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WO2004025369A3 - Method for lithographically structuring a substrate, and lacquer system - Google Patents

Method for lithographically structuring a substrate, and lacquer system Download PDF

Info

Publication number
WO2004025369A3
WO2004025369A3 PCT/DE2003/002880 DE0302880W WO2004025369A3 WO 2004025369 A3 WO2004025369 A3 WO 2004025369A3 DE 0302880 W DE0302880 W DE 0302880W WO 2004025369 A3 WO2004025369 A3 WO 2004025369A3
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
electron beam
lacquer system
lacquer
lithographically structuring
Prior art date
Application number
PCT/DE2003/002880
Other languages
German (de)
French (fr)
Other versions
WO2004025369A2 (en
Inventor
Klaus Elian
Joerg Schumann
Original Assignee
Infineon Technologies Ag
Klaus Elian
Joerg Schumann
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies Ag, Klaus Elian, Joerg Schumann filed Critical Infineon Technologies Ag
Priority to AU2003271518A priority Critical patent/AU2003271518A1/en
Publication of WO2004025369A2 publication Critical patent/WO2004025369A2/en
Publication of WO2004025369A3 publication Critical patent/WO2004025369A3/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/093—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antistatic means, e.g. for charge depletion
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/094—Multilayer resist systems, e.g. planarising layers

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Electron Beam Exposure (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)

Abstract

The invention relates to a method for lithographically structuring a substrate (10) by means of an electron beam, particularly for producing photomasks. Said method is characterized by the fact that first at least one electrically conductive, water-insoluble lower lacquer layer (1) is applied to the substrate (10), followed by at least one upper lacquer layer (2) made of electron beam-sensitive photoresist so as to create a lacquer system (1, 2). Such a lacquer system allows negative charges to discharge, whereby the electron beam is prevented from being deflected due to charging effects.
PCT/DE2003/002880 2002-09-04 2003-08-27 Method for lithographically structuring a substrate, and lacquer system WO2004025369A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU2003271518A AU2003271518A1 (en) 2002-09-04 2003-08-27 Method for lithographically structuring a substrate, and lacquer system

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10241620.6 2002-09-04
DE2002141620 DE10241620A1 (en) 2002-09-04 2002-09-04 Lithographic structurization of substrate with electron beam, used for making photo-mask, e.g. of chrome-on-glass type, uses system of electroconductive, water-insoluble lower resist layer and upper layer of electron beam resist

Publications (2)

Publication Number Publication Date
WO2004025369A2 WO2004025369A2 (en) 2004-03-25
WO2004025369A3 true WO2004025369A3 (en) 2004-07-15

Family

ID=31895715

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2003/002880 WO2004025369A2 (en) 2002-09-04 2003-08-27 Method for lithographically structuring a substrate, and lacquer system

Country Status (3)

Country Link
AU (1) AU2003271518A1 (en)
DE (1) DE10241620A1 (en)
WO (1) WO2004025369A2 (en)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63181428A (en) * 1987-01-23 1988-07-26 Matsushita Electronics Corp Formation of resist pattern
DE4100202A1 (en) * 1990-02-08 1991-08-14 Bayer Ag Poly:thiophene dispersion contg. polyanion
US5783363A (en) * 1992-05-28 1998-07-21 National Semiconductor Corporation Method of performing charged-particle lithography
WO2001020691A1 (en) * 1999-09-10 2001-03-22 Koninklijke Philips Electronics N.V. Conductive structure based on poly-3,4-alkenedioxythiophene (pedot) and polystyrenesulfonic acid (pss)
US20010019036A1 (en) * 2000-02-21 2001-09-06 Akifumi Kamijima Thin-film patterning method, manufacturing method of thin-film device and manufacturing method of thin-film magnetic head

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63181428A (en) * 1987-01-23 1988-07-26 Matsushita Electronics Corp Formation of resist pattern
DE4100202A1 (en) * 1990-02-08 1991-08-14 Bayer Ag Poly:thiophene dispersion contg. polyanion
US5783363A (en) * 1992-05-28 1998-07-21 National Semiconductor Corporation Method of performing charged-particle lithography
WO2001020691A1 (en) * 1999-09-10 2001-03-22 Koninklijke Philips Electronics N.V. Conductive structure based on poly-3,4-alkenedioxythiophene (pedot) and polystyrenesulfonic acid (pss)
US20010019036A1 (en) * 2000-02-21 2001-09-06 Akifumi Kamijima Thin-film patterning method, manufacturing method of thin-film device and manufacturing method of thin-film magnetic head

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
HUANG W-S: "SOLUBLE CONDUCTING POLYTHIOPHENES FOR CHARGE DISSIPATION IN ELECTRON BEAM LITHOGRAPHY", MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS, MATERIALS RESEARCH SOCIETY, PITTSBURG, PA, US, vol. 328, 3 November 1993 (1993-11-03), pages 245 - 256, XP008028650, ISSN: 0272-9172 *
PATENT ABSTRACTS OF JAPAN vol. 0124, no. 57 (E - 688) 30 November 1988 (1988-11-30) *
WU-SONG HUANG: "Synthesizing and processing conducting polythiophene derivatives for charge dissipation in electron-beam lithography", POLYMER (UK), POLYMER, SEPT. 1994, UK, vol. 35, no. 19, September 1994 (1994-09-01), pages 4057 - 4064, XP002275455, ISSN: 0032-3861 *

Also Published As

Publication number Publication date
DE10241620A1 (en) 2004-03-25
WO2004025369A2 (en) 2004-03-25
AU2003271518A1 (en) 2004-04-30
AU2003271518A8 (en) 2004-04-30

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