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WO2004049413A1 - Dispositif permettant de deposer une pellicule mince sur une tranche - Google Patents

Dispositif permettant de deposer une pellicule mince sur une tranche Download PDF

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Publication number
WO2004049413A1
WO2004049413A1 PCT/KR2002/002207 KR0202207W WO2004049413A1 WO 2004049413 A1 WO2004049413 A1 WO 2004049413A1 KR 0202207 W KR0202207 W KR 0202207W WO 2004049413 A1 WO2004049413 A1 WO 2004049413A1
Authority
WO
WIPO (PCT)
Prior art keywords
wafer
diffusion
holes
supply line
gas supplied
Prior art date
Application number
PCT/KR2002/002207
Other languages
English (en)
Inventor
Young-Hoon Park
Jin-Pil Heo
Heung-Jik Lee
Sang-Kyu Lee
Hyun-Soo Kyung
Jang-Ho Bae
Original Assignee
Ips Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ips Ltd. filed Critical Ips Ltd.
Priority to PCT/KR2002/002207 priority Critical patent/WO2004049413A1/fr
Priority to AU2002368385A priority patent/AU2002368385A1/en
Publication of WO2004049413A1 publication Critical patent/WO2004049413A1/fr

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45574—Nozzles for more than one gas
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45572—Cooled nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment

Definitions

  • the present invention relates to an apparatus for depositing a thin film on a semiconductor wafer.
  • An apparatus for depositing a thin film on a wafer deposits thin films on the wafer by inputting a plurality of reactant gases into the apparatus.
  • the thin films having high purity and excellent electric characteristics should be deposited on the wafer.
  • the reactant gases input to the apparatus have to be evenly sprayed onto the wafer.
  • an apparatus for depositing a thin film on a wafer including a reactor block 1 10 in which a wafer w is located, a wafer block 120 installed in the reactor block 1 10 to mount the wafer w, a top plate 130 coupled to cover the reactor block 1 10, a first supply line 151 for transferring a first reactant gas and/or inert gas supplied to the wafer w, a second supply line 156 for a second reactant gas and/or the inert gas supplied to the wafer w, and a showerhead 140 installed to the top plate 130 while having a plurality of first and second spray holes 149a and 149b for spraying the gases supplied through the first and second supply lines 151 and 156 toward the wafer w, wherein the showerhead 140 includes first, second, and third diffusion plates 141 , 144, and 147, which are successively stacked, wherein the first diffusion plate 141 includes radiation-shaped passages 142 connected to the second
  • the upper surface of the second diffusion plate 144 is irregularly formed, and the second distribution holes 145a are formed on concave portions.
  • the upper surface of the third diffusion plate 147 is irregularly formed, and the first spray holes 149a are formed on concave portions and the second spray holes 149b are formed on convex portions.
  • the apparatus further comprises a first diffuser 163 having a plurality of symmetrically formed holes 163a to evenly mix the first reactant gas and/or the inert gas supplied through the first supply line 151 and spray the gas to the third diffusion region 148.
  • a first diffuser 163 having a plurality of symmetrically formed holes 163a to evenly mix the first reactant gas and/or the inert gas supplied through the first supply line 151 and spray the gas to the third diffusion region 148.
  • the apparatus further comprises a second diffuser 168 embedded in a diffusion chamber 167 to evenly mix the second reactant gas and/or the inert gas supplied through the second supply line 156 and supply the gas to the radiation-shaped passages 142, wherein holes 168a are symmetrically formed on the second diffuser 168.
  • refrigerant passages 133 through which a refrigerant flows, are formed in the top plate 130.
  • the refrigerant passages 133 include an inner refrigerant passage 133a formed on the central portion of the showerhead 140 and an outer refrigerant passage
  • FIG. 1 is a sectional view illustrating an apparatus for depositing a thin film on a wafer
  • FIGS. 2 and 3 are exploded perspective views illustrating a top plate and a showerhead of FIG. 1 , wherein FIG. 2 is a top view and FIG. 3 is a bottom view;
  • FIGS. 4 and 5 are perspective views illustrating a first diffusion plate of FIG. 1 , wherein FIG. 4 is a top view and FIG. 5 is a bottom view;
  • FIG. 6 and 7 are perspective views illustrating a second diffusion plate of FIG. 1 , wherein FIG. 6 is a top view and FIG. 7 is a bottom view;
  • FIGS. 8 and 9 are perspective views illustrating a third diffusion plate of FIG. 1 , wherein FIG. 8 is a top view and FIG. 9 is a bottom view;
  • FIG. 8 is a top view and FIG. 9 is a bottom view;
  • FIG. 10 is a perspective view illustrating a reactant gas introducer of FIG. 1 ;
  • FIGS. 11 and 12 are perspective views illustrating a second diffuser embedded in the reactant gas introducer of FIG. 10, wherein FIG. 11 is a top view and FIG. 12 is a bottom view; and
  • FIG. 13 is a plane view illustrating refrigerant passages formed in the top plate of FIG. 1.
  • FIG. 1 is a sectional view illustrating an apparatus for depositing a thin film on a wafer according to the present invention.
  • FIGS. 2 and 3 are exploded perspective views illustrating a top plate and a showerhead of FIG. 1 , wherein FIG. 2 is a top view and FIG. 3 is a bottom view.
  • the apparatus for depositing the thin film on the wafer includes a reactor block 110, a wafer block 120, a top plate 130, and an exhaustion unit (not shown).
  • a wafer w which is transferred through a wafer transfer hole 115, is located in the reactor block 110.
  • the wafer block 120 is installed in the reactor block 110, and the wafer w is mounted on the wafer block 120.
  • the top plate 130 is installed to cover the reactor block 110 to separate the reactor block 110 from the outside.
  • the exhaustion unit exhausts gases from the reactor block 110 to the outside.
  • First and second supply lines 151 and 156 for respectively transferring first and second reactant gases and/or inert gas supplied to the wafer w are assembled on the top of the top plate 130 by a reactant gas introducer 160.
  • a showerhead 140 for spraying the gases supplied from the first and second supply lines 151 and 156 toward the wafer w is installed on the bottom of the top plate 130.
  • the top plate 130 includes an installation hole 131 so that the showerhead 140 is installed at the bottom of the top plate 130 in the state of being installed in the installation hole 131.
  • circular refrigerant passages 133 are formed in the top plate 130 to cool the top plate 130 and the showerhead 140.
  • the number of refrigerant passages can be plural, for example, two in the present invention.
  • the amounts of refrigerants flowing through the refrigerant passages 133a and 133b are controlled to control the cooling degrees of the top plate 130 and the showerhead 140.
  • the refrigerant passages 133 can be divided into the inner refrigerant passage 133a and the outer refrigerant passage 133b.
  • the temperature of the showerhead 140 can be maintained uniform even if the temperature of the showerhead 140 at the center is higher than that the temperature at the edges due to the radiant heat generated in the wafer block 120.
  • the shower head 140 includes a plurality of first spray holes 149a and second spray holes 149b formed on a bottom in uniform intervals, as shown in FIG. 9.
  • transparent circles denote the first spray holes 149a and opaque circles denote the second spray holes 149b in order to clearly describe the present invention.
  • the gas supplied through the first supply line 151 is sprayed via the first spray holes 149a and the gas supplied through the second supply line 156 is sprayed via the second spray holes 149b.
  • the showerhead 140 is formed of first through third diffusion plates 141 , 144, and 147, which are successively stacked at the lower portion of the top plate 130.
  • FIGS. 4 and 5 are perspective views illustrating the first diffusion plate 141 of FIG. 1 , wherein FIG. 4 is a top view and FIG. 5 is a bottom view.
  • the first diffusion plate 141 includes the radiation-shaped passages 142 connected to the second supply line 156 and first distribution holes connected with the radiation-shaped passages 142.
  • the first distribution holes are divided into inner first distribution holes 142a formed at the central portion of the radiation-shaped passages 142 and outer first distribution holes 142b formed at the edge portions of the radiation-shape passages 142.
  • an installation pipe 143 is formed at the center of the first diffusion plate 141.
  • FIGS. 6 and 7 are perspective views illustrating the second diffusion plate 144 of FIG. 1 , wherein FIG. 6 is a top view and FIG. 7 is a bottom view.
  • the second diffusion plate 144 includes a second diffusion region 145 for evenly diffusing the gas supplied through the inner and outer first distribution holes 142a and 142b, and second distribution holes 145a, which are formed on the second diffusion region 145 in uniform intervals.
  • the second diffusion region 145 is formed due to irregularities on the upper surface of the second diffusion plate 144.
  • the second distribution holes 145a are formed on the concave portions in uniform intervals.
  • FIGS. 8 and 9 are perspective views illustrating the third diffusion plate 147 of FIG. 1 , wherein FIG. 8 is a top view and FIG. 9 is a bottom view.
  • the third diffusion plate 147 has a third diffusion region 148 for evenly diffusing the gas supplied through the first supply line 151.
  • the third diffusion region 148 is formed due to the irregularities on the upper surface of the third diffusion plate 147.
  • the first spray holes 149a are formed on the concave portions of the third diffusion plate 147 and the second spray holes 149b are formed on the convex portions.
  • the first through third diffusion plates 141 , 144, and 147 are stacked so that the gas supplied through the first supply line 151 is sprayed via the first spray holes 149a and the gas supplied through the second supply line 156 is sprayed via the second spray holes 149b.
  • FIG. 10 is a perspective view illustrating the reactant gas introducer 160 of FIG. 1.
  • FIGS. 1 1 and 12 are perspective views illustrating a second diffuser 168 embedded in the reactant gas introducer 160 of FIG. 10, wherein FIG. 1 1 is a top view and FIG. 12 is a bottom view. As shown in FIGS.
  • the reactant gas introducer 160 is attached to the top of the top plate 130 in the state of being closely inserted into the installation pipe 143 of the first diffusion plate 141 .
  • the reactant gas introducer 160 is formed of a gas introduction tube 161 , which is coupled to the inside of the installation pipe 143, and a diffusion chamber cap 166, which is attached to the top of the top plate 130.
  • O-rings are installed between the gas introduction tube 161 and the installation pipe 143, and between the diffusion chamber cap 166 and the top plate 130 to seal the gaps between the components.
  • a through hole 162 is formed in the gas introduction tube 161.
  • a ring-shaped diffusion chamber 167 is formed in the diffusion chamber cap 166.
  • the first supply line 151 is coupled to the gas introduction tube 161 .
  • a first diffuser 163 for evenly mixing the first reactant gas and/or the inert gas and spraying the gas is arranged at the end of the gas introduction tube 161.
  • a plurality of holes 163a are symmetrically formed on the first diffuser 163.
  • the holes 163a are formed at the central portion of the third diffusion region 148 on the third diffusion plate 2207
  • the second supply line 156 is coupled to the diffusion chamber cap 166.
  • a second diffuser 168 for evenly mixing the second reactant gas and/or the inert gas and supplying the gas to the radiation-shaped passages 142 via the plate distribution holes 132 is installed in the diffusion chamber 167, which is formed in the diffusion chamber cap 166.
  • a plurality of holes 168a are symmetrically formed on a ring-shaped member to form the second diffuser 168.
  • a large circular diffusion region is formed to efficiently diffuse the second reactant gas; however, such a structure cannot maintain a pertinent temperature of the showerhead by using the heat transfer efficiency of the showerhead when performing a chemical vapor deposition (CVD) or an atomic layer deposition (ALD) process at a high temperature.
  • CVD chemical vapor deposition
  • ALD atomic layer deposition
  • the irregularities on the first through third diffusion plates 141 , 144, and 147 efficiently conduct the radiant heat of the wafer block 120 toward the top plate 130. Accordingly, the showerhead 140 is prevented from being bent or corroded due to high temperature, and the reaction of the showerhead 140 with the process gas is minimized to minimize the generation of particles.
  • the refrigerant passages 133 formed in the top plate 130 also control the temperature of the showerhead 140.
  • a refrigerant such as water, oil, or air
  • flows through the refrigerant passages 133 Accordingly, the pertinent temperature of the first through third diffusion plates 141 , 144, and 147 of the showerhead 140 is maintained.
  • the reason for dividing the refrigerant passages 33 into the inner refrigerant passage 133a and the outer refrigerant passage 133b is described above.
  • the wafer w transferred through the wafer transfer hole 115 is mounted on the wafer block 120.
  • the first reactant gas and/or the inert gas is supplied to the third diffusion region 148 of the third diffusion plate 147 by passing the first supply line 151 , the through hole 162, the first diffuser 163, and the holes 163a.
  • the first reactant gas and/or the inert gas supplied to the third diffusion region 148 is sufficiently diffused on the third diffusion region 148 and sprayed to the wafer w via the first spray holes 149a.
  • the second reactant gas and/or the inert gas is supplied to the radiation-shaped passages 142 of the first diffusion plate 141 by passing the second supply line 156, the diffusion chamber 167 of the reactant gas introducer 160, the holes 168a of the second diffuser 168, and the plate distribution holes 132. Thereafter, the second reactant gas and/or the inert gas is supplied to the second diffusion region 145 of the second diffusion plate 144 via the first distribution holes 142a and 142b of the radiation-shaped passages 142 and diffused on the second diffusion region 145. The second reactant gas and/or the inert gas is sprayed to the wafer w via the second spray holes 149b after passing through the second distribution holes 145a.
  • the first and second reactant gases and/or the inert gas forms the thin film on the wafer w, and reactants and the gases not used in the process are transferred to the exhaustion unit via an exhaustion hole.
  • a thin film having high purity, excellent electric characteristics, and excellent step coverage can be efficiently deposited on a wafer using a plurality of reactant gases.
  • a CVD process and an ALD process can be performed at a high temperature.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

L'invention concerne un dispositif permettant de déposer une pellicule mince sur une tranche. Le dispositif décrit dans cette invention comprend un bloc réacteur (110) dans lequel est installée une tranche (w), un bloc tranche (120) installé dans le bloc réacteur (110) de manière à permettre le montage de la tranche (w), une plaque supérieure (130) couplée de manière à recouvrir le bloc réacteur (110), une première conduite d'alimentation (151) permettant de transférer un premier gaz réactif et/ou un premier gaz inerte destinés à la tranche (w), une seconde conduite d'alimentation (156) permettant de transférer un second gaz réactif et/ou un second gaz inerte destinés à la tranche (w), et une pomme de douche (140) installée sur la plaque supérieure (130), laquelle pomme de douche est dotée d'une multitude de premiers et seconds orifices de pulvérisation (149a, 149b) permettant la pulvérisation des gaz acheminés par les première et seconde conduites d'alimentation (151, 156) vers la tranche (w). La pomme de douche (140) comprend une première, une deuxième et une troisième plaques de diffusion (141, 144, 147), lesquelles sont successivement empilées. La première plaque de diffusion (141) comprend des passages (142) en forme de rayons raccordés à la seconde conduite d'alimentation (156) et des premiers orifices de distribution (142a, 142b) communiquant avec les passages (142). La deuxième plaque de diffusion (144) comprend une deuxième zone de diffusion (145) qui permet de diffuser uniformément les gaz acheminés à travers les premiers orifices de distribution (142a, 142b) et des seconds orifices de distribution (145a) formés dans la deuxième zone de diffusion (145) à intervalles réguliers. La troisième plaque de diffusion (147) comprend une troisième zone de diffusion (148) qui permet de diffuser uniformément les gaz acheminés à travers la première conduite d'alimentation (151), des premiers orifices de pulvérisation (149a) pour pulvériser les gaz acheminés à travers la troisième zone de diffusion (148), et des seconds orifices de distribution (149b) pour pulvériser les gaz acheminés à travers les seconds orifices de distribution (145a); les premiers et les seconds orifices de pulvérisation (149a, 149b) étant formés à des intervalles spécifiques.
PCT/KR2002/002207 2002-11-25 2002-11-25 Dispositif permettant de deposer une pellicule mince sur une tranche WO2004049413A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
PCT/KR2002/002207 WO2004049413A1 (fr) 2002-11-25 2002-11-25 Dispositif permettant de deposer une pellicule mince sur une tranche
AU2002368385A AU2002368385A1 (en) 2002-11-25 2002-11-25 Apparatus for depositing thin film on wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/KR2002/002207 WO2004049413A1 (fr) 2002-11-25 2002-11-25 Dispositif permettant de deposer une pellicule mince sur une tranche

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WO2004049413A1 true WO2004049413A1 (fr) 2004-06-10

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WO (1) WO2004049413A1 (fr)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101328579B (zh) * 2007-06-24 2010-11-03 应用材料股份有限公司 Hvpe喷头设计
CN102418086A (zh) * 2011-11-16 2012-04-18 上海卓锐材料科技有限公司 一种实现气体隔离和均匀化的喷淋头装置
US20150284847A1 (en) * 2014-04-08 2015-10-08 Samsung Electronics Co., Ltd. Method of Forming an Epitaxial Layer and Apparatus for Processing a Substrate Used for the Method
JP7179972B2 (ja) 2018-12-18 2022-11-29 北京北方華創微電子装備有限公司 チャンバ吸気構造及び反応チャンバ

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0591082A2 (fr) * 1992-09-30 1994-04-06 International Business Machines Corporation Appareillage et méthode de dépôt chimique en phase vapeur, directionnel et à pression réduite
JP2000141290A (ja) * 1998-11-06 2000-05-23 Gunze Ltd 長繊維束切断装置
KR20000054969A (ko) * 1999-02-02 2000-09-05 정수홍 2중 가스 플레이트를 구비한 건식 식각장비
KR20020056763A (ko) * 2000-12-29 2002-07-10 엘지전자 주식회사 호 시뮬레이터를 이용한 호 제어 프로세서의 부하 측정 방법

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0591082A2 (fr) * 1992-09-30 1994-04-06 International Business Machines Corporation Appareillage et méthode de dépôt chimique en phase vapeur, directionnel et à pression réduite
JP2000141290A (ja) * 1998-11-06 2000-05-23 Gunze Ltd 長繊維束切断装置
KR20000054969A (ko) * 1999-02-02 2000-09-05 정수홍 2중 가스 플레이트를 구비한 건식 식각장비
KR20020056763A (ko) * 2000-12-29 2002-07-10 엘지전자 주식회사 호 시뮬레이터를 이용한 호 제어 프로세서의 부하 측정 방법

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101328579B (zh) * 2007-06-24 2010-11-03 应用材料股份有限公司 Hvpe喷头设计
CN102418086A (zh) * 2011-11-16 2012-04-18 上海卓锐材料科技有限公司 一种实现气体隔离和均匀化的喷淋头装置
US20150284847A1 (en) * 2014-04-08 2015-10-08 Samsung Electronics Co., Ltd. Method of Forming an Epitaxial Layer and Apparatus for Processing a Substrate Used for the Method
JP7179972B2 (ja) 2018-12-18 2022-11-29 北京北方華創微電子装備有限公司 チャンバ吸気構造及び反応チャンバ

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