 221 and the sealing area 240, and on both sides along the longitudinal direction. 222D protrudes.
  • the through-hole (corresponding to 124 in FIG. 1) is not provided in the internal terminal as in the first example, but may be provided as appropriate.
  • the metal substrate 120 of each unit is connected to another portion 211B of the processing material 211 by a connecting portion 226 provided on two connecting lines L3 and L4 along the longitudinal direction, By cutting a predetermined width in the longitudinal direction of the processing material 211 along the connecting lines L3 and L4 after resin sealing, the metal substrate 220 is separated from the other portion 211B of the processing material 211, Have the desired profile.
  • the method for manufacturing the IC card module of the present example is based on the metal substrate of the first example shown in FIG. It is manufactured using a single member.
  • This example is a method of manufacturing a transfer mold type IC card module used for a non-contact type IC card.
  • a thin processing material 111 made of metal is subjected to a plate making process using a reel “to” reel. Then, an etching process is performed to form a metal substrate member of the first example shown in FIG. ( Figure 1)
  • the processing material 111 usually, a band-shaped Cu material having a thickness of about 0.1 mm or a 42-metal (42% Ni-Fe alloy) material is used. After forming the metal pattern, a predetermined etching solution is used, spray etching is performed from both sides, and the metal substrate member is formed by etching.
  • the etching is divided into two stages, the first etching is performed on the half-etching formation surface side, and then a predetermined filler is formed on the hole formed by the etching. It is good to adopt the method of performing the second etching from the opposite side in the state of being buried.
  • silver plating is performed on a predetermined area of the metal substrate 120 of each unit of the metal substrate member (FIG. 1 (a)) formed by etching, and the metal plating is performed.
  • the IC chip 130 is mounted on the IC chip mounting area 130A on the die pad 121 of the metal substrate 120 of each unit of the substrate member.
  • the entire surface of the metal substrate 120 may be subjected to palladium plating.
  • the resin sealing area 140A including the IC chip 130 and the bonding wires 135 is resin-sealed with the sealing resin 140 by a transfer method (FIG. 3).
  • the connecting portion 126 is cut along the connecting lines Ll and L2 in FIG. 1 (b) with a predetermined cutter, and the processing material 111 is singulated to obtain IC modules 150, respectively. .
  • the metal substrate member of the second example shown in FIG. 4 when the metal substrate member of the second example shown in FIG. 4 is used, similarly, the metal substrate member (FIG. A predetermined area of the metal substrate 220 of each unit is subjected to silver plating. Next, after mounting the IC chip 230 on the tie pad 221 of the metal substrate 220 of each unit of the metal substrate member, wire bonding connection is performed by the wire 235 (FIG. 5). Thereafter, the resin sealing area 240A including the IC chip 230 and the bonding wires 235 is sealed with the sealing resin 240 by the transfer method (FIG. 6).
  • the connecting portion 226 is cut along the connecting lines L3 and L4 in FIG. 4 by a predetermined cutter, and the processing material 111 is singulated to obtain the IC modules 250, respectively.
  • a metal substrate member used for an IC module for a non-contact type IC card can be manufactured with higher mass productivity. At the same time, it is possible to easily manufacture an IC module using such a metal substrate member.

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Abstract

A metal substrate member has multiple metal substrate units used for IC card modules for non-contact IC cards of transfer-mold type. The metal substrate member comprises a band-like metal thin base for machining, and the metal substrate units are held by connecting portions. Each metal substrate unit has a die pad where an IC chip is mounted. An antenna terminal for connection to an antenna coil is disposed outside the die pad and a resin-capsulated region. The antenna terminal portions of two metal substrate units adjacent to each other in the longitudinal direction of the metal thin base overlap with each other in a common region in the width direction. Each metal substrate unit is encapsulated with resin and separated by making a cut with a predetermined width in the longitudinal direction of the metal thin base in the two connection lines outside the metal substrate units.

Description

明 細 書  Specification
メタル基材装置及び ICカードモジュールの製造方法  Metal base device and method of manufacturing IC card module
技術分野  Technical field
[0001] 本発明は、非接触型の icカードに用いられるトランスファーモールドタイプの ic力 ードモジュール用のメタル基材装置と、該メタル基材装置を用いた非接触型の ic力 ードに用いられるトランスファーモールドタイプの icカードモジュールの製造方法に 関する。  The present invention is used for a metal base device for a transfer mold type ic card module used for a non-contact type ic card and a non-contact ic card using the metal base device. The present invention relates to a method of manufacturing a transfer mold type ic card module.
^景技術  ^ Scenic technology
[0002] 情報の機密性の面から ICカードが次第に普及されつつある。近年では、読み書き 装置 (リーダライタ）と接触せずに情報の授受を行う非接触型の ICカードが提案され、 中でも、外部の読み書き装置との信号交換を、あるいは信号交換と電力供給とを電 磁波により行う方式のものが実用化されている。  [0002] From the aspect of confidentiality of information, IC cards are gradually becoming popular. In recent years, non-contact type IC cards that exchange information without contacting a read / write device (reader / writer) have been proposed. Above all, signal exchange with an external read / write device, or signal exchange and power supply, has been proposed. A system using a magnetic wave has been put to practical use.
[0003] このような非接触式の ICカードは、例えば、図 8 (a)に示すように、 ICモジュール 81 2を有し、この ICモジュール 812は、アンテナ 811に接続されており、その回路構成 は、通常、図 8 (b)のようになっている。  [0003] Such a non-contact type IC card has, for example, as shown in FIG. 8 (a), an IC module 812, and this IC module 812 is connected to an antenna 811 and its circuit The configuration is usually as shown in Fig. 8 (b).
[0004] 図 8 (a) (b)において、 810は ICカード、 811はアンテナ、 812は ICモジュール、 81 3は（ICモジュールの）端子である。  In FIGS. 8A and 8B, 810 is an IC card, 811 is an antenna, 812 is an IC module, and 813 is a terminal (of the IC module).
[0005] このような ICモジュールにおける ICチップの実装方法としては、プリント基板に ICチ ップをマウントし、ボンディング線にてプリント基板上へ接続する COB (Chip On B oard)が最も多く用いられている。し力 ながらこの方法では実装厚を薄くできないと レ、う欠点がある。最近では、実装厚を薄くでき、量産にも対応できる実装形態として、 導電性のダイパッドをハーフエッチングしたメタル基材（メタルサブストレート）上に IC チップをマウントし、ボンディングワイヤにてメタルサブストレートの端子部へ接続する 形態が提案されている。  [0005] As an IC chip mounting method in such an IC module, a COB (Chip On Board) in which an IC chip is mounted on a printed circuit board and connected to the printed circuit board by a bonding wire is most often used. ing. However, this method has the disadvantage that the mounting thickness cannot be reduced by this method. Recently, as a mounting form that can reduce the mounting thickness and support mass production, an IC chip is mounted on a metal substrate (metal substrate) with a conductive die pad half-etched, and the metal substrate is mounted with bonding wires. A form of connection to the terminal has been proposed.
[0006] このような形態の ICモジュールにおいては、単位のメタルサブストレートは、加工用 素材をカ卩ェしてなり、 ICチップを搭載するための領域 (ダイパッド部）と、アンテナ回 路との接続用の領域と、入出力端子の領域とを有し、これら複数の領域が一部繋が つた状態で分割形成されている。 ICモジュールを作製する際、これらの領城は繋ぎ 部で加工用素材に接続され、加工用素材は単位のメタルサブストレートが多面付け されている。各単位のメタルサブストレートに ICチップを搭載して樹脂封止した後に、 所定の繋ぎ部が切断分離される。 [0006] In such an IC module, the metal substrate of the unit is formed by processing a material for processing, and a region for mounting an IC chip (die pad portion) and an antenna circuit are formed. It has a connection area and an input / output terminal area, and these areas are partially connected. It is divided and formed in a connected state. When manufacturing IC modules, these territories are connected to the processing material at the joints, and the processing material is multi-faced with a unit metal substrate. After mounting the IC chip on the metal substrate of each unit and sealing it with resin, predetermined joints are cut and separated.
[0007] 単位のメタルサブストレートをリードあるいはリードフレームと言う場合がある。また、 単位のメタルサブストレートが多面付けされ、加工用素材に直接、あるいは枠部を設 けて枠部に、繋ぎ部で繋がった状態のものを、リードフレームと言う場合もある。  [0007] A unit metal substrate may be referred to as a lead or a lead frame. In addition, a unit in which a unit of metal substrate is multi-faced and connected directly to a material for processing or by connecting a frame portion to a frame portion by a connecting portion may be referred to as a lead frame.
[0008] このような、メタルサブストレートをプレスにて作製すると、プレス加工時にバリ 911が 発生し、図 9 (a)に示すように、樹脂封止した場合、裏面への樹脂漏れ 931が発生し てしまうため、エッチングカ卩ェ方法が採られる。エッチングカ卩ェ方法による場合には、 図 9 (b)に示すように、樹脂漏れを起こさずに封止ができる。  [0008] When such a metal substrate is manufactured by pressing, burrs 911 are generated at the time of pressing, and as shown in Fig. 9 (a), when resin sealing is performed, resin leakage 931 to the back surface occurs. Therefore, the etching method is adopted. In the case of using the etching method, as shown in FIG. 9B, sealing can be performed without causing resin leakage.
[0009] 尚、図 9 (a) (b)において、 910はメタルサブストレート、 920は ICチップ、 930は封 止用樹脂、 931は樹脂漏れ、 940はボンディングワイヤである。  In FIGS. 9A and 9B, reference numeral 910 denotes a metal substrate, 920 denotes an IC chip, 930 denotes a sealing resin, 931 denotes a resin leak, and 940 denotes a bonding wire.
[0010] エッチングカ卩ェ方法においては、加工用素材として、薄い Cu材、あるいは 42合金（  [0010] In the etching method, a thin Cu material or 42 alloy (
42%Ni— Fe合金）が用いられ、また通常、製版処理、エッチング処理がリール'トゥー •リールで行なわれる（リール方式)。  42% Ni-Fe alloy), and plate making and etching are usually performed on reel-to-reel (reel type).
[0011] そして、加工用素材をエッチング加工してメタルサブストレートを面付けした後、面 付け状態のまま、順に、銀メツキ処理あるいは全面パラジュームめっき処理、 ICチッ プマウント、ワイヤボンディング、個別樹脂封止等の処理が連続して、あるいは、分け て、リール方式で行なわれる。 [0011] Then, after the material for processing is etched and the metal substrate is imposed, silver plating or overall palladium plating, IC chip mounting, wire bonding, individual resin encapsulation are performed in this order in the imposed state. Are performed continuously or separately in a reel system.
[0012] そして、従来、加工用素材をエッチングカ卩ェすることにより、 ICモジュール用のメタ ルサブストレートを面付けしてリール方式で作製する場合、図 7 (a)に示すように、 1面 毎に、その絵柄がオーバラップしないように配歹して作製していた。  [0012] Conventionally, when a metal substrate for an IC module is imposed by fabricating a processing material by etching, a reel method is used, as shown in FIG. 7 (a). Each face was made so that the patterns did not overlap.
[0013] 尚、図 7 (b)は、図 7 (a)のように面付けされてエッチングされた、メタルサブストレー ト部材の各ダイパッド部 621に ICチップを搭載し、更にトランスファー方式で樹脂封 止した状態を示している。  [0013] Fig. 7 (b) shows an IC chip mounted on each die pad portion 621 of the metal substrate member, which is imposed and etched as shown in Fig. 7 (a), and is further provided with a resin by a transfer method. Shows the sealed state.
[0014] その後、所定の位置をカットすることにより、個片化された ICカードモジュールが得 られる。 [0015] 図 7 (a) (b)において、 611は加工用素材、 620は単位のメタルサブストレート、 621 はダイパッド、 621Hはハーフエッチング部、 622A、 622Bは（アンテナと接続する） 端子、 625は貫通孔部、 626は繋ぎ部、 628はスプロケット、 640は封止用樹脂であ る。 [0014] Thereafter, by cutting a predetermined position, an individualized IC card module is obtained. [0015] In Figs. 7 (a) and (b), 611 is a processing material, 620 is a metal substrate of a unit, 621 is a die pad, 621H is a half-etched portion, 622A and 622B are terminals (to be connected to an antenna), and 625. Is a through hole, 626 is a connecting portion, 628 is a sprocket, and 640 is a sealing resin.
[0016] ここで従来のメタルサブストレートの作製方法として、特開 2000—174176号公報 に示すものを挙げることができる。  Here, as a conventional method for manufacturing a metal substrate, a method described in JP-A-2000-174176 can be mentioned.
[0017] 上記のように、最近、 ICモジエール用にメタルサブストレートを用いる形態が提案さ れ、エッチング加工により、 ICモジュール用のメタルサブストレートを面付けして、リー ル方式で作製する作製方法が知られている。この場合、特に、非接触型の ICカード 用の ICモジュールにおいては、更なる、量産化、低コストィ匕が求められている。  As described above, recently, a form in which a metal substrate is used for an IC module has been proposed, and a manufacturing method in which a metal substrate for an IC module is imposed by etching and manufactured by a reel method. It has been known. In this case, especially for IC modules for non-contact type IC cards, further mass production and lower cost are required.
発明の開示  Disclosure of the invention
[0018] 本発明は、このような点を考慮してなされたものであり、非接触型の ICカード用の IC モジュールを、更に量産性良く製造できるメタル基材装置および ICカードモジュール の製造方法を提供することを目的とする。  The present invention has been made in view of the above points, and a metal base device and a method of manufacturing an IC card module capable of manufacturing an IC module for a non-contact type IC card with higher productivity. The purpose is to provide.
[0019] 本発明は、非接触 ICカードモジュール用の多数のメタル基材を有するメタル基材 装置において、長手方向に延びる帯状の加工用素材をエッチングすることにより長 手方向に連続して形成された多数のメタル基材を備え、各メタル基材は ICチップ搭 載用のダイパッドと、ダイパッドを含む樹脂封止領域と、ダイパッドおよび樹脂封止領 域の外側であって長手方向に沿う両側に各々突設された少なくとも一対のアンテナ 端子とを有し、一のメタル基材のアンテナ端子と、このメタル基材の長手方向に隣接 するメタル基材のアンテナ端子は、加工用素材の幅方向の共通の領域内に入ってい ることを特徴とするメタル基材装置である。  [0019] The present invention provides a metal substrate device having a large number of metal substrates for a non-contact IC card module, which is formed continuously in the longitudinal direction by etching a strip-shaped processing material extending in the longitudinal direction. Each metal substrate has a die pad for mounting the IC chip, a resin sealing area including the die pad, and both sides along the longitudinal direction outside the die pad and the resin sealing area. Each has at least a pair of antenna terminals protruding, and the antenna terminal of one metal base and the antenna terminal of the metal base adjacent to the metal base in the longitudinal direction are arranged in the width direction of the processing material. This is a metal substrate device that is characterized by being in a common area.
[0020] 本発明は、各メタル基材は、長手方向に沿う 2本の連結線に設けられた連結部によ り加工用素材に連結され、この 2本の連結線に沿ってカットすることにより各メタル基 材は加工用素材の他の部分から分離されることを特徴とするメタル基材装置である。  [0020] According to the present invention, each metal base material is connected to the material for processing by a connecting portion provided on two connecting lines extending in the longitudinal direction, and cut along the two connecting lines. Thus, each metal substrate is separated from the other part of the material for processing by the metal substrate apparatus.
[0021] 本発明は、各メタル基材は、ダイパッドおよび樹脂封止領域の外側であって、長手 方向に沿う両側に各々突出された二対のアンテナ端子を有することを特徴とするメタ ル基材装置である。 [0022] 本発明は、各メタル基材のダイパッドは、 ICチップより大形状となっており、かつダイ パッドの ICチップ搭載領域は力卩ェ用素材をハーフエッチングすることにより加工用素 材の厚みより薄く形成されていることを特徴とするメタル基材装置である。 The present invention is characterized in that each metal base has two pairs of antenna terminals protruding on both sides along the longitudinal direction outside the die pad and the resin sealing region. Material device. According to the present invention, the die pad of each metal base material has a larger shape than the IC chip, and the IC chip mounting area of the die pad is formed by half-etching the material for processing by applying a half-etching method to the material for processing. It is a metal base device characterized by being formed thinner than the thickness.
[0023] 本発明は、各メタル基材の樹脂封止領域に、樹脂との密着性を向上させるための 凹部を設けたことを特徴とするメタル基材装置である。  [0023] The present invention is a metal substrate device, wherein a concave portion for improving adhesion to a resin is provided in a resin sealing region of each metal substrate.
[0024] 本発明は、各メタル基材は、ダイパッドとアンテナ端子との間に設けられた内部端 子を有することを特徴とするメタル基材装置である。  [0024] The present invention is the metal base device, wherein each metal base has an internal terminal provided between the die pad and the antenna terminal.
[0025] 本発明は、加工用素材は Au材あるいは 42合金からなることを特徴とするメタル基 材装置である。  [0025] The present invention is the metal base device, wherein the processing material is made of an Au material or a 42 alloy.
[0026] 本発明は、非接触 ICカードモジュール用の多数のメタル基材を有するメタル基材 装置であって、長手方向に延びる帯状の加工用素材をエッチングすることにより長手 方向に連続して形成された多数のメタル基材を備え、各メタル基材は ICチップ搭載 用のダイパッドと、ダイパッドを含む樹脂封止領域と、ダイパッドおよび樹脂封止領域 の外側であって長手方向に沿う両側に各々突設された少なくとも一対のアンテナ端 子とを有し、一のメタル基材のアンテナ端子と、このメタル基材の長手方向に隣接す るメタル基材のアンテナ端子は、加工用素材の幅方向の共通の領域内に入っている ことを特徴とするメタル基材装置を準備する工程と、各メタル基材のダイパッド上に IC チップを搭載する工程と、 ICチップとメタル基材の所定部分とをワイヤを用いてワイヤ ボンディングにより接続する工程と、各メタル基材の樹脂封止領域に、 ICチップとワイ ャを覆って樹脂を設けて樹脂封止する工程と、 ICチップ毎に加工用素材をカットする 工程と、を備えたことを特徴とする ICカードモジュールの製造方法である。  The present invention is a metal substrate device having a large number of metal substrates for a non-contact IC card module, which is formed continuously in the longitudinal direction by etching a strip-shaped processing material extending in the longitudinal direction. Each of the metal bases has a die pad for mounting the IC chip, a resin sealing area including the die pad, and both sides along the longitudinal direction outside the die pad and the resin sealing area. It has at least a pair of projecting antenna terminals, and the antenna terminal of one metal base and the antenna terminal of the metal base adjacent in the longitudinal direction of the metal base are arranged in the width direction of the processing material. Preparing a metal substrate device characterized by being in a common area of the above, mounting an IC chip on a die pad of each metal substrate, and a predetermined portion of the IC chip and the metal substrate. Connecting wires to each other by wire bonding, providing resin in the resin sealing area of each metal base to cover the IC chip and wires, and sealing the resin. And a method of manufacturing an IC card module.
[0027] 本発明は、加工用素材は Au材あるいは 42合金からなることを特徴とするメタル基 材装置である。  [0027] The present invention is the metal base device, wherein the working material is made of Au material or 42 alloy.
[0028] 本発明の ICカードモジュール用のメタル基材装置は、このような構成にすることによ り、非接触型の ICカード用の ICモジュールを、更に量産性良く製造できる。  [0028] With the metal substrate device for an IC card module of the present invention having such a configuration, an IC module for a non-contact type IC card can be manufactured with higher mass productivity.
[0029] 具体的には、単位のメタル基材は、 ICチップを搭載するためのダイパッドを有し、ァ ンテナコイルと接続するためのアンテナ端子がダイパッドおよび樹脂封止領域よりも 外側に、アンテナコイル 1ループ用として 2個あるいはアンテナコイル 2ループ用とし て 4個を設けられている。帯状の加工用素材の長手方向に隣接する単位のメタル基 材同志のアンテナ端子領域が幅方向の共通領域としてオーバラップするよう、単位 のメタル基材が加工用素材の長手方向に面付けされている。各単位のメタル基材は 樹脂封止した後に、その外側（2箇所）において加工用素材の長手方向に所定幅の カットを入れるだけで、樹脂封止した後に加工用素材の他の部分から分離できる。 Specifically, the metal base unit has a die pad for mounting an IC chip, and an antenna terminal for connecting to an antenna coil is located outside the die pad and the resin sealing region. Two or one antenna coil for two loops There are four. The metal base of the unit is placed in the longitudinal direction of the processing material so that the antenna terminal areas of the metal bases adjacent to each other in the longitudinal direction of the strip-shaped processing material overlap as a common area in the width direction. I have. After the metal base of each unit is sealed with resin, just cut a predetermined width in the longitudinal direction of the processing material on the outside (two places), and separate from other parts of the processing material after resin sealing it can.
[0030] 詳しくは、本発明の ICカードモジュール用のメタル基材装置を、リール'トウ一.リー ルで、製版処理、エッチング処理を行い作製することを可能とし、更に、本発明の IC カードモジュール用のメタル基材装置を用いて、 ICカードモジュールを、量産性良くMore specifically, the metal substrate device for an IC card module of the present invention can be manufactured by performing a plate making process and an etching process on a reel toe reel. IC card modules can be mass-produced with a metal substrate device for modules.
、リール'トゥー 'リールで各種の処理を行うことを可能としてレ、る。 It is possible to perform various processes on the reel 'to' reel.
[0031] また、 ICチップを搭載するため、 ICチップより大サイズのダイパッドを有し、該ダイパ ッドの ICチップ搭載領域はハーフエッチングにより、メタルサブストレートの基材厚より も薄く形成されている。このことにより、特に、 ICモジュールを薄型化要求に対応でき る。  Further, in order to mount an IC chip, the IC chip has a die pad larger in size than the IC chip, and the IC chip mounting area of the die pad is formed to be thinner than the base material thickness of the metal substrate by half etching. I have. This makes it possible to meet the demand for thinner IC modules.
[0032] また、金属からなる帯状の薄い加工用素材としては、導電性、処理性、汎用性等か ら、通常は、 Cu材あるいは 42合金（42%Ni— Fe合金）が用いられるが、これらに限 定はされない。  [0032] In addition, as a strip-shaped thin processing material made of a metal, a Cu material or a 42 alloy (42% Ni-Fe alloy) is usually used because of its conductivity, processability, versatility, and the like. These are not limited.
[0033] 尚、金属からなる帯状の薄い加工用素材の厚さは、 ICモジュールの薄化要求に対 応できる厚さであれば良ぐ 0. 1mm厚程度の薄いもの力 特に、薄化要求からは、 好ましい。  [0033] The thickness of the band-shaped thin processing material made of metal may be any thickness as long as it can respond to the demand for thinning of IC modules. Is preferred.
[0034] また、ダイパッド領域の外側に、封止樹脂の密着性を向上させるための凹部を設け [0034] Further, a concave portion for improving the adhesion of the sealing resin is provided outside the die pad region.
、前記アンテナ端子と一体的に接続する封止用樹脂支持部を設けることができ、樹 脂封止を信頼性の良レ、ものとしている。 In addition, a sealing resin supporting portion integrally connected to the antenna terminal can be provided, and the resin sealing can be performed with good reliability.
[0035] 本発明の ICカードモジュールの作製方法は、このような構成にすることにより、非接 触型の ICカード用の ICモジュールを、量産性良く製造できる。 With the method for manufacturing an IC card module of the present invention having such a configuration, an IC module for a non-contact type IC card can be manufactured with high productivity.
[0036] 即ち、各処理をリール 'トゥー'リールで行うことにより、これを達成している。 That is, this is achieved by performing each processing on a reel “to” reel.
[0037] 金属からなる帯状の薄い加工用素材としては、導電性、処理性、汎用性等から、通 常は、 Cu材あるいは 42含金（42%Ni— Fe合金）が用いられる力 S、これらに限定はさ れない。 図面の簡単な説明 [0037] As a strip-shaped thin processing material made of a metal, usually, a force S using a Cu material or 42-metal (42% Ni-Fe alloy) is used because of its conductivity, processability, versatility, and the like. These are not limited. BRIEF DESCRIPTION OF THE FIGURES
[0038] [図 1]本発明の ICカードモジュール用のメタルサブストレート部材の実施の形態の第  [FIG. 1] A first embodiment of a metal substrate member for an IC card module according to the present invention.
1の例の一部および単位のメタルサブストレートを示した図。  FIG. 2 is a view showing a part of the example of FIG. 1 and a metal substrate of a unit.
[図 2]図 1 (a)に示す ICカードモジュール用のメタルサブストレート部材の各単位のメ タルサブストレートのダイパッド上に ICチップを搭載し、ワイヤボンディング結線した状 態、および単位のメタルサブストレート部を示した図。  [Fig. 2] The IC chip is mounted on the die pad of the metal substrate of each unit of the metal substrate member for the IC card module shown in Fig. 1 (a), and wire bonding is connected. The figure which showed the straight part.
[図 3]図 2 (a)に示す部材にトランスファモールド処理を施した図。  FIG. 3 is a view showing the members shown in FIG. 2 (a) subjected to transfer molding treatment.
[図 4]本発明の ICカードモジュール用のメタルサブストレート部材の実施の形態の第 FIG. 4 is a view showing a metal substrate member for an IC card module according to an embodiment of the present invention.
2の例の一部を示した概略構成図。 FIG. 2 is a schematic configuration diagram showing a part of the example of FIG.
[図 5]図 4に示す ICカードモジュール用のメタルサブストレート部材の各単位のメタル サブストレートのダイパッド上に ICチップを搭載し、ワイヤボンディング結線した図。  [FIG. 5] A diagram in which an IC chip is mounted on a die pad of a metal substrate of each unit of the metal substrate member for the IC card module shown in FIG. 4, and wire bonding connection is performed.
[図 6]図 5に示す部材にトランスファモールド処理を施した図。  FIG. 6 is a view showing the members shown in FIG. 5 subjected to transfer molding processing.
[図 7]従来のメタルサブストレートと ICモジュールの作製方法を説明するための図。  FIG. 7 is a diagram for explaining a conventional method of manufacturing a metal substrate and an IC module.
[図 8]非接触式の ICカードにおける ICモジュールとその回路構成を説明するための 図。  FIG. 8 is a diagram for explaining an IC module and its circuit configuration in a non-contact type IC card.
[図 9]メタルサブストレートの加工方法と樹脂漏れとの関係を説明するための図。 発明を実施するための最良の形態  FIG. 9 is a view for explaining the relationship between a metal substrate processing method and resin leakage. BEST MODE FOR CARRYING OUT THE INVENTION
[0039] 本発明の ICカードモジュール用のメタル基材装置の実施の形態を図に基づいて説 明する。 An embodiment of a metal substrate device for an IC card module according to the present invention will be described with reference to the drawings.
[0040] 図 1 (a)は本発明の ICカードモジュール用のメタル基材装置の実施の形態の第 1の 例の一部を示した概略構成図、図 1 (b)は図 1 (a)における単位のメタル基材を示し た図、図 2 (a)は図 1 (a)に示す ICカードモジュール用のメタル基材装置の各単位の メタル基材のダイパッド上に ICチップを搭載し、ワイヤボンディング結線した図、図 2 ( b)は図 2 (a)における単位のメタル基材を示した図、図 3は図 2 (a)に示すメタル基材 装置にトランスファモールド処理を施した図、図 4は本発明の ICカードモジュール用 のメタル基材装置の実施の形態の第 2の例の一部を示した概略構成図、図 5は図 4 に示す ICカードモジュール用のメタル基材装置の各単位のメタル基材のダイパッド 上に ICチップを搭載し、ワイヤボンディング結線した図、図 6は図 5に示すメタル基材 装置にトランスファモールド処理を施した図である。 FIG. 1A is a schematic configuration diagram showing a part of a first example of an embodiment of a metal substrate device for an IC card module according to the present invention, and FIG. Fig. 2 (a) shows the metal base material of the unit in (), and Fig. 2 (a) shows the IC chip mounted on the die pad of the metal base material of each unit of the metal base device for the IC card module shown in Fig. 1 (a). Figure 2 (b) shows the unit metal base material in Figure 2 (a), Figure 3 (b) shows the metal base unit shown in Figure 2 (a) with transfer mold processing FIG. 4 is a schematic configuration diagram showing a part of a second embodiment of the metal substrate device for an IC card module of the present invention, and FIG. 5 is a metal substrate for the IC card module shown in FIG. Figure 6 shows the IC chip mounted on the die pad of the metal substrate of each unit of the material equipment and wire bonding connection. Tal base material FIG. 3 is a view in which transfer molding processing has been performed on the apparatus.
[0041] 図 1一図 6において、 111はカロェ用素材、 120は単位のメタル基材、 121はダイパ ッド、 121Hはハーフエッチング部、 122A、 122Bは（アンテナと接続する）端子、 12 3A、 123Bは内咅 B端子、 124は貫通？し、 125は貫通？しき ^ 126は繋ぎ咅、 128はス プロケット、 130は ICチップ、 131は端子、 135はボンディングワイヤ、 140は封止用 樹 S旨、 221 fまタ、、イノヽ。ッド、 221Hfまノヽーフェッチンク、、咅 ^ 222A, 222B, 222C, 222 Dは（アンテナと接続する）端子、 223A, 223B、 223C、 223Dは内咅 耑子、 225は 貫通？しき ^ 226は繋ぎ咅、 228はスプロケット、 230は ICチップ、 231は端子、 235は ボンディングワイヤ、 240は封止用樹脂である。  In FIG. 1 and FIG. 6, 111 is a material for caroe, 120 is a metal base material, 121 is a die pad, 121H is a half-etched portion, 122A and 122B are terminals (connected to an antenna), and 123A. , 123B is the inner B terminal, 124 is through? And 125 penetrates? Distinction ^ 126 is a connection, 128 is a sprocket, 130 is an IC chip, 131 is a terminal, 135 is a bonding wire, 140 is a sealing tree S, 221 f, and ino. , 221Hf or no fetch, 咅 ^ 222A, 222B, 222C, 222D is a terminal (to be connected to the antenna), 223A, 223B, 223C, 223D is an internal element, 225 is through?き 226 is a splice, 228 is a sprocket, 230 is an IC chip, 231 is a terminal, 235 is a bonding wire, and 240 is a sealing resin.
[0042] 本発明の ICカードモジュール用のメタル基材装置（メタルサブストレート部材）の実 施の形態の第 1の例を、図 1 (a) (b)および図 2 (a) (b)に基づいて説明する。  FIGS. 1 (a) and 1 (b) and FIGS. 2 (a) and 2 (b) show a first example of an embodiment of a metal substrate device (metal substrate member) for an IC card module of the present invention. It will be described based on.
[0043] 第 1の例の ICカードモジュール用のメタル基材装置（メタルサブストレート部材）は、 トランスファモールドタイプの非接触型 ICカード用の ICカードモジュールであって、ァ ンテナを 1ループで配する ICモジュールに用いられる多数の単位のメタル基材（メタ ルサブストレート） 120 (図 1 (b)参照）を有している。このメタルサブストレート部材は 導電性の金属からなる帯状の薄い加工用素材 111をエッチングしてなり、単位のメタ ルサブストレート 120の各部は繋ぎ部 126で互いに保持されている。  The metal substrate device (metal substrate member) for an IC card module of the first example is an IC card module for a transfer mold type non-contact type IC card, in which an antenna is arranged in one loop. It has a large number of metal substrates (metal substrates) 120 used for IC modules (see Fig. 1 (b)). This metal substrate member is formed by etching a strip-shaped thin processing material 111 made of a conductive metal, and the respective portions of the metal substrate 120 as a unit are held together by a connecting portion 126.
[0044] すなわち、メタル基材装置 (メタルサブストレート部材）は、長手方向に延びる加工 用素材 111をエッチングすることにより加工形成された多数の単位のメタル基材装置 (メタルサブストレート） 120を有し、一対のリール 100A, 100B間に延びている。 メタルサブストレート 120は加工用素材 111に、幅方向に 4列にかつ長手方向に連続 して形成されている。  That is, the metal substrate device (metal substrate member) has a large number of metal substrate devices (metal substrate) 120 formed by etching a processing material 111 extending in the longitudinal direction. And extends between the pair of reels 100A and 100B. The metal substrate 120 is formed on the processing material 111 in four rows in the width direction and continuously in the longitudinal direction.
[0045] 各メタルサブストレート 120は ICチップ搭載用のダイパッド 121と、ダイパッド 121を 含む樹脂封止領域 140Aとを有し、ダイパッド 121および樹脂封止領域 140Aの外 側であって、長手方向に沿う両側に一対のアンテナ端子 122A、 122Bが突設されて いる。一対のアンテナ端子 122A、 122Bは、樹脂封止領域 140Aの対角に配設され ている。  Each metal substrate 120 has a die pad 121 for mounting an IC chip, and a resin sealing region 140A including the die pad 121, and is located outside the die pad 121 and the resin sealing region 140A, and extends in the longitudinal direction. A pair of antenna terminals 122A and 122B protrude on both sides along the direction. The pair of antenna terminals 122A and 122B are arranged diagonally to the resin sealing area 140A.
[0046] また一のメタルサブストレート 120のアンテナ端子 122Aと、このメタルサブストレート 120の長手方向に隣接するメタルサブストレート 120のアンテナ端子 122Bは、加工 用素材 111の幅方向にぉレ、て共通の領域 111 A内に入ってレ、る。 [0046] Also, the antenna terminal 122A of one metal substrate 120 and this metal substrate 120 The antenna terminal 122B of the metal substrate 120 adjacent in the longitudinal direction of 120 is shifted in the width direction of the processing material 111, and enters the common area 111A.
[0047] そして、各単位のメタルサブストレート 120は、長手方向に沿う 2本の連結線 Ll、 L2 に設けられた繋ぎ部（連結部） 126により加工用素材 111の他の部分 111Bに連結さ れ（図 1 (b) )、樹脂封止した後、図 1 (b)の連結線 Ll、 L2に沿って、加工用素材 111 の長手方向に所定幅のカットを入れるだけで、メタルサブストレート 120は加工用素 材 111の他の部分 111Bから分離され、所望の外形を有する。  [0047] The metal substrate 120 of each unit is connected to another portion 111B of the processing material 111 by a connecting portion (connecting portion) 126 provided on two connecting lines Ll and L2 along the longitudinal direction. (Fig. 1 (b)), and after sealing with resin, simply cut a predetermined width in the longitudinal direction of the processing material 111 along the connecting lines Ll, L2 in Fig. 1 (b), 120 is separated from the other part 111B of the processing material 111 and has a desired outer shape.
[0048] 本例では、メタルサブストレート 120のダイパッド 121とアンテナ端子 122A、 122B との間に、アンテナ端子 122A、 122Bとそれぞれ一体的に接続する内部端子 123A 、 123Bが設けられている。この内部端子 123A、 123Bは樹脂封止領域 140A内に あり、この内部端子 123A、 123Bに樹脂との密着性を向上させるための貫通孔 124 が設けられている。この貫通孔 124はに凹部として機能する力 凹部は貫通していな くてもよい。  In this example, between the die pad 121 of the metal substrate 120 and the antenna terminals 122A and 122B, there are provided internal terminals 123A and 123B which are respectively connected to the antenna terminals 122A and 122B. The internal terminals 123A and 123B are located within the resin sealing region 140A, and the internal terminals 123A and 123B are provided with through holes 124 for improving the adhesion to the resin. The through-hole 124 has a force functioning as a concave portion. The concave portion does not have to penetrate.
[0049] 加工用素材 111としては、通常は、 Cu材あるいは 42合金（42%Ni— Fe合金）が、 導電性や処理性、処理性、汎用性から用いられる力 これらに限定はされない。  [0049] As the processing material 111, a Cu material or a 42 alloy (42% Ni-Fe alloy) is generally used, but the power is not limited to these because of its conductivity, processability, processability, and versatility.
[0050] 金属からなる帯状の薄い加工用素材の厚さは、 ICモジュールの薄化要求に対応で きる厚さであれば良い。  [0050] The thickness of the band-shaped thin processing material made of metal may be any thickness as long as it can meet the demand for thinner IC modules.
[0051] 第 1の例の変形例としては、メタルサブストレート 120は端子面を上側にして ICチッ プを搭載するための、 ICチップ 130より大サイズのダイパッド 121を有し、該ダイパッ ド 121の ICチップ搭載領域 130Aはハーフエッチングにより加工用素材 111の厚み よりも薄く形成されている。  As a modification of the first example, the metal substrate 120 has a die pad 121 larger than the IC chip 130 for mounting the IC chip with the terminal surface facing upward. The IC chip mounting area 130A is formed thinner than the thickness of the processing material 111 by half etching.
この変形例の場合は、薄型化を第 1の例より一層可能とすることができる。  In the case of this modification, the thickness can be further reduced than in the first example.
[0052] 本発明の ICカードモジュール用のメタル基材装置の実施の形態の第 2の例を、図 4  FIG. 4 shows a second example of the embodiment of the metal substrate device for an IC card module of the present invention.
(a) (b)—図 6に基づいて、簡単に説明する。  (a) (b) —Brief description based on FIG.
[0053] 第 2の例は、メタル基材装置 (メタルサブストレート部材）はトランスファモールドタイ プの非接触型 ICカード用の ICカードモジュールであって、アンテナコイルを 2ループ で配する ICモジュールに用いられる多数の単位のメタル基材（メタルサブストレート） 220有している。このメタルサブストレート部材は、導電性の金属からなる帯状の薄い 加工用素材 211をエッチングしてなり、単位のメタルサブストレート 220の各部は繋ぎ 部 226で互いに保持されている。 [0053] The second example is a metal substrate device (metal substrate member) which is an IC card module for a transfer mold type non-contact type IC card, in which an antenna coil is arranged in two loops. It has a large number of metal substrates (metal substrates) 220 used. This metal substrate member is a strip-shaped thin member made of conductive metal. The processing material 211 is etched, and each part of the unit metal substrate 220 is held together by a connecting part 226.
[0054] 第 2の例においては、各メタルサブストレート 220は端子面を上側にして ICチップ 2 30を搭載するため、 ICチップ 230より大サイズのダイパッド 221を有し、該ダイパッド 221の ICチップ搭載領域 221Hはハーフエッチングにより加工用素材 211の厚みよ りも薄く形成されている。  In the second example, each metal substrate 220 has a die pad 221 larger in size than the IC chip 230 because the IC chip 230 is mounted with the terminal surface facing upward. The mounting area 221H is formed to be thinner than the thickness of the processing material 211 by half etching.
[0055] この第 2の例の場合も、薄型化を第 1の例より一層可能とすることができる。  [0055] Also in the case of the second example, the thickness can be further reduced as compared with the first example.
[0056] ここで、図 4は、加工用素材 211の長手方向に隣接する単位のメタルサブストレート  Here, FIG. 4 shows the metal substrate of a unit adjacent to the processing material 211 in the longitudinal direction.
2個の状態を拡大して示したものである。  It is an enlarged view of the two states.
[0057] 図 4において、各単位のメタルサブストレート 220は、ダイノくッド 221と、アンテナ端 子 222A、 222B, 222C, 222Dと、内き端子 223A、 223B、 223C, 223Dと、これ らを加工用素材 211の他の部分 211Bに連結するための繋ぎ部 226とからなってい る。加工用素材 211の長手方向に隣接する単位のサブストレート 220同志のアンテ ナ端子部 222A、 222B、 222C、 222D力 カロェ用素材 211の幅方向の共通領域 2 11A内でオーバラップするよう単位のメタルサブストレート 220力 加工用素材 211の 長手方向に面付けされてレ、る。  In FIG. 4, the metal substrate 220 of each unit is composed of a dyno 221, antenna terminals 222 A, 222 B, 222 C, 222 D, internal terminals 223 A, 223 B, 223 C, 223 D, and It comprises a connecting portion 226 for connecting to another portion 211B of the processing material 211. Substrate unit 220 adjacent to the processing material 211 in the longitudinal direction 220 Antenna terminal parts 222A, 222B, 222C, 222D force of the unit material Common area in the width direction of the material 211 for the caroe 211 Unit metal that overlaps in 11A Substrate 220 force Worked in the longitudinal direction of material 211 for processing.
[0058] 第 2の例は、アンテナコイル 2ループ用のもので、ダイパッド 221および封止領域 24 0の外側であって、長手方向に沿う両側に二対のアンテナ端子 222A、 222B、 222 C、 222Dが突設されている。  [0058] The second example is for two loops of the antenna coil, two pairs of antenna terminals 222A, 222B, 222C, outside the die pad 221 and the sealing area 240, and on both sides along the longitudinal direction. 222D protrudes.
[0059] 尚、第 2の例では、第 1の例のように、内部端子に貫通孔（図 1の 124に相当）が設 けていないが、適宜設けても良い。図 4に示すように、各単位のメタルサブストレート 1 20は長手方向に沿う 2本の連結線 L3、L4に設けられた繋ぎ部 226により加工用素 材 211の他の部分 211Bに連結され、樹脂封止した後に連結線 L3、 L4に沿って加 ェ用素材 211の長手方向に所定幅のカットを入れることにより、メタルサブストレート 2 20は加工用素材 211の他の部分 211Bから分離され、所望の外形を有する。  In the second example, the through-hole (corresponding to 124 in FIG. 1) is not provided in the internal terminal as in the first example, but may be provided as appropriate. As shown in FIG. 4, the metal substrate 120 of each unit is connected to another portion 211B of the processing material 211 by a connecting portion 226 provided on two connecting lines L3 and L4 along the longitudinal direction, By cutting a predetermined width in the longitudinal direction of the processing material 211 along the connecting lines L3 and L4 after resin sealing, the metal substrate 220 is separated from the other portion 211B of the processing material 211, Have the desired profile.
[0060] 次に、本発明の ICカードモジュールの製造方法の 1例を、図 1一図 3に基づいて簡 単に説明する。  Next, an example of the method for manufacturing an IC card module of the present invention will be briefly described with reference to FIGS.
[0061] 本例の ICカードモジュールの製造方法は、図 1に示す第 1の例のメタルサブストレ 一ト部材を用レ、て作製するものである。 [0061] The method for manufacturing the IC card module of the present example is based on the metal substrate of the first example shown in FIG. It is manufactured using a single member.
[0062] 本例は、非接触型の ICカードに用いられるトランスファモールドタイプの ICカードモ ジュールの製造方法で、金属からなる薄い加工用素材 111に対し、リール'トゥー'リ ールで、製版処理、エッチング処理を行レ、、図 1に示す第 1の例のメタルサブストレー ト部材を形成する。 （図 1)  This example is a method of manufacturing a transfer mold type IC card module used for a non-contact type IC card. In this method, a thin processing material 111 made of metal is subjected to a plate making process using a reel “to” reel. Then, an etching process is performed to form a metal substrate member of the first example shown in FIG. (Figure 1)
加工用素材 111としては、通常、厚さ 0. 1mm程度の帯状の Cu材あるいは 42含金 (42%Ni— Fe合金)材を用レ、、製版処理により、その両面に耐エッチング性のレジス トパターンを形成した後、所定のエッチング液を用レ、、両面からスプレーエッチングを 行レ、、メタルサブストレート部材をエッチング形成する。  As the processing material 111, usually, a band-shaped Cu material having a thickness of about 0.1 mm or a 42-metal (42% Ni-Fe alloy) material is used. After forming the metal pattern, a predetermined etching solution is used, spray etching is performed from both sides, and the metal substrate member is formed by etching.
[0063] 尚、ハーフエッチングをより精度良く行うために、エッチングを 2段に分け、ハーフエ ツチング形成面側に第 1のエッチングを行った後、所定の充填材をエッチング形成さ れた孔部に坦め込んだ状態で、反対側から第 2のエッチングを行う方法を採っても良 レ、。  In order to perform the half-etching with higher accuracy, the etching is divided into two stages, the first etching is performed on the half-etching formation surface side, and then a predetermined filler is formed on the hole formed by the etching. It is good to adopt the method of performing the second etching from the opposite side in the state of being buried.
[0064] 次いで、リール'トウ一.リールで、エッチング形成されたメタルサブストレート部材（ 図 1 (a) )の各単位のメタルサブストレート 120の所定の領城に銀メツキ処理を施し、メ タルサブストレート部材の各単位のメタルサブストレート 120のダイパッド 121上の IC チップ搭載領域 130Aに ICチップ 130を搭載する。メタルサブストレート 120の所定 の領域へ銀メツキ処理する代わりに、メタルサブストレート 120の全面にパラジューム めっきを施しても良い。  Next, on the reel “toe 1 reel”, silver plating is performed on a predetermined area of the metal substrate 120 of each unit of the metal substrate member (FIG. 1 (a)) formed by etching, and the metal plating is performed. The IC chip 130 is mounted on the IC chip mounting area 130A on the die pad 121 of the metal substrate 120 of each unit of the substrate member. Instead of performing silver plating on a predetermined area of the metal substrate 120, the entire surface of the metal substrate 120 may be subjected to palladium plating.
[0065] その後、 ICチップ 130の端子（図示していなレ、）と内部端子 123A、 123Bとをワイヤ [0065] Thereafter, the terminals (not shown) of the IC chip 130 and the internal terminals 123A and 123B are wired.
135によりワイヤボンディング接続する（図 2 (a) )。 Wire bonding connection is performed using 135 (Fig. 2 (a)).
[0066] 次いで、トランスファ方式により、 ICチップ 130、ボンディングワイヤ 135を含む樹脂 封止領域 140Aを封止用樹脂 140により樹脂封止する（図 3)。 Next, the resin sealing area 140A including the IC chip 130 and the bonding wires 135 is resin-sealed with the sealing resin 140 by a transfer method (FIG. 3).
[0067] その後、所定のカッターにて、図 1 (b)の連結線 Ll、 L2に沿って、繋ぎ部 126を切 断し、加工用素材 111を個片化し、それぞれ、 ICモジュール 150を得る。 Thereafter, the connecting portion 126 is cut along the connecting lines Ll and L2 in FIG. 1 (b) with a predetermined cutter, and the processing material 111 is singulated to obtain IC modules 150, respectively. .
[0068] 上記の方法において、図 4に示す第 2の例のメタルサブストレート部材を用いた場 合も、同様に、リール 'トゥー'リールで、エッチング形成されたメタルサブストレート部 材（図 4)の各単位のメタルサブストレート 220の所定の領域に銀メツキ処理を施す。 次にメタルサブストレート部材の各単位のメタルサブストレート 220のタイパッド 221上 に、 ICチップ 230を搭載した後、ワイヤ 235によりワイヤボンディング接続する（図 5) 。その後、トランスファ方式により、 ICチップ 230、ボンディングワイヤ 235を含む樹脂 封止領域 240Aを封止樹脂 240により樹脂封止する（図 6)。 In the above method, when the metal substrate member of the second example shown in FIG. 4 is used, similarly, the metal substrate member (FIG. A predetermined area of the metal substrate 220 of each unit is subjected to silver plating. Next, after mounting the IC chip 230 on the tie pad 221 of the metal substrate 220 of each unit of the metal substrate member, wire bonding connection is performed by the wire 235 (FIG. 5). Thereafter, the resin sealing area 240A including the IC chip 230 and the bonding wires 235 is sealed with the sealing resin 240 by the transfer method (FIG. 6).
[0069] そして、この後、所定のカッターにて、図 4の連結線 L3、 L4に沿って、繋ぎ部 226 を切断し、加工用素材 111を個片化し、それぞれ、 ICモジュール 250を得る。  Then, thereafter, the connecting portion 226 is cut along the connecting lines L3 and L4 in FIG. 4 by a predetermined cutter, and the processing material 111 is singulated to obtain the IC modules 250, respectively.
[0070] 本発明によれば、上記のように、非接触型の ICカード用の ICモジュールに用いら れるメタルサブストレート部材を、更に、量産性良く製造できる。同時に、そのような、 メタルサブストレート部材を用いた ICモジュールの製造を容易に行なうことができる。  [0070] According to the present invention, as described above, a metal substrate member used for an IC module for a non-contact type IC card can be manufactured with higher mass productivity. At the same time, it is possible to easily manufacture an IC module using such a metal substrate member.

Claims

請求の範囲 The scope of the claims
[1] 非接触 ICカードモジュール用の多数のメタル基材を有するメタル基材装置におい て、  [1] In a metal substrate device having a large number of metal substrates for a non-contact IC card module,
長手方向に延びる帯状の加工用素材をエッチングすることにより長手方向に連続し て形成された多数のメタル基材を備え、  Equipped with a number of metal bases formed continuously in the longitudinal direction by etching a strip-shaped processing material extending in the longitudinal direction,
各メタル基材は ICチップ搭載用のダイパッドと、ダイパッドを含む樹脂封止領域と、 ダイパッドおよび樹脂封止領域の外側であって長手方向に沿う両側に各々突設され た少なくとも一対のアンテナ端子とを有し、  Each metal substrate has a die pad for mounting an IC chip, a resin sealing area including the die pad, and at least one pair of antenna terminals protruding from both sides of the die pad and the resin sealing area along the longitudinal direction. Has,
一のメタル基材のアンテナ端子と、このメタル基材の長手方向に隣接するメタル基 材のアンテナ端子は、加工用素材の幅方向の共通の領域内に入っていることを特徴 とするメタル基材装置。  An antenna terminal of one metal base and an antenna terminal of a metal base adjacent to the metal base in a longitudinal direction are included in a common area in a width direction of the working material. Material equipment.
[2] 各メタル基材は、長手方向に沿う 2本の連結線に設けられた連結部により加工用素 材に連結され、  [2] Each metal base material is connected to the processing material by connecting portions provided at two connecting lines along the longitudinal direction,
この 2本の連結線に沿ってカットすることにより各メタル基材は加工用素材の他の部 分から分離されることを特徴とする請求項 1記載のメタル基材装置。  2. The metal base device according to claim 1, wherein each metal base is separated from another part of the processing material by cutting along the two connection lines.
[3] 各メタル基材は、ダイパッドおよび樹脂封止領域の外側であって、長手方向に沿う 両側に各々突出された二対のアンテナ端子を有することを特徴とする請求項 1記載 のメタル基材装置。 3. The metal substrate according to claim 1, wherein each metal base has two pairs of antenna terminals protruding on both sides along the longitudinal direction outside the die pad and the resin sealing region. Material equipment.
[4] 各メタル基材のダイパッドは、 ICチップより大形状となっており、かつダイパッドの IC チップ搭載領域は加工用素材をハーフエッチングすることにより加工用素材の厚み より薄く形成されていることを特徴とする請求項 1記載のメタル基材装置。  [4] The die pad of each metal base material is larger than the IC chip, and the IC chip mounting area of the die pad is formed to be thinner than the thickness of the processing material by half-etching the processing material The metal substrate device according to claim 1, wherein:
[5] 各メタル基材の樹脂封止領域に、樹脂との密着性を向上させるための凹部を設け たことを特徴とする請求項 1記載のメタル基材装置。 [5] The metal substrate device according to claim 1, wherein a concave portion is provided in a resin sealing region of each metal substrate to improve adhesion to a resin.
[6] 各メタル基材は、ダイパッドとアンテナ端子との間に設けられた内部端子を有するこ とを特徴とする請求項 1記載のメタル基材装置。 6. The metal base device according to claim 1, wherein each metal base has an internal terminal provided between the die pad and the antenna terminal.
[7] 加工用素材は Au材あるいは 42合金からなることを特徴とする請求項 1記載のメタ ル基材装置。 7. The metal base device according to claim 1, wherein the processing material is made of an Au material or a 42 alloy.
[8] 非接触 ICカードモジュール用の多数のメタル基材を有するメタル基材装置であつ て、長手方向に延びる帯状の加工用素材をエッチングすることにより長手方向に連 続して形成された多数のメタル基材を備え、各メタル基材は ICチップ搭載用のダイパ ッドと、ダイパッドを含む樹脂封止領域と、ダイパッドおよび樹脂封止領域の外側であ つて長手方向に沿う両側に各々突設された少なくとも一対のアンテナ端子とを有し、 一のメタル基材のアンテナ端子と、このメタル基材の長手方向に隣接するメタル基材 のアンテナ端子は、加工用素材の幅方向の共通の領域内に入っていることを特徴と するメタル基材装置を準備する工程と、 [8] Non-contact metal substrate equipment with multiple metal substrates for IC card modules And a large number of metal bases formed in the longitudinal direction by etching a strip-shaped processing material extending in the longitudinal direction. Each metal base is composed of a die pad for mounting an IC chip and a die pad. And at least one pair of antenna terminals protruding on both sides of the die pad and the resin sealing region along the longitudinal direction and outside the resin pad region. A step of preparing a metal base device characterized in that the antenna terminals of the metal base adjacent to the metal base in the longitudinal direction are within a common region in the width direction of the processing material;
各メタル基材のダイパッド上に ICチップを搭載する工程と、  Mounting the IC chip on the die pad of each metal base,
ICチップとメタル基材の所定部分とをワイヤを用いてワイヤボンディングにより接続 する工程と、  Connecting the IC chip and a predetermined portion of the metal substrate by wire bonding using a wire;
各メタル基材の樹脂封止領域に、 ICチップとワイヤを覆って樹脂を設けて樹脂封止 する工程と、  A step of providing a resin covering the IC chip and the wire in the resin sealing area of each metal base material and sealing the resin,
ICチップ毎に加工用素材をカットする工程と、を備えたことを特徴とする ICカードモ ジュールの製造方法。  A method of manufacturing an IC card module, comprising: a step of cutting a processing material for each IC chip.
[9] 加工用素材は Au材あるいは 42合金からなることを特徴とする請求項 8記載のメタ ル基材装置。  9. The metal base device according to claim 8, wherein the processing material is made of an Au material or a 42 alloy.
PCT/JP2004/008534 2003-06-17 2004-06-17 Metal base device and ic card module manufacturing method WO2004112133A1 (en)

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JPH01302757A (en) * 1988-05-30 1989-12-06 Ibiden Co Ltd Substrate assembly sheet
JPH0758273A (en) * 1993-08-16 1995-03-03 Sony Corp Lead frame and semiconductor device using same
JP2000174176A (en) * 1998-12-01 2000-06-23 Tokin Corp Lead frame for ic module, ic module using the same, and ic card

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JPH01302757A (en) * 1988-05-30 1989-12-06 Ibiden Co Ltd Substrate assembly sheet
JPH0758273A (en) * 1993-08-16 1995-03-03 Sony Corp Lead frame and semiconductor device using same
JP2000174176A (en) * 1998-12-01 2000-06-23 Tokin Corp Lead frame for ic module, ic module using the same, and ic card

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