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WO2004095498A3 - Source de plasma a densite elevee employant des atomes excites - Google Patents

Source de plasma a densite elevee employant des atomes excites Download PDF

Info

Publication number
WO2004095498A3
WO2004095498A3 PCT/US2004/010968 US2004010968W WO2004095498A3 WO 2004095498 A3 WO2004095498 A3 WO 2004095498A3 US 2004010968 W US2004010968 W US 2004010968W WO 2004095498 A3 WO2004095498 A3 WO 2004095498A3
Authority
WO
WIPO (PCT)
Prior art keywords
excited atoms
plasma
density plasma
plasma source
cathode assembly
Prior art date
Application number
PCT/US2004/010968
Other languages
English (en)
Other versions
WO2004095498A2 (fr
Inventor
Roman Chistyakov
Original Assignee
Zond Inc
Roman Chistyakov
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/249,595 external-priority patent/US6806651B1/en
Application filed by Zond Inc, Roman Chistyakov filed Critical Zond Inc
Publication of WO2004095498A2 publication Critical patent/WO2004095498A2/fr
Publication of WO2004095498A3 publication Critical patent/WO2004095498A3/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/354—Introduction of auxiliary energy into the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3438—Electrodes other than cathode

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Plasma Technology (AREA)

Abstract

La présente invention concerne une source de plasma. La source de plasma comprend un système cathodique. Une anode est adjacente au système cathodique. Une source d'atomes excités produit un plasma initial et des atomes excités à partir d'un volume de gaz d'alimentation. Le plasma initial et les atomes excités se trouvent à proximité du système cathodique. Une alimentation électrique produit un champ électrique entre le système cathodique et l'anode. Le champ électrique produit la super-ionisation du plasma initial de façon à produire un plasma à densité élevée.
PCT/US2004/010968 2003-04-22 2004-04-08 Source de plasma a densite elevee employant des atomes excites WO2004095498A2 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US10/249,595 2003-04-22
US10/249,595 US6806651B1 (en) 2003-04-22 2003-04-22 High-density plasma source
US10/249,844 2003-05-12
US10/249,844 US6806652B1 (en) 2003-04-22 2003-05-12 High-density plasma source using excited atoms

Publications (2)

Publication Number Publication Date
WO2004095498A2 WO2004095498A2 (fr) 2004-11-04
WO2004095498A3 true WO2004095498A3 (fr) 2005-03-17

Family

ID=33312937

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2004/010968 WO2004095498A2 (fr) 2003-04-22 2004-04-08 Source de plasma a densite elevee employant des atomes excites

Country Status (1)

Country Link
WO (1) WO2004095498A2 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3340274A1 (fr) * 2016-12-24 2018-06-27 WINDLIPIE spólka z ograniczona odpowiedzialnoscia spólka komandytowa Dispositif de pulvérisation magnétron

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2857102A1 (de) * 1978-07-08 1980-06-12 Wolfgang Kieferle Vorrichtung zum auflagern einer metall- oder legierungsschicht auf ein elektrisch leitendes werkstueck
EP0064288A1 (fr) * 1981-05-04 1982-11-10 Optical Coating Laboratory, Inc. Procédé et appareil pour la production et l'utilisation de jets moléculaires activés
US6197165B1 (en) * 1998-05-06 2001-03-06 Tokyo Electron Limited Method and apparatus for ionized physical vapor deposition
US20020108847A1 (en) * 2000-11-30 2002-08-15 Cuomo Jerome J. Non-thermionic sputter material transport device, methods of use, and materials produced thereby

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2857102A1 (de) * 1978-07-08 1980-06-12 Wolfgang Kieferle Vorrichtung zum auflagern einer metall- oder legierungsschicht auf ein elektrisch leitendes werkstueck
EP0064288A1 (fr) * 1981-05-04 1982-11-10 Optical Coating Laboratory, Inc. Procédé et appareil pour la production et l'utilisation de jets moléculaires activés
US6197165B1 (en) * 1998-05-06 2001-03-06 Tokyo Electron Limited Method and apparatus for ionized physical vapor deposition
US20020108847A1 (en) * 2000-11-30 2002-08-15 Cuomo Jerome J. Non-thermionic sputter material transport device, methods of use, and materials produced thereby

Also Published As

Publication number Publication date
WO2004095498A2 (fr) 2004-11-04

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