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WO2004075362A3 - Apparatus for and method of frequency conversion - Google Patents

Apparatus for and method of frequency conversion Download PDF

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Publication number
WO2004075362A3
WO2004075362A3 PCT/IL2004/000148 IL2004000148W WO2004075362A3 WO 2004075362 A3 WO2004075362 A3 WO 2004075362A3 IL 2004000148 W IL2004000148 W IL 2004000148W WO 2004075362 A3 WO2004075362 A3 WO 2004075362A3
Authority
WO
WIPO (PCT)
Prior art keywords
character
light
frequency
emitting
emitting device
Prior art date
Application number
PCT/IL2004/000148
Other languages
French (fr)
Other versions
WO2004075362A2 (en
Inventor
Nikolai Ledentsov
Vitaly Shchukin
Original Assignee
Pbc Lasers Ltd
Nikolai Ledentsov
Vitaly Shchukin
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/367,824 external-priority patent/US6928099B2/en
Application filed by Pbc Lasers Ltd, Nikolai Ledentsov, Vitaly Shchukin filed Critical Pbc Lasers Ltd
Priority to JP2006502641A priority Critical patent/JP2006518548A/en
Priority to EP04712143A priority patent/EP1595316A4/en
Publication of WO2004075362A2 publication Critical patent/WO2004075362A2/en
Publication of WO2004075362A3 publication Critical patent/WO2004075362A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14—External cavity lasers
    • H01S5/141—External cavity lasers using a wavelength selective device, e.g. a grating or etalon
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/106—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity
    • H01S3/108—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using non-linear optical devices, e.g. exhibiting Brillouin or Raman scattering
    • H01S3/109—Frequency multiplication, e.g. harmonic generation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/041—Optical pumping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1082—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region with a special facet structure, e.g. structured, non planar, oblique
    • H01S5/1085—Oblique facets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H01S5/2018—Optical confinement, e.g. absorbing-, reflecting- or waveguide-layers
    • H01S5/2027—Reflecting region or layer, parallel to the active layer, e.g. to modify propagation of the mode in the laser or to influence transverse modes

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Biophysics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
  • Lasers (AREA)

Abstract

Apparatus (Figure 3, Character 10) for frequency conversion of light, the apparatus comprises: a light-emitting device (Figure 3, Character 201) for emitting a light having a first frequency, the light-emitting device (Figure 3, Character 201) being an edge-emitting semiconductor light-emitting diode having an extended waveguide (Figure 3, Character 204) selected such that a fundamental transverse mode of the extended waveguide (Figure 3, Character 204) is characterized by a low beam divergence. The apparatus (Figure 3, Character 10) further comprises a light-reflector (Figure 3, Character 214), constructed and designed so that the light passes a plurality of times through an external cavity (Figure 3, Character 212), defined between the light-emitting device and the light-reflector, and provides a feedback for generating a laser light having the first frequency. The apparatus (Figure 3, Character 10) further comprises a non-linear optical crystal (Figure 3, Character 213), positioned in the external cavity (Figure 3, Character 212) and selected so that when the laser light having the first frequency passes a plurality of times through the non-linear optical crystal (Figure 3, Character 213), the first frequency is converted to a second frequency being different from the first frequency.
PCT/IL2004/000148 2003-02-19 2004-02-18 Apparatus for and method of frequency conversion WO2004075362A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2006502641A JP2006518548A (en) 2003-02-19 2004-02-18 Apparatus and method for frequency conversion
EP04712143A EP1595316A4 (en) 2003-02-19 2004-02-18 Apparatus for and method of frequency conversion

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/367,824 2003-02-19
US10/367,824 US6928099B2 (en) 2001-09-04 2003-02-19 Apparatus for and method of frequency conversion

Publications (2)

Publication Number Publication Date
WO2004075362A2 WO2004075362A2 (en) 2004-09-02
WO2004075362A3 true WO2004075362A3 (en) 2005-09-01

Family

ID=32907631

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/IL2004/000148 WO2004075362A2 (en) 2003-02-19 2004-02-18 Apparatus for and method of frequency conversion

Country Status (6)

Country Link
EP (1) EP1595316A4 (en)
JP (1) JP2006518548A (en)
KR (1) KR20050107439A (en)
CN (1) CN1778022A (en)
TW (1) TWI289220B (en)
WO (1) WO2004075362A2 (en)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100668329B1 (en) 2005-02-16 2007-01-12 삼성전자주식회사 Optically pumped semiconductor laser device with modulator
JP2007165562A (en) 2005-12-13 2007-06-28 Seiko Epson Corp Light source device and projector including light source device
US7660500B2 (en) * 2007-05-22 2010-02-09 Epicrystals Oy Light emitting array
KR100864696B1 (en) * 2008-03-03 2008-10-23 국방과학연구소 Spatial Light Modulation Laser Signal Generator
KR101053354B1 (en) * 2008-10-21 2011-08-01 김정수 Wavelength converting semiconductor laser using an external resonator
CN101867148B (en) * 2009-04-15 2012-05-23 中国科学院半导体研究所 FP (Fabry-Perot) cavity laser with reflecting surfaces of photonic crystals and vertical emergent surface
CN103682952A (en) * 2012-09-13 2014-03-26 福州高意通讯有限公司 Invisible laser with light output path mark and marking method of light output path
CN103427906B (en) * 2013-08-16 2016-08-10 北京邮电大学 A kind of system and method utilizing photon converter technique transmission multi-service signal
US9312662B1 (en) * 2014-09-30 2016-04-12 Lumentum Operations Llc Tunable laser source
CN113777857A (en) * 2021-08-25 2021-12-10 成都理工大学 A broadband frequency doubling method and system based on aluminum gallium arsenide
WO2024225458A1 (en) * 2023-04-28 2024-10-31 国立大学法人東京工業大学 Single photon source device

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5175741A (en) * 1989-06-07 1992-12-29 Fuji Photo Film Co., Ltd. Optical wavelength conversion method and laser-diode-pumped solid-state laser
US6097540A (en) * 1998-04-09 2000-08-01 Ceramoptec Industries Inc. Frequency conversion combiner system for diode lasers
US6241720B1 (en) * 1995-02-04 2001-06-05 Spectra Physics, Inc. Diode pumped, multi axial mode intracavity doubled laser
US6304585B1 (en) * 1996-05-17 2001-10-16 Sdl, Inc. Frequency conversion system

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4063189A (en) * 1976-04-08 1977-12-13 Xerox Corporation Leaky wave diode laser
US5321718A (en) * 1993-01-28 1994-06-14 Sdl, Inc. Frequency converted laser diode and lens system therefor
JPH08213686A (en) * 1994-11-14 1996-08-20 Mitsui Petrochem Ind Ltd Wavelength stabilized light source
RU2133534C1 (en) * 1997-08-08 1999-07-20 Государственное предприятие Научно-исследовательский институт "Полюс" Injection laser

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5175741A (en) * 1989-06-07 1992-12-29 Fuji Photo Film Co., Ltd. Optical wavelength conversion method and laser-diode-pumped solid-state laser
US6241720B1 (en) * 1995-02-04 2001-06-05 Spectra Physics, Inc. Diode pumped, multi axial mode intracavity doubled laser
US6304585B1 (en) * 1996-05-17 2001-10-16 Sdl, Inc. Frequency conversion system
US6097540A (en) * 1998-04-09 2000-08-01 Ceramoptec Industries Inc. Frequency conversion combiner system for diode lasers

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP1595316A4 *

Also Published As

Publication number Publication date
TWI289220B (en) 2007-11-01
TW200424729A (en) 2004-11-16
KR20050107439A (en) 2005-11-11
CN1778022A (en) 2006-05-24
EP1595316A4 (en) 2006-08-23
WO2004075362A2 (en) 2004-09-02
EP1595316A2 (en) 2005-11-16
JP2006518548A (en) 2006-08-10

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