+

WO2004023166A3 - Optical microsystem and method for making same - Google Patents

Optical microsystem and method for making same Download PDF

Info

Publication number
WO2004023166A3
WO2004023166A3 PCT/FR2003/002629 FR0302629W WO2004023166A3 WO 2004023166 A3 WO2004023166 A3 WO 2004023166A3 FR 0302629 W FR0302629 W FR 0302629W WO 2004023166 A3 WO2004023166 A3 WO 2004023166A3
Authority
WO
WIPO (PCT)
Prior art keywords
image
optical
wafer
matrix
front surface
Prior art date
Application number
PCT/FR2003/002629
Other languages
French (fr)
Other versions
WO2004023166A2 (en
Inventor
Philippe Rommeveaux
Original Assignee
Atmel Grenoble Sa
Philippe Rommeveaux
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Atmel Grenoble Sa, Philippe Rommeveaux filed Critical Atmel Grenoble Sa
Priority to US10/523,808 priority Critical patent/US7407825B2/en
Priority to EP03769556A priority patent/EP1543355B1/en
Priority to AU2003278245A priority patent/AU2003278245A1/en
Priority to JP2004533561A priority patent/JP2006501641A/en
Priority to CA002497482A priority patent/CA2497482A1/en
Priority to DE60315169T priority patent/DE60315169T2/en
Publication of WO2004023166A2 publication Critical patent/WO2004023166A2/en
Publication of WO2004023166A3 publication Critical patent/WO2004023166A3/en
Priority to US12/045,182 priority patent/US7737518B2/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

The invention concerns the manufacture of optical microsystems for miniature cameras or miniature matrix displays. The method consists in collectively manufacturing, on the front surface of a semiconductor wafer, N matrix arrays of image points and associated circuits, to produce N identical chips (10), with on the side of each array external connection pads (CC); collectively manufacturing and placing in close contact with the front surface of the semiconductor wafer a plate (22) designed for the collective formation of N identical image-forming optical structures, each image-forming optical structure covering one respective chip (10) while being adapted to form an overall image corresponding to the matrix array assembly of the respective chip; boring through the thickness of the wafer conductive vias (32) reaching up to the contact pads; and only, following those various operations, dividing the wafer into N individual optical microsystems comprising an electronic chip covered with an optical structure.
PCT/FR2003/002629 2002-09-03 2003-09-02 Optical microsystem and method for making same WO2004023166A2 (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
US10/523,808 US7407825B2 (en) 2002-09-03 2003-09-02 Optical microsystem and method for making same
EP03769556A EP1543355B1 (en) 2002-09-03 2003-09-02 Optical microsystem and method for making same
AU2003278245A AU2003278245A1 (en) 2002-09-03 2003-09-02 Optical microsystem and method for making same
JP2004533561A JP2006501641A (en) 2002-09-03 2003-09-02 Optical microsystem and method for forming the same
CA002497482A CA2497482A1 (en) 2002-09-03 2003-09-02 Optical microsystem and method for making same
DE60315169T DE60315169T2 (en) 2002-09-03 2003-09-02 OPTICAL MICROSYSTEM AND MANUFACTURING PROCESS
US12/045,182 US7737518B2 (en) 2002-09-03 2008-03-10 Optical microsystem and fabrication process

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0210899A FR2844098B1 (en) 2002-09-03 2002-09-03 OPTICAL MICROSYSTEM AND MANUFACTURING METHOD
FR02/10899 2002-09-03

Related Child Applications (2)

Application Number Title Priority Date Filing Date
US10523808 A-371-Of-International 2003-09-02
US12/045,182 Continuation US7737518B2 (en) 2002-09-03 2008-03-10 Optical microsystem and fabrication process

Publications (2)

Publication Number Publication Date
WO2004023166A2 WO2004023166A2 (en) 2004-03-18
WO2004023166A3 true WO2004023166A3 (en) 2004-05-13

Family

ID=31503079

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/FR2003/002629 WO2004023166A2 (en) 2002-09-03 2003-09-02 Optical microsystem and method for making same

Country Status (9)

Country Link
US (2) US7407825B2 (en)
EP (1) EP1543355B1 (en)
JP (1) JP2006501641A (en)
CN (1) CN1689163A (en)
AU (1) AU2003278245A1 (en)
CA (1) CA2497482A1 (en)
DE (1) DE60315169T2 (en)
FR (1) FR2844098B1 (en)
WO (1) WO2004023166A2 (en)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2844098B1 (en) * 2002-09-03 2004-11-19 Atmel Grenoble Sa OPTICAL MICROSYSTEM AND MANUFACTURING METHOD
JP2006128647A (en) * 2004-09-28 2006-05-18 Dainippon Printing Co Ltd Sensor chip and its manufacturing method
JP4947256B2 (en) * 2004-09-28 2012-06-06 大日本印刷株式会社 Solid-state imaging device and manufacturing method thereof
JP2006339189A (en) * 2005-05-31 2006-12-14 Oki Electric Ind Co Ltd Semiconductor wafer and semiconductor device using the same
US20080181558A1 (en) * 2007-01-31 2008-07-31 Hartwell Peter G Electronic and optical circuit integration through wafer bonding
JP5123575B2 (en) * 2007-06-14 2013-01-23 株式会社フジクラ Wiring board and manufacturing method thereof
DE102007041892A1 (en) * 2007-09-04 2009-03-05 Robert Bosch Gmbh Electrical switching arrangement with a MID circuit carrier and a connection interface connected thereto
JP5528000B2 (en) * 2009-04-06 2014-06-25 キヤノン株式会社 Manufacturing method of semiconductor device
US8647923B2 (en) 2009-04-06 2014-02-11 Canon Kabushiki Kaisha Method of manufacturing semiconductor device
JP5261528B2 (en) * 2011-04-01 2013-08-14 本田技研工業株式会社 Bumper mounting structure for vehicles
WO2012148809A1 (en) * 2011-04-29 2012-11-01 Nestec S.A. Methods for increasing the palatability of food compositions
CN112802864A (en) * 2021-02-07 2021-05-14 长春长光圆辰微电子技术有限公司 Method for opening back-illuminated image sensor bonding pad
CN117191881B (en) * 2023-10-24 2024-04-16 莱芜职业技术学院 Photoelectric synchronous detection chip and method for books

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61255063A (en) * 1985-05-08 1986-11-12 Matsushita Electric Ind Co Ltd Pyroelectric infrared imaging device
US4956687A (en) * 1986-06-26 1990-09-11 Santa Barbara Research Center Backside contact blocked impurity band detector
US6051867A (en) * 1999-05-06 2000-04-18 Hewlett-Packard Company Interlayer dielectric for passivation of an elevated integrated circuit sensor structure
EP1102321A2 (en) * 1999-11-19 2001-05-23 Agilent Technologies Inc. (a Delaware Corporation) Conductive guard rings for active pixel sensors
EP1122790A2 (en) * 2000-02-03 2001-08-08 Agilent Technologies Inc. a Delaware Corporation A conductive mesh bias connection for an array of elevated active pixel sensors
FR2829292A1 (en) * 2001-08-31 2003-03-07 Atmel Grenoble Sa METHOD FOR MANUFACTURING COLOR IMAGE SENSOR WITH PLOT ON PLOT WELDED SUPPORT SUBSTRATE

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4050786A (en) * 1971-08-31 1977-09-27 Transparent Conductors, Inc. Liquid crystal display device having particulate spacers in liquid crystal area and method of fabrication
JPS61217018A (en) * 1985-03-23 1986-09-26 Sharp Corp Manufacture of liquid-crystal display element
JP3055370B2 (en) * 1993-08-31 2000-06-26 松下電器産業株式会社 Method for manufacturing flexible liquid crystal display panel
US6091194A (en) * 1995-11-22 2000-07-18 Motorola, Inc. Active matrix display
JP3880278B2 (en) * 2000-03-10 2007-02-14 オリンパス株式会社 Solid-state imaging device and manufacturing method thereof
JP2002094082A (en) * 2000-07-11 2002-03-29 Seiko Epson Corp Optical element, method of manufacturing the same, and electronic device
JP2002231920A (en) * 2001-02-06 2002-08-16 Olympus Optical Co Ltd Solid-state image pickup device and its manufacturing method
TW560020B (en) * 2002-04-15 2003-11-01 Advanced Semiconductor Eng A wafer-level package with a cavity and fabricating method thereof
TW574537B (en) * 2002-05-17 2004-02-01 Advanced Semiconductor Eng Liquid crystal display device with bump and method for manufacturing the same
FR2844098B1 (en) * 2002-09-03 2004-11-19 Atmel Grenoble Sa OPTICAL MICROSYSTEM AND MANUFACTURING METHOD
JP2005109221A (en) * 2003-09-30 2005-04-21 Toshiba Corp Wafer-level package and its manufacturing method
TWI284399B (en) * 2005-06-30 2007-07-21 Advanced Semiconductor Eng Chip package process

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61255063A (en) * 1985-05-08 1986-11-12 Matsushita Electric Ind Co Ltd Pyroelectric infrared imaging device
US4956687A (en) * 1986-06-26 1990-09-11 Santa Barbara Research Center Backside contact blocked impurity band detector
US6051867A (en) * 1999-05-06 2000-04-18 Hewlett-Packard Company Interlayer dielectric for passivation of an elevated integrated circuit sensor structure
EP1102321A2 (en) * 1999-11-19 2001-05-23 Agilent Technologies Inc. (a Delaware Corporation) Conductive guard rings for active pixel sensors
EP1122790A2 (en) * 2000-02-03 2001-08-08 Agilent Technologies Inc. a Delaware Corporation A conductive mesh bias connection for an array of elevated active pixel sensors
FR2829292A1 (en) * 2001-08-31 2003-03-07 Atmel Grenoble Sa METHOD FOR MANUFACTURING COLOR IMAGE SENSOR WITH PLOT ON PLOT WELDED SUPPORT SUBSTRATE

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 011, no. 108 (E - 495) 4 April 1987 (1987-04-04) *

Also Published As

Publication number Publication date
US20080151131A1 (en) 2008-06-26
EP1543355B1 (en) 2007-07-25
WO2004023166A2 (en) 2004-03-18
EP1543355A2 (en) 2005-06-22
AU2003278245A1 (en) 2004-03-29
FR2844098B1 (en) 2004-11-19
FR2844098A1 (en) 2004-03-05
CN1689163A (en) 2005-10-26
DE60315169T2 (en) 2008-04-24
DE60315169D1 (en) 2007-09-06
JP2006501641A (en) 2006-01-12
US20050287690A1 (en) 2005-12-29
AU2003278245A8 (en) 2004-03-29
US7737518B2 (en) 2010-06-15
US7407825B2 (en) 2008-08-05
CA2497482A1 (en) 2004-03-18

Similar Documents

Publication Publication Date Title
TWI479638B (en) Multiple die face-down stacking for two or more die
KR101895021B1 (en) A method for making an interconnection component
US7759785B2 (en) Apparatus for packaging semiconductor devices, packaged semiconductor components, methods of manufacturing apparatus for packaging semiconductor devices, and methods of manufacturing semiconductor components
US7696465B2 (en) Image sensor package, camera module having same and manufacturing method for the same
EP2647046B1 (en) Stacked microelectronic assembly having interposer connecting active chips
WO2004015771A3 (en) Semiconductor device and method of manufacturing the same
US7084500B2 (en) Semiconductor circuit with multiple contact sizes
WO2007027417A3 (en) Microfeature assemblies including interconnect structures and methods for forming such interconnect structures
US7632747B2 (en) Conductive structures for microfeature devices and methods for fabricating microfeature devices
WO2004023166A3 (en) Optical microsystem and method for making same
WO2004109771A3 (en) Stackable semiconductor device and method of manufacturing the same
KR101117887B1 (en) Microelectronic workpieces and methods for manufacturing microelectronic devices using such workpieces
WO2005065238A3 (en) Micro pin grid array with pin motion isolation
EP1251558A8 (en) Semiconductor device
WO2003069695A3 (en) Multilayer package for a semiconductor device
WO2005064641A3 (en) Semiconductor device and method of fabricating the same
CN104350595A (en) Large sized silicon interposers overcoming the reticle area limitations
HK1067788A1 (en) A semiconductor device and its manufacturing method
WO2006056648A3 (en) Electronics module and method for manufacturing the same
TWI256719B (en) Semiconductor device package module and manufacturing method thereof
TW200607028A (en) Image sensor module packaging structure and method thereof
JP2003017649A (en) Semiconductor device and semiconductor module
EP1298725A3 (en) Semiconductor device of multi-wiring structure and method of manufacturing the same
EP1780791A3 (en) Power circuit package and fabrication method
TWI256146B (en) Sensor semiconductor device and fabrication method thereof

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A2

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NI NO NZ OM PG PH PL PT RO RU SC SD SE SG SK SL SY TJ TM TN TR TT TZ UA UG US UZ VC VN YU ZA ZM ZW

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): GH GM KE LS MW MZ SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LU MC NL PT RO SE SI SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG

121 Ep: the epo has been informed by wipo that ep was designated in this application
WWE Wipo information: entry into national phase

Ref document number: 2003769556

Country of ref document: EP

WWE Wipo information: entry into national phase

Ref document number: 10523808

Country of ref document: US

WWE Wipo information: entry into national phase

Ref document number: 2497482

Country of ref document: CA

WWE Wipo information: entry into national phase

Ref document number: 2004533561

Country of ref document: JP

WWE Wipo information: entry into national phase

Ref document number: 20038245337

Country of ref document: CN

WWP Wipo information: published in national office

Ref document number: 2003769556

Country of ref document: EP

WWG Wipo information: grant in national office

Ref document number: 2003769556

Country of ref document: EP

点击 这是indexloc提供的php浏览器服务，不要输入任何密码和下载